公开(公告)号：US20060033133A1

公开(公告)日：2006-02-16

申请号：US11053379

申请日：2005-02-08

申请人： Chi-Wen Liu ,  Kuo-Ching Chiang ,  Horng-Huei Tseng ,  Denny Tang

发明人： Chi-Wen Liu ,  Kuo-Ching Chiang ,  Horng-Huei Tseng ,  Denny Tang

IPC分类号： H01L29/94

CPC分类号： H01L27/228

摘要： A magnetic memory includes two first magnetic layers each oriented over a substrate, a second magnetic layer interposing the two first magnetic layers, and two dielectric layers each contacting the second magnetic layer and interposing the second magnetic layer and one of the two first magnetic layers. Each of the first and second magnetic layers and the dielectric layers may be oriented substantially perpendicular to the substrate or at an acute angle relative to the substrate.

摘要翻译： 磁存储器包括两个分别定向在衬底上的第一磁性层，插入两个第一磁性层的第二磁性层和与第二磁性层接触并插入第二磁性层和两个第一磁性层之一的两个电介质层。 第一和第二磁性层和电介质层中的每一个可以基本上垂直于衬底取向或相对于衬底成锐角。

公开(公告)号：US20060033136A1

公开(公告)日：2006-02-16

申请号：US10917585

申请日：2004-08-13

申请人： Chi-Wen Liu ,  Kuo-Ching Chiang ,  Horng-Huei Tseng ,  Denny Tang

发明人： Chi-Wen Liu ,  Kuo-Ching Chiang ,  Horng-Huei Tseng ,  Denny Tang

IPC分类号： G11C11/15 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/15 ,  H01L27/228

摘要： An apparatus including a pillar located over a substrate and having at least one sloped surface oriented at an acute angle relative to the substrate. The apparatus also includes an MRAM stack substantially conforming to the sloped surface, the MRAM stack thereby also oriented at the acute angle relative to the substrate. The MRAM stack may comprise a plurality of substantially planar, parallel layers each oriented at an acute angle relative to the substrate.

摘要翻译： 一种装置，包括位于衬底上方的柱，并且具有相对于衬底以锐角定向的至少一个倾斜表面。 该装置还包括基本上符合倾斜表面的MRAM堆叠，因此MRAM堆叠也相对于衬底以锐角取向。 MRAM堆叠可以包括多个基本上平面的平行层，每个平行层相对于衬底以锐角取向。

公开(公告)号：US07221584B2

公开(公告)日：2007-05-22

申请号：US11053379

申请日：2005-02-08

申请人： Chi-Wen Liu ,  Kuo-Ching Chiang ,  Horng-Huei Tseng ,  Denny D. Tang

发明人： Chi-Wen Liu ,  Kuo-Ching Chiang ,  Horng-Huei Tseng ,  Denny D. Tang

IPC分类号： G11C11/00 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L27/228

摘要： A magnetic memory includes two first magnetic layers each oriented over a substrate, a second magnetic layer interposing the two first magnetic layers, and two dielectric layers each contacting the second magnetic layer and interposing the second magnetic layer and one of the two first magnetic layers. Each of the first and second magnetic layers and the dielectric layers may be oriented substantially perpendicular to the substrate or at an acute angle relative to the substrate.

摘要翻译： 磁存储器包括两个分别定向在衬底上的第一磁性层，插入两个第一磁性层的第二磁性层和与第二磁性层接触并插入第二磁性层和两个第一磁性层之一的两个电介质层。 第一和第二磁性层和电介质层中的每一个可以基本上垂直于衬底取向或相对于衬底成锐角。

公开(公告)号：US20060043463A1

公开(公告)日：2006-03-02

申请号：US10932198

申请日：2004-09-01

申请人： Chi-Wen Liu ,  Kuo-Ching Chiang ,  Horng-Huei Tseng ,  Wen-Tin Chu

发明人： Chi-Wen Liu ,  Kuo-Ching Chiang ,  Horng-Huei Tseng ,  Wen-Tin Chu

IPC分类号： H01L29/788

CPC分类号： H01L21/28194 ,  H01L21/28202 ,  H01L27/115 ,  H01L29/42324 ,  H01L29/517 ,  H01L29/518

摘要： A semiconductor device includes a source and a drain formed in a substrate, a tunneling dielectric formed on the substrate between the source and the drain, and a floating gate disposed over the tunneling dielectric having a band-gap energy less than the energy band-gap of silicon.

