公开(公告)号：US20120220091A1

公开(公告)日：2012-08-30

申请号：US13418128

申请日：2012-03-12

申请人： Ashok Challa ,  Alan Elbanhawy ,  Thomas E. Grebs ,  Nathan L. Kraft ,  Dean E. Probst ,  Rodney S. Ridley ,  Steven P. Sapp ,  Qi Wang ,  Chongman Yun ,  J.G. Lee ,  Peter H. Wilson ,  Joseph A. Yedinak ,  J.Y. Jung ,  H.C. Jang ,  Babak S. Sani ,  Richard Stokes ,  Gary M. Dolny ,  John Mytych ,  Becky Losee ,  Adam Selsley ,  Robert Herrick ,  James J. Murphy ,  Gordon K. Madson ,  Bruce D. Marchant ,  Christopher L. Rexer ,  Christopher B. Kocon ,  Debra S. Woolsey

发明人： Ashok Challa ,  Alan Elbanhawy ,  Thomas E. Grebs ,  Nathan L. Kraft ,  Dean E. Probst ,  Rodney S. Ridley ,  Steven P. Sapp ,  Qi Wang ,  Chongman Yun ,  J.G. Lee ,  Peter H. Wilson ,  Joseph A. Yedinak ,  J.Y. Jung ,  H.C. Jang ,  Babak S. Sani ,  Richard Stokes ,  Gary M. Dolny ,  John Mytych ,  Becky Losee ,  Adam Selsley ,  Robert Herrick ,  James J. Murphy ,  Gordon K. Madson ,  Bruce D. Marchant ,  Christopher L. Rexer ,  Christopher B. Kocon ,  Debra S. Woolsey

IPC分类号： H01L21/336 ,  H01L21/311

CPC分类号： H01L29/407 ,  H01L21/26586 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/6835 ,  H01L23/4952 ,  H01L23/49816 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7805 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815 ,  H01L29/7828 ,  H01L29/7831 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H02M3/00 ,  H02M3/33592 ,  H02M7/48 ,  Y02B70/1475 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for forming thick oxide at the bottom of a trench formed in a semiconductor substrate includes forming a conformal oxide film by a sub-atmospheric chemical vapor deposition process that fills the trench and covers a top surface of the substrate. The method also includes etching the oxide film off the top surface of the substrate and inside the trench to leave a substantially flat layer of oxide having a target thickness at the bottom of the trench.

摘要翻译： 在半导体衬底中形成的沟槽的底部形成厚氧化物的方法包括通过填充沟槽并覆盖衬底顶表面的亚大气压化学气相沉积工艺形成共形氧化膜。 该方法还包括将氧化膜从衬底的顶表面和沟槽内部蚀刻，以留下在沟槽底部具有目标厚度的基本平坦的氧化物层。

公开(公告)号：US20080135931A1

公开(公告)日：2008-06-12

申请号：US12032123

申请日：2008-02-15

申请人： Ashok Challa ,  Alan Elbanhawy ,  Thomas E. Grebs ,  Nathan L. Kraft ,  Dean E. Probst ,  Rodney S. Ridlay ,  Steven P. Sapp ,  Qi Wang ,  Chongman Yun ,  J.G. Lee ,  Peter H. Wilson ,  Joseph A. Yedinak ,  J.Y. Jung ,  H.C. Jang ,  Babak S. Sanl ,  Richard Stokes ,  Gary M. Dolny ,  John Mytych ,  Becky Losee ,  Adam Selsley ,  Robert Herrick ,  James J. Murphy ,  Gordon K. Madson ,  Bruce D. Marchant ,  Christopher L. Rexer ,  Christopher B. Kocon ,  Debra S. Woolsey

发明人： Ashok Challa ,  Alan Elbanhawy ,  Thomas E. Grebs ,  Nathan L. Kraft ,  Dean E. Probst ,  Rodney S. Ridlay ,  Steven P. Sapp ,  Qi Wang ,  Chongman Yun ,  J.G. Lee ,  Peter H. Wilson ,  Joseph A. Yedinak ,  J.Y. Jung ,  H.C. Jang ,  Babak S. Sanl ,  Richard Stokes ,  Gary M. Dolny ,  John Mytych ,  Becky Losee ,  Adam Selsley ,  Robert Herrick ,  James J. Murphy ,  Gordon K. Madson ,  Bruce D. Marchant ,  Christopher L. Rexer ,  Christopher B. Kocon ,  Debra S. Woolsey

