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    Post-CMP removal of surface contaminants from silicon wafer
    1.
    发明授权
    Post-CMP removal of surface contaminants from silicon wafer 有权
    CMP后移除表面污染物

    公开(公告)号：US06696361B2

    公开(公告)日：2004-02-24

    申请号：US09854006

    申请日：2001-05-10

    申请人： Shao-Chung Hu ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Yung-Tsung Wei

    发明人： Shao-Chung Hu ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Yung-Tsung Wei

    IPC分类号： H01L214763

    CPC分类号： H01L21/02074 ,  H01L21/3212

    摘要： A method of removing contaminants from a silicon wafer after chemical-mechanical polishing (CMP). After a copper chemical-mechanical polishing and a subsequent barrier chemical-mechanical polishing operation, an aqueous solution of ozone in de-ionized water is applied to clean the silicon wafer so that contaminants on the wafer are removed. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after copper and barrier CMP and then the wafer is cleaned using a chemical solution or de-ionized water. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after both copper-CMP and barrier-CMP and then the wafer is cleaned using a chemical solution or de-ionized water.

    摘要翻译： 化学机械抛光（CMP）后从硅晶片去除污染物的方法。 在铜化学机械抛光和随后的屏障化学 - 机械抛光操作之后，施加去离子水中的臭氧水溶液以清洁硅晶片，从而去除晶片上的污染物。 或者，在铜和阻挡CMP之后进行臭氧/去离子水缓冲抛光工艺，然后使用化学溶液或去离子水清洁晶片。 或者，在铜CMP和阻挡CMP两者之后进行臭氧/去离子水缓冲抛光工艺，然后使用化学溶液或去离子水清洁晶片。

    Control system for in-situ feeding back a polish profile
    2.
    发明授权
    Control system for in-situ feeding back a polish profile 失效
    用于原位反馈抛光轮廓的控制系统

    公开(公告)号：US06706140B2

    公开(公告)日：2004-03-16

    申请号：US09682486

    申请日：2001-09-07

    申请人： Chia-Lin Hsu ,  Shao-Chung Hu ,  Teng-Chun Tsai

    发明人： Chia-Lin Hsu ,  Shao-Chung Hu ,  Teng-Chun Tsai

    IPC分类号： B24B4900

    CPC分类号： B24B37/04 ,  B24B49/10 ,  B24B57/02 ,  H01L21/30625

    摘要： A chemical mechanical polishing (CMP) machine has a polish platen, having at least a first ring-shaped region and a second ring-shaped region. A control system for in-situ feeding back a polish profile of the CMP machine has at least a first sensor and a second sensor, respectively installed in the first and the second ring-shaped regions, and a control unit electrically connected to the first sensor and the second sensor for comparing the polish rates of portions of the wafer over the first and the second ring-shaped regions, respectively, according to signals of the first and the second sensors, and adjusting amounts of a slurry supplied by first and second slurry pump valves, corresponding to the first and second ring-shaped regions, according to a predetermined process, or adjusting forces loaded to the first and second regions of the wafer according to the predetermined process.

    摘要翻译： 化学机械抛光（CMP）机器具有抛光台板，具有至少第一环形区域和第二环形区域。 用于原位反馈CMP机的抛光轮廓的控制系统具有分别安装在第一和第二环形区域中的至少第一传感器和第二传感器，以及电连接到第一传感器的控制单元 以及第二传感器，用于根据第一和第二传感器的信号分别比较第一和第二环形区域上的部分晶片的抛光速率，以及调节由第一和第二浆料供应的浆料的量 根据预定过程对应于第一和第二环形区域的泵阀，或根据预定过程加载到晶片的第一和第二区域的调节力。

    Method of removing contaminants from a silicon wafer after chemical-mechanical polishing operation
    3.
    发明授权
    Method of removing contaminants from a silicon wafer after chemical-mechanical polishing operation 有权
    在化学机械抛光操作后从硅晶片去除污染物的方法

    公开(公告)号：US07232752B2

    公开(公告)日：2007-06-19

    申请号：US10603924

    申请日：2003-06-24

    申请人： Shao-Chung Hu ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Yung-Tsung Wei

    发明人： Shao-Chung Hu ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Yung-Tsung Wei

    IPC分类号： H01L21/4763 ,  H01L21/302

    CPC分类号： H01L21/3212 ,  H01L21/02074

    摘要： A method of removing contaminants from a silicon wafer after chemical-mechanical polishing (CMP). After a copper chemical-mechanical polishing and a subsequent barrier chemical-mechanical polishing operation, an aqueous solution of ozone in de-ionized water is applied to clean the silicon wafer so that contaminants on the wafer are removed. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after copper and barrier CMP and then the wafer is cleaned using a chemical solution or de-ionized water. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after both copper-CMP and barrier-CMP and then the wafer is cleaned using a chemical solution or de-ionized water.

