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公开(公告)号：US20130280497A1
公开(公告)日：2013-10-24
申请号：US13761918
申请日：2013-02-07
申请人： Carlton Grant Wilson , Christopher John Ellison , Takehiro Seshimo , Julia Cushen , Christopher M. Bates , Leon Dean , Logan J. Santos , Erica L. Rausch
发明人： Carlton Grant Wilson , Christopher John Ellison , Takehiro Seshimo , Julia Cushen , Christopher M. Bates , Leon Dean , Logan J. Santos , Erica L. Rausch
IPC分类号： C09D137/00
CPC分类号： G03F1/50 , B05D1/005 , B05D5/00 , B05D7/52 , B05D7/56 , B05D2252/02 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , C09D137/00 , C09D167/00 , G03F7/0002 , Y10T428/24802 , Y10T428/31663 , Y10T428/31855
摘要： The present invention involves the use of random copolymer top coats that can be spin coated onto block copolymer thin films and used to control the interfacial energy of the top coat-block copolymer interface. The top coats are soluble in aqueous weak base and can change surface energy once they are deposited onto the block copolymer thin film. The use of self-assembled block copolymers to produce advanced lithographic patterns relies on their orientation control in thin films. Top coats potentially allow for the facile orientation control of block copolymers which would otherwise be quite challenging.
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2.发明申请USING CHEMICAL VAPOR DEPOSITED FILMS TO CONTROL DOMAIN ORIENTATION IN BLOCK COPOLYMER THIN FILMS 有权使用化学气相沉积膜控制嵌段共聚物薄膜中的区域方向公开(公告)号：US20130209757A1
公开(公告)日：2013-08-15
申请号：US13761324
申请日：2013-02-07
申请人： Carlton Grant Willson , William J. Durand , Christopher John Ellison , Christopher M. Bates , Takehiro Seshimo , Julia Cushen , Logan J. Santos , Leon Dean , Erica L. Rausch
发明人： Carlton Grant Willson , William J. Durand , Christopher John Ellison , Christopher M. Bates , Takehiro Seshimo , Julia Cushen , Logan J. Santos , Leon Dean , Erica L. Rausch
CPC分类号： C23C16/44 , B29C43/32 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10S977/788 , Y10S977/809 , Y10S977/811 , Y10S977/839 , Y10S977/888 , Y10S977/89 , Y10S977/891 , Y10T428/24802 , Y10T428/31504
摘要： The present invention uses vacuum deposited thin films of material to create an interface that non-preferentially interacts with different domains of an underlying block copolymer film. The non-preferential interface prevents formation of a wetting layer and influences the orientation of domains in the block copolymer. The purpose of the deposited polymer is to produce nanostructured features in a block copolymer film that can serve as lithographic patterns.
摘要翻译： 本发明使用真空沉积的材料薄膜来产生与下面的嵌段共聚物膜的不同区域非优先相互作用的界面。 非优选界面防止形成润湿层并影响嵌段共聚物中结构域的取向。 沉积的聚合物的目的是在嵌段共聚物膜中产生可用作光刻图案的纳米结构特征。
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公开(公告)号：US20130266780A1
公开(公告)日：2013-10-10
申请号：US13761763
申请日：2013-02-07
IPC分类号： B05C21/00
CPC分类号： C09D167/00 , B05C21/005 , B05D1/005 , B05D3/00 , B05D5/00 , B82Y10/00 , B82Y40/00 , C08F8/02 , C08F112/14 , C08F2810/40 , C08G63/6952 , G03F7/0002 , Y10T428/24851 , Y10T428/31504
摘要： The present invention includes a diblock copolymer system that self-assembles at very low molecular weights to form very small features. In one embodiment, one polymer in the block copolymer contains silicon, and the other polymer is a polylactide. In one embodiment, the block copolymer is synthesized by a combination of anionic and ring opening polymerization reactions. In one embodiment, the purpose of this block copolymer is to form nanoporous materials that can be used as etch masks in lithographic patterning.
摘要翻译： 本发明包括以非常低的分子量自组装形成非常小的特征的二嵌段共聚物体系。 在一个实施方案中，嵌段共聚物中的一种聚合物含有硅，另一种聚合物是聚丙交酯。 在一个实施方案中，嵌段共聚物通过阴离子和开环聚合反应的组合合成。 在一个实施方案中，该嵌段共聚物的目的是形成可用作光刻图案化中的蚀刻掩模的纳米多孔材料。
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4.发明申请OLIGOSACCHARIDE/SILICON-CONTAINING BLOCK COPOLYMERS FOR LITHOGRAPHY APPLICATIONS 审中-公开低分子量/硅含量嵌段共聚物公开(公告)号：US20130022785A1
公开(公告)日：2013-01-24
申请号：US13528314
申请日：2012-06-20
申请人： Christopher John Ellison , Julia Cushen , Issei Otsuka , C. Grant Willson , Christopher M. Bates , Jeffery Alan Easley , Redouane Borsali , Sebastien Fort , Sami Halila
发明人： Christopher John Ellison , Julia Cushen , Issei Otsuka , C. Grant Willson , Christopher M. Bates , Jeffery Alan Easley , Redouane Borsali , Sebastien Fort , Sami Halila
CPC分类号： C08F293/005 , B82Y10/00 , B82Y40/00 , C07H23/00 , C08B37/0006 , C08B37/0012 , C08G81/024 , G03F7/0002 , Y10T428/24355
摘要： The present invention discloses diblock copolymer systems that self-assemble to produce very small structures. These co-polymers consist of one block that contains silicon and another block comprised of an oligosaccharide that are coupled by azide-alkyne cycloaddition.