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/407 ,  H01L21/26586 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/6835 ,  H01L23/4952 ,  H01L23/49816 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7805 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815 ,  H01L29/7828 ,  H01L29/7831 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H02M3/00 ,  H02M3/33592 ,  H02M7/48 ,  Y02B70/1475 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region, source regions having the first conductivity type formed in the well region adjacent the active trench, and a first termination trench extending below the well region and disposed at an outer edge of an active region of the device. The sidewalls and bottom of the active trench are lined with dielectric material, and substantially filled with a first conductive layer forming an upper electrode and a second conductive layer forming a lower electrode, the upper electrode being disposed above the lower electrode and separated therefrom by inter-electrode dielectric material. The first termination trench can be lined with a layer of dielectric material that is thicker than the dielectric material lining the sidewalls of the active trench, and is substantially filled with conductive material.

摘要翻译： 半导体功率器件包括第一导电类型的漂移区域，在漂移区域上方延伸并且具有与第一导电类型相反的第二导电类型的阱区域，延伸穿过阱区域并进入漂移区域的有源沟槽，源极区域 具有形成在邻近有源沟槽的阱区中的第一导电类型，以及在阱区下延伸并设置在器件的有源区的外边缘处的第一端接沟槽。 有源沟槽的侧壁和底部衬有介电材料，并且基本上填充有形成上电极的第一导电层和形成下电极的第二导电层，上电极设置在下电极之上， 电介质材料。 第一端接沟槽可以衬有一层电介质材料，其比在有源沟槽侧壁上的电介质材料更厚，并且基本上填充有导电材料。

公开(公告)号：US20080150020A1

公开(公告)日：2008-06-26

申请号：US12018166

申请日：2008-01-22

申请人： Ashok Challa ,  Alan Elbanhawy ,  Thomas E. Grebs ,  Nathan L. Kraft ,  Dean E. Probst ,  Rodney S. Ridley ,  Steven P. Sapp ,  Qi Wang ,  Chongman Yun ,  J. G. Lee ,  Peter H. Wilson ,  Joseph A. Yedinak ,  J. Y. Jung ,  H. C. Jang ,  Babak S. Sani ,  Richard Stokes ,  Gary M. Dolny ,  John Mytych ,  Becky Losee ,  Adam Selsley ,  Robert Herrick ,  James J. Murphy ,  Gordon K. Madson ,  Bruce D. Marchant ,  Christopher L. Rexer ,  Christopher B. Kocon ,  Debra S. Woolsey

发明人： Ashok Challa ,  Alan Elbanhawy ,  Thomas E. Grebs ,  Nathan L. Kraft ,  Dean E. Probst ,  Rodney S. Ridley ,  Steven P. Sapp ,  Qi Wang ,  Chongman Yun ,  J. G. Lee ,  Peter H. Wilson ,  Joseph A. Yedinak ,  J. Y. Jung ,  H. C. Jang ,  Babak S. Sani ,  Richard Stokes ,  Gary M. Dolny ,  John Mytych ,  Becky Losee ,  Adam Selsley ,  Robert Herrick ,  James J. Murphy ,  Gordon K. Madson ,  Bruce D. Marchant ,  Christopher L. Rexer ,  Christopher B. Kocon ,  Debra S. Woolsey

IPC分类号： H01L29/78

CPC分类号： H01L29/407 ,  H01L21/26586 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/6835 ,  H01L23/4952 ,  H01L23/49816 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7805 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815 ,  H01L29/7828 ,  H01L29/7831 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H02M3/00 ,  H02M3/33592 ,  H02M7/48 ,  Y02B70/1475 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region. The active trench, which includes sidewalls and bottom lined with dielectric material, is substantially filled with a first conductive layer and a second conductive layer. The second conductive layer forms a gate electrode and is disposed above the first conductive layer and is separated from the first conductive layer by an inter-electrode dielectric material. The device also includes source regions having the first conductivity type formed inside the well region and adjacent the active trench and a charge control trench that extends deeper into the drift region than the active trench and is substantially filled with material to allow for vertical charge control in the drift region. The charge control trench can be lined with a layer of dielectric material and substantially filled with conductive material. The active trench can include a second shield electrode made of conductive material disposed below the first shield electrode. The first conductive layer inside the active trench can form a secondary gate electrode that is configured to be electrically biased to a desired potential. The semiconductor device can also include a Schottky structure formed between the charge control trench and a second adjacent charge control trench.

