-
公开(公告)号：US4156614A
公开(公告)日：1979-05-29
申请号：US839990
申请日：1977-10-06
IPC分类号： C04B35/10 , B22C1/00 , B22C1/08 , C04B35/101 , C04B35/113 , C04B38/00 , B28B7/34
CPC分类号： C04B35/113 , B22C1/00 , C04B35/101
摘要： Cores made of alumina-based ceramics, such as .beta.-alumina materials, are substantially non-reactive with directionally solidified eutectic and superalloy materials, do not cause hot cracking of the same, and are easily leachable from the cast metal.
摘要翻译： 由{62-氧化铝材料等的氧化铝系陶瓷制成的1个核心基本上与定向凝固的共晶和超合金材料无反应性，不会引起热裂纹，容易从铸造金属中浸出 。
-
公开(公告)号：US4241135A
公开(公告)日：1980-12-23
申请号：US10748
申请日：1979-02-09
CPC分类号： C04B35/645 , B01J3/062 , B22F7/06 , B24D18/0009 , B32B18/00 , C04B35/52 , C04B35/565 , C04B35/575 , C04B35/6316 , C04B35/6455 , C04B37/001 , B01J2203/062 , B01J2203/0635 , B01J2203/0655 , B01J2203/0685 , C04B2235/3821 , C04B2235/3826 , C04B2235/383 , C04B2235/3834 , C04B2235/3839 , C04B2235/3843 , C04B2235/3847 , C04B2235/3891 , C04B2235/40 , C04B2235/404 , C04B2235/405 , C04B2235/408 , C04B2235/421 , C04B2235/422 , C04B2235/428 , C04B2235/5436 , C04B2235/5472 , C04B2235/616 , C04B2235/658 , C04B2235/6581 , C04B2235/6582 , C04B2235/721 , C04B2235/728 , C04B2235/77 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , C04B2237/361 , C04B2237/363 , C04B2237/365 , C04B2237/525 , C04B2237/61 , C04B2237/704 , Y10S428/911 , Y10T428/24992 , Y10T428/26 , Y10T428/2993 , Y10T428/2995 , Y10T428/30
摘要： A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy and a silicon carbide ceramic substrate are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals and contacts the contacting face of the silicon carbide substrate sufficiently producing, upon cooling, an adherently bonded integral composite.
摘要翻译： 与大量共晶富硅合金和碳化硅陶瓷基板接触的大量金刚石晶体设置在容器中并放置在压力传递粉末介质中。 压力被施加到粉末介质上，导致基本上均衡的压力被施加到容器及其内容物足以使容器及其内容物尺寸稳定。 将所得到的粉末包裹容器的基本均匀的体系进行热压，由此产生流体共晶富含硅的合金并渗入金刚石晶体之间的间隙并与碳化硅衬底的接触面接触，在冷却时， 贴合的整体复合材料。
-
公开(公告)号：US4143544A
公开(公告)日：1979-03-13
申请号：US809004
申请日：1977-06-22
申请人： Robert C. DeVries , Roy E. Tuft
发明人： Robert C. DeVries , Roy E. Tuft
CPC分类号： G01N33/381 , G01N27/60
摘要： A diamond or cubic boron nitride crystal containing growth discontinuities resulting from changes in the environment of the growing crystal and having at least one smooth outside surface which intersects the growth discontinuities is charged electrostatically, a fine powder is applied to the charged smooth surface and the applied powder produces a pattern on the charged surface which is a delineation of the intersected growth discontinuities.
摘要翻译： 包含由生长晶体的环境变化而产生的具有与生长不连续相交的至少一个平滑外表面的生长不连续性的金刚石或立方氮化硼晶体静电充电，将细粉末施加到带电的光滑表面上， 粉末在带电表面上产生图案，其是相交的生长不连续性的描绘。
-
公开(公告)号：US4234661A
公开(公告)日：1980-11-18
申请号：US19366
申请日：1979-03-12
CPC分类号： C04B41/009 , B24D3/08 , B32B18/00 , C04B35/6455 , C04B41/5002 , C04B41/85 , C04B2235/658 , C04B2235/6581 , C04B2235/6582 , C04B2237/363 , C04B2237/368 , C04B2237/60 , C04B2237/61 , C04B2237/704 , Y10T428/31504
摘要： A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy and a silicon nitride ceramic substrate are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals and contacts the contacting face of the silicon nitride substrate sufficiently producing, upon cooling, an adherently bonded integral composite.
