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公开(公告)号：US07191508B2
公开(公告)日：2007-03-20
申请号：US10917591
申请日：2004-08-13
CPC分类号： G11B5/3173 , G11B5/102 , G11B5/105 , G11B5/3106 , G11B5/3163 , Y10T29/49032 , Y10T29/49041
摘要： A method for manufacturing thin-film magnetic head sliders is disclosed. Initially, an elastic layer, which may be made of poly-dimethyl siloxane (PDMS), is spun on a wafer and is thermally cured. Then, a resist layer is spun on the elastic layer. Both the resist layer and the elastic layer are subsequently peeled off together from the wafer. Next, the peeled resist layer/elastic layer is applied onto a group of magnetic heads with the resist layer in direct contact with the magnetic heads. Finally, the elastic layer is peeled off from the resist layer such that the resist layer remains attaching to the magnetic heads.
摘要翻译： 公开了一种制造薄膜磁头滑块的方法。 最初，可以由聚二甲基硅氧烷（PDMS）制成的弹性层在晶片上旋转并被热固化。 然后，在弹性层上旋转抗蚀剂层。 抗蚀剂层和弹性层随后从晶片一起剥离。 接下来，将剥离的抗蚀剂层/弹性层施加到一组磁头上，其中抗蚀剂层与磁头直接接触。 最后，弹性层从抗蚀剂层剥离，使得抗蚀剂层保持附着在磁头上。
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公开(公告)号：US20050091836A1
公开(公告)日：2005-05-05
申请号：US10917591
申请日：2004-08-13
申请人： Cherngye Hwang , Kim Lee , Gary McClelland , Dennis McKean , Timothy Reiley
发明人： Cherngye Hwang , Kim Lee , Gary McClelland , Dennis McKean , Timothy Reiley
CPC分类号： G11B5/3173 , G11B5/102 , G11B5/105 , G11B5/3106 , G11B5/3163 , Y10T29/49032 , Y10T29/49041
摘要： A method for manufacturing thin-film magnetic head sliders is disclosed. Initially, an elastic layer, which may be made of poly-dimethyl siloxane (PDMS), is spun on a wafer and is thermally cured. Then, a resist layer is spun on the elastic layer. Both the resist layer and the elastic layer are subsequently peeled off together from the wafer. Next, the peeled resist layer/elastic layer is applied onto a group of magnetic heads with the resist layer in direct contact with the magnetic heads. Finally, the elastic layer is peeled off from the resist layer such that the resist layer remains attaching to the magnetic heads.
摘要翻译： 公开了一种制造薄膜磁头滑块的方法。 最初，可以由聚二甲基硅氧烷（PDMS）制成的弹性层在晶片上旋转并被热固化。 然后，在弹性层上旋转抗蚀剂层。 抗蚀剂层和弹性层随后从晶片一起剥离。 接下来，将剥离的抗蚀剂层/弹性层施加到一组磁头上，其中抗蚀剂层与磁头直接接触。 最后，弹性层从抗蚀剂层剥离，使得抗蚀剂层保持附着在磁头上。
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3.发明申请公开(公告)号：US20060145134A1
公开(公告)日：2006-07-06
申请号：US11335329
申请日：2006-01-19
IPC分类号： H01L29/04
CPC分类号： H01L27/2409 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1675
摘要： A method for fabrication and a structure of a self-aligned (crosspoint) memory device comprises lines (wires) in a first direction and in a second direction. The wires in the first direction are formed using a hard mask material that is resistant to the pre-selected etch processes used for creation of the lines in both the first and the second direction. Consequently, the hard mask material for the lines in the first direction form part of the memory stack.
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公开(公告)号：US20050265072A1
公开(公告)日：2005-12-01
申请号：US10856547
申请日：2004-05-28
申请人： Mark Hart , Chung Lam , Christie Marrian , Gary McClelland , Simone Raoux , Charles Rettner , Hemantha Wickramasinghe
发明人： Mark Hart , Chung Lam , Christie Marrian , Gary McClelland , Simone Raoux , Charles Rettner , Hemantha Wickramasinghe
CPC分类号： H01L27/24 , G11C13/0004 , G11C13/0069 , G11C2013/008 , G11C2213/72 , H01L27/2463 , H01L45/06 , H01L45/124 , H01L45/1286 , H01L45/144 , H01L45/1666
摘要： A method and structure for a memory cell comprising a phase change material; a heating element in thermal contact with the phase change material, wherein the heating element is adapted to induce a phase change in the phase change material; and electrical lines configured to pass current through the heating element, wherein the phase change material and the heating element are arranged in a configuration other than being electrically connected in series. The memory cell further comprises a sensing element in thermal contact with the phase change material, wherein the sensing element is adapted to detect a change in at least one physical property of the phase change material, wherein the sensing element is adapted to detect a change in a thermal conductivity of the phase change material.
摘要翻译： 一种包括相变材料的存储单元的方法和结构; 与所述相变材料热接触的加热元件，其中所述加热元件适于引起所述相变材料的相变; 以及配置为使电流通过所述加热元件的电线，其中所述相变材料和所述加热元件被布置成不是串联电连接的构造。 存储单元还包括与相变材料热接触的感测元件，其中感测元件适于检测相变材料的至少一个物理特性的变化，其中感测元件适于检测相变材料的变化 相变材料的导热性。
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5.发明申请Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation 有权非平面化，自对准，非易失性相变存储器阵列和形成方法公开(公告)号：US20050242338A1
公开(公告)日：2005-11-03
申请号：US10835814
申请日：2004-04-30
CPC分类号： H01L27/2409 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1675
摘要： A method for fabrication and a structure of a self-aligned (crosspoint) memory device comprises lines (wires) in a first direction and in a second direction. The wires in the first direction are formed using a hard mask material that is resistant to the pre-selected etch processes used for creation of the lines in both the first and the second direction. Consequently, the hard mask material for the lines in the first direction form part of the memory stack.
摘要翻译： 用于制造的方法和自对准（交叉点）存储器件的结构包括在第一方向和第二方向上的线（线）。 使用硬掩模材料形成第一方向上的导线，该硬掩模材料抵抗用于在第一和第二方向上产生线的预选蚀刻工艺。 因此，用于沿第一方向的线的硬掩模材料形成存储器堆叠的一部分。
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6.发明申请Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning 有权使用光刻印刷法制造双镶嵌结构的方法，用于制造用于双镶嵌结构的压印光刻模具的方法，用于可压印电介质的材料和用于双重镶嵌图案中的光刻印刷光刻设备公开(公告)号：US20050202350A1
公开(公告)日：2005-09-15
申请号：US10799282
申请日：2004-03-13
IPC分类号： B29C33/38 , G03F7/00 , H01L21/768
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L21/76807 , H01L21/76817 , H01L2924/0002 , Y10S425/81 , Y10T428/16 , Y10T428/24851 , Y10T428/31504 , H01L2924/00
摘要： The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.
摘要翻译： 制造用于半导体芯片的互连架构的双镶嵌结构的过程。 更具体地说，使用压印光刻法在电介质中制造双镶嵌结构以及制造双镶嵌结构的模具。
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