LED structure, manufacturing method thereof and LED module
    3.
    发明授权
    LED structure, manufacturing method thereof and LED module 有权
    LED结构,其制造方法和LED模块

    公开(公告)号:US08304785B2

    公开(公告)日:2012-11-06

    申请号:US12566943

    申请日:2009-09-25

    IPC分类号: H01L27/15

    摘要: A light emitting diode (LED) structure, a manufacturing method thereof and a LED module are provided. The LED structure has temperature sensing function. The LED structure comprises a composite substrate and an LED. The composite substrate comprises a diode structure whose P-type semiconductor region or N-type semiconductor region has a predetermined doping concentration. The diode structure is a temperature sensor, and the sensitivity of the temperature sensor is based on the predetermined doping concentration. The LED is disposed on the composite substrate. The diode structure is used for sensing the heat emitted from the LED.

    摘要翻译: 提供了一种发光二极管(LED)结构,其制造方法和LED模块。 LED结构具有温度检测功能。 LED结构包括复合衬底和LED。 复合衬底包括其P型半导体区域或N型半导体区域具有预定掺杂浓度的二极管结构。 二极管结构是温度传感器,温度传感器的灵敏度基于预定的掺杂浓度。 LED设置在复合基板上。 二极管结构用于感测从LED发出的热量。

    LIGHT DEVICES
    4.
    发明申请
    LIGHT DEVICES 有权
    光设备

    公开(公告)号:US20130169167A1

    公开(公告)日:2013-07-04

    申请号:US13411242

    申请日:2012-03-02

    IPC分类号: H05B37/02

    CPC分类号: H05B33/0827 H05B33/0803

    摘要: An light device, includes a plurality of first light cells arranged axisymmetrically about an axis; a plurality of second light cells arranged axisymmetrically around the axis; and a controller coupled to a brightness adjust unit, and determines whether to activate the first light cells and second light cells according to a brightness adjust value of the brightness adjust unit, wherein the average distance between the first light cells and the axis is shorter than the average distance between the second light cells and the axis.

    摘要翻译: 一种光装置,包括围绕轴线对称布置的多个第一光单元; 围绕所述轴线对称地布置的多个第二光单元; 以及耦合到亮度调节单元的控制器,并且根据亮度调节单元的亮度调整值来确定是否激活第一光单元和第二光单元,其中第一光单元和轴之间的平均距离短于 第二光单元和轴之间的平均距离。

    LED Structure, Manufacturing Method Thereof and LED Module
    5.
    发明申请
    LED Structure, Manufacturing Method Thereof and LED Module 有权
    LED结构及其制造方法和LED模块

    公开(公告)号:US20100084958A1

    公开(公告)日:2010-04-08

    申请号:US12566943

    申请日:2009-09-25

    IPC分类号: H01J7/24 H01L33/00

    摘要: A light emitting diode (LED) structure, a manufacturing method thereof and a LED module are provided. The LED structure has temperature sensing function. The LED structure comprises a composite substrate and an LED. The composite substrate comprises a diode structure whose P-type semiconductor region or N-type semiconductor region has a predetermined doping concentration. The diode structure is a temperature sensor, and the sensitivity of the temperature sensor is based on the predetermined doping concentration. The LED is disposed on the composite substrate. The diode structure is used for sensing the heat emitted from the LED.

    摘要翻译: 提供了一种发光二极管(LED)结构,其制造方法和LED模块。 LED结构具有温度检测功能。 LED结构包括复合衬底和LED。 复合衬底包括其P型半导体区域或N型半导体区域具有预定掺杂浓度的二极管结构。 二极管结构是温度传感器,温度传感器的灵敏度基于预定的掺杂浓度。 LED设置在复合基板上。 二极管结构用于感测从LED发出的热量。

    Light devices
    6.
    发明授权
    Light devices 有权
    轻装置

    公开(公告)号:US09210754B2

    公开(公告)日:2015-12-08

    申请号:US13411242

    申请日:2012-03-02

    IPC分类号: H05B37/02 H05B33/08

    CPC分类号: H05B33/0827 H05B33/0803

    摘要: An light device, includes a plurality of first light cells arranged axisymmetrically about an axis; a plurality of second light cells arranged axisymmetrically around the axis; and a controller coupled to a brightness adjust unit, and determines whether to activate the first light cells and second light cells according to a brightness adjust value of the brightness adjust unit, wherein the average distance between the first light cells and the axis is shorter than the average distance between the second light cells and the axis.

    摘要翻译: 一种光装置,包括围绕轴线对称布置的多个第一光单元; 围绕所述轴线对称地布置的多个第二光单元; 以及耦合到亮度调节单元的控制器,并且根据亮度调节单元的亮度调整值来确定是否激活第一光单元和第二光单元,其中第一光单元和轴之间的平均距离短于 第二光单元和轴之间的平均距离。

    Wafer-level light emitting diode structure, light emitting diode chip, and method for forming the same
    10.
    发明授权
    Wafer-level light emitting diode structure, light emitting diode chip, and method for forming the same 有权
    晶圆级发光二极管结构,发光二极管芯片及其形成方法

    公开(公告)号:US09178107B2

    公开(公告)日:2015-11-03

    申请号:US13197677

    申请日:2011-08-03

    IPC分类号: H01L33/00 H01L33/20 H01L33/44

    摘要: A method for fabricating a wafer-level light emitting diode structure is provided. The method includes: providing a substrate, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are sequentially disposed on the substrate; subjecting the first semiconductor layer, the light emitting layer, and the second semiconductor layer with a patterning process to form a first depressed portion, a second depressed portion, a stacked structure disposed on the second depressed portion and a remained first semiconductor layer disposed on the depressed portion, wherein the stacked structure comprises a patterned second semiconductor layer, a patterned emitting layer, and a patterned first semiconductor layer; forming a first electrode on the remained first semiconductor layer of the first depressed portion; and forming a second electrode correspondingly disposed on the patterned second semiconductor layer of the second depressed portion.

    摘要翻译: 提供了一种制造晶片级发光二极管结构的方法。 该方法包括:提供衬底,其中第一半导体层,发光层和第二半导体层依次设置在衬底上; 通过图案化工艺对第一半导体层,发光层和第二半导体层进行处理,以形成设置在第二凹部上的第一凹部,第二凹部,层叠结构,以及设置在第二凹部 凹陷部分,其中所述堆叠结构包括图案化的第二半导体层,图案化发光层和图案化的第一半导体层; 在第一凹部的残留的第一半导体层上形成第一电极; 以及形成相应地设置在所述第二凹陷部分的图案化的第二半导体层上的第二电极。