摘要:
The assemblies of the present invention comprise an electrode, an absorber layer and a polyimide film. The polyimide film contains from about 40 to about 95 weight percent of a polyimide derived from: i. at least one aromatic dianhydride, at least about 85 mole percent of such aromatic dianhydride being a rigid rod type dianhydride, and ii. at least one aromatic diamine, at least about 85 mole percent of such aromatic diamine being a rigid rod type diamine. The polyimide films of the present disclosure further comprise a filler that: i. is less than about 800 nanometers in at least one dimension; ii. has an aspect ratio greater than about 3:1 ; iii. is less than the thickness of the polyimide film in all dimensions; and iv. is present in an amount from about 5 to about 60 weight percent of the total weight of the polyimide film.
摘要:
An interposer film for IC packaging is disclosed. The interposer film comprises a substrate that supports a plurality of electrically conductive domains. The substrate contains a rigid rod type polyimide and about 5-60 wt % filler. The filler has at least one dimension that (on average) is less than about 800 nanometers, and the filler also has an average aspect ratio greater than about 3:1.
摘要:
A process for forming at least one photovoltaic component on a substrate is described. The substrate comprises a polyimide and a sub-micron filler. The polyimide is derived substantially or wholly from rigid rod monomers and the sub-micron filler has an aspect ratio of at least 3:1. The substrates of the present disclosure are particularly well suited for photovoltaic applications, due at least in part to high resistance to hygroscopic expansion and relatively high levels of thermal and dimensional stability.
摘要:
Laminate structures are disclosed, comprising a metal foil supporting a polyimide dielectric layer. The polyimide dielectric layer comprises a polyimide derived from at least one aromatic rigid rod diamine and at least one aromatic rigid rod dianhydride to provide a thermally and dimensionally stable polyimide. A bottom electrode is formed directly on the polyimide dielectric layer surface, and a CIGS absorber layer is formed directly on the bottom electrode. The CIGS laminates of the present disclosure can be incorporated into CIGS type solar cells, and the laminates further allow such CIGS solar cells to be monolithically integrated into a photovoltaic module on a single substrate.
摘要:
A process for forming at least one transistor on a substrate is described. The substrate comprises a polyimide and a nanoscopic filler. The polyimide is derived substantially or wholly from rigid rod monomers and the nanoscopic filler has an aspect ratio of at least 3:1. The substrates of the present disclosure are particularly well suited for thin film transistor applications, due at least in part to high resistance to hygroscopic expansion and relatively high levels of thermal and dimensional stability.
摘要:
The films of the present disclosure have a thickness from about 8 to about 150 microns and contain from about 40 to about 95 weight percent of a polyimide derived from: i. at least one aromatic dianhydride, at least about 85 mole percent of such aromatic dianhydride being a rigid rod type monomer, and ii. at least one aromatic diamine, at least about 85 mole percent of such aromatic diamine being a rigid rod type monomer. The films of the present disclosure further comprise a filler that: i. is less than about 800 nanometers in at least one dimension; ii. has an aspect ratio greater than about 3:1; iii. is less than the thickness of the film in all dimensions; and iv. is present in an amount from about 5 to about 60 weight percent of the total weight of the film.
摘要:
A process for forming at least one transistor on a substrate is described. The substrate comprises a polyimide and a nanoscopic filler. The polyimide is derived substantially or wholly from rigid rod monomers and the nanoscopic filler has an aspect ratio of at least 3:1. The substrates of the present disclosure are particularly well suited for thin film transistor applications, due at least in part to high resistance to hygroscopic expansion and relatively high levels of thermal and dimensional stability.
摘要:
The present disclosure relates generally to a light emitting diode assembly and a thermal control blanket. The light emitting diode assembly and the thermal control blanket have advantageous reflective and thermal properties.
摘要:
The present disclosure is directed to a corona resistant structure having a polyimide layer and an adhesive layer. The polyimide layer is composed of a chemically converted polyimide and a corona resistant composite filler. The chemically converted polyimide is derived from at least 50 mole percent of an aromatic dianhydride and at least 50 mole percent of an aromatic diamine. The corona resistant composite filler has an organic component and an inorganic ceramic oxide component. The weight ratio of the organic component to the inorganic ceramic oxide component is from 0.01 to 1.0. At least a portion of the organic component comprises an organo-siloxane moiety or an organo-metaloxane moiety.
摘要:
The present disclosure is directed to a base film having a thickness from 8 to 152 microns, a 60 degree gloss value from 2 to 35, an optical density greater than or equal to 2 and a dielectric strength greater than 1400 V/mil. The base film comprises a chemically converted (partially or wholly aromatic) polyimide in an amount from 71 to 96 weight percent of the base film. The base film further comprises a pigment and a matting agent. The matting agent is present in an amount from 1.6 to 10 weight percent of the base film, has a median particle size from 1.3 to 10 microns, and has a density from 2 to 4.5 g/cc. The pigment is present in an amount from 2 to 9 weight percent of the base film. The present disclosure is also directed to coverlay films comprising the base film in combination with an adhesive layer.