摘要:
A lead frame for reducing detrimental effects of burr formation includes a lead frame that has leads where a portion of a top surface is removed from a first lead and a portion of a bottom surface is removed from a second lead adjacent to the first lead to reduce spacing between leads while reducing the detrimental effects of burr formation, such as shorting and the like, caused during singulation of a semiconductor device manufactured with the lead frame.
摘要:
A method for assembling a semiconductor package includes a rapid cooling step after post mold curing of an encapsulation material. The rapid cooling step includes blowing chilled, compressed air over the package for about two minutes. The rapid cooling step does not require any clamping pressure be simultaneously applied to the package. The rapid cooling step reduces a temperature of the encapsulation material from a curing temperature to the cooled temperature within a maximum period of less than five minutes. By using rapid cooling, as opposed to cooling the package under a clamping pressure with ambient air, package warpage due to CTE mismatches is prevented.
摘要:
A lead frame for reducing detrimental effects of burr formation includes a lead frame that has leads where a portion of a top surface is removed from a first lead and a portion of a bottom surface is removed from a second lead adjacent to the first lead to reduce spacing between leads while reducing the detrimental effects of burr formation, such as shorting and the like, caused during singulation of a semiconductor device manufactured with the lead frame.
摘要:
A method for assembling a semiconductor package includes a rapid cooling step after post mold curing of an encapsulation material. The rapid cooling step includes blowing chilled, compressed air over the package for about two minutes. The rapid cooling step does not require any clamping pressure be simultaneously applied to the package. The rapid cooling step reduces a temperature of the encapsulation material from a curing temperature to the cooled temperature within a maximum period of less than five minutes. By using rapid cooling, as opposed to cooling the package under a clamping pressure with ambient air, package warpage due to CTE mismatches is prevented.
摘要:
A Quad Flat Non-leaded (QFN) semiconductor die package has a semiconductor die mounted on a die flag of a lead frame. A covers the semiconductor die. The housing has a base and sides. There are electrically conductive mounting feet, each of which has an exposed base portion in the base of the housing and an exposed side portion in the one of the sides of the housing. Bond wires electrically connect electrodes of the semiconductor die to respective ones of the mounting feet.
摘要:
A method of assembling semiconductor devices includes placing an array of semiconductor dies on a die support. A cap array structure is provided that has a corresponding array of caps supported by a cap frame structure. The cap array structure and the array of semiconductor dies on the die support are aligned, with the caps extending over corresponding semiconductor dies, in a mold chase. The array of semiconductor dies and the array of caps are encapsulated with a molding compound in the mold chase. The encapsulated units of the semiconductor dies with the corresponding caps are removed from the mold chase and singulated. Singulating the encapsulated units may include removing the cap frame structure from the encapsulated units.
摘要:
A semiconductor device has first and semiconductor dies having active faces presenting electrical contact elements and back faces attached to first and second bonding areas side by side on an electrically conductive die support. A layer of electrically insulating material is applied to the first bonding area of the die support. A layer of electrically insulating adhesive bonding material attaches the back face of the first semiconductor die to the first bonding area of the die support through the layer of electrically insulating material. A layer of electrically conductive adhesive bonding material attaches the back face of the second semiconductor die to the second bonding area of the die support.
摘要:
In a method of packaging a semiconductor IC, a tape is attached to a back surface of a lead frame array, and the lead frame array is held between an upper mold chase and a lower mold chase of a mold, with the back surface of the lead frame array upward. The upper and lower mold chases form an upper cavity and a lower cavity with respect to the lead frame array respectively. A mold compound is injected into the upper and lower cavities respectively. With respect to clearances between leads, between die pads and/or between the leads and the die pads, the mold compound injected into the upper cavity covers the portion of the tape over the clearances before the mold compound injected into the lower cavity fills the clearances, so that the tape is depressed. After curing the mold compound, removing the mold and de-taping, the mold compound filled in the clearances is recessed inward from the back surface, which increases the solderability in the subsequent surface mount process and decreases the possibility of the occurrence of lead short-circuits.
摘要:
A process for assembling a Chip-On-Lead packaged semiconductor device includes the steps of: mounting and sawing a wafer to provide individual semiconductor dies; performing a first molding operation on a lead frame; depositing epoxy on the lead frame via a screen printing process; attaching one of the singulated dies on the lead frame with the epoxy, where the die attach is done at room temperature; and curing the epoxy in an oven. Throughput improvements may be ascribed to not including a hot die attach process. An optional plasma cleaning step may be performed, which greatly improves wire bonding quality and a second molding quality. In addition, since a first molding operation is performed before the formation of epoxy to avoid the problem of the epoxy hanging in the air, the delamination risk between the epoxy and the die is avoided.
摘要:
Metamaterial antennas provide spatially varying electromagnetic coupling that enables impedance matching conditions for different operating frequencies of the MTM antennas so that such antennas can operate at different frequencies for wideband applications, including ultra wideband applications.