摘要翻译： 半导体功率器件包括第一导电类型的漂移区域，在漂移区域上方延伸并且具有与第一导电类型相反的第二导电类型的阱区域，延伸穿过阱区域并进入漂移区域的有源沟槽。 主要沟槽包括侧壁和衬底与介电材料的底部，其基本上被第一导电层和第二导电层填充。 第二导电层形成栅极，并且设置在第一导电层的上方，并且通过电极间电介质材料与第一导电层分离。 该器件还包括形成在阱区内并且邻近有源沟槽的第一导电类型的源极区域以及充电控制沟槽，该电荷控制沟槽比有源沟槽更深地延伸到漂移区域中，并且基本上填充有材料以允许垂直电荷控制 漂移区域。 电荷控制沟槽可以衬有介电材料层并且基本上填充有导电材料。 有源沟槽可以包括由设置在第一屏蔽电极下方的导电材料制成的第二屏蔽电极。 有源沟槽内的第一导电层可以形成辅助栅电极，其被配置为电偏置到期望的电位。 半导体器件还可以包括形成在电荷控制沟槽和第二相邻电荷控制沟槽之间的肖特基结构。

公开(公告)号：US20080138953A1

公开(公告)日：2008-06-12

申请号：US12032599

申请日：2008-02-15

申请人： Ashok Challa ,  Alan Elbanhawy ,  Dean E. Probst ,  Steven P. Sapp ,  Peter H. Wilson ,  Babak S. Sani ,  Becky Losee ,  Robert Herrick ,  James J. Murphy ,  Gordon K. Madson ,  Bruce D. Marchant ,  Christopher B. Kocon ,  Debra S. Woolsey

发明人： Ashok Challa ,  Alan Elbanhawy ,  Dean E. Probst ,  Steven P. Sapp ,  Peter H. Wilson ,  Babak S. Sani ,  Becky Losee ,  Robert Herrick ,  James J. Murphy ,  Gordon K. Madson ,  Bruce D. Marchant ,  Christopher B. Kocon ,  Debra S. Woolsey

IPC分类号： H01L21/336 ,  H01L21/762

CPC分类号： H01L29/407 ,  H01L21/26586 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/6835 ,  H01L23/4952 ,  H01L23/49816 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7805 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815 ,  H01L29/7828 ,  H01L29/7831 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H02M3/00 ,  H02M3/33592 ,  H02M7/48 ,  Y02B70/1475 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for forming thick oxide at the bottom of a trench formed in a semiconductor substrate includes forming a conformal oxide film that fills the trench and covers a top surface of the substrate. and etching the oxide film off the top surface of the substrate and inside the trench to leave a substantially flat layer of oxide having a target thickness at the bottom of the trench. The oxide film can be deposited by sub-atmospheric chemical vapor deposition processes, directional Tetraethoxysilate (TEOS) processes, or high density plasma deposition processes that form a thicker oxide at the bottom of the trench than on the sidewalls of the trench.

摘要翻译： 在半导体衬底中形成的沟槽的底部形成厚氧化物的方法包括形成填充沟槽并覆盖衬底的顶表面的共形氧化物膜。 并且将氧化膜从衬底的顶表面和沟槽内部蚀刻，以留下在沟槽底部具有目标厚度的基本平坦的氧化物层。 氧化膜可以通过亚大气压化学气相沉积工艺，定向四乙氧基硅油（TEOS）工艺或高密度等离子体沉积工艺进行沉积，其在沟槽底部形成比在沟槽的侧壁上更厚的氧化物。

公开(公告)号：US08936985B2

公开(公告)日：2015-01-20

申请号：US13418128

申请日：2012-03-12

申请人： Ashok Challa ,  Alan Elbanhawy ,  Dean E. Probst ,  Steven P. Sapp ,  Peter H. Wilson ,  Babak S. Sani ,  Becky Losee ,  Robert Herrick ,  James J. Murphy ,  Gordon K. Madson ,  Bruce D. Marchant ,  Christopher B. Kocon ,  Debra S. Woolsey

发明人： Ashok Challa ,  Alan Elbanhawy ,  Dean E. Probst ,  Steven P. Sapp ,  Peter H. Wilson ,  Babak S. Sani ,  Becky Losee ,  Robert Herrick ,  James J. Murphy ,  Gordon K. Madson ,  Bruce D. Marchant ,  Christopher B. Kocon ,  Debra S. Woolsey

