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    Method of mounting a semiconductor laser component on a submount
    2.
    发明申请
    Method of mounting a semiconductor laser component on a submount 审中-公开
    将半导体激光器部件安装在基座上的方法

    公开(公告)号：US20050127144A1

    公开(公告)日：2005-06-16

    申请号：US10730982

    申请日：2003-12-10

    申请人： Atuhito Mochida ,  Korekazu Mochida ,  Kyoko Mochida ,  Hiroto Inoue ,  Suguru Nakao ,  Yukihiro Iwata ,  Akira Takamori ,  Hideto Adachi ,  Masatoshi Tamura

    发明人： Atuhito Mochida ,  Korekazu Mochida ,  Kyoko Mochida ,  Hiroto Inoue ,  Suguru Nakao ,  Yukihiro Iwata ,  Akira Takamori ,  Hideto Adachi ,  Masatoshi Tamura

    IPC分类号： B23K20/02 ,  B23K31/02

    CPC分类号： B23K20/023 ,  B23K2101/36 ,  H01L24/83 ,  H01L2224/83192

    摘要： The present invention to provide a method of mounting a semiconductor laser component capable of preventing deterioration of laser characteristics and destruction of the semiconductor laser component due to residual stresses as well as preventing decrease of a lifetime due to increase in temperature of the semiconductor laser component. The method of mounting a semiconductor laser device which comprises a step of pressure bonding a semiconductor laser component on a submount by a collet while a bonding member is heated to be fused or melt on a submount by heating a table on which the submount is placed, for example, characterized in that the table and the collet are heated to a temperature higher than a fusing point of said bonding member so as not to occur the heat transfer substantially to a collet, and then heating of the table and the collet is terminated with maintaining the pressure bonding state.

    摘要翻译： 本发明提供一种安装半导体激光器部件的方法，该半导体激光器部件能够防止由于残余应力引起的激光特性的劣化和半导体激光器部件的破坏以及防止半导体激光部件的温度升高引起的寿命的降低。 一种半导体激光装置的安装方法，其特征在于，在通过加热配置有所述基台的工作台的同时，在接合部件被加热熔融或熔融在副安装座上时，通过夹头将半导体激光部件压接在副安装座上的工序， 例如，其特征在于，将工作台和夹头加热到高于所述接合构件的熔点的温度，以便不将热传递基本上发生到夹头，然后用桌子和夹头加热，以 保持压接状态。

    Semiconductor laser and optical disk device using the laser
    3.
    发明授权
    Semiconductor laser and optical disk device using the laser 有权
    半导体激光和光盘装置使用激光

    公开(公告)号：US06195374B1

    公开(公告)日：2001-02-27

    申请号：US09546254

    申请日：2000-04-10

    申请人： Isao Kidoguchi ,  Hideto Adachi ,  Masaya Mannoh ,  Toshiya Fukuhisa ,  Akira Takamori

    发明人： Isao Kidoguchi ,  Hideto Adachi ,  Masaya Mannoh ,  Toshiya Fukuhisa ,  Akira Takamori

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  G11B7/127 ,  H01S3/1118 ,  H01S5/0601 ,  H01S5/0615 ,  H01S5/0658 ,  H01S5/2004 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/347

    摘要： An n-type GaAs buffer layer 702, an n-type AlGaInP cladding layer 703, a multiple quantum well active layer 704 made of AlGaInP and GaInP, a first p-type AlGaInP cladding layer 705a, an optical guide layer 707, a second p-type cladding layer 705b, a p-type GaInP saturable absorption layer 706, and a third p-type AlGaInP cladding layer 707 are sequentially formed on an n-type GaAs substrate 701. In this structure, the volume of the saturable absorption layer is reduced, and the optical guide layer is provided. As the volume of the saturable absorption layer becomes smaller, the more easily the carrier density can be increased, the more easily the saturated state can be attained, and the more remarkable the saturable absorption effect becomes. Thus, a semiconductor laser having stable self-oscillation characteristics and, as a result, having a low relative noise intensity is realized.

