利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

43 条记录 (耗时 0.031 秒)

    Ferroelectric/high dielectric constant integrated circuit and method of fabricating same
    8.
    发明授权
    Ferroelectric/high dielectric constant integrated circuit and method of fabricating same 失效
    铁电/高介电常数集成电路及其制造方法

    公开(公告)号：US6051858A

    公开(公告)日：2000-04-18

    申请号：US892699

    申请日：1997-07-15

    申请人： Hiroto Uchida ,  Nobuyuki Soyama ,  Katsumi Ogi ,  Michael C. Scott ,  Joseph D. Cuchiaro ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

    发明人： Hiroto Uchida ,  Nobuyuki Soyama ,  Katsumi Ogi ,  Michael C. Scott ,  Joseph D. Cuchiaro ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

    IPC分类号： H01L21/8247 ,  H01L21/02 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76

    CPC分类号： H01L27/11502 ,  H01L28/55

    摘要： A transistor on a silicon substrate is covered by an insulating layer. A conducting plug passes through the insulating layer to the transistor drain. The bottom electrode of a ferroelectric capacitor that directly overlies the plug and drain contacts the plug. The ferroelectric layer is self-patterned and completely overlies the memory cell. A self-patterned sacrificial layer completely overlies the ferroelectric layer. The bottom electrode of the capacitor is completely enclosed by the ferroelectric layer, the insulating layer, and the conducting plug. The sacrificial layer comprises either: a) a metal selected from a first metal group consisting of tantalum, hafnium, tungsten, niobium and zirconium; or b) a metallic compound comprising one or more metals selected from a second group of metals consisting of titanium, tantalum, hafnium, tungsten, niobium and zirconium compounded with one or more metals from a third group of metals consisting of strontium, calcium, barium, bismuth, cadmium, and lead, such as strontium tantalate, tantalum oxide, bismuth deficient strontium bismuth tantalate, strontium titanate, strontium zirconate, strontium niobate, tantalum nitride, and tantalum oxynitride.

    摘要翻译： 硅衬底上的晶体管被​​绝缘层覆盖。 导电插塞通过绝缘层到晶体管漏极。 直接覆盖插头和漏极的铁电电容器的底部电极接触插头。 铁电层是自我构图的，并且完全覆盖在存储单元上。 自图案牺牲层完全覆盖铁电层。 电容器的底部电极被铁电体层，绝缘层和导电插塞完全包围。 牺牲层包括：a）选自由钽，铪，钨，铌和锆组成的第一金属组的金属; 或b）金属化合物，其包含一种或多种金属，所述金属选自由钛，钽，铪，钨，铌和锆组成的第二组金属，所述金属由一种或多种金属组成，所述第三组金属由锶，钙，钡 ，铋，镉和铅，例如钽酸锶，氧化钽，铋铋铋钽酸锶，钛酸锶，锆酸锶，铌酸铌，氮化钽和氮氧化钽。