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L21/683 ,  H01L21/311 ,  H01L29/40 ,  H01L29/06 ,  H01L21/3065 ,  H01L29/739 ,  H02M3/335 ,  H02M3/00 ,  H01L29/10 ,  H02M7/48 ,  H01L29/49 ,  H01L29/423 ,  H01L29/165 ,  H01L23/495 ,  H01L21/265 ,  H01L29/417 ,  H01L23/498

CPC分类号： H01L29/407 ,  H01L21/26586 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/6835 ,  H01L23/4952 ,  H01L23/49816 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7805 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815 ,  H01L29/7828 ,  H01L29/7831 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H02M3/00 ,  H02M3/33592 ,  H02M7/48 ,  Y02B70/1475 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method can include forming a drift region, forming a well region above the drift region, and forming an active trench extending through the well region and into the drift region. The method can include forming a first source region in contact with a first sidewall of the active trench and a second source region in contact with a second sidewall of the active trench. The method also includes forming a charge control trench where the charge control trench is aligned parallel to the active trench and laterally separated from the active trench by a mesa region, and where the portion of the well region is in contact with the charge control trench and excludes any source region. The method also includes forming an oxide along a bottom of the active trench having a thickness greater than a thickness of an oxide along the first sidewall of the active trench.

摘要翻译： 一种方法可以包括形成漂移区，在漂移区上形成阱区，以及形成延伸穿过阱区并进入漂移区的有源沟槽。 该方法可以包括形成与有源沟槽的第一侧壁接触的第一源极区域和与有源沟槽的第二侧壁接触的第二源极区域。 该方法还包括形成电荷控制沟槽，其中电荷控制沟槽平行于有源沟槽对齐并且通过台面区域与有源沟槽横向分离，并且其中阱区域的部分与电荷控制沟槽接触， 排除任何来源地区。 该方法还包括沿有源沟槽的底部沿着有源沟槽的第一侧壁形成厚度大于氧化物厚度的氧化物。

公开(公告)号：US08143124B2

公开(公告)日：2012-03-27

申请号：US12032599

申请日：2008-02-15

申请人： Ashok Challa ,  Alan Elbanhawy ,  Dean E. Probst ,  Steven P. Sapp ,  Peter H. Wilson ,  Babak S. Sani ,  Becky Losee ,  Robert Herrick ,  James J. Murphy ,  Gordon K. Madson ,  Bruce D. Marchant ,  Christopher B. Kocon ,  Debra S. Woolsey

发明人： Ashok Challa ,  Alan Elbanhawy ,  Dean E. Probst ,  Steven P. Sapp ,  Peter H. Wilson ,  Babak S. Sani ,  Becky Losee ,  Robert Herrick ,  James J. Murphy ,  Gordon K. Madson ,  Bruce D. Marchant ,  Christopher B. Kocon ,  Debra S. Woolsey

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/407 ,  H01L21/26586 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/6835 ,  H01L23/4952 ,  H01L23/49816 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7805 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815 ,  H01L29/7828 ,  H01L29/7831 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H02M3/00 ,  H02M3/33592 ,  H02M7/48 ,  Y02B70/1475 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method of manufacturing a semiconductor device having a charge control trench and an active control trench with a thick oxide bottom includes forming a drift region, a well region extending above the drift region, an active trench extending through the well region and into the drift region, a charge control trench extending deeper into the drift region than the active trench, an oxide film that fills the active trench, the charge control trench and covers a top surface of the substrate, an electrode in the active trench, and source regions. The method also includes etching the oxide film off the top surface of the substrate and inside the active trench to leave a substantially flat layer of thick oxide having a target thickness at the bottom of the active trench.

