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    METHODS OF MAKING PHOTOVOLTAIC DEVICES AND PHOTOVOLTAIC DEVICES
    5.
    发明申请
    METHODS OF MAKING PHOTOVOLTAIC DEVICES AND PHOTOVOLTAIC DEVICES 有权
    制造光伏器件和光电器件的方法

    公开(公告)号：US20120325298A1

    公开(公告)日：2012-12-27

    申请号：US13165298

    申请日：2011-06-21

    申请人： James Neil Johnson ,  Bastiaan Arie Korevaar ,  Yu Zhao

    发明人： James Neil Johnson ,  Bastiaan Arie Korevaar ,  Yu Zhao

    IPC分类号： H01L31/06 ,  H01L31/18

    CPC分类号： C23C14/0629 ,  C23C14/548 ,  C23C18/1204 ,  C23C18/1279 ,  C23C18/1291 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/0749 ,  H01L31/1828 ,  H01L31/1832 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

    摘要： One aspect of the present invention includes method of making a photovoltaic device. The method includes disposing an absorber layer on a window layer, wherein the absorber layer includes a first region and a second region. The method includes disposing the first region adjacent to the window layer in a first environment including oxygen at a first partial pressure; and disposing the second region on the first region in a second environment including oxygen at a second partial pressure, wherein the first partial pressure is greater than the second partial pressure. One aspect of the present invention includes a photovoltaic device.

    摘要翻译： 本发明的一个方面包括制造光伏器件的方法。 该方法包括在窗口层上设置吸收层，其中吸收层包括第一区域和第二区域。 该方法包括将第一区域与窗口层相邻置于包含第一分压的氧的第一环境中; 以及在包括第二分压的氧的第二环境中将所述第二区域设置在所述第一区域上，其中所述第一分压大于所述第二分压。 本发明的一个方面包括光伏器件。

    PHOTOVOLTAIC DEVICES AND METHOD OF MAKING
    6.
    发明申请
    PHOTOVOLTAIC DEVICES AND METHOD OF MAKING 有权
    光伏器件及其制造方法

    公开(公告)号：US20120305064A1

    公开(公告)日：2012-12-06

    申请号：US13150485

    申请日：2011-06-01

    申请人： James Neil Johnson ,  Bastiaan Arie Korevaar ,  Timothy John Sommerer

    发明人： James Neil Johnson ,  Bastiaan Arie Korevaar ,  Timothy John Sommerer

    IPC分类号： H01L31/0256 ,  H01L31/18 ,  H01L31/0248

    CPC分类号： H01L31/02963 ,  H01L31/0272 ,  H01L31/02725 ,  H01L31/0296 ,  H01L31/0352 ,  H01L31/073 ,  Y02E10/543

    摘要： In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a window layer and an absorber layer disposed on the window layer, wherein the absorber layer includes a first region and a second region, the first region disposed adjacent to the window layer. The absorber layer further includes a first additive and a second additive, wherein a concentration of the first additive in the first region is greater than a concentration of the first additive in the second region, and wherein a concentration of the second additive in the second region is greater than a concentration of the second additive in the first region. Method of making a photovoltaic device is also provided.

    摘要翻译： 在本发明的一个方面，提供一种光电器件。 光伏器件包括窗口层和设置在窗口层上的吸收层，其中吸收层包括第一区域和第二区域，第一区域邻近窗口层设置。 吸收层还包括第一添加剂和第二添加剂，其中第一区域中的第一添加剂的浓度大于第二区域中第一添加剂的浓度，并且其中第二添加剂在第二区域中的浓度 大于第一区域中的第二添加剂的浓度。 还提供了制造光伏器件的方法。

    Method and Apparatus For A Semiconductor Structure Forming At Least One Via
    7.
    发明申请
    Method and Apparatus For A Semiconductor Structure Forming At Least One Via 审中-公开
    一种形成半导体结构的方法和装置