    摘要翻译： n型GaAs缓冲层702，n型AlGaInP包层703，由AlGaInP和GaInP构成的多量子阱有源层704，第一p型AlGaInP包层705a，导光层707，第二p 型包层705b，p型GaInP可饱和吸收层706和第三p型AlGaInP包层707依次形成在n型GaAs衬底701上。在该结构中，可饱和吸收层的体积为 并且提供光导层。 随着饱和吸收层的体积变小，载流子密度越容易增加，饱和状态越容易实现，饱和吸收效果越显着。 因此，实现了具有稳定的自振动特性并因此具有低相对噪声强度的半导体激光器。

    Semiconductor device and method for producing the same
    5.
    发明授权
    Semiconductor device and method for producing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07037743B2

    公开(公告)日：2006-05-02

    申请号：US10699986

    申请日：2003-11-03

    申请人： Toshikazu Onishi ,  Hideto Adachi ,  Masaya Mannou ,  Akira Takamori

    发明人： Toshikazu Onishi ,  Hideto Adachi ,  Masaya Mannou ,  Akira Takamori

    IPC分类号： H01L21/00 ,  H01S5/00

    CPC分类号： B82Y20/00 ,  H01S5/162 ,  H01S5/2231 ,  H01S5/3425 ,  H01S5/34326

    摘要： A semiconductor laser device is provided that includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer provided on the semiconductor substrate and an active layer provided on the cladding layer. The active layer has a super-lattice structure including a disordered region in a vicinity of a cavity end face. A first cladding layer of a second conductivity type is provided on the active layer, an etching stop layer of the second conductivity type is provided on the first cladding layer and a second cladding layer of the second conductivity type is provided on the etching stop layer. The second cladding layer forms a ridge structure that extends along a cavity length direction. An impurity concentration in the etching stop layer in the vicinity of the cavity end face is equal to or smaller than about 2×1018 cm−3.

    摘要翻译： 提供一种半导体激光器件，其包括第一导电类型半导体衬底，设置在半导体衬底上的第一导电类型覆层和设置在包覆层上的有源层。 有源层具有包括空腔端面附近的无序区域的超晶格结构。 在有源层上设置有第二导电类型的第一包层，在第一包层上设置第二导电类型的蚀刻阻挡层，在蚀刻停止层上设置第二导电类型的第二包覆层。 第二包层形成沿着空腔长度方向延伸的脊结构。 在腔体端面附近的蚀刻停止层中的杂质浓度等于或小于约2×10 18 cm -3 -3。

    Semiconductor laser and optical disk device using the laser
    8.
    发明授权
    Semiconductor laser and optical disk device using the laser 有权
    半导体激光和光盘装置使用激光

    公开(公告)号：US06373874B1

    公开(公告)日：2002-04-16

    申请号：US09051014

    申请日：1998-08-14

    申请人： Isao Kidoguchi ,  Hideto Adachi ,  Masaya Mannoh ,  Toshiya Fukuhisa ,  Akira Takamori

    发明人： Isao Kidoguchi ,  Hideto Adachi ,  Masaya Mannoh ,  Toshiya Fukuhisa ,  Akira Takamori

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  G11B7/127 ,  H01S3/1118 ,  H01S5/0601 ,  H01S5/0615 ,  H01S5/0658 ,  H01S5/2004 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/347

    摘要： An n-type GaAs buffer layer 702, an n-type AlGaInP cladding layer 703, a multiple quantum well active layer 704 made of AlGaInP and GaInP, a first p-type AlGaInP cladding layer 705a, an optical guide layer 707, a second p-type cladding layer 705b, a p-type GaInP saturable absorption layer 706, and a third p-type AlGaInP cladding layer 707 are sequentially formed on an n-type GaAs substrate 701. In this structure, the volume of the saturable absorption layer is reduced, and the optical guide layer is provided. As the volume of the saturable absorption layer becomes smaller, the more easily the carrier density can be increased, the more easily the saturated state can be attained, and the more remarkable the saturable absorption effect becomes. Thus, a semiconductor laser having stable self-oscillation characteristics and, as a result, having a low relative noise intensity is realized.

