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28 条记录 (耗时 0.048 秒)

    Gas distribution plate electrode for a plasma reactor
    4.
    发明授权
    Gas distribution plate electrode for a plasma reactor 有权
    用于等离子体反应器的气体分布板电极

    公开(公告)号：US06586886B1

    公开(公告)日：2003-07-01

    申请号：US10027732

    申请日：2001-12-19

    申请人： Dan Katz ,  Douglas A. Buchberger, Jr. ,  Yan Ye ,  Robert B. Hagen ,  Xiaoye Zhao ,  Ananda H. Kumar ,  Kang-Lie Chiang ,  Hamid Noorbakhsh ,  Shiang-Bau Wang

    发明人： Dan Katz ,  Douglas A. Buchberger, Jr. ,  Yan Ye ,  Robert B. Hagen ,  Xiaoye Zhao ,  Ananda H. Kumar ,  Kang-Lie Chiang ,  Hamid Noorbakhsh ,  Shiang-Bau Wang

    IPC分类号： H01J724

    CPC分类号： H01J37/3244

    摘要： The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.

    摘要翻译： 本发明体现在用于处理半导体晶片的等离子体反应器中，该反应器具有气体分配板，该气体分配板包括在该腔室中的前板和在前板的外侧上的后板，该气体分配板包括邻近的气体歧管 背板，后板和前板结合在一起并形成组件。 组件包括穿过前板并与腔室连通的孔阵列，至少一个通过后板的气体流量控制孔，并在歧管和至少一个孔之间连通，孔口具有确定气体的直径 至少一个孔的流速。 此外，一组圆盘至少大体上与孔阵列一致，并且设置在孔的相应孔内，以限定用于气体流过前板进入腔室的环形气体通道，每个环形气体通道是非限制性的， 与孔对齐。

    Gas distribution plate electrode for a plasma receptor
    5.
    发明授权
    Gas distribution plate electrode for a plasma receptor 有权
    用于等离子体受体的气体分布板电极

    公开(公告)号：US06677712B2

    公开(公告)日：2004-01-13

    申请号：US10442386

    申请日：2003-05-20

    申请人： Dan Katz ,  Douglas A. Buchberger, Jr. ,  Yan Ye ,  Robert B. Hagen ,  Xiaoye Zhao ,  Ananda H. Kumar ,  Kang-Lie Chiang ,  Hamid Noorbakhsh ,  Shiang-Bau Wang

    发明人： Dan Katz ,  Douglas A. Buchberger, Jr. ,  Yan Ye ,  Robert B. Hagen ,  Xiaoye Zhao ,  Ananda H. Kumar ,  Kang-Lie Chiang ,  Hamid Noorbakhsh ,  Shiang-Bau Wang

    IPC分类号： H01J724

    CPC分类号： H01J37/3244

    摘要： The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.

    摘要翻译： 本发明体现在用于处理半导体晶片的等离子体反应器中，该反应器具有气体分配板，该气体分配板包括在该腔室中的前板和在前板的外侧上的后板，该气体分配板包括邻近的气体歧管 背板，后板和前板结合在一起并形成组件。 组件包括穿过前板并与腔室连通的孔阵列，至少一个通过后板的气体流量控制孔，并在歧管和至少一个孔之间连通，孔口具有确定气体的直径 至少一个孔的流速。 此外，一组圆盘至少大体上与孔阵列一致，并且设置在孔的相应孔内，以限定用于气体流过前板进入腔室的环形气体通道，每个环形气体通道是非限制性的， 与孔对齐。

    Electrostatic chuck having electrode with rounded edge
    6.
    发明申请
    Electrostatic chuck having electrode with rounded edge 审中-公开
    具有圆形边缘电极的静电吸盘