    公开(公告)号：US20080174028A1

    公开(公告)日：2008-07-24

    申请号：US11626036

    申请日：2007-01-23

    申请人： Bastiaan Arie Korevaar ,  James Neil Johnson

    发明人： Bastiaan Arie Korevaar ,  James Neil Johnson

    IPC分类号： H01L29/00 ,  B05D5/12

    CPC分类号： H01L31/022425 ,  H01L31/022433 ,  Y02E10/50

    摘要： One exemplary embodiment of a semiconductor structure can include: (a) a semiconductor substrate of one conductivity type, having a front surface and a back surface and including at least one via through the semiconductor substrate, where the at least one via is filled with a conductive material; and (b) a semiconductor layer disposed on at least a portion of the front or back surface of the semiconductor substrate, where the semiconductor layer is compositionally graded through its depth with one or more selected dopants, and the conductive material is configured to electrically couple the semiconductor layer to at least one front contact disposed on or over the surface of the substrate.

    摘要翻译： 半导体结构的一个示例性实施例可以包括：（a）一种导电类型的半导体衬底，具有前表面和后表面，并且包括穿过半导体衬底的至少一个通孔，其中至少一个通孔填充有 导电材料; 和（b）设置在半导体衬底的前表面或后表面的至少一部分上的半导体层，其中半导体层通过其一个或多个所选掺杂剂在其深度上被成分地分级，并且导电材料被配置为电耦合 所述半导体层至少设置在所述基板的表面上或上方的前端触点。

    Systems and methods of intermixing cadmium sulfide layers and cadmium telluride layers for thin film photovoltaic devices
    9.
    发明授权
    Systems and methods of intermixing cadmium sulfide layers and cadmium telluride layers for thin film photovoltaic devices 有权
    用于薄膜光伏器件混合硫化镉层和碲化镉层的系统和方法

    公开(公告)号：US07939363B1

    公开(公告)日：2011-05-10

    申请号：US12913296

    申请日：2010-10-27

    申请人： James Neil Johnson ,  Bastiaan Arie Korevaar ,  Yu Zhao

    发明人： James Neil Johnson ,  Bastiaan Arie Korevaar ,  Yu Zhao

    IPC分类号： H01L21/00

    CPC分类号： C23C14/0629 ,  C03C17/347 ,  C03C17/3476 ,  C03C17/3678 ,  C03C2217/91 ,  C23C14/24 ,  C23C14/56 ,  H01L21/02439 ,  H01L21/02557 ,  H01L21/02562 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/073 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

    摘要： A process for manufacturing a cadmium telluride based thin film photovoltaic device having an intermixed layer is provided. The process can include introducing a substrate into a deposition chamber, wherein a window layer (e.g., a cadmium sulfide layer) is on a surface of the substrate. A sulfur-containing gas can be supplied to the deposition chamber. In addition, a source vapor can be supplied to the deposition chamber, wherein the source material comprises cadmium telluride. The sulfur-containing gas and the source vapor can be present within the deposition chamber to form an intermixed layer on the window layer. In one particular embodiment, for example, the intermixed layer generally can have an increasing tellurium concentration and decreasing sulfur concentration extending away from the window layer.An apparatus for sequential deposition of an intermixed thin film layer and a sublimated source material on a photovoltaic (PV) module substrate is also provided.

    摘要翻译： 提供了具有混合层的碲化镉基薄膜光伏器件的制造方法。 该方法可以包括将衬底引入沉积室，其中窗口层（例如，硫化镉层）在衬底的表面上。 可以向沉积室供应含硫气体。 此外，源蒸气可以供应到沉积室，其中源材料包括碲化镉。 含硫气体和源蒸气可以存在于沉积室内以在窗口层上形成混合层。 在一个具体实施方案中，例如，混合层通常可以具有增加的碲浓度和降低远离窗口层的硫浓度。 还提供了用于在光伏（PV）模块基板上顺序沉积混合薄膜层和升华的源材料的装置。