公开(公告)号：US6053980A

公开(公告)日：2000-04-25

申请号：US923110

申请日：1997-09-04

申请人： Atsuhiko Suda ,  Kazuyuki Toyoda ,  Issei Makiguchi ,  Makoto Ozawa

发明人： Atsuhiko Suda ,  Kazuyuki Toyoda ,  Issei Makiguchi ,  Makoto Ozawa

IPC分类号： B65G49/07 ,  H01L21/02 ,  H01L21/677 ,  H01L21/687 ,  B25J21/00 ,  H01L21/205 ,  H01L21/302

CPC分类号： H01L21/68707 ,  H01L21/67745 ,  Y10S414/135 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/141

摘要： A substrate processing apparatus comprises a substrate transfer section, connection modules attached to the substrate transfer section, and a first substrate transfer robot in the substrate transfer section capable of transferring substrates to the connection modules. The connection module comprises a substrate processing chamber, first and second intermediate chambers between the substrate processing chamber and the substrate transfer section. The second intermediate chamber is provided with a first substrate holder, the substrate processing chamber is provided with a second substrate holder, and the first intermediate chamber is provided with a substrate transfer device capable of mounting a plurality of the substrates held being stacked in the vertical direction by the first substrate holder, onto the second substrate holder such that the substrates are arranged side by side in the horizontal direction.

摘要翻译： 基板处理装置包括基板转印部，连接到基板转印部的连接模块和能够将基板传送到连接模块的基板转印部中的第一基板输送机器人。 连接模块包括衬底处理室，衬底处理室和衬底传送部分之间的第一和第二中间室。 第二中间室设置有第一衬底保持器，衬底处理室设置有第二衬底保持器，并且第一中间室设置有衬底传送装置，其能够将保持堆叠的多个衬底安装在垂直方向上 方向由第一基板保持器延伸到第二基板保持器上，使得基板在水平方向上并排设置。

公开(公告)号：US20060090849A1

公开(公告)日：2006-05-04

申请号：US11293257

申请日：2005-12-05

申请人： Kazuyuki Toyoda ,  Atsuhiko Suda ,  Issei Makiguchi ,  Tsutomu Tanaka ,  Sadayuki Suzuki ,  Shinichi Nomura ,  Mitsunori Takeshita

发明人： Kazuyuki Toyoda ,  Atsuhiko Suda ,  Issei Makiguchi ,  Tsutomu Tanaka ,  Sadayuki Suzuki ,  Shinichi Nomura ,  Mitsunori Takeshita

IPC分类号： C23F1/00

CPC分类号： H01L21/67178 ,  C23C16/54 ,  H01L21/67766 ,  H01L21/67781

摘要： A substrate processing apparatus comprises a substrate transfer section, a plurality of modules and a first substrate transfer robot provided in the substrate transfer section and capable of transferring substrates to the plurality of modules. The plurality of modules are piled up, separately from one another, in a vertical direction. Each of the plurality of modules are detachably mounted to the substrate transfer section and includes a substrate processing chamber, an intermediate chamber, a first gate valve disposed between the substrate processing chamber and the intermediate chamber, a second gate valve disposed between the intermediate chamber and the substrate transfer section, and a second substrate transfer robot disposed in the intermediate chamber. Preferably, the substrate processing chamber further comprises a second intermediate chamber having a substrate holder therein and disposed between the intermediate chamber and the substrate transfer section, and a third gate valve disposed between the second intermediate chamber and the substrate transfer section.

摘要翻译： 基板处理装置包括基板转印部，多个模块和设置在基板转印部中并能够将基板传送到多个模块的第一基板传送机械手。 多个模块在垂直方向彼此分开堆叠。 多个模块中的每一个可拆卸地安装到基板传送部分，并且包括基板处理室，中间室，设置在基板处理室和中间室之间的第一闸阀，设置在中间室和第二闸阀之间的第二闸阀 基板传送部分和设置在中间室中的第二基板传送机器人。 优选地，衬底处理室还包括第二中间室，其中具有衬底保持器，并设置在中间室和衬底转移部之间，以及设置在第二中间室和衬底转移部之间的第三闸阀。

