公开(公告)号：US11419429B2

公开(公告)日：2022-08-23

申请号：US16816301

申请日：2020-03-12

Applicant: Chia-Yen Huang

Inventor： Chia-Yen Huang

IPC: A47C20/04

Abstract: An adjustable bed frame includes a frame, a front support unit connected to the front end of the frame, and a rear support unit connected to the rear end of the frame. The front support unit includes a first top connected to the front end of the frame, and a first bottom contacting a first plane. The rear support unit includes a second top connected to the rear end of the frame, and a second bottom contacting a second plane. An activation device is connected between the rear support unit and the frame. The activation device drives the rear support unit or the second bottom to move or rotate relative to the frame to change the shortest distance between the second bottom and the frame, and to change the distance between the frame and the second plane. The inclination between the frame and the first and second planes is adjusted.

公开(公告)号：US20120273796A1

公开(公告)日：2012-11-01

申请号：US13459963

申请日：2012-04-30

Applicant: Yuji Zhao ,  Shinichi Tanaka ,  Chia-Yen Huang ,  Daniel F. Feezell ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

Inventor： Yuji Zhao ,  Shinichi Tanaka ,  Chia-Yen Huang ,  Daniel F. Feezell ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/00

CPC classification number: H01L33/16 ,  H01L33/0075 ,  H01L33/32

Abstract: A Group-III nitride optoelectronic device fabricated on a semipolar (20-2-1) plane of a Gallium Nitride (GaN) substrate is characterized by a high Indium uptake and a high polarization ratio.

Abstract translation: 在氮化镓（GaN）衬底的半极（20-2-1）平面上制造的III族氮化物光电子器件的特征在于高的铟吸收和高的偏振比。

公开(公告)号：US20120107991A1

公开(公告)日：2012-05-03

申请号：US13279121

申请日：2011-10-21

Applicant: Chia-Yen Huang ,  Shuji Nakamura ,  Steven P. DenBaars ,  James S. Speck

Inventor： Chia-Yen Huang ,  Shuji Nakamura ,  Steven P. DenBaars ,  James S. Speck

IPC: H01L33/06 ,  H01S5/343 ,  H01L21/18

CPC classification number: H01L33/08 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/309 ,  H01S5/34333

Abstract: A III-nitride-based light emitting device having a multiple quantum well (MQW) structure and a method for fabricating the device, wherein at least one barrier in the MQW structure is doped with magnesium (Mg). The Mg doping of the barrier is accomplished by introducing a bis(cyclopentadienyl)magnesium (Cp2Mg) flow during growth of the barrier using metalorganic chemical vapor deposition (MOCVD). The barriers of the MQW structure may be undoped, fully Mg-doped or partially Mg-doped. When the barrier is partially Mg-doped, only portions of the barrier are Mg-doped to prevent Mg diffusion into quantum wells of the MQW structure. The Mg-doped barriers preferably are high Al composition AlGaN barriers in nonpolar or semipolar devices.

Abstract translation: 具有多量子阱（MQW）结构的III族氮化物系发光器件及其制造方法，其中MQW结构中的至少一个势垒掺杂有镁（Mg）。 通过使用金属有机化学气相沉积（MOCVD）在势垒生长期间引入双（环戊二烯基）镁（Cp2Mg）流来实现势垒的Mg掺杂。 MQW结构的障碍可以是未掺杂的，完全Mg掺杂的或部分Mg掺杂的。 当势垒部分Mg掺杂时，只有部分势垒是Mg掺杂的，以防止Mg扩散到MQW结构的量子阱中。 Mg掺杂的栅极优选是非极性或半极性器件中的高Al组分AlGaN屏障。

公开(公告)号：US20110170569A1

公开(公告)日：2011-07-14

申请号：US12908478

申请日：2010-10-20

Applicant: Anurag Tyagi ,  Robert M. Farrell ,  Chia-Yen Huang ,  Po Shan Hsu ,  Daniel A. Haeger ,  Kathryn M. Kelchner ,  Hiroaki Ohta ,  Shuji Nakamura ,  Steven P. DenBaars ,  James S. Speck

Inventor： Anurag Tyagi ,  Robert M. Farrell ,  Chia-Yen Huang ,  Po Shan Hsu ,  Daniel A. Haeger ,  Kathryn M. Kelchner ,  Hiroaki Ohta ,  Shuji Nakamura ,  Steven P. DenBaars ,  James S. Speck

IPC: H01S5/323 ,  H01L33/02 ,  H01L33/60 ,  H01S5/00 ,  H01S5/183

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01S5/0014 ,  H01S5/06216 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211

Abstract: A semipolar {20-21} III-nitride based laser diode employing a cavity with one or more etched facet mirrors. The etched facet mirrors provide an ability to arbitrarily control the orientation and dimensions of the cavity or stripe of the laser diode, thereby enabling control of electrical and optical properties of the laser diode.

Abstract translation: 采用具有一个或多个蚀刻小面镜的空腔的半极性{20-21} III族氮化物基激光二极管。 蚀刻刻面镜提供了任意控制激光二极管的空腔或条纹的取向和尺寸的能力，从而能够控制激光二极管的电学和光学性质。

公开(公告)号：US11116311B2

公开(公告)日：2021-09-14

申请号：US16197393

申请日：2018-11-21

Applicant: Chia-Yen Huang

Inventor： Chia-Yen Huang

IPC: A47B9/04 ,  A47B9/20 ,  F16B7/14

Abstract: A telescopic tube assembly includes an outer tube and an inner tube which is telescopically inserted in the outer tube. A first stabilizing unit and a second stabilizing unit respectively located in a gap between the inner and outer tubes to make the inner tube stably moved relative to the outer tube. The first stabilizing unit includes two plates. The outer surface of each of the two plates is in contact with the inner surface of the outer tube, and the inner surface of each of the two plates is in contact with the outer surface of the inner tube. The inner tube is assembled to the outer tube by the first and second stabilizing units.

公开(公告)号：US10531732B1

公开(公告)日：2020-01-14

申请号：US16387573

申请日：2019-04-18

Applicant: Chia-Yen Huang

Inventor： Chia-Yen Huang

IPC: A47B9/04 ,  A47B9/20

Abstract: A table includes a table top with at least one collapsible leg which includes a top tube, a middle tube and a bottom tube. A connector is connected to the underside of the table top and the top end of the outer tube. An inner threaded rod is connected to a motor which is connected to the connector. An outer threaded rod is movably mounted to outside of the inner threaded rod. A top nut is fixed to the middle tube and threadedly connected to the inner threaded rod. A bottom nut is connected to the bottom tube and threadedly connected to the outer threaded rod. When the motor drives the inner threaded rod, the outer threaded rod is moved relative to the inner threaded rod so that the middle tube moves relative to the top tube, and the bottom tube moves relative to the middle tube.