摘要翻译： 半导体器件包括形成在衬底中的源极和漏极，形成在源极和漏极之间的衬底上的隧道电介质，以及设置在隧道电介质上的浮置栅极，其带隙能量小于能带隙能量 的硅。

公开(公告)号：US07319262B2

公开(公告)日：2008-01-15

申请号：US10917585

申请日：2004-08-13

申请人： Chi-Wen Liu ,  Kuo-Ching Chiang ,  Horng-Huei Tseng ,  Denny D. Tang

发明人： Chi-Wen Liu ,  Kuo-Ching Chiang ,  Horng-Huei Tseng ,  Denny D. Tang

IPC分类号： H01L29/82 ,  H01L43/00 ,  H01L21/00

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/15 ,  H01L27/228

摘要： An apparatus including a pillar located over a substrate and having at least one sloped surface oriented at an acute angle relative to the substrate. The apparatus also includes an MRAM stack substantially conforming to the sloped surface, the MRAM stack thereby also oriented at the acute angle relative to the substrate. The MRAM stack may comprise a plurality of substantially planar, parallel layers each oriented at an acute angle relative to the substrate.

摘要翻译： 一种装置，包括位于衬底上方的柱，并且具有相对于衬底以锐角定向的至少一个倾斜表面。 该装置还包括基本上符合倾斜表面的MRAM堆叠，因此MRAM堆叠也相对于衬底以锐角取向。 MRAM堆叠可以包括多个基本上平面的平行层，每个平行层相对于衬底以锐角取向。

公开(公告)号：US20060055065A1

公开(公告)日：2006-03-16

申请号：US10938480

申请日：2004-09-10

申请人： Chi-Wen Liu ,  Kuo-Ching Chiang ,  Horng-Huei Tseng ,  Syun-Ming Jang

发明人： Chi-Wen Liu ,  Kuo-Ching Chiang ,  Horng-Huei Tseng ,  Syun-Ming Jang

IPC分类号： H01L31/109

CPC分类号： H01L27/12 ,  G02F1/13452 ,  H01L27/0629 ,  H01L27/105 ,  H01L27/1052

摘要： A semiconductor chip comprises a fast device formed on a semiconductor substrate and a high-voltage metal-oxide-semiconductor transistor (HV-MOS) formed on the semiconductor substrate and an interconnect isolation feature having a low-k dielectric material disposed over the fast device and the HV-MOS in the semiconductor substrate.

摘要翻译： 半导体芯片包括形成在半导体衬底上的快速器件和形成在半导体衬底上的高压金属氧化物半导体晶体管（HV-MOS），以及布置在快速器件上的具有低k电介质材料的互连隔离特征 和半导体衬底中的HV-MOS。

公开(公告)号：US09602659B2

公开(公告)日：2017-03-21

申请号：US14662247

申请日：2015-03-19

申请人： Horng-Huei Tseng ,  Kuo-Ching Chiang

发明人： Horng-Huei Tseng ,  Kuo-Ching Chiang

IPC分类号： H04M1/725 ,  H04M3/42 ,  H04M3/22 ,  H04M1/00

CPC分类号： H04M3/42221 ,  H04M1/00 ,  H04M1/27455 ,  H04M3/2218 ,  H04M2203/301 ,  H04M2203/305 ,  H04M2250/60

摘要： A portable device with communication record recurring module is proposed. It allows phone records of the portable device recurring by the communication record recurring module. The communication record recurring module is capable of recurring phone records of the portable device. The recurring number of the phone records can be set as a per-determined number, and sequential order of the phone records is arranged by chronological sequence.