公开(公告)号：US20090053906A1

公开(公告)日：2009-02-26

申请号：US12087779

申请日：2007-07-19

申请人： Hironobu Miya ,  Kazuhiro Hirahara ,  Yoshitaka Hamada ,  Atsuhiko Suda

发明人： Hironobu Miya ,  Kazuhiro Hirahara ,  Yoshitaka Hamada ,  Atsuhiko Suda

IPC分类号： H01L21/316 ,  B05C11/00

CPC分类号： H01L21/3141 ,  C23C16/40 ,  C23C16/45527 ,  C23C16/45546 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612 ,  H01L21/31645

摘要： Disclosed is a producing method of a semiconductor device including: loading at least one substrate into a processing chamber; forming a metal oxide film or a silicon oxide film on a surface of the substrate by repeatedly supplying a metal compound or a silicon compound, each of which is a first material, an oxide material which is a second material including an oxygen atom, and a hydride material which is a third material, into the processing chamber predetermined times; and unloading the substrate from the processing chamber.

摘要翻译： 公开了一种半导体器件的制造方法，包括：将至少一个衬底装载到处理室中; 通过重复地供给作为第一材料的金属化合物或硅化合物，作为包含氧原子的第二材料的氧化物材料，在基板的表面上形成金属氧化物膜或氧化硅膜， 作为第三材料的氢化物材料预定时间进入处理室; 并从处理室卸载基板。

公开(公告)号：US08240271B2

公开(公告)日：2012-08-14

申请号：US11990340

申请日：2006-11-01

申请人： Atsuhiko Suda

发明人： Atsuhiko Suda

IPC分类号： C23C16/00

CPC分类号： H01J37/32541 ,  H01J37/32559

摘要： To provide a substrate processing apparatus capable of easily installing a plasma discharge electrode having flexibility at a prescribed position in an electrode protective tube, and is capable of holing the plasma discharge electrode having flexibility at the prescribed position. This apparatus includes: a processing chamber that houses a plurality of substrates, with a space provided from each other in a state of being stacked; a gas supply unit that supplies a desired gas into the processing chamber; an exhaust unit that exhausts an atmosphere in the processing chamber; electrodes having flexibility that extend in a stacking direction of the substrates; a protective tube that contains each electrode; a first fitting member fixed to the tip end of each electrode; and a second fitting member disposed in a tip end part of each protective tube, the electrode being contained in the protective tube, with the first fitting member and the second fitting member connected to each other.

摘要翻译： 为了提供一种能够容易地在电极保护管中的规定位置安装具有柔性的等离子体放电电极的基板处理装置，能够使具有规定位置的柔性的等离子体放电电极。 该装置包括：处理室，其容纳多个基板，并且在堆叠状态下具有彼此设置的空间; 气体供应单元，其将期望的气体供应到处理室中; 排气单元，其排出处理室中的气氛; 具有在基板的堆叠方向上延伸的柔性的电极; 包含每个电极的保护管; 固定到每个电极的末端的第一配件; 以及设置在每个保护管的前端部的第二配件，电极被容纳在保护管中，第一配件和第二配件相互连接。

公开(公告)号：US07981815B2

公开(公告)日：2011-07-19

申请号：US12087779

申请日：2007-07-19

申请人： Hironobu Miya ,  Kazuhiro Hirahara ,  Yoshitaka Hamada ,  Atsuhiko Suda

发明人： Hironobu Miya ,  Kazuhiro Hirahara ,  Yoshitaka Hamada ,  Atsuhiko Suda

IPC分类号： H01L21/31

CPC分类号： H01L21/3141 ,  C23C16/40 ,  C23C16/45527 ,  C23C16/45546 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612 ,  H01L21/31645

摘要： Disclosed is a producing method or a semiconductor device including: loading at least one substrate into a processing chamber; forming a metal oxide film or a silicon oxide film on a surface of the substrate by repeatedly supplying a metal compound or a silicon compound, each of which is a first material, an oxide material which is a second material including an oxygen atom, and a hydride material which is a third material, into the processing chamber predetermined times; and unloading the substrate from the processing chamber.

