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公开(公告)号：US08449293B2
公开(公告)日：2013-05-28
申请号：US12771233
申请日：2010-04-30
CPC分类号： G03F7/09 , G03F7/0392 , G03F7/0751 , G03F7/092 , G03F7/095 , G03F7/11 , G03F7/165 , G03F7/2004
摘要： A method for patterning a substrate with extreme ultraviolet (EUV) radiation is provided. The method includes contacting a surface of the substrate with at least one surface modification agent that reacts with and bonds to the surface 402 of the substrate 401 to provide a modified surface. A layer of photoresist is formed on the modified surface, followed by exposing the layer of photoresist to a pattern of EUV radiation. The surface modification agent has a general formula: X-L-Z, where X is a leaving group; L is a linkage group including a substituted or un-substituted carbon chain having 1 to 20 carbons, a sulfur moiety, a silicon moiety, or combinations thereof; and Z is at least one of an acid functional group, a photoactive acid generator group or a halide.
摘要翻译： 提供了一种用极紫外（EUV）辐射图案化衬底的方法。 该方法包括使基材的表面与至少一种表面改性剂接触，所述表面改性剂与基材401的表面402反应并结合到基材401的表面402以提供改性表面。 在改性表面上形成一层光致抗蚀剂，随后将该光致抗蚀剂层暴露于EUV辐射图案。 表面改性剂具有以下通式：X-L-Z，其中X为离去基团; L是包含具有1至20个碳的取代或未取代的碳链，硫部分，硅部分或其组合的连接基团; Z是酸官能团，光活性酸发生剂组或卤化物中的至少一种。
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公开(公告)号：US20110269078A1
公开(公告)日：2011-11-03
申请号：US12771233
申请日：2010-04-30
IPC分类号： G03F7/20
CPC分类号： G03F7/09 , G03F7/0392 , G03F7/0751 , G03F7/092 , G03F7/095 , G03F7/11 , G03F7/165 , G03F7/2004
摘要： A method for patterning a substrate with extreme ultraviolet (EUV) radiation is provided. The method includes contacting a surface of the substrate with at least one surface modification agent that reacts with and bonds to the surface 402 of the substrate 401 to provide a modified surface. A layer of photoresist is formed on the modified surface, followed by exposing the layer of photoresist to a pattern of EUV radiation. The surface modification agent has a general formula: X-L-Z, where X is a leaving group; L is a linkage group including a substituted or un-substituted carbon chain having 1 to 20 carbons, a sulfur moiety, a silicon moiety, or combinations thereof; and Z is at least one of an acid functional group, a photoactive acid generator group or a halide.
摘要翻译： 提供了一种用极紫外（EUV）辐射图案化衬底的方法。 该方法包括使基材的表面与至少一种表面改性剂接触，所述表面改性剂与基材401的表面402反应并结合到基材401的表面402以提供改性表面。 在改性表面上形成一层光致抗蚀剂，随后将该光致抗蚀剂层暴露于EUV辐射图案。 表面改性剂具有以下通式：X-L-Z，其中X为离去基团; L是包含具有1至20个碳的取代或未取代的碳链，硫部分，硅部分或其组合的连接基团; Z是酸官能团，光活性酸发生剂组或卤化物中的至少一种。
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3.发明申请METHOD OF SLIMMING RADIATION-SENSITIVE MATERIAL LINES IN LITHOGRAPHIC APPLICATIONS 有权在光刻应用中消除辐射敏感材料线的方法公开(公告)号：US20110244402A1
公开(公告)日：2011-10-06
申请号：US12751362
申请日：2010-03-31
CPC分类号： G03F7/26 , G03F7/2024 , G03F7/40 , H01L21/67207
摘要： A method and system for patterning a substrate using a radiation-sensitive material is described. The method and system include forming a layer of radiation-sensitive material on a substrate, exposing the layer of radiation-sensitive material to a pattern of radiation, and then performing a post-exposure bake following the exposing. The imaged layer of radiation-sensitive material is then positive-tone developed to remove a region having high radiation exposure to form radiation-sensitive material lines. An exposure gradient within the radiation-sensitive material lines is then removed, followed by slimming the radiation-sensitive material lines.