    摘要翻译： n型GaAs缓冲层702，n型AlGaInP包层703，由AlGaInP和GaInP构成的多量子阱有源层704，第一p型AlGaInP包层705a，导光层707，第二p 型包层705b，p型GaInP可饱和吸收层706和第三p型AlGaInP包层707依次形成在n型GaAs衬底701上。在该结构中，可饱和吸收层的体积为 并且提供光导层。 随着饱和吸收层的体积变小，载流子密度越容易增加，饱和状态越容易实现，饱和吸收效果越显着。 因此，实现了具有稳定的自振动特性并因此具有低相对噪声强度的半导体激光器。

    Semiconductor laser and method for manufacturing the same
    9.
    发明授权
    Semiconductor laser and method for manufacturing the same 失效
    半导体激光器及其制造方法

    公开(公告)号：US06888870B2

    公开(公告)日：2005-05-03

    申请号：US10210656

    申请日：2002-07-31

    申请人： Koji Makita ,  Hideto Adachi ,  Toshiya Kawata ,  Hiroshi Asaka ,  Osamu Imafuji ,  Toshiya Fukuhisa ,  Akira Takamori

    发明人： Koji Makita ,  Hideto Adachi ,  Toshiya Kawata ,  Hiroshi Asaka ,  Osamu Imafuji ,  Toshiya Fukuhisa ,  Akira Takamori

    IPC分类号： H01S5/16 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/00

    CPC分类号： H01S5/2231 ,  H01S5/2054 ,  H01S5/2081 ,  H01S5/2206 ,  H01S5/222 ,  H01S5/3211

    摘要： A semiconductor laser has a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer formed on a first conduction-type semiconductor substrate. The second conduction-type cladding layer has a mesa-type stripe-shaped recessed portion in at least four spots, so as to form a central ridge portion, which constitutes a ridge-type current confinement portion, and two or more lateral ridge portions, which are positioned on both sides of the central ridge portion, have a height larger than to that of the central ridge portion, and include the second conduction-type cladding layer. An insulation film with a lower refractive index than the second conduction-type cladding layer is formed in a pair of stripes disposed respectively in the regions from the side surface of the second conduction-type cladding layer on both side surfaces of the central ridge portion toward the outside. The insulation film is not formed on the central ridge portion.

    摘要翻译： 半导体激光器具有形成在第一导电型半导体基板上的第一导电型包覆层，有源层和第二导电型包覆层。 第二导电型包覆层在至少四个点中具有台面状的条状凹部，以形成构成脊型电流限制部的中心脊部分，以及两个以上的侧脊部， 位于中央脊部的两侧的高度比中心脊部的高度大，并且包括第二导电型包覆层。 具有比第二导电型包覆层低的折射率的绝缘膜分别形成在从第二导电型包覆层的侧表面在中心脊部的两个侧表面上的区域中分别设置的一对条带 外。 绝缘膜不形成在中心脊部上。

    Semiconductor device and method for producing the same
    10.
    发明授权
    Semiconductor device and method for producing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US06671301B1

    公开(公告)日：2003-12-30

    申请号：US09565937

    申请日：2000-05-05

    申请人： Toshikazu Onishi ,  Hideto Adachi ,  Masaya Mannou ,  Akira Takamori

    发明人： Toshikazu Onishi ,  Hideto Adachi ,  Masaya Mannou ,  Akira Takamori

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/162 ,  H01S5/2231 ,  H01S5/3425 ,  H01S5/34326

    摘要： A semiconductor laser device including: a semiconductor substrate of a first conductivity type; a cladding layer of the first conductivity type provided on the semiconductor substrate; an active layer provided on the cladding layer of the first conductivity type, the active layer having a super-lattice structure including a disordered region in a vicinity of at least one cavity end face; a first cladding layer of a second conductivity type provided on the active layer; an etching stop layer of the second conductivity type provided on the first cladding layer; and a second cladding layer of the second conductivity type provided on the etching stop layer, the second cladding layer forming a ridge structure, the ridge structure extending along a cavity length direction and having a predetermined width. A concentration of an impurity in the etching stop layer in the vicinity of the at least one cavity end face is greater than a concentration of the impurity in the interior of a cavity and equal to or smaller than about 2×1018 cm−3.

    摘要翻译： 一种半导体激光器件，包括：第一导电类型的半导体衬底; 设置在半导体衬底上的第一导电类型的覆层; 设置在所述第一导电类型的包覆层上的有源层，所述有源层具有在至少一个腔端面附近包括无序区域的超晶格结构; 设置在有源层上的第二导电类型的第一包层; 设置在第一包层上的第二导电类型的蚀刻停止层; 以及设置在所述蚀刻停止层上的所述第二导电类型的第二包层，所述第二包层形成脊结构，所述脊结构沿着空腔长度方向延伸并具有预定宽度。 在至少一个空腔端面附近的蚀刻停止层中的杂质浓度大于空腔内的杂质的浓度，并且等于或小于约2×10 18 cm -3 >。