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83 条记录 (耗时 0.043 秒)

    Method for controlled application of reactive vapors to produce thin films and coatings
    6.
    发明授权
    Method for controlled application of reactive vapors to produce thin films and coatings 有权
    用于控制应用反应蒸气以产生薄膜和涂层的方法

    公开(公告)号：US07413774B2

    公开(公告)日：2008-08-19

    申请号：US11018173

    申请日：2004-12-21

    申请人： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

    发明人： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

    IPC分类号： C23C16/00

    CPC分类号： B82Y30/00 ,  B05D1/185 ,  B05D1/60 ,  B05D3/142 ,  B82Y40/00 ,  C09D4/00 ,  C23C16/4485 ,  C08G77/04

    摘要： A vapor phase deposition method and apparatus for the application of thin layers and coatings on substrates. The method and apparatus are useful in the fabrication of electronic devices, micro-electromechanical systems (MEMS), Bio-MEMS devices, micro and nano imprinting lithography, and microfluidic devices. The apparatus used to carry out the method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. The apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the coating formation process. The precise addition of each of the reactants in vapor form is metered into a predetermined set volume at a specified temperature to a specified pressure, to provide a highly accurate amount of reactant.

    摘要翻译： 一种用于在基底上施加薄层和涂层的气相沉积方法和装置。 该方法和装置可用于制造电子设备，微机电系统（MEMS），生物MEMS装置，微型和纳米压印光刻以及微流体装置。 用于实施该方法的装置提供了在涂层形成过程的单个反应步骤中添加精确量的每种待消耗的反应物。 该装置提供在单一步骤期间或当涂层形成过程中存在许多不同的单独步骤时精确添加量的不同组合的反应物。 将蒸气形式的每种反应物的精确加入在指定温度下计量到预定设定体积至指定压力，以提供高精度的反应物。

    Protective thin films for use during fabrication of semiconductors, MEMS, and microstructures
    7.
    发明申请
    Protective thin films for use during fabrication of semiconductors, MEMS, and microstructures 有权
    用于制造半导体，MEMS和微结构的保护薄膜

    公开(公告)号：US20070281492A1

    公开(公告)日：2007-12-06

    申请号：US11447186

    申请日：2006-06-05

    申请人： Jeffrey D. Chinn ,  Boris Kobrin ,  Romuald Nowak

    发明人： Jeffrey D. Chinn ,  Boris Kobrin ,  Romuald Nowak

    IPC分类号： H01L21/47

    CPC分类号： H01L21/02126 ,  B81C1/00896 ,  B81C2201/053 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02263 ,  H01L21/3121

    摘要： A method of protecting a substrate during fabrication of semiconductor, MEMS, or biotechnology devices. The method includes application of a protective thin film which typically has a thickness ranging from about 3 Å to about 1,000 Å, wherein precursor materials used to deposit the protective thin film are organic-based precursors which include at least one fluorine-comprising functional group at one end of a carbon back bone and at least one functional bonding group at the opposite end of a carbon backbone, and wherein the carbon backbone ranges in length from 4 carbons through about 12 carbons. In many applications at least a portion of the protective thin film is removed during fabrication of the devices.

    摘要翻译： 一种在制造半导体，MEMS或生物技术设备期间保护衬底的方法。 该方法包括施加通常具有约3至约1000的厚度的保护性薄膜，其中用于沉积保护性薄膜的前体材料是有机基前体，其包括至少一个含氟官能团 碳骨架的一端和在碳骨架的相对端处的至少一个功能键合基团，其中碳骨架的长度为4个碳到约12个碳原子。 在许多应用中，在制造器件期间，保护薄膜的至少一部分被去除。

    Controlled deposition of silicon-containing coatings adhered by an oxide layer
    9.
    发明授权
    Controlled deposition of silicon-containing coatings adhered by an oxide layer 有权
    由氧化物层附着的含硅涂层的控制沉积

    公开(公告)号：US08178162B2

    公开(公告)日：2012-05-15

    申请号：US12592183

    申请日：2009-11-19

    申请人： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

    发明人： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

    IPC分类号： C23C16/00

    CPC分类号： B82Y30/00 ,  C23C16/0227 ,  C23C16/402

    摘要： We have developed an improved vapor-phase deposition method and apparatus for the application of films/coatings on substrates. The method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. In addition to the control over the amount of reactants added to the process chamber, the present invention requires precise control over the total pressure (which is less than atmospheric pressure) in the process chamber, the partial vapor pressure of each vaporous component present in the process chamber, the substrate temperature, and typically the temperature of a major processing surface within said process chamber. Control over this combination of variables determines a number of the characteristics of a film/coating or multi-layered film/coating formed using the method. By varying these process parameters, the roughness and the thickness of the films/coatings produced can be controlled.

    摘要翻译： 我们已经开发了一种改进的气相沉积方法和装置，用于在基底上施加膜/涂层。 该方法提供在涂层形成过程的单个反应步骤中添加精确量的每种待消耗的反应物。 除了控制添加到处理室中的反应物的量之外，本发明需要精确控制处理室中的总压力（其小于大气压），存在于处理室中的每种气态组分的部分蒸气压 处理室，衬底温度以及典型地在所述处理室内的主处理表面的温度。 对这种变量组合的控制决定了使用该方法形成的膜/涂层或多层膜/涂层的许多特性。 通过改变这些工艺参数，可以控制所生产的膜/涂层的粗糙度和厚度。