摘要翻译： 描述了使用辐射敏感材料构图衬底的方法和系统。 该方法和系统包括在衬底上形成辐射敏感材料层，将辐射敏感材料层暴露于辐射图案，然后在曝光之后进行曝光后烘烤。 然后对成像的辐射敏感材料层进行正音发展，以去除具有高辐射曝光的区域以形成辐射敏感材料线。 然后去除辐射敏感材料线内的曝光梯度，然后减少辐射敏感材料线。
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4.发明申请METHOD OF SLIMMING RADIATION-SENSITIVE MATERIAL LINES IN LITHOGRAPHIC APPLICATIONS 有权在光刻应用中消除辐射敏感材料线的方法公开(公告)号：US20110244403A1
公开(公告)日：2011-10-06
申请号：US13077833
申请日：2011-03-31
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , G03F7/2024 , G03F7/32 , H01L21/0273 , H01L21/0274 , H01L21/67207
摘要： A method and system for patterning a substrate using a radiation-sensitive material is described. The method and system include forming a layer of radiation-sensitive material on a substrate, exposing the layer of radiation-sensitive material to a pattern of radiation, and then performing a post-exposure bake following the exposing. The imaged layer of radiation-sensitive material is then developed to remove either a region having high radiation exposure or a region having low radiation exposure to form radiation-sensitive material lines. An exposure gradient within the radiation-sensitive material lines is then removed, followed by slimming the radiation-sensitive material lines.
摘要翻译： 描述了使用辐射敏感材料构图衬底的方法和系统。 该方法和系统包括在衬底上形成辐射敏感材料层，将辐射敏感材料层暴露于辐射图案，然后在曝光之后进行曝光后烘烤。 然后显影成像的辐射敏感材料层以除去具有高辐射照射的区域或具有低辐射照射的区域以形成辐射敏感材料线。 然后去除辐射敏感材料线内的曝光梯度，然后减少辐射敏感材料线。
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5.发明授权Method of slimming radiation-sensitive material lines in lithographic applications 有权在光刻应用中减少辐射敏感材料线的方法公开(公告)号：US08435728B2
公开(公告)日：2013-05-07
申请号：US13077833
申请日：2011-03-31
IPC分类号： G03F7/26
CPC分类号： G03F7/40 , G03F7/2024 , G03F7/32 , H01L21/0273 , H01L21/0274 , H01L21/67207
摘要： A method and system for patterning a substrate using a radiation-sensitive material is described. The method and system include forming a layer of radiation-sensitive material on a substrate, exposing the layer of radiation-sensitive material to a pattern of radiation, and then performing a post-exposure bake following the exposing. The imaged layer of radiation-sensitive material is then developed to remove either a region having high radiation exposure or a region having low radiation exposure to form radiation-sensitive material lines. An exposure gradient within the radiation-sensitive material lines is then removed, followed by slimming the radiation-sensitive material lines.
摘要翻译： 描述了使用辐射敏感材料构图衬底的方法和系统。 该方法和系统包括在衬底上形成辐射敏感材料层，将辐射敏感材料层暴露于辐射图案，然后在曝光之后进行曝光后烘烤。 然后显影成像的辐射敏感材料层以除去具有高辐射照射的区域或具有低辐射照射的区域以形成辐射敏感材料线。 然后去除辐射敏感材料线内的曝光梯度，然后减少辐射敏感材料线。
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6.发明授权Method of slimming radiation-sensitive material lines in lithographic applications 有权在光刻应用中减少辐射敏感材料线的方法公开(公告)号：US08338086B2
公开(公告)日：2012-12-25
申请号：US12751362
申请日：2010-03-31
IPC分类号： G03F7/20
CPC分类号： G03F7/26 , G03F7/2024 , G03F7/40 , H01L21/67207
摘要： A method and system for patterning a substrate using a radiation-sensitive material is described. The method and system include forming a layer of radiation-sensitive material on a substrate, exposing the layer of radiation-sensitive material to a pattern of radiation, and then performing a post-exposure bake following the exposing. The imaged layer of radiation-sensitive material is then positive-tone developed to remove a region having high radiation exposure to form radiation-sensitive material lines. An exposure gradient within the radiation-sensitive material lines is then removed, followed by slimming the radiation-sensitive material lines.
摘要翻译： 描述了使用辐射敏感材料构图衬底的方法和系统。 该方法和系统包括在衬底上形成辐射敏感材料层，将辐射敏感材料层暴露于辐射图案，然后在曝光之后进行曝光后烘烤。 然后对成像的辐射敏感材料层进行正音发展，以去除具有高辐射曝光的区域以形成辐射敏感材料线。 然后去除辐射敏感材料线内的曝光梯度，然后减少辐射敏感材料线。
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公开(公告)号：US08795952B2
公开(公告)日：2014-08-05
申请号：US13031112
申请日：2011-02-18
IPC分类号： G03F7/30
CPC分类号： G03F7/405 , G03F7/038 , G03F7/0384 , G03F7/2024 , G03F7/30 , G03F7/38 , G03F7/40
摘要： Disclosed is a method and apparatus for mitigation of photoresist line pattern collapse in a photolithography process by applying a gap-fill material treatment after the post-development line pattern rinse step. The gap-fill material dries into a solid layer filling the inter-line spaces of the line pattern, thereby preventing line pattern collapse due to capillary forces during the post-rinse line pattern drying step. Once dried, the gap-fill material is depolymerized, volatilized, and removed from the line pattern by heating, illumination with ultraviolet light, by application of a catalyst chemistry, or by plasma etching.
