公开(公告)号：US06511706B1

公开(公告)日：2003-01-28

申请号：US09441694

申请日：1999-11-16

申请人： Bryan C. Hendrix ,  Thomas H. Baum ,  Debra A. Desrochers-Christos ,  Jeffrey F. Roeder ,  Witold Paw

发明人： Bryan C. Hendrix ,  Thomas H. Baum ,  Debra A. Desrochers-Christos ,  Jeffrey F. Roeder ,  Witold Paw

IPC分类号： C23C1640

CPC分类号： G02B6/02 ,  C07F9/94 ,  C23C16/18 ,  C23C16/40 ,  C23C16/408 ,  C23C16/409 ,  C23C16/4481 ,  C23C16/4483 ,  C23C16/45561 ,  H01L39/2441

摘要： A precursor composition useful for liquid delivery MOCVD, including SBT precursors dissolved in a solvent system containing tetrahydrofuran. The associated liquid delivery MOCVD process may be carried out with vaporization of the precursor composition on a porous vaporization element having an average pore diameter in the range of from about 50 to about 200 micrometers, with the resultant precursor vapor being admixed with a carrier gas to achieve high efficiency formation of SBT films.

摘要翻译： 用于液体输送MOCVD的前体组合物，包括溶解在含有四氢呋喃的溶剂体系中的SBT前体。 相关的液体输送MOCVD方法可以通过前体组合物在平均孔径在约50至约200微米范围内的多孔蒸发元件上蒸发来进行，所得前体蒸气与载气混合， 实现SBT膜的高效率形成。

公开(公告)号：US06623656B2

公开(公告)日：2003-09-23

申请号：US09793023

申请日：2001-02-26

申请人： Thomas H. Baum ,  Chongying Xu ,  Witold Paw ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Ziyun Wang

发明人： Thomas H. Baum ,  Chongying Xu ,  Witold Paw ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Ziyun Wang

IPC分类号： C23C1640

CPC分类号： C09D1/00 ,  C07F7/003 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/409

摘要： Chemical vapor deposition (CVD) precursor compositions for forming Zr/Hf doped gate dielectric, ferroelectric, or high dielectric constant (k) metal oxide thin films. The precursor composition in one embodiment comprises a metal precursor having a general formula M(&bgr;-diketonate)2(OR)2, wherein M is Zr or Hf, and R is t-butyl. The precursor composition may also comprise a solvent medium selected from the group consisting of ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers, and compatible combinations of two or more of the foregoing.

公开(公告)号：US06399208B1

公开(公告)日：2002-06-04

申请号：US09414133

申请日：1999-10-07

申请人： Thomas H. Baum ,  Witold Paw

发明人： Thomas H. Baum ,  Witold Paw

IPC分类号： B32B900

CPC分类号： C23C16/401 ,  C09D1/00

摘要： A precursor composition for forming a zirconium and/or hafnium silicate film on a substrate, e.g., by chemical vapor deposition (CVD). Illustrative precursor compositions include (1) a first precursor metal compound or complex including a silicon alcoxide (siloxide) ligand coordinated to a metal M, wherein M=Zr or Hf and (2) a second precursor metal compound or complex including an aliphatic alcoxide ligand coordinated to a metal M, wherein M=Zr or Hf, wherein the relative proportions of the first and second precursors relative to one another are employed to controllably establish the M/Si ratio in the deposited silicate thin film. The precursor composition may contain a solvent medium, so that the composition is adapted for liquid delivery CVD, to form stable thin-film gate dielectrics for fabrication of microelectronic devices.

摘要翻译： 用于在衬底上形成锆和/或硅酸铪膜的前体组合物，例如通过化学气相沉积（CVD）。 说明性的前体组合物包括（1）第一前体金属化合物或络合物，其包含与金属M配位的硅烷醇（硅氧烷）配体，其中M = Zr或Hf，和（2）第二前体金属化合物或络合物，包括脂族醇酸配体 与金属M配位，其中M = Zr或Hf，其中第一和第二前体相对于彼此的相对比例用于可控地建立沉积的硅酸盐薄膜中的M / Si比。 前体组合物可以含有溶剂介质，使得组合物适于液体输送CVD，以形成用于制造微电子器件的稳定的薄膜栅极电介质。

公开(公告)号：US06504015B2

公开(公告)日：2003-01-07

申请号：US09791005

申请日：2001-02-22

申请人： Thomas H. Baum ,  Witold Paw

发明人： Thomas H. Baum ,  Witold Paw

IPC分类号： C07F500

CPC分类号： C07F3/003 ,  C23C16/409

摘要： Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal &bgr;-diketonate adducts of the formula M(&bgr;-diketonate)2(L)4 wherein M is the Group II metal and L is tetrahydrofuran. Such source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II thin films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.

