摘要:
Laminate structures are disclosed, comprising a metal foil supporting a polyimide dielectric layer. The polyimide dielectric layer comprises a polyimide derived from at least one aromatic rigid rod diamine and at least one aromatic rigid rod dianhydride to provide a thermally and dimensionally stable polyimide. A bottom electrode is formed directly on the polyimide dielectric layer surface, and a CIGS absorber layer is formed directly on the bottom electrode. The CIGS laminates of the present disclosure can be incorporated into CIGS type solar cells, and the laminates further allow such CIGS solar cells to be monolithically integrated into a photovoltaic module on a single substrate.
摘要:
A process for forming at least one transistor on a substrate is described. The substrate comprises a polyimide and a nanoscopic filler. The polyimide is derived substantially or wholly from rigid rod monomers and the nanoscopic filler has an aspect ratio of at least 3:1. The substrates of the present disclosure are particularly well suited for thin film transistor applications, due at least in part to high resistance to hygroscopic expansion and relatively high levels of thermal and dimensional stability.
摘要:
The films of the present disclosure have a thickness from about 8 to about 150 microns and contain from about 40 to about 95 weight percent of a polyimide derived from: i. at least one aromatic dianhydride, at least about 85 mole percent of such aromatic dianhydride being a rigid rod type monomer, and ii. at least one aromatic diamine, at least about 85 mole percent of such aromatic diamine being a rigid rod type monomer. The films of the present disclosure further comprise a filler that: i. is less than about 800 nanometers in at least one dimension; ii. has an aspect ratio greater than about 3:1; iii. is less than the thickness of the film in all dimensions; and iv. is present in an amount from about 5 to about 60 weight percent of the total weight of the film.
摘要:
A film is disclosed, containing 40-100 weight percent polyimide. The polyimide is derived from a dianhydride component and a diamine component. The dianhydride component is at least 3,3′,4,4′-biphenyl tetracarboxylic dianhydride (BPDA), and optionally is also pyromellitic dianhydride (PMDA) in a mole ratio of 50-100:50-0 (BPDA:PMDA). The diamine component comprises 1,5-naphthalenediamine (1,5-ND) and 1,4-diaminobenzene (PPD) and/or meta phenylene diamine (MPD) in a mole ratio of 15-95:85-5 (1,5-ND:PPD+MPD). The films have exceptional high temperature storage modulus (elastic modulus) and exceptionally low high temperature creep (eplast).
摘要:
The present disclosure is directed to a polyimide film. The film is composed of a polyimide and a sub-micron filler. The polyimide is derived from at least one aromatic dianhydride component selected from rigid rod dianhydride, non-rigid rod dianhydride and combinations thereof, and at least one aromatic diamine component selected from rigid rod diamine, non-rigid rod diamine and combinations thereof. The mole ratio of dianhydride to diamine is 48-52:52-48 and the ratio of X:Y is 20-80:80-20 where X is the mole percent of rigid rod dianhydride and rigid rod diamine, and Y is the mole percent of non-rigid rod dianhydride and non-rigid rod diamine. The sub-micron filler is less than 550 nanometers in at least one dimension; has an aspect ratio greater than 3:1; is less than the thickness of the film in all dimensions.
摘要:
The assemblies of the present disclosure comprise an electrode, and a polyimide film. The polyimide film comprises a sub-micron filler and a polyimide. The polyimide is derived from at least one aromatic dianhydride component selected from rigid rod dianhydride, non-rigid rod dianhydride and combinations thereof, and at least one aromatic diamine component selected from rigid rod diamine, non-rigid rod diamine and combinations thereof. The mole ratio of dianhydride to diamine is 48-52:52-48 and the ratio of X:Y is 20-80:80-20 where X is the mole percent of rigid rod dianhydride and rigid rod diamine, and Y is the mole percent of non-rigid rod dianhydride and non-rigid rod diamine. The sub-micron filler is less than 550 nanometers in at least one dimension; has an aspect ratio greater than 3:1; is less than the thickness of the film in all dimensions.
摘要:
The present disclosure is directed to a thin film transistor composition. The thin film transistor composition has a semiconductor material and a substrate. The substrate is composed of a polyimide and a sub-micron filler. The polyimide is derived from at least one aromatic dianhydride component selected from rigid rod dianhydride, non-rigid rod dianhydride and combinations thereof, and at least one aromatic diamine component selected from rigid rod diamine, non-rigid rod diamine and combinations thereof. The mole ratio of dianhydride to diamine is 48-52:52-48 and the ratio of X:Y is 20-80:80-20 where X is the mole percent of rigid rod dianhydride and rigid rod diamine, and Y is the mole percent of non-rigid rod dianhydride and non-rigid rod diamine. The sub-micron filler is less than 550 nanometers in at least one dimension; has an aspect ratio greater than 3:1; is less than the thickness of the film in all dimensions.
摘要:
The present disclosure is directed to a thin film transistor composition. The thin film transistor composition has a semiconductor material and a substrate. The substrate is composed of a polyimide and a sub-micron filler. The polyimide is derived from at least one aromatic dianhydride component selected from rigid rod dianhydride, non-rigid rod dianhydride and combinations thereof, and at least one aromatic diamine component selected from rigid rod diamine, non-rigid rod diamine and combinations thereof. The mole ratio of dianhydride to diamine is 48-52:52-48 and the ratio of X:Y is 20-80:80-20 where X is the mole percent of rigid rod dianhydride and rigid rod diamine, and Y is the mole percent of non-rigid rod dianhydride and non-rigid rod diamine. The sub-micron filler is less than 550 nanometers in at least one dimension; has an aspect ratio greater than 3:1; is less than the thickness of the film in all dimensions.
摘要:
An interposer film for IC packaging is disclosed. The interposer film comprises a substrate that supports a plurality of electrically conductive domains. The substrate is composed of a polyimide and a sub-micron filler. The polyimide is derived from at least one aromatic dianhydride component selected from rigid rod dianhydride, non-rigid rod dianhydride and combinations thereof, and at least one aromatic diamine component selected from rigid rod diamine, non-rigid rod diamine and combinations thereof. The mole ratio of dianhydride to diamine is 48-52:52-48 and the ratio of X:Y is 20-80:80-20 where X is the mole percent of rigid rod dianhydride and rigid rod diamine, and Y is the mole percent of non-rigid rod dianhydride and non-rigid rod diamine. The sub-micron filler is less than 550 nanometers in at least one dimension; has an aspect ratio greater than 3:1; is less than the thickness of the film in all dimensions.
摘要:
The present disclosure is directed to a wire wrap composition having a polyimide layer and a bonding layer. The polyimide layer is composed of a polyimide and a sub-micron filler. The polyimide is derived from at least one aromatic dianhydride component selected from rigid rod dianhydride, non-rigid rod dianhydride and combinations thereof, and at least one aromatic diamine component selected from rigid rod diamine, non-rigid rod diamine and combinations thereof. The mole ratio of dianhydride to diamine is 48-52:52-48 and the ratio of X:Y is 20-80:80-20 where X is the mole percent of rigid rod dianhydride and rigid rod diamine, and Y is the mole percent of non-rigid rod dianhydride and non-rigid rod diamine. The sub-micron filler is less than 550 nanometers in at least one dimension; has an aspect ratio greater than 3:1; is less than the thickness of the film in all dimensions.