摘要翻译： 与大量共晶富硅合金和氮化硅陶瓷基板接触的大量金刚石晶体设置在容器中并放置在压力传递粉末介质中。 压力被施加到粉末介质上，导致基本上均衡的压力被施加到容器及其内容物足以使容器及其内容物尺寸稳定。 所得到的粉末包裹容器的基本均匀的体系被热压，从而产生流体共晶富含硅的合金，并渗入金刚石晶体之间的间隙并与氮化硅衬底的接触面接触，在冷却时， 贴合的整体复合材料。
-
公开(公告)号：US4124401A
公开(公告)日：1978-11-07
申请号：US844448
申请日：1977-10-21
CPC分类号： C04B35/645 , B01J3/062 , C04B35/52 , C04B35/6316 , B01J2203/062 , B01J2203/0655 , B01J2203/0685 , B22F2005/001 , C04B2235/3826 , C04B2235/3839 , C04B2235/3843 , C04B2235/3847 , C04B2235/3891 , C04B2235/40 , C04B2235/404 , C04B2235/405 , C04B2235/408 , C04B2235/427 , C04B2235/428 , C04B2235/5436 , C04B2235/5472 , C04B2235/616 , C04B2235/721 , C04B2235/728 , C04B2235/80 , C04B2235/96
摘要： A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals producing, upon cooling, an adherently bonded integral body.
摘要翻译： 与大量共晶富含硅的合金接触的大量金刚石晶体设置在容器中并放置在压力传递粉末介质中。 压力被施加到粉末介质上，导致基本上均衡的压力被施加到容器及其内容物足以使容器及其内容物尺寸稳定。 将所形成的基本上均匀的粉末包封容器的等静压系统热压，从而产生流体共晶富含硅的合金，并通过金刚石晶体之间的间隙渗透，在冷却时产生粘附的整体。
-
6.发明授权Apparatus for synthetic diamond deposition including spring-tensioned filaments 失效用于合成金刚石沉积的装置，包括弹簧张紧的细丝
公开(公告)号：US4970986A
公开(公告)日：1990-11-20
申请号：US469986
申请日：1990-01-25
申请人： Thomas R. Anthony , Richard A. Engler , Robert H. Ettinger , James F. Fleischer , Robert C. DeVries
发明人： Thomas R. Anthony , Richard A. Engler , Robert H. Ettinger , James F. Fleischer , Robert C. DeVries
IPC分类号： C04B41/87 , C23C16/26 , C23C16/27 , C23C16/44 , C23C16/46 , C30B25/10 , C30B25/16 , C30B29/04
CPC分类号： C23C16/44 , C23C16/271
摘要： Diamond is deposited by chemical vapor deposition on two parallel substrates, by means of a plurality of filaments between said substrates. The substrates and filaments are in vertical configuration and the filaments are linear and spring-tensioned to compensate for thermal expansion and expansion caused by filament carburization. The apparatus includes at least one and preferably two temperature controlling means, usually heat sinks, to maintain substrate temperature in the range of 900.degree.-1000.degree. C., for optimum rate of diamond deposition.
-
7.发明授权Apparatus for synthetic diamond deposition including curved filaments and substrate cooling means 失效用于合成金刚石沉积的装置，包括弯曲细丝和基底冷却装置
公开(公告)号：US4953499A
公开(公告)日：1990-09-04
申请号：US389212
申请日：1989-08-03
申请人： Thomas R. Anthony , Robert C. DeVries , Richard A. Engler , Robert H. Ettinger , James F. Fleischer
发明人： Thomas R. Anthony , Robert C. DeVries , Richard A. Engler , Robert H. Ettinger , James F. Fleischer
IPC分类号： C04B41/87 , C23C16/26 , C23C16/27 , C23C16/44 , C23C16/458 , C23C16/46 , C30B25/10 , C30B29/04
CPC分类号： C23C16/463 , C23C16/271 , C23C16/46 , Y10T117/10
摘要： Diamond is deposited by chemical vapor deposition on two parallel substrates, by means of a plurality of filaments between the substrates. The substrates and filaments are in vertical configuration and the filaments are prestressed to curve in a single plane parallel to the substrates, to allow for thermal expansion and expansion caused by filament carburization. The apparatus includes at least one and preferably two heat sinks to maintain substrate temperatures in the range of 900.degree.-1000.degree. C., for optimum rate of diamond deposition.