摘要翻译： 公开了一种制造方法或半导体装置，其包括：将至少一个基板装载到处理室中; 通过重复地供给作为第一材料的金属化合物或硅化合物，作为包含氧原子的第二材料的氧化物材料，在基板的表面上形成金属氧化物膜或氧化硅膜， 作为第三材料的氢化物材料预定时间进入处理室; 并从处理室卸载基板。

公开(公告)号：US20100186774A1

公开(公告)日：2010-07-29

申请号：US12671189

申请日：2008-09-09

申请人： Hironobu Miya ,  Yuji Takebayashi ,  Masanori Sakai ,  Shinya Sasaki ,  Hirohisa Yamazaki ,  Atsuhiko Suda ,  Takashi Tanioka

发明人： Hironobu Miya ,  Yuji Takebayashi ,  Masanori Sakai ,  Shinya Sasaki ,  Hirohisa Yamazaki ,  Atsuhiko Suda ,  Takashi Tanioka

IPC分类号： B08B9/00 ,  H01L21/469

CPC分类号： C23C16/4405 ,  B08B7/0035 ,  H01L21/67109 ,  H01L21/67757 ,  H01L21/67769

摘要： Provided is a cleaning method for removing a film adhered inside a processing chamber of a substrate processing apparatus used for forming a desired film on a substrate by supplying a material gas for film formation. The method is provided with a step of supplying a halogen containing gas into the processing chamber, and a step of supplying a fluorine containing gas into the processing chamber while supplying the halogen containing gas, after starting to supply the halogen containing gas. In the step of supplying the fluorine containing gas, a supply flow volume ratio of the halogen containing gas to the entire gas supplied into the processing chamber is within a range of 20-25%.

摘要翻译： 提供了一种清洁方法，用于通过提供用于成膜的材料气体来除去附着在用于在基板上形成期望的膜的基板处理装置的处理室内的膜。 该方法具有向处理室供给含卤素气体的步骤，以及在开始供应含卤素气体之后，在供应含卤素气体的同时向处理室供应含氟气体的步骤。 在供给含氟气体的步骤中，含卤素气体与供给到处理室的全部气体的供给流量比在20〜25％的范围内。

公开(公告)号：US20090120365A1

公开(公告)日：2009-05-14

申请号：US11990340

申请日：2006-11-01

申请人： Atsuhiko Suda

发明人： Atsuhiko Suda

IPC分类号： C23C16/455

CPC分类号： H01J37/32541 ,  H01J37/32559

摘要： To provide a substrate processing apparatus capable of easily installing a plasma discharge electrode having flexibility at a prescribed position in an electrode protective tube, and is capable of holing the plasma discharge electrode having flexibility at the prescribed position. This apparatus includes: a processing chamber that houses a plurality of substrates, with a space provided from each other in a state of being stacked; a gas supply unit that supplies a desired gas into the processing chamber; an exhaust unit that exhausts an atmosphere in the processing chamber; electrodes having flexibility that extend in a stacking direction of the substrates; a protective tube that contains each electrode; a first fitting member fixed to the tip end of each electrode; and a second fitting member disposed in a tip end part of each protective tube, the electrode being contained in the protective tube, with the first fitting member and the second fitting member connected to each other.

摘要翻译： 为了提供一种能够容易地在电极保护管中的规定位置安装具有柔性的等离子体放电电极的基板处理装置，能够使具有规定位置的柔性的等离子体放电电极。 该装置包括：处理室，其容纳多个基板，并且在堆叠状态下具有彼此设置的空间; 气体供应单元，其将期望的气体供应到处理室中; 排气单元，其排出处理室中的气氛; 具有在基板的堆叠方向上延伸的柔性的电极; 包含每个电极的保护管; 固定到每个电极的末端的第一配件; 以及设置在每个保护管的末端部分中的第二配件，所述电极容纳在所述保护管中，所述第一配合构件和所述第二配件构件彼此连接。

公开(公告)号：US5480702A

公开(公告)日：1996-01-02

申请号：US322033

申请日：1994-10-13

申请人： Taiji Matsumoto ,  Atsuhiko Suda ,  Kenji Sumiya ,  Yoshinori Yamamoto

发明人： Taiji Matsumoto ,  Atsuhiko Suda ,  Kenji Sumiya ,  Yoshinori Yamamoto

IPC分类号： B42D15/10 ,  B41M5/00 ,  B41M5/382 ,  B41M5/50 ,  B41M5/52 ,  C09D5/23 ,  C09D127/04 ,  C09D127/06 ,  C09D175/04 ,  C09D175/08 ,  G11B5/80 ,  B32B27/20 ,  B32B27/30 ,  B32B27/40

CPC分类号： B41M5/52 ,  B41M5/5218 ,  B41M5/5227 ,  B41M5/5254 ,  B41M5/5281 ,  Y10T428/24917 ,  Y10T428/254 ,  Y10T428/256 ,  Y10T428/259 ,  Y10T428/31565 ,  Y10T428/31605 ,  Y10T428/31699 ,  Y10T428/31797 ,  Y10T428/31906

摘要： An article comprising a substrate and an indicia-receiving layer on the substrate which comprises a pigment and at least one binder resin selected from the group consisting of vinyl chloride-vinyl acetate copolymers and polyurethane resins is provided.