摘要翻译： 描述了II类金属MOCVD前体组合物用于相应的含II族金属膜的MOCVD。 络合物是式M（β-二酮酸酯）2（L）4的II族金属β-二酮加成物，其中M是第II族金属，L是四氢呋喃。 钡和锶的这种源试剂络合物可用于形成钛酸锶钡和其他用于微电子器件应用的基板上的II类薄膜，例如集成电路，铁电存储器，开关，辐射检测器，薄膜电容器，微机电 结构（MEMS）和全息存储介质。

公开(公告)号：US6111122A

公开(公告)日：2000-08-29

申请号：US67557

申请日：1998-04-28

申请人： Witold Paw ,  Thomas H. Baum

发明人： Witold Paw ,  Thomas H. Baum

IPC分类号： C07F3/00 ,  C23C16/40 ,  C07F9/00 ,  C23C8/00

CPC分类号： C07F3/003 ,  C23C16/408 ,  C23C16/409

摘要： Novel Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal .beta.-diketonate Lewis base adducts having ligands such as: (i) amines bearing terminal NH.sub.2 groups; (ii) imine ligands formed as amine (i)/carbonyl reaction products; (iii) combination of two or more of the foregoing ligands (i)-(ii), and (iv) combination of one or more of the foregoing ligands (i)-(ii) with one or more other ligands or solvents. The source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II doped thin-films on substrates for microelectronic device applications, such as intearated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holoaraphic storage media.

摘要翻译： 描述了新的第II族金属MOCVD前体组合物用于相应的含II族金属膜的MOCVD。 络合物是具有配体的II族金属β-二酮基路易斯碱加成物，其具有：（i）带有末端NH 2基团的胺; （ii）以胺（i）/羰基反应产物形成的亚胺配体; （iii）上述配体（i） - （ii）中的两种或更多种的组合，和（iv）一种或多种前述配体（i） - （ii）与一种或多种其它配体或溶剂的组合。 钡和锶的源试剂络合物可用于形成钛酸钡锶和其他第II类掺杂的薄膜，用于微电子器件应用的基板上，例如有线电路，铁电存储器，开关，辐射探测器，薄膜电容器 ，微机电结构（MEMS）和全息存储介质。

公开(公告)号：US06218518B1

公开(公告)日：2001-04-17

申请号：US09321637

申请日：1999-05-28

申请人： Thomas H. Baum ,  Witold Paw

发明人： Thomas H. Baum ,  Witold Paw

IPC分类号： C07F500

CPC分类号： C07F3/003 ,  C23C16/409

摘要： Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal &bgr;-diketonate adducts of the formula M(&bgr;-diketonate)2(L)4 wherein M is the Group II metal and L is tetrahydrofuran. Such source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II thin films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.

摘要翻译： 描述了II类金属MOCVD前体组合物用于相应的含II族金属膜的MOCVD。 络合物是式M（β-二酮酸酯）2（L）4的II族金属β-二酮加成物，其中M是第II族金属，L是四氢呋喃。 钡和锶的这种源试剂络合物可用于形成钛酸锶钡和其他用于微电子器件应用的基板上的II类薄膜，例如集成电路，铁电存储器，开关，辐射检测器，薄膜电容器，微机电 结构（MEMS）和全息存储介质。

公开(公告)号：US06338873B1

公开(公告)日：2002-01-15

申请号：US09610822

申请日：2000-07-06

申请人： Witold Paw ,  Thomas H. Baum

发明人： Witold Paw ,  Thomas H. Baum

IPC分类号： C23C1600

CPC分类号： C07F3/003 ,  C23C16/408 ,  C23C16/409

摘要： Novel Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal &bgr;-diketonate Lewis base adducts having ligands such as: (i) amines bearing terminal NH2 groups; (ii) imine ligands formed as amine (i)/carbonyl reaction products; (iii) combination of two or more of the foregoing ligands (i)-(ii), and (iv) combination of one or more of the foregoing ligands (i)-(ii) with one or more other ligands or solvents. The source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II doped thin-films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.