摘要翻译： 制造具有电荷控制沟槽和具有厚氧化物底部的有源控制沟槽的半导体器件的方法包括形成漂移区，在漂移区上延伸的阱区，延伸穿过阱区并进入漂移区的有源沟槽 ，比有源沟槽更深地延伸到漂移区域中的电荷控制沟槽，填充有源沟槽，电荷控制沟槽并覆盖衬底的顶表面的氧化物膜，有源沟槽中的电极和源极区域。 该方法还包括将氧化膜从衬底的顶表面和有源沟槽内部蚀刻，以留下在有源沟槽的底部具有目标厚度的基本平坦的厚氧化物层。

公开(公告)号：US08143123B2

公开(公告)日：2012-03-27

申请号：US12041546

申请日：2008-03-03

申请人： Thomas E. Grebs ,  Rodney S. Ridley ,  Steven P. Sapp ,  Peter H. Wilson ,  Babak S. Sani ,  Gary M. Dolny ,  John Mytych ,  Becky Losee ,  Adam Selsley ,  Christopher B. Kocon

发明人： Thomas E. Grebs ,  Rodney S. Ridley ,  Steven P. Sapp ,  Peter H. Wilson ,  Babak S. Sani ,  Gary M. Dolny ,  John Mytych ,  Becky Losee ,  Adam Selsley ,  Christopher B. Kocon

IPC分类号： H01L21/336

CPC分类号： H01L29/407 ,  H01L21/26586 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/6835 ,  H01L23/4952 ,  H01L23/49816 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7805 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815 ,  H01L29/7828 ,  H01L29/7831 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H02M3/00 ,  H02M3/33592 ,  H02M7/48 ,  Y02B70/1475 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for forming power semiconductor devices having an inter-electrode dielectric (IPD) layer inside a trench includes providing a semiconductor substrate with a trench, lining the sidewalls and bottom of the trench with a first layer of dielectric material, filling the trench with a first layer of conductive material to form a first electrode, recessing the first layer of dielectric material and the first layer of conductive material to a first depth inside the trench, forming a layer of polysilicon material on a top surface of the dielectric material and conductive material inside the trench, oxidizing the layer of polysilicon material, and forming a second electrode inside the trench atop the oxidized layer and isolated from trench sidewalls by a second dielectric layer. The oxidation step can be enhanced by either chemically or physically altering the top portion polysilicon such as by implanting impurities.

摘要翻译： 一种用于形成在沟槽内具有电极间电介质（IPD）层的功率半导体器件的方法，包括：提供具有沟槽的半导体衬底，用第一层介电材料衬套沟槽的侧壁和底部， 第一层导电材料以形成第一电极，将第一层介电材料和第一导电材料层凹入沟槽内的第一深度，在介电材料的顶表面上形成多晶硅材料层和导电材料 在沟槽内部氧化多晶硅材料层，以及在氧化层顶部的沟槽内部形成第二电极，并通过第二介电层与沟槽侧壁隔离。 通过化学或物理地改变顶部多晶硅，例如通过注入杂质，可以增强氧化步骤。

公开(公告)号：US20080199997A1

公开(公告)日：2008-08-21

申请号：US12041546

申请日：2008-03-03

申请人： Thomas E. Grebs ,  Rodney S. Ridley ,  Steven P. Sapp ,  Peter H. Wilson ,  Babak S. Sani ,  Gary M. Dolny ,  John Mytych ,  Becky Losee ,  Adam Selsley ,  Christopher B. Kocon

发明人： Thomas E. Grebs ,  Rodney S. Ridley ,  Steven P. Sapp ,  Peter H. Wilson ,  Babak S. Sani ,  Gary M. Dolny ,  John Mytych ,  Becky Losee ,  Adam Selsley ,  Christopher B. Kocon

IPC分类号： H01L21/336 ,  H01L21/28

CPC分类号： H01L29/407 ,  H01L21/26586 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/6835 ,  H01L23/4952 ,  H01L23/49816 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7805 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815 ,  H01L29/7828 ,  H01L29/7831 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H02M3/00 ,  H02M3/33592 ,  H02M7/48 ,  Y02B70/1475 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for forming power semiconductor devices having an inter-electrode dielectric (IPD) layer inside a trench includes providing a semiconductor substrate with a trench, lining the sidewalls and bottom of the trench with a first layer of dielectric material, filling the trench with a first layer of conductive material to form a first electrode, recessing the first layer of dielectric material and the first layer of conductive material to a first depth inside the trench, forming a layer of polysilicon material on a top surface of the dielectric material and conductive material inside the trench, oxidizing the layer of polysilicon material, and forming a second electrode inside the trench atop the oxidized layer and isolated from trench sidewalls by a second dielectric layer. The oxidation step can be enhanced by either chemically or physically altering the top portion polysilicon such as by implanting impurities.