    摘要翻译： 化学机械抛光（CMP）后从硅晶片去除污染物的方法。 在铜化学机械抛光和随后的屏障化学 - 机械抛光操作之后，施加去离子水中的臭氧水溶液以清洁硅晶片，从而去除晶片上的污染物。 或者，在铜和阻挡CMP之后进行臭氧/去离子水缓冲抛光工艺，然后使用化学溶液或去离子水清洁晶片。 或者，在铜CMP和阻挡CMP两者之后进行臭氧/去离子水缓冲抛光工艺，然后使用化学溶液或去离子水清洁晶片。

    Poly opening polish process
    6.
    发明授权
    Poly opening polish process 有权
    多开口抛光工艺

    公开(公告)号：US08513128B2

    公开(公告)日：2013-08-20

    申请号：US13162776

    申请日：2011-06-17

    申请人： Chun-Wei Hsu ,  Po-Cheng Huang ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Chih-Hsun Lin ,  Chang-Hung Kung ,  Chia-His Chen ,  Yen-Ming Chen

    发明人： Chun-Wei Hsu ,  Po-Cheng Huang ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Chih-Hsun Lin ,  Chang-Hung Kung ,  Chia-His Chen ,  Yen-Ming Chen

    IPC分类号： H01L21/304 ,  H01L21/306 ,  B44C1/22

    CPC分类号： H01L21/31053 ,  H01L21/02065 ,  H01L29/517 ,  H01L29/66545

    摘要： A poly opening polish process includes the following steps. A semi-finished semiconductor component is provided. The semi-finished semiconductor component includes a substrate, a gate disposed on the substrate, and a dielectric layer disposed on the substrate and covering the gate. A first polishing process is applied onto the dielectric layer. A second polishing process is applied to the gate. The second polishing process utilizes a wetting solution including a water soluble polymer surfactant, an alkaline compound and water. The poly opening polish process can effectively remove an oxide residue formed in the chemical mechanical polish, thereby improving the performance of the integrated circuit and reducing the production cost of the integrated circuit.

    摘要翻译： 多孔抛光工艺包括以下步骤。 提供半成品半导体元件。 半成品半导体部件包括基板，设置在基板上的栅极和设置在基板上并覆盖栅极的电介质层。 将第一抛光工艺施加到电介质层上。 第二次抛光工艺应用于浇口。 第二抛光工艺利用包含水溶性聚合物表面活性剂，碱性化合物和水的润湿溶液。 多孔抛光工艺可有效去除化学机械抛光中形成的氧化物残留物，从而提高集成电路的性能，降低集成电路的生产成本。

    SEMICONDUCTOR PROCESS
    7.
    发明申请
    SEMICONDUCTOR PROCESS 有权
    半导体工艺

    公开(公告)号：US20130052825A1

    公开(公告)日：2013-02-28

    申请号：US13220692

    申请日：2011-08-30

    申请人： Po-Cheng Huang ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Chun-Wei Hsu ,  Yen-Ming Chen ,  Chih-Hsun Lin ,  Chang-Hung Kung

    发明人： Po-Cheng Huang ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Chun-Wei Hsu ,  Yen-Ming Chen ,  Chih-Hsun Lin ,  Chang-Hung Kung

    IPC分类号： H01L21/306

    CPC分类号： H01L21/3212 ,  H01L21/3105 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/7684 ,  H01L21/823835 ,  H01L29/665

    摘要： A semiconductor process includes the following steps. A first gate structure and a second gate structure are formed on a substrate, wherein the top of the first gate structure includes a cap layer, so that the vertical height of the first gate structure is higher than the vertical height of the second gate structure. An interdielectric layer is formed on the substrate. A first chemical mechanical polishing process is performed to expose the top surface of the cap layer. A second chemical mechanical polishing process is performed to expose the top surface of the second gate structure or an etching process is performed to remove the interdielectric layer located on the second gate structure. A second chemical mechanical polishing process is then performed to remove the cap layer.

