Methods of cooling process chamber components
    1.
    发明授权
    Methods of cooling process chamber components 有权
    冷却过程室组件的方法

    公开(公告)号:US09165804B2

    公开(公告)日:2015-10-20

    申请号:US13452292

    申请日:2012-04-20

    Abstract: Methods for cooling process chamber components are provided herein. In some embodiments, a method of cooling a process chamber component may include reducing a power provided to a heater disposed proximate a surface of the process chamber component to reduce an amount of heat provided to the component by the heater; providing a coolant to coolant channels disposed within the process chamber component using a pulsed flow having a duty cycle until the process chamber component reaches a temperature that is less than or equal to a predetermined magnitude above a temperature of the coolant; and after the process chamber component reaches the temperature less than or equal to the predetermined magnitude above a temperature of the coolant, reducing the duty cycle of the pulsed flow of the coolant to zero.

    Abstract translation: 本文提供了冷却处理室部件的方法。 在一些实施例中,冷却处理室部件的方法可以包括减小设置在处理室部件表面附近的加热器的功率,以减少由加热器提供给部件的热量; 使用具有占空比的脉冲流将冷却剂提供给设置在处理室部件内的冷却剂通道,直到处理室部件达到小于或等于超过冷却剂温度的预定大小的温度; 并且在处理室部件达到小于或等于超过冷却剂温度的预定大小的温度时,将冷却剂的脉冲流量的占空比减小到零。

    TEMPERATURE CONTROLLED PLASMA PROCESSING CHAMBER COMPONENT WITH ZONE DEPENDENT THERMAL EFFICIENCES
    2.
    发明申请
    TEMPERATURE CONTROLLED PLASMA PROCESSING CHAMBER COMPONENT WITH ZONE DEPENDENT THERMAL EFFICIENCES 审中-公开
    温度控制等离子体加工室组件,具有相关的热效率

    公开(公告)号:US20140083978A1

    公开(公告)日:2014-03-27

    申请号:US14087976

    申请日:2013-11-22

    Abstract: Components and systems for controlling a process or chamber component temperature as a plasma process is executed by plasma processing apparatus. A first heat transfer fluid channel is disposed in a component subjacent to a working surface disposed within a plasma processing chamber such that a first length of the first channel subjacent to a first temperature zone of the working surface comprises a different heat transfer coefficient, h, or heat transfer area, A, than a second length of the first channel subjacent to a second temperature zone of the working surface. In embodiments, different heat transfer coefficients or heat transfer areas are provided as a function of temperature zone to make more independent the temperature control of the first and second temperature zones.

    Abstract translation: 通过等离子体处理装置执行用于控制作为等离子体处理的工艺或室部件温度的部件和系统。 第一传热流体通道设置在位于等离子体处理室内的工作表面的下方的部件中,使得位于工作表面的第一温度区域下方的第一通道的第一长度包括不同的传热系数h, 或传热面积A比第一通道的第二长度低于工作表面的第二温度区域。 在实施例中,提供不同的传热系数或传热面积作为温度区域的函数,以使第一和第二温度区域的温度控制更独立。

    Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies
    5.
    发明授权
    Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies 有权
    具有区域依赖热效率的温度控制等离子体处理室部件

    公开(公告)号:US08608852B2

    公开(公告)日:2013-12-17

    申请号:US13111384

    申请日:2011-05-19

    Abstract: Components and systems for controlling a process or chamber component temperature as a plasma process is executed by plasma processing apparatus. A first heat transfer fluid channel is disposed in a component subjacent to a working surface disposed within a plasma processing chamber such that a first length of the first channel subjacent to a first temperature zone of the working surface comprises a different heat transfer coefficient, h, or heat transfer area, A, than a second length of the first channel subjacent to a second temperature zone of the working surface. In embodiments, different heat transfer coefficients or heat transfer areas are provided as a function of temperature zone to make more independent the temperature control of the first and second temperature zones.

    Abstract translation: 通过等离子体处理装置执行用于控制作为等离子体处理的工艺或室部件温度的部件和系统。 第一传热流体通道设置在位于等离子体处理室内的工作表面的下方的部件中,使得位于工作表面的第一温度区域下方的第一通道的第一长度包括不同的传热系数h, 或传热区域A比第一通道的第二长度低于工作表面的第二温度区域。 在实施例中,提供不同的传热系数或传热面积作为温度区域的函数,以使第一和第二温度区域的温度控制更独立。

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