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公开(公告)号：US20130049158A1
公开(公告)日：2013-02-28
申请号：US13220816
申请日：2011-08-30
IPC分类号： H01L31/0352 , B32B5/16 , H01L21/302 , H01L29/06 , B82Y99/00
CPC分类号： H01L31/035227 , C03C15/00 , C03C17/06 , C03C2218/34 , H01L31/022433 , H01L31/02363 , H01L31/035281 , H01L31/0376 , H01L31/0392 , H01L31/03921 , H01L31/03923 , H01L31/03925 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/541 , Y02E10/548 , Y10S438/945 , Y10S977/773 , Y10S977/779 , Y10T428/12014 , Y10T428/12069 , Y10T428/12076 , Y10T428/24479 , Y10T428/24488 , Y10T428/2982
摘要： Hemispheres and spheres are formed and employed for a plurality of applications. Hemispheres are employed to form a substrate having an upper surface and a lower surface. The upper surface includes peaks of pillars which have a base attached to the lower surface. The peaks have a density defined at the upper surface by an array of hemispherical metal structures that act as a mask during an etch to remove substrate material down to the lower surface during formation of the pillars. The pillars are dense and uniform and include a microscale average diameter. The spheres are formed as independent metal spheres or nanoparticles for other applications.
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公开(公告)号：US20130049150A1
公开(公告)日：2013-02-28
申请号：US13606916
申请日：2012-09-07
IPC分类号： B32B3/30 , H01L31/0352
CPC分类号： H01L31/035227 , C03C15/00 , C03C17/06 , C03C2218/34 , H01L31/022433 , H01L31/02363 , H01L31/035281 , H01L31/0376 , H01L31/0392 , H01L31/03921 , H01L31/03923 , H01L31/03925 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/541 , Y02E10/548 , Y10S438/945 , Y10S977/773 , Y10S977/779 , Y10T428/12014 , Y10T428/12069 , Y10T428/12076 , Y10T428/24479 , Y10T428/24488 , Y10T428/2982
摘要： Hemispheres and spheres are formed and employed for a plurality of applications. Hemispheres are employed to form a substrate having an upper surface and a lower surface. The upper surface includes peaks of pillars which have a base attached to the lower surface. The peaks have a density defined at the upper surface by an array of hemispherical metal structures that act as a mask during an etch to remove substrate material down to the lower surface during formation of the pillars. The pillars are dense and uniform and include a microscale average diameter. The spheres are formed as independent metal spheres or nanoparticles for other applications.
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公开(公告)号：US08685858B2
公开(公告)日：2014-04-01
申请号：US13220816
申请日：2011-08-30
IPC分类号： H01L21/311
CPC分类号： H01L31/035227 , C03C15/00 , C03C17/06 , C03C2218/34 , H01L31/022433 , H01L31/02363 , H01L31/035281 , H01L31/0376 , H01L31/0392 , H01L31/03921 , H01L31/03923 , H01L31/03925 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/541 , Y02E10/548 , Y10S438/945 , Y10S977/773 , Y10S977/779 , Y10T428/12014 , Y10T428/12069 , Y10T428/12076 , Y10T428/24479 , Y10T428/24488 , Y10T428/2982
摘要： Hemispheres and spheres are formed and employed for a plurality of applications. Hemispheres are employed to form a substrate having an upper surface and a lower surface. The upper surface includes peaks of pillars which have a base attached to the lower surface. The peaks have a density defined at the upper surface by an array of hemispherical metal structures that act as a mask during an etch to remove substrate material down to the lower surface during formation of the pillars. The pillars are dense and uniform and include a microscale average diameter. The spheres are formed as independent metal spheres or nanoparticles for other applications.