摘要翻译： 提供了一种在基材上包含基材和标记接收层的制品，其包含颜料和至少一种选自氯乙烯 - 乙酸乙烯酯共聚物和聚氨酯树脂的粘合剂树脂。

公开(公告)号：US08506714B2

公开(公告)日：2013-08-13

申请号：US11990499

申请日：2007-01-24

申请人： Tomoki Horita ,  Kazuhiro Hirahara ,  Hironobu Miya ,  Atsuhiko Suda ,  Hirohisa Yamazaki

发明人： Tomoki Horita ,  Kazuhiro Hirahara ,  Hironobu Miya ,  Atsuhiko Suda ,  Hirohisa Yamazaki

IPC分类号： C23C16/455 ,  C23C16/453 ,  C23C16/52 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4407 ,  C23C16/4481 ,  C23C16/455

摘要： Disclosed is a substrate processing system, including: a processing chamber to process a substrate; a vaporizing unit to vaporize a material of liquid; a supply system to supply the processing chamber with gas of the material vaporized by the vaporizing unit; an exhaust system to exhaust an atmosphere in the processing chamber; and a cleaning liquid supply system to supply the vaporizing unit with cleaning liquid for cleaning a product deposited in the vaporizing unit, wherein the cleaning liquid supply system supplies at least two kinds of cleaning liquids into the vaporizing unit so that the product can be removed from the vaporizing unit by action of the two kinds of cleaning liquids on the product.

摘要翻译： 公开了一种基板处理系统，包括：处理基板; 用于蒸发液体材料的蒸发单元; 用于向所述处理室供应由所述蒸发单元蒸发的材料的气体的供应系统; 用于排出处理室中的气氛的排气系统; 以及清洗液体供给系统，用于向蒸发单元提供清洁液体，用于清洗沉积在蒸发单元中的产物，其中清洗液供应系统将至少两种清洗液体供应到蒸发单元中，从而可以将产品从 蒸发单元通过两种清洁液体在产品上的作用。

公开(公告)号：US20090071505A1

公开(公告)日：2009-03-19

申请号：US12188440

申请日：2008-08-08

申请人： Hironobu Miya ,  Yuji Takebayashi ,  Masanori Sakai ,  Shinya Sasaki ,  Hirohisa Yamazaki ,  Atsuhiko Suda

发明人： Hironobu Miya ,  Yuji Takebayashi ,  Masanori Sakai ,  Shinya Sasaki ,  Hirohisa Yamazaki ,  Atsuhiko Suda

IPC分类号： B08B7/00 ,  C23C16/00

CPC分类号： C23C16/4405 ,  B08B7/0035

摘要： Provided is a cleaning method which can efficiently remove a film, such as a high dielectric constant oxide film, which is difficult to be etched by a fluorine-containing gas alone. As a cleaning method of a substrate processing apparatus which forms a desired film on a wafer by supplying a source gas, there is provided a cleaning method for removing a film attached to the inside of a processing chamber. The cleaning method includes: a step of supplying a halogen-containing gas into the processing chamber; and a step of supplying a fluorine-containing gas into the processing chamber, after starting the supply of the halogen-containing gas, wherein, in the step of supplying the fluorine-containing gas, the fluorine-containing gas is supplied while supplying the halogen-containing gas into the processing chamber.

摘要翻译： 本发明提供一种能够有效地除去难以仅通过含氟气体进行蚀刻的高介电常数氧化膜等的膜的清洗方法。 作为通过供给源气体在晶片上形成期望的膜的基板处理装置的清洗方法，提供了一种用于除去附着在处理室内部的膜的清洗方法。 清洗方法包括：向处理室供给含卤素气体的步骤; 以及在开始供给含卤素气体之后向处理室供给含氟气体的步骤，其中在供给含氟气体的步骤中，供应含氟气体，同时供给卤素 的气体进入处理室。