利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

119 条记录 (耗时 0.018 秒)

    PHOTOVOLTAIC DEVICE
    4.
    发明申请
    PHOTOVOLTAIC DEVICE 审中-公开
    光电器件

    公开(公告)号：US20120060891A1

    公开(公告)日：2012-03-15

    申请号：US13209753

    申请日：2011-08-15

    申请人： Benyamin Buller ,  Douglas Dauson ,  Chungho Lee ,  Scott Mills ,  Dale Roberts ,  Rui Shao ,  Zhibo Zhao ,  Keith Burrows ,  Annette Krisko

    发明人： Benyamin Buller ,  Douglas Dauson ,  Chungho Lee ,  Scott Mills ,  Dale Roberts ,  Rui Shao ,  Zhibo Zhao ,  Keith Burrows ,  Annette Krisko

    IPC分类号： H01L31/0224 ,  H01L31/042 ,  H01L31/18

    CPC分类号： H01L31/03925 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/073 ,  H01L31/1836 ,  Y02E10/543 ,  Y02P70/521

    摘要： A multilayered structure including a first barrier layer adjacent to a substrate, a barrier bi-layer adjacent to the first barrier layer, the barrier bi-layer comprising a second barrier layer and a third barrier layer, a transparent conductive oxide layer adjacent to the barrier bi-layer, and a buffer layer adjacent to the transparent conductive oxide layer and method of forming the same. A multilayered substrate including a barrier layer structure having a plurality of barrier layers being alternating layers of low refractive index material and high refractive index material, a transparent conductive oxide layer adjacent to the barrier bi-layer and a buffer layer adjacent to the transparent conductive oxide layer. The multilayered structure may serve as a front contact for photovoltaic devices.

    摘要翻译： 包括与衬底相邻的第一阻挡层，与第一阻挡层相邻的势垒双层的多层结构，包含第二阻挡层和第三势垒层的阻挡双层，与阻挡层相邻的透明导电氧化物层 双层和与透明导电氧化物层相邻的缓冲层及其形成方法。 一种多层基板，包括具有多个阻挡层的阻挡层结构，所述阻挡层是低折射率材料和高折射率材料的交替层，与所述阻挡双层相邻的透明导电氧化物层和与所述透明导电氧化物相邻的缓冲层 层。 多层结构可以用作光伏器件的前触点。

    PHOTOVOLTAIC DEVICE WITH A METAL SULFIDE OXIDE WINDOW LAYER
    5.
    发明申请
    PHOTOVOLTAIC DEVICE WITH A METAL SULFIDE OXIDE WINDOW LAYER 审中-公开
    具有金属硫化物窗户层的光伏器件

    公开(公告)号：US20120067422A1

    公开(公告)日：2012-03-22

    申请号：US13240101

    申请日：2011-09-22

    申请人： Rui Shao ,  Markus Gloeckler ,  Benyamin Buller

    发明人： Rui Shao ,  Markus Gloeckler ,  Benyamin Buller

    IPC分类号： H01L31/0296 ,  H01L31/0272 ,  H01L31/0336 ,  H01L31/18

    CPC分类号： H01L31/02966 ,  H01L31/0324 ,  H01L31/072 ,  H01L31/073 ,  H01L31/074 ,  H01L31/0749 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

    摘要： Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a MS 1-xOx window layer formed over the substrate structure, wherein M is an element from the group consisting of Zn, Sn, and In. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a MS 1-xOx window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process, wherein M is an element from the group consisting of Zn, Sn, and In.

    摘要翻译： 描述了用于光伏器件和衬底结构的方法和器件。 在一个实施例中，光伏器件包括衬底结构和在衬底结构上形成的MS 1-xO x窗口层，其中M是来自由Zn，Sn和In组成的组的元素。 另一个实施方案涉及一种用于制造光伏器件的方法，包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气迁移沉积工艺中的至少一种在衬底上形成MS 1-xO x窗口层，其中M为 元素由Zn，Sn和In组成。