摘要翻译： 描述了新的第II族金属MOCVD前体组合物用于相应的含II族金属膜的MOCVD。 络合物是具有配体的II族金属β-二酮酸酯路易斯碱加成物，其具有：（i）带有末端NH 2基团的胺; （ii）以胺（i）/羰基反应产物形成的亚胺配体; （iii）上述配体（i） - （ii）中的两种或更多种的组合，和（iv）一种或多种前述配体（i） - （ii）与一种或多种其它配体或溶剂的组合。 钡和锶的源试剂络合物可用于形成钛酸锶钡和其他第II类掺杂薄膜在用于微电子器件应用的衬底上，例如集成电路，铁电存储器，开关，辐射探测器，薄膜电容器 ，微机电结构（MEMS）和全息存储介质。

公开(公告)号：US08263177B2

公开(公告)日：2012-09-11

申请号：US12383650

申请日：2009-03-27

申请人： Kesheng Feng ,  Nilesh Kapadia ,  Witold Paw

发明人： Kesheng Feng ,  Nilesh Kapadia ,  Witold Paw

IPC分类号： B05D5/12 ,  H05K1/00 ,  B32B3/00

CPC分类号： C23C22/52 ,  C09D5/12 ,  C23C22/83 ,  H05K3/282 ,  H05K2203/0786 ,  H05K2203/124 ,  Y10T428/24917

摘要： A process is described for treating metal surfaces printed wiring boards and similar substrates to provide improved creep corrosion resistance on such surfaces. A modified organic solderability preservative composition is used in combination with an emulsion polymer to provide a modified polymer coating on the metal surface finish via a chemical reaction to provide enhanced corrosion protection of the surface.

摘要翻译： 描述了一种用于处理金属表面印刷线路板和类似基底的方法，以在这些表面上提供改善的耐蠕变腐蚀性。 改性有机可焊性防腐剂组合物与乳液聚合物组合使用，以通过化学反应在金属表面光洁度上提供改性聚合物涂层，以提供增强的表面腐蚀保护。

公开(公告)号：US20120061710A1

公开(公告)日：2012-03-15

申请号：US12879672

申请日：2010-09-10

申请人： Lenora M. Toscano ,  Ernest Long ,  Witold Paw ,  Donna M. Kologe ,  Katsutsugu Koyasu ,  Keisuke Nishu

发明人： Lenora M. Toscano ,  Ernest Long ,  Witold Paw ,  Donna M. Kologe ,  Katsutsugu Koyasu ,  Keisuke Nishu

IPC分类号： H01L33/62 ,  B05D5/12

CPC分类号： B23K1/203 ,  B23K1/0012 ,  B23K2101/42 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/34 ,  C23C18/36 ,  C23C18/54 ,  H01L33/60 ,  H01L2933/0025 ,  Y10T428/12896

摘要： A method for treating a metal surface to reduce corrosion thereon and/or to increase the reflectance of the treated surface, the method comprising a) plating a metal surface with an electroless nickel plating solution; and thereafter b) immersion plating silver on the electroless nickel plated surface, whereby corrosion of the metal surface is substantially prevented and/or the reflectance of the silver plated surface is substantially improved. The treating method is useful for increasing the solderability of the metal surface, for example, in electronic packaging applications.

公开(公告)号：US07429400B2

公开(公告)日：2008-09-30

申请号：US11300254

申请日：2005-12-14

申请人： Steve Castaldi ,  John Swanson ,  Witold Paw

发明人： Steve Castaldi ,  John Swanson ,  Witold Paw

IPC分类号： B05D5/12 ,  B05D1/18

CPC分类号： H05K3/243 ,  C23C18/54 ,  H05K3/28 ,  H05K2203/0285 ,  H05K2203/073

摘要： A method of reducing solder mask interface attack in a process of fabricating printed circuit boards. The method comprises the steps of providing a printed circuit board with a solder mask applied thereon and treating the printed circuit board with an immersion plating solution, wherein the immersion plating solution is plated onto the printed circuit board with the use of ultrasonics in the plating bath. It has been found that the use of ultrasonics at a frequency of about 40 kHz for the entire plating duration provides beneficial results.

摘要翻译： 在制造印刷电路板的过程中减少焊接掩模界面攻击的方法。 该方法包括以下步骤：为印刷电路板提供涂覆有焊接掩模并用浸镀液处理印刷电路板的步骤，其中使用镀液中的超声波将浸镀液镀在印刷电路板上 。 已经发现，在整个电镀持续时间内使用大约40kHz频率的超声波提供有益的结果。