    公开(公告)号：US20050016465A1

    公开(公告)日：2005-01-27

    申请号：US10626156

    申请日：2003-07-23

    申请人： Kartik Ramaswamy ,  Jon McChesney ,  Ananda Kumar ,  Hamid Noorbakhsh

    发明人： Kartik Ramaswamy ,  Jon McChesney ,  Ananda Kumar ,  Hamid Noorbakhsh

    IPC分类号： H01L21/68 ,  H01L21/683 ,  H02N13/00 ,  C23C16/00

    CPC分类号： H01L21/6833 ,  H02N13/00

    摘要： An electrostatic chuck provides reduced electric field effects about its peripheral edge. In one version, the chuck comprises a dielectric covering an electrode having a perimeter and a wire loop extending about the perimeter, the wire loop having a radially outwardly facing surface that is substantially rounded. Alternatively, the electrode may have a central planar portion comprising a top surface and a bottom surface, and a peripheral arcuate portion having a tip with a curvature length of at least about π/8 radians between a normal to the top surface of the central planar portion and a normal to the upper surface of the tip. The electrostatic chuck is used to hold a substrate in a process chamber of a substrate processing apparatus.

    摘要翻译： 静电吸盘可以减少围绕其外围边缘的电场效应。 在一个版本中，卡盘包括覆盖具有周边的电极的电介质和围绕周边延伸的导线环，所述导线环具有基本上圆形的径向向外的表面。 或者，电极可以具有包括顶表面和底表面的中心平面部分，以及周边弓形部分，其具有尖端，该尖端具有在中心平面的顶表面之间的法线之间的至少约π/ 8弧度的曲率长度 并且与尖端的上表面垂直。 静电卡盘用于将基板保持在基板处理装置的处理室中。

    Method and apparatus for controlling a temperature of a wafer
    9.
    发明授权
    Method and apparatus for controlling a temperature of a wafer 有权
    用于控制晶片温度的方法和装置

    公开(公告)号：US06303895B1

    公开(公告)日：2001-10-16

    申请号：US09588122

    申请日：2000-06-02

    申请人： Anwar Husain ,  Hamid Noorbakhsh

    发明人： Anwar Husain ,  Hamid Noorbakhsh

    IPC分类号： B23K1000

    CPC分类号： H01L21/67109

    摘要： A method and apparatus for controlling a temperature of a wafer during processing such as in a gas plasma or nonplasma environment wherein a wafer is positioned on a chuck. The wafer is heated and a pressurized gas is introduced into a space between the wafer and the chuck such that the pressurized gas transfers heat from the wafer to the chuck. Pressure of the pressuried gas is automatically varied such that heat transfer between the wafer and the chuck is varied in response to a difference between an actual wafer temperature and a desired wafer temperature to maintain the desired wafer temperature.

    摘要翻译： 一种用于在处理期间控制晶片的温度的方法和装置，例如在气体等离子体或非等离子体环境中，其中晶片位于卡盘上。 晶片被加热并且加压气体被引入到晶片和卡盘之间的空间中，使得加压气体将热从晶片传递到卡盘。 加压气体的压力自动变化，使得晶片和卡盘之间的热传递响应于实际晶片温度和期望晶片温度之间的差异而变化，以保持期望的晶片温度。

    Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck
    10.
    发明授权
    Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck 失效
    通过改变晶片的下侧和卡盘之间的气体压力来控制晶片的温度

    公开(公告)号：US6140612A

    公开(公告)日：2000-10-31

    申请号：US474009

    申请日：1995-06-07

    申请人： Anwar Husain ,  Hamid Noorbakhsh

    发明人： Anwar Husain ,  Hamid Noorbakhsh

    IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/683 ,  F27B5/14

    CPC分类号： H01L21/67109

    摘要： A method and apparatus for controlling a temperature of a wafer during processing such as in a gas plasma or nonplasma environment wherein a wafer is positioned on a chuck. The wafer is heated and a pressurized gas is introduced into a space between the wafer and the chuck such that the pressurized gas transfers heat from the wafer to the chuck. Pressure of the pressurized gas is automatically varied such that heat transfer between the wafer and the chuck is varied in response to a difference between an actual wafer temperature and a desired wafer temperature to maintain the desired wafer temperature.

    摘要翻译： 一种用于在处理期间控制晶片的温度的方法和装置，例如在气体等离子体或非等离子体环境中，其中晶片位于卡盘上。 晶片被加热并且加压气体被引入到晶片和卡盘之间的空间中，使得加压气体将热量从晶片传递到卡盘。 加压气体的压力自动变化，使得晶片和卡盘之间的热传递响应于实际晶片温度和期望的晶片温度之间的差异而变化，以保持期望的晶片温度。