摘要翻译： 本发明公开了自组装以产生非常小的结构的二嵌段共聚物体系。 这些共聚物由含有硅的一个嵌段和由通过叠氮炔 - 环加成偶联的寡糖组成的另一嵌段组成。
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公开(公告)号：US09120117B2
公开(公告)日：2015-09-01
申请号：US13761763
申请日：2013-02-07
IPC分类号： B05D1/00 , B05D3/00 , B05D5/00 , B05C21/00 , C08G63/695 , C08F112/14 , G03F7/00 , B82Y10/00 , B82Y40/00
CPC分类号： C09D167/00 , B05C21/005 , B05D1/005 , B05D3/00 , B05D5/00 , B82Y10/00 , B82Y40/00 , C08F8/02 , C08F112/14 , C08F2810/40 , C08G63/6952 , G03F7/0002 , Y10T428/24851 , Y10T428/31504
摘要： A diblock copolymer system that self-assembles at very low molecular weights to form very small features is described. One polymer in the block copolymer contains silicon, and the other polymer is a polylactide. The block copolymer may be synthesized by a combination of anionic and ring opening polymerization reactions. This block copolymer may form nanoporous materials that can be used as etch masks in lithographic patterning.
摘要翻译： 描述了以非常低分子量自组装形成非常小的特征的二嵌段共聚物体系。 嵌段共聚物中的一种聚合物含有硅，另一种聚合物是聚丙交酯。 嵌段共聚物可以通过阴离子和开环聚合反应的组合来合成。 该嵌段共聚物可以形成可用作光刻图案化中的蚀刻掩模的纳米多孔材料。
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公开(公告)号：US20130045361A1
公开(公告)日：2013-02-21
申请号：US13583518
申请日：2011-03-17
CPC分类号： C09D153/00 , B05D1/005 , B81C1/00031 , B81C2201/0149 , G03F7/0002 , G03F7/265 , Y10T428/24355 , Y10T428/265 , Y10T428/31935 , Y10T428/31938
摘要： The present invention relates to a method the synthesis and utilization of random, cross-linked, substituted polystyrene copolymers as polymeric cross-linked surface treatments (PXSTs) to control the orientation of physical features of a block copolymer deposited over the first copolymer. Such methods have many uses including multiple applications in the semi-conductor industry including production of templates for nanoimprint lithography.
摘要翻译： 本发明涉及合成和利用随机交联的取代的聚苯乙烯共聚物作为聚合交联表面处理（PXST）的方法，以控制沉积在第一共聚物上的嵌段共聚物的物理特征的取向。 这种方法具有许多用途，包括半导体工业中的多种应用，包括生产纳米压印光刻的模板。
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公开(公告)号：US20130196019A1
公开(公告)日：2013-08-01
申请号：US13583369
申请日：2011-03-17
申请人： C. Grant Willson , Christopher M. Bates , Jeffrey Strahan , Christopher John Ellison , Brennen Mueller
发明人： C. Grant Willson , Christopher M. Bates , Jeffrey Strahan , Christopher John Ellison , Brennen Mueller
CPC分类号： B05D3/107 , G03F7/0758 , G03F7/16 , G03F7/165 , G03F7/2051 , H01L21/02
摘要： The present invention describes the synthesis of silicon-containing monomers and copolymers. The synthesis of a monomer, trimethyl-(2-methylenebut-3-enyl)silane (TMSI) and subsequent synthesis of diblock copolymer with styrene, forming polystyrene-block-polytrimethylsilyl isoprene, and synthesis of diblock copolymer Polystyrene-block-polymethacryloxymethyltrimethylsilane or PS-b-P(MTMSMA). These silicon containing diblock copolymers have a variety of uses. One preferred application is as novel imprint template material with sub-100 nm features for lithography.
摘要翻译： 本发明描述了含硅单体和共聚物的合成。 合成单体，三甲基 - （2-甲基丁烯-3-烯基）硅烷（TMSI），随后与苯乙烯合成二嵌段共聚物，形成聚苯乙烯嵌段聚三甲基甲硅烷基异戊二烯，合成二嵌段共聚物聚苯乙烯嵌段聚甲基丙烯酰氧甲基三甲基硅烷或PS -bP（MTMSMA）。 这些含硅二嵌段共聚物具有多种用途。 一个优选的应用是作为新颖的印模模板材料，具有用于光刻的亚100nm特征。
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公开(公告)号：US09120947B2
公开(公告)日：2015-09-01
申请号：US13583518
申请日：2011-03-17
CPC分类号： C09D153/00 , B05D1/005 , B81C1/00031 , B81C2201/0149 , G03F7/0002 , G03F7/265 , Y10T428/24355 , Y10T428/265 , Y10T428/31935 , Y10T428/31938
摘要： The present invention relates to a method the synthesis and utilization of random, cross-linked, substituted polystyrene copolymers as polymeric cross-linked surface treatments (PXSTs) to control the orientation of physical features of a block copolymer deposited over the first copolymer. Such methods have many uses including multiple applications in the semiconductor industry including production of templates for nanoimprint lithography.
摘要翻译： 本发明涉及合成和利用随机交联的取代的聚苯乙烯共聚物作为聚合交联表面处理（PXST）的方法，以控制沉积在第一共聚物上的嵌段共聚物的物理特征的取向。 这种方法具有许多用途，包括半导体工业中的多种应用，包括生产纳米压印光刻用模板。
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