摘要翻译： 公开了一种用于通过在显影后图案漂洗步骤之后施加间隙填充材料处理来减轻光刻工艺中的光致抗蚀剂线图案塌陷的方法和装置。 间隙填充材料干燥成填充线图案的间隔空间的固体层，从而防止在后冲洗线图案干燥步骤期间由于毛细管力引起的线图案塌陷。 一旦干燥，间隙填充材料通过加热，用紫外线照射，通过施加催化剂化学或通过等离子体蚀刻从线图案解聚，挥发和除去。
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8.发明申请SEMICONDUCTIVE DEVICE HAVING RESIST POISON ALUMINUM OXIDE BARRIER AND METHOD OF MANUFACTURE 审中-公开具有耐蚀性的氧化铝氧化物阻挡层的半导体器件及其制造方法公开(公告)号：US20070290347A1
公开(公告)日：2007-12-20
申请号：US11425015
申请日：2006-06-19
IPC分类号： H01L21/4763
CPC分类号： H01L21/76829 , H01L21/02126 , H01L21/02178 , H01L21/022 , H01L21/02271 , H01L21/3105 , H01L21/31144 , H01L21/3141 , H01L21/3162 , H01L21/76808 , H01L21/76826 , H01L21/76832
摘要： The invention provides a semiconductive device that comprises interlevel dielectric layers that are located over devices. The interlevel dielectric layers have a dielectric constant (k) less than about 4.0. Interconnects are formed within or over the interlevel dielectric layers. The semiconductive device further comprises an aluminum oxide barrier located between at least one pair of the interlevel dielectric layers. The aluminum oxide barrier is substantially laterally co-extensive with the interlevel dielectric layers.
摘要翻译： 本发明提供一种半导体器件，其包括位于器件上方的层间电介质层。 层间电介质层的介电常数（k）小于约4.0。 互连件形成在层间电介质层内或上。 半导体器件还包括位于至少一对层间电介质层之间的氧化铝屏障。 氧化铝屏障与层间电介质层基本横向共同扩展。
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9.发明授权公开(公告)号：US07018925B2
公开(公告)日：2006-03-28
申请号：US10752885
申请日：2004-01-06
申请人： Brian K. Kirkpatrick , Rajesh Khamankar , Malcolm J. Bevan , April Gurba , Husam N. Alshareef , Clinton L. Montgomery , Mark H. Somervell
发明人： Brian K. Kirkpatrick , Rajesh Khamankar , Malcolm J. Bevan , April Gurba , Husam N. Alshareef , Clinton L. Montgomery , Mark H. Somervell
IPC分类号： H01L21/302
CPC分类号： H01L21/28202 , H01L21/02046 , H01L21/26506 , H01L21/28167 , H01L21/31105 , H01L21/31111 , H01L21/31144 , H01L21/3185 , H01L21/823462 , H01L29/518
摘要： The present invention provides a method for fabricating a dual gate semiconductor device. In one aspect, the method comprises forming a nitridated, high voltage gate dielectric layer over a semiconductor substrate, patterning a photoresist over the nitridated, high voltage gate dielectric layer to expose the nitridated, high voltage dielectric within a low voltage region, wherein the patterning leaves an accelerant residue on the exposed nitridated, high voltage gate dielectric layer, and subjecting the exposed nitridated, high voltage dielectric to a high vacuum to remove the accelerant residue.
摘要翻译： 本发明提供一种制造双栅极半导体器件的方法。 在一个方面，该方法包括在半导体衬底上形成氮化的高电压栅极电介质层，在氮化的高压栅极电介质层上形成光致抗蚀剂，以在低电压区域内露出氮化的高电压电介质，其中图案化 在暴露的氮化高压栅极电介质层上留下促进剂残留物，并将暴露的氮化高压电介质施加到高真空以除去促进剂残余物。
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公开(公告)号：US08129089B2
公开(公告)日：2012-03-06
申请号：US12652870
申请日：2010-01-06
CPC分类号： G03F7/168
摘要： The present invention provides a blended solvent for solubilizing an ultraviolet photoresist. The blended solvent comprises a mixture of from about 5 vol % to about 95 vol % of a first solvent, wherein the first solvent comprises a cyclic ester. A balance of the mixture comprises a second solvent, wherein the second solvent comprises a volatile organic liquid.
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