摘要翻译： 半球和球形成并用于多种应用。 半球用于形成具有上表面和下表面的基底。 上表面包括具有附接到下表面的基部的柱的峰。 峰在上表面具有通过半球形金属结构的阵列定义的密度，其在蚀刻期间用作掩模，以在形成支柱期间将基底材料移除到下表面。 支柱是致密和均匀的，并且包括微米级的平均直径。 球形成为独立的金属球体或纳米颗粒用于其他应用。
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4.发明申请UNIFORMLY DISTRIBUTED SELF-ASSEMBLED SOLDER DOT FORMATION FOR HIGH EFFICIENCY SOLAR CELLS 有权高效率太阳能电池的均匀分布式自组装焊料成型公开(公告)号：US20140065752A1
公开(公告)日：2014-03-06
申请号：US13597980
申请日：2012-08-29
IPC分类号： H01L31/18
CPC分类号： H01L31/02366 , C03C15/00 , C03C2218/34 , Y02E10/50
摘要： A method for fabricating a photovoltaic device includes performing a gettering process in a processing chamber which restricts formation of a layer of gettering materials on a substrate and forming a solder layer on the substrate. The solder layer is annealed to form uniformly distributed solder dots which grow on the substrate. The substrate is etched using the solder dots to protect portions of the substrate and form cones in the substrate such that the cones provide a three-dimensional radiation absorbing structure for the photovoltaic device.
摘要翻译： 一种制造光伏器件的方法包括在处理室中进行吸气处理，其限制在衬底上形成吸气材料层并在衬底上形成焊料层。 将焊料层退火以形成在衬底上生长的均匀分布的焊点。 使用焊点蚀刻衬底以保护衬底的部分并在衬底中形成锥体，使得锥体为光伏器件提供三维辐射吸收结构。
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5.发明申请UNIFORMLY DISTRIBUTED SELF-ASSEMBLED SOLDER DOT FORMATION FOR HIGH EFFICIENCY SOLAR CELLS 有权高效率太阳能电池的均匀分布式自组装焊料成型公开(公告)号：US20140060628A1
公开(公告)日：2014-03-06
申请号：US13611047
申请日：2012-09-12
IPC分类号： H01L31/0236
CPC分类号： H01L31/02366 , C03C15/00 , C03C2218/34 , Y02E10/50
摘要： A substrate for photovoltaic device includes a textured surface formed from silicon-based material. The textured surface includes a plurality of cones uniformly distributed across the textured surface. The uniformly distributed cones are configured by etching from a top surface of the substrate using a self-assembled solder dot mask evaporated on the substrate prior to etching. The cones are uniformly distributed as a result of gettering a process chamber prior to forming the solder dot mask. The cones have a height/width ratio between about 1 to about 4, and the cones have a density between 108 to 109 cones/cm2.
摘要翻译： 用于光伏器件的衬底包括由硅基材料形成的纹理表面。 纹理表面包括均匀分布在纹理化表面上的多个锥体。 均匀分布的锥体通过在蚀刻之前使用在衬底上蒸发的自组装焊点掩模从衬底的顶表面进行蚀刻而配置。 由于在形成焊点掩模之前吸收处理室，锥体均匀分布。 锥体具有约1至约4之间的高度/宽度比，并且锥体具有在108至109锥/ cm 2之间的密度。
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6.发明授权Uniformly distributed self-assembled solder dot formation for high efficiency solar cells 有权用于高效率太阳能电池的均匀分布的自组装焊点形成公开(公告)号：US08841544B2
公开(公告)日：2014-09-23
申请号：US13611047
申请日：2012-09-12
IPC分类号： H01L31/00
CPC分类号： H01L31/02366 , C03C15/00 , C03C2218/34 , Y02E10/50
摘要： A substrate for photovoltaic device includes a textured surface formed from silicon-based material. The textured surface includes a plurality of cones uniformly distributed across the textured surface. The uniformly distributed cones are configured by etching from a top surface of the substrate using a self-assembled solder dot mask evaporated on the substrate prior to etching. The cones are uniformly distributed as a result of gettering a process chamber prior to forming the solder dot mask. The cones have a height/width ratio between about 1 to about 4, and the cones have a density between 108 to 109 cones/cm2.
摘要翻译： 用于光伏器件的衬底包括由硅基材料形成的纹理表面。 纹理表面包括均匀分布在纹理化表面上的多个锥体。 均匀分布的锥体通过在蚀刻之前使用在衬底上蒸发的自组装焊点掩模从衬底的顶表面进行蚀刻而配置。 由于在形成焊点掩模之前吸收处理室，锥体均匀分布。 锥体具有约1至约4之间的高度/宽度比，并且锥体具有在108至109锥/ cm 2之间的密度。
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7.发明授权Method of fabricating uniformly distributed self-assembled solder dot formation for high efficiency solar cells 有权为高效率太阳能电池制造均匀分布的自组装焊点形成方法公开(公告)号：US08889456B2
公开(公告)日：2014-11-18
申请号：US13597980
申请日：2012-08-29
CPC分类号： H01L31/02366 , C03C15/00 , C03C2218/34 , Y02E10/50
摘要： A method for fabricating a photovoltaic device includes performing a gettering process in a processing chamber which restricts formation of a layer of gettering materials on a substrate and forming a solder layer on the substrate. The solder layer is annealed to form uniformly distributed solder dots which grow on the substrate. The substrate is etched using the solder dots to protect portions of the substrate and form cones in the substrate such that the cones provide a three-dimensional radiation absorbing structure for the photovoltaic device.