    摘要翻译： 半导体工艺包括以下步骤。 第一栅极结构和第二栅极结构形成在基板上，其中第一栅极结构的顶部包括盖层，使得第一栅极结构的垂直高度高于第二栅极结构的垂直高度。 在基板上形成介电层。 执行第一化学机械抛光工艺以暴露盖层的顶表面。 执行第二化学机械抛光工艺以暴露第二栅极结构的顶表面，或执行蚀刻工艺以去除位于第二栅极结构上的介电层。 然后执行第二化学机械抛光工艺以除去盖层。

    CHEMICAL MECHANICAL POLISHING PROCESS
    8.
    发明申请
    CHEMICAL MECHANICAL POLISHING PROCESS 有权
    化学机械抛光工艺

    公开(公告)号：US20060057944A1

    公开(公告)日：2006-03-16

    申请号：US10711392

    申请日：2004-09-16

    申请人： Chia-Lin Hsu ,  Teng-Chun Tsai

    发明人： Chia-Lin Hsu ,  Teng-Chun Tsai

    IPC分类号： B24B1/00

    CPC分类号： H01L21/7684 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/76843

    摘要： A high throughput chemical mechanical polishing process is disclosed. A substrate having thereon a top bulk metal layer and a lower barrier layer is prepared. The top bulk metal layer is polished at a substantial constant removal rate to expose the barrier layer by utilizing a first platen and first slurry being selective to the barrier layer. The exposed barrier layer is then polished by using a second platen and second slurry. The first slurry has a copper to barrier polishing selectivity of greater than 30.

    摘要翻译： 公开了高通量化学机械抛光工艺。 制备其上具有顶部本体金属层和下部阻挡层的基板。 顶部本体金属层以基本恒定的去除速率被抛光，以通过利用第一压板和对阻挡层有选择性的第一浆料来暴露阻挡层。 然后通过使用第二压板和第二浆料来抛光暴露的阻挡层。 第一种浆料具有大于30的铜屏障抛光选择性。

    Method of forming a dual damascene via by using a metal hard mask layer
    9.
    发明授权
    Method of forming a dual damascene via by using a metal hard mask layer 有权
    通过使用金属硬掩模层形成双镶嵌过孔的方法

    公开(公告)号：US06831013B2

    公开(公告)日：2004-12-14

    申请号：US09986929

    申请日：2001-11-13

    申请人： Teng-Chun Tsai ,  Chia-Lin Hsu

    发明人： Teng-Chun Tsai ,  Chia-Lin Hsu

    IPC分类号： H01L21302

    CPC分类号： H01L21/76811 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/76813

    摘要： This invention relates to a method of forming a dual damascene via, in particular to a method of forming a dual damascene via by using a metal hard mask layer. The present invention uses a metal layer to be a hard mask layer to make the surface of the isolation layer become a level and smooth surface and not become a rounding convex and to prevent the via being connected with others vias to cause the leakage defects after forming the shape of the via.

    摘要翻译： 本发明涉及一种形成双镶嵌层的方法，特别涉及通过使用金属硬掩模层形成双镶嵌过孔的方法。 本发明使用金属层作为硬掩模层，使得隔离层的表面变得水平和光滑的表面，并且不变成圆形凸起，并且防止通孔与其它通孔连接，以在成形之后引起泄漏缺陷 通孔的形状。

    Chemical mechanical polishing method for copper
    10.
    发明授权
    Chemical mechanical polishing method for copper 有权

    公开(公告)号：US06616510B2

    公开(公告)日：2003-09-09

    申请号：US09735323

    申请日：2000-12-12

    申请人： Chia-Lin Hsu ,  Teng-Chun Tsai ,  Yung-Tsung Wei ,  Ming-Sheng Yang

    发明人： Chia-Lin Hsu ,  Teng-Chun Tsai ,  Yung-Tsung Wei ,  Ming-Sheng Yang

    IPC分类号： H01L21465

    CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/02

    摘要： A chemical-mechanical polishing method for polishing a copper oxide layer and a copper layer. The copper oxide layer above the copper layer is first polished using an aqueous solution having a high concentration of polishing particles/chelating agent. The copper layer is then polished using a polishing slurry having a low concentration of polishing particles/chelating agent or the polishing slurry free of polishing particles/chelating agent. Alternatively, the copper oxide layer is polished using a mixture of the aqueous solution and the polishing slurry. After the copper oxide layer is removed, the copper layer is polished using the polishing slurry alone.