摘要翻译： 一种用于形成在沟槽内具有电极间电介质（IPD）层的功率半导体器件的方法，包括：提供具有沟槽的半导体衬底，用第一层介电材料衬套沟槽的侧壁和底部， 第一层导电材料以形成第一电极，将第一层介电材料和第一导电材料层凹入沟槽内的第一深度，在介电材料的顶表面上形成多晶硅材料层和导电材料 在沟槽内部氧化多晶硅材料层，以及在氧化层顶部的沟槽内部形成第二电极，并通过第二介电层与沟槽侧壁隔离。 通过化学或物理地改变顶部多晶硅，例如通过注入杂质，可以增强氧化步骤。

公开(公告)号：US07416948B2

公开(公告)日：2008-08-26

申请号：US11551992

申请日：2006-10-23

申请人： Nathan L. Kraft ,  Ashok Challa ,  Steven P. Sapp ,  Hamza Yilmaz ,  Daniel Calafut ,  Dean E. Probst ,  Rodney S. Ridley ,  Thomas E. Grebs ,  Christopher B. Kocon ,  Joseph A. Yedinak ,  Gary M. Dolny

发明人： Nathan L. Kraft ,  Ashok Challa ,  Steven P. Sapp ,  Hamza Yilmaz ,  Daniel Calafut ,  Dean E. Probst ,  Rodney S. Ridley ,  Thomas E. Grebs ,  Christopher B. Kocon ,  Joseph A. Yedinak ,  Gary M. Dolny

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

摘要： A field effect transistor is formed as follows. Trenches are formed in a semiconductor region of a first conductivity type. Each trench is partially filled with one or more materials. A dual-pass angled implant is carried out to implant dopants of a second conductivity type into the semiconductor region through an upper surface of the semiconductor region and through upper trench sidewalls not covered by the one or more material. A high temperature process is carried out to drive the implanted dopants deeper into the mesa region thereby forming body regions of the second conductivity type between adjacent trenches. Source regions of the first conductivity type are then formed in each body region.

摘要翻译： 场效应晶体管如下形成。 沟槽形成在第一导电类型的半导体区域中。 每个沟槽部分地填充有一种或多种材料。 执行双通角度注入以通过半导体区域的上表面和不被一种或多种材料覆盖的上沟槽侧壁将第二导电类型的掺杂剂注入半导体区域。 进行高温处理以将注入的掺杂剂更深地驱动到台面区域中，从而在相邻的沟槽之间形成第二导电类型的体区。 然后在每个身体区域中形成第一导电类型的源区域。

公开(公告)号：US07923776B2

公开(公告)日：2011-04-12

申请号：US12698746

申请日：2010-02-02

申请人： Hamza Yilmaz ,  Daniel Calafut ,  Christopher Boguslaw Kocon ,  Steven P. Sapp ,  Dean E. Probst ,  Nathan L. Kraft ,  Thomas E. Grebs ,  Rodney S. Ridley ,  Gary M. Dolny ,  Bruce D. Marchant ,  Joseph A. Yedinak

发明人： Hamza Yilmaz ,  Daniel Calafut ,  Christopher Boguslaw Kocon ,  Steven P. Sapp ,  Dean E. Probst ,  Nathan L. Kraft ,  Thomas E. Grebs ,  Rodney S. Ridley ,  Gary M. Dolny ,  Bruce D. Marchant ,  Joseph A. Yedinak

IPC分类号： H01L29/772

CPC分类号： H01L29/7827 ,  H01L21/26586 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66666 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872

摘要： A field effect transistor includes a body region of a first conductivity type in a semiconductor region of a second conductivity type. A gate trench extends through the body region and terminating within the semiconductor region. A source region of the second conductivity type extends in the body region adjacent the gate trench. The source region and an interface between the body region and the semiconductor region define a channel region therebetween which extends along the gate trench sidewall. A channel enhancement region of the second conductivity type is formed adjacent the gate trench. The channel enhancement region partially extends into a lower portion of the channel region to thereby reduce a resistance of the channel region.

摘要翻译： 场效应晶体管包括在第二导电类型的半导体区域中的第一导电类型的体区。 栅极沟槽延伸穿过身体区域并终止在半导体区域内。 第二导电类型的源极区域在与栅极沟槽相邻的体区中延伸。 源极区域和主体区域和半导体区域之间的界面限定其间沿着栅极沟槽侧壁延伸的沟道区域。 第二导电类型的沟道增强区域形成在栅极沟槽附近。 沟道增强区域部分地延伸到沟道区的下部，从而减小沟道区的电阻。