摘要翻译： 一种制造光伏器件的方法包括在处理室中进行吸气处理，其限制在衬底上形成吸气材料层并在衬底上形成焊料层。 将焊料层退火以形成在衬底上生长的均匀分布的焊点。 使用焊点蚀刻衬底以保护衬底的部分并在衬底中形成锥体，使得锥体为光伏器件提供三维辐射吸收结构。
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公开(公告)号：US09040428B2
公开(公告)日：2015-05-26
申请号：US13606916
申请日：2012-09-07
IPC分类号： H01L21/302 , H01L31/0352 , H01L31/0392 , H01L31/075 , H01L31/056
CPC分类号： H01L31/035227 , C03C15/00 , C03C17/06 , C03C2218/34 , H01L31/022433 , H01L31/02363 , H01L31/035281 , H01L31/0376 , H01L31/0392 , H01L31/03921 , H01L31/03923 , H01L31/03925 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/541 , Y02E10/548 , Y10S438/945 , Y10S977/773 , Y10S977/779 , Y10T428/12014 , Y10T428/12069 , Y10T428/12076 , Y10T428/24479 , Y10T428/24488 , Y10T428/2982
摘要： Hemispheres and spheres are formed and employed for a plurality of applications. Hemispheres are employed to form a substrate having an upper surface and a lower surface. The upper surface includes peaks of pillars which have a base attached to the lower surface. The peaks have a density defined at the upper surface by an array of hemispherical metal structures that act as a mask during an etch to remove substrate material down to the lower surface during formation of the pillars. The pillars are dense and uniform and include a microscale average diameter. The spheres are formed as independent metal spheres or nanoparticles for other applications.
摘要翻译： 半球和球形成并用于多种应用。 半球用于形成具有上表面和下表面的基底。 上表面包括具有附接到下表面的基部的柱的峰。 峰在上表面具有通过半球形金属结构的阵列定义的密度，其在蚀刻期间用作掩模，以在形成支柱期间将基底材料移除到下表面。 支柱是致密和均匀的，并且包括微米级的平均直径。 球形成为独立的金属球体或纳米颗粒用于其他应用。
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公开(公告)号：US09331220B2
公开(公告)日：2016-05-03
申请号：US13173097
申请日：2011-06-30
IPC分类号： H01L31/0236 , H01L31/0352 , H01L31/02 , H01L31/075 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/02366 , H01L31/022483 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03762 , H01L31/075 , H01L31/077 , H01L31/1804 , H01L31/1888 , Y02E10/50
摘要： A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.
摘要翻译： 一种光电器件和方法包括在衬底中形成多个柱结构，在柱结构上形成第一电极层，并在第一衬底上形成包括N型层，P型层和本征层的连续光伏堆叠 电极。 第二电极层沉积在光伏堆叠上，使得在柱结构之间的第二电极层中出现间隙或裂缝。 湿蚀刻第二电极层以打开间隙或裂缝并且减小第二电极层以在光伏堆叠上形成基本上均匀厚度的三维电极。
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公开(公告)号：US09214577B2
公开(公告)日：2015-12-15
申请号：US13407006
申请日：2012-02-28
IPC分类号： H01L31/0224 , H01L31/0232 , H01L31/075 , H01L31/18
CPC分类号： H01L31/03767 , H01L31/022466 , H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a work function that falls substantially in a middle of a barrier formed between the transparent electrode and the p-type layer to provide a greater resistance to light induced degradation. An intrinsic layer and an n-type layer are formed over the p-type layer.
摘要翻译： 形成光伏器件的方法包括在透明电极和p型层之间形成缓冲层。 缓冲层包括基本上落在形成在透明电极和p型层之间的屏障的中间的功函数，以提供对光诱导的降解更大的阻力。 在p型层上形成本征层和n型层。
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