-
公开(公告)号：US4248606A
公开(公告)日：1981-02-03
申请号：US69205
申请日：1979-08-23
CPC分类号： B21C3/025 , B01J3/062 , B23P5/00 , C01B31/06 , B01J2203/062 , B01J2203/0645 , B01J2203/0655 , B01J2203/066 , B01J2203/0685
摘要： Compacts are provided in which one or more single crystal diamonds, having a largest dimension of at least one millimeter, are embedded in the polycrystalline matrix which may be made of diamond; cubic boron nitride (CNB); and silicon and silicon carbide bonded diamond, CBN, or mixtures of diamond and CBN. The single crystal diamond is from 10-90 volume percent of the compact.The compacts (except for the silicon and silicon carbide variety) are made by high pressure-high temperature processing generally in the range of 50 Kbar at 1300.degree. C. to 85 Kbar at 1750.degree. C.They have applications in several fields, for example, wire drawing die blands, cutting tool blanks, and anvils for high pressure apparatus.
摘要翻译： 提供了紧凑件，其中具有至少一毫米的最大尺寸的一个或多个单晶金刚石嵌入可由金刚石制成的多晶基体中; 立方氮化硼（CNB）; 硅和碳化硅结合的金刚石，CBN或金刚石和CBN的混合物。 单晶金刚石的体积为10-90体积％。 压实体（硅和碳化硅种类除外）是通过高压高温加工制成的，通常在1300℃至50Kbar的范围内，在1750℃下为85Kbar。它们在几个领域中有应用，例如 拉丝模具，切割工具坯料和高压设备的砧座。
-
公开(公告)号：US4167399A
公开(公告)日：1979-09-11
申请号：US894760
申请日：1978-04-10
CPC分类号： C04B35/645 , B01J3/062 , B22F3/15 , B24D3/08 , C04B35/52 , C04B35/6316 , B01J2203/062 , B01J2203/0655 , B01J2203/0685 , C04B2235/3826 , C04B2235/427 , C04B2235/428 , C04B2235/5436 , C04B2235/616 , C04B2235/721 , C04B2235/728 , C04B2235/80 , C04B2235/96
摘要： A cavity of predetermined size is formed in a compressed pressure transmitting powder medium, a mass of diamond crystals in contact with a mass of elemental silicon are disposed within the cavity and additional pressure transmitting powder is placed over the cavity and its contents producing a powder-enveloped cavity. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the cavity therein and its contents sufficient to dimensionally stabilize the cavity and its contents. The resulting shaped substantially isostatic system of powder-enveloped diamond and silicon is hot-pressed to liquefy and infiltrate the silicon through the interstices between the diamond crystals producing, upon cooling, an adherently bonded integral body.
摘要翻译： 在压缩压力传递粉末介质中形成预定尺寸的空腔，将与大量元素硅接触的大量金刚石晶体设置在空腔内，并且将额外的压力传递粉末放置在空腔上，并且其内含物产生粉末 - 包络腔。 压力施加到粉末介质上，导致基本上等静压力施加到其中的空腔中，并且其内容物足以使空腔及其内容物尺寸稳定。 所得到的粉末包裹的金刚石和硅的基本均匀的等静压系统被热压，以通过金刚石晶体之间的间隙液化和渗透硅，在冷却时产生粘附的整体。
-
公开(公告)号：US4958592A
公开(公告)日：1990-09-25
申请号：US234773
申请日：1988-08-22
申请人： Thomas R. Anthony , Robert C. DeVries , Richard A. Engler , Robert H. Ettinger , James F. Fleischer
发明人： Thomas R. Anthony , Robert C. DeVries , Richard A. Engler , Robert H. Ettinger , James F. Fleischer
CPC分类号： C30B25/10 , C23C16/271 , C23C16/44 , C30B25/02 , C30B29/04
摘要： A plural substrate CVD apparatus for diamond crystal production utilizes spaced apart vertical, parallel, planar substrate panels with an electrical (direct current, D.C.) resistance filament heater therebetween. A hydrogen-hydrocarbon gas mixture flows between panels to come into contact with the heater and the panels to cause diamond crystal nucleation and growth on the substrate panels. The apparatus includes means for maintaining the spaced relationship of the heater from the substrate surfaces, comprising a rod member attached to one end of the heater and tensioned by a cable passing over a pulley member and attached to a weight.
摘要翻译： 用于金刚石晶体生产的多基板CVD装置利用间隔开的垂直，平行，平面的基板面板，其间具有电（直流，直流）电阻丝加热器。 氢 - 烃气体混合物在面板之间流动以与加热器和面板接触，从而在衬底面板上引起金刚石晶体成核和生长。 该装置包括用于保持加热器与衬底表面间隔开的关系的装置，包括连接到加热器的一端并由穿过皮带轮构件并连接到重物上的电缆张紧的杆构件。
-
-
-
-
-
-
-
-
-
搜索结果
13 条记录 (耗时 0.019 秒)