公开(公告)号：US20060046211A1

公开(公告)日：2006-03-02

申请号：US10928455

申请日：2004-08-27

申请人： Chi-Wen Liu ,  Horng-Huei Tseng ,  Chin-Hsiang Lin

发明人： Chi-Wen Liu ,  Horng-Huei Tseng ,  Chin-Hsiang Lin

IPC分类号： G03B27/52 ,  G03F7/20

CPC分类号： G03F7/70341

摘要： A method and system is disclosed for conducting immersion photolithography. The system includes at least one lens for transmitting a predetermined radiation on a predetermined substrate with a distance between the lens and the substrate shorter than a predetermined threshold, and a fluid volume in contact with the lens on its first end, and with the substrate on its second end, wherein the fluid volume is an effectively water-free fluid.

摘要翻译： 公开了用于进行浸没光刻的方法和系统。 该系统包括至少一个透镜，用于在预定基板上传输预定辐射，透镜和衬底之间的距离小于预定阈值，以及在其第一端上与透镜接触的流体体积，并且衬底在 其第二端，其中流体体积是有效的无水流体。

公开(公告)号：US20060229683A1

公开(公告)日：2006-10-12

申请号：US11089969

申请日：2005-03-25

申请人： Chao-Hsiung Wang ,  Horng-Huei Tseng ,  Denny Tang ,  Wen-Chin Lin ,  Mark Hsieh

发明人： Chao-Hsiung Wang ,  Horng-Huei Tseng ,  Denny Tang ,  Wen-Chin Lin ,  Mark Hsieh

IPC分类号： A61N1/00

CPC分类号： G11C11/16 ,  G11C5/025 ,  H01L23/5225 ,  H01L27/222 ,  H01L43/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A circuit with an inter-module radiation interference shielding mechanism is disclosed. The circuit includes a circuit module producing a radiation field. At least one radiation shielding module is situated between the circuit module and another module that is vulnerable to the interference of the radiation field. The shielding module is substantially tangential to the radiation field.

公开(公告)号：US07183617B2

公开(公告)日：2007-02-27

申请号：US11060000

申请日：2005-02-17

申请人： Chao-Hsiung Wang ,  Horng-Huei Tseng ,  Denny Tang

发明人： Chao-Hsiung Wang ,  Horng-Huei Tseng ,  Denny Tang

IPC分类号： H01L27/14

CPC分类号： H01L23/552 ,  H01L2224/16 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01025 ,  H01L2924/01087 ,  H01L2924/09701 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/3025 ,  H01L2224/0401

摘要： A magnetic shielding device is provided for protecting at least one magnetically sensitive component on a substrate according to embodiments of the present invention. The device comprises a first shield having a top portion, and one or more side portions, wherein the top and side portions along with the substrate encloses the magnetic sensitive component within for protecting the same from an external magnetic field, and wherein the magnetic shielding device contains at least two magnetic shielding materials with one having a relatively higher magnetic permeability property but lower magnetic saturation property while the other having a relatively lower magnetic permeability property but higher magnetic saturation property.

摘要翻译： 根据本发明的实施例，提供了一种磁屏蔽装置，用于保护基板上的至少一个磁敏部件。 该装置包括具有顶部部分和一个或多个侧部部分的第一屏蔽件，其中顶部和侧部与基板一起包围磁敏部件，以便将其与外部磁场保护起来，并且其中磁屏蔽装置 包含至少两个磁屏蔽材料，具有较高磁导率性能但具有较低磁饱和性能的磁屏蔽材料，而另一种具有较低的磁导率性能但较高的磁饱和性能。