公开(公告)号：US20120181669A1

公开(公告)日：2012-07-19

申请号：US13409517

申请日：2012-03-01

申请人： Chin-Ming LIN ,  Chia-hung Huang ,  Chi-Ming Yang ,  Chin-Hsiang Lin ,  Yung-Cheng Chen ,  Chih-Wei Lin

发明人： Chin-Ming LIN ,  Chia-hung Huang ,  Chi-Ming Yang ,  Chin-Hsiang Lin ,  Yung-Cheng Chen ,  Chih-Wei Lin

IPC分类号： H01L23/544 ,  G06F17/50

CPC分类号： G03F7/70433

摘要： A method includes establishing an initial shot layout in which a number of shots are arranged in vertically aligned columns and horizontally aligned rows to cover a semiconductor wafer. At least one of a row of shots or a column of shots is shifted relative to an adjacent row or column of shots to establish at least one additional shot layout that differs from the initial shot layout in that shots in the at least one shifted row or column of shots are not aligned with the shots in the adjacent row or column of shots with which they were aligned in the initial shot layout. One of the initial shot layout and the at least one additional shot layout is selected as a final shot layout. The wafer is exposed to light using the final shot layout.

摘要翻译： 一种方法包括建立初始照片布局，其中多个照片布置在垂直排列的列和水平排列的行中以覆盖半导体晶片。 一排照片或一列照片中的至少一列相对于相邻的行或列发射位移，以建立与至少一个移位行中的拍摄中的初始镜头布局不同的至少一个附加镜头布局，或 一列照片不与在初始镜头布局中对齐的相邻行或照片列中的镜头对齐。 选择初始镜头布局和至少一个附加镜头布局之一作为最终镜头布局。 使用最终镜头布局将晶片曝光。

公开(公告)号：US08843860B2

公开(公告)日：2014-09-23

申请号：US13409517

申请日：2012-03-01

申请人： Chin-Ming Lin ,  Chia-hung Huang ,  Chi-Ming Yang ,  Chin-Hsiang Lin ,  Yung-Cheng Chen ,  Chih-Wei Lin

发明人： Chin-Ming Lin ,  Chia-hung Huang ,  Chi-Ming Yang ,  Chin-Hsiang Lin ,  Yung-Cheng Chen ,  Chih-Wei Lin

IPC分类号： G06F17/50 ,  G03F7/20

CPC分类号： G03F7/70433

摘要： A method includes establishing an initial shot layout in which a number of shots are arranged in vertically aligned columns and horizontally aligned rows to cover a semiconductor wafer. At least one of a row of shots or a column of shots is shifted relative to an adjacent row or column of shots to establish at least one additional shot layout that differs from the initial shot layout in that shots in the at least one shifted row or column of shots are not aligned with the shots in the adjacent row or column of shots with which they were aligned in the initial shot layout. One of the initial shot layout and the at least one additional shot layout is selected as a final shot layout. The wafer is exposed to light using the final shot layout.

摘要翻译： 一种方法包括建立初始照片布局，其中多个照片布置在垂直排列的列和水平排列的行中以覆盖半导体晶片。 一排照片或一列照片中的至少一列相对于相邻的行或列发射位移，以建立与至少一个移位行中的拍摄中的初始镜头布局不同的至少一个附加镜头布局，或 一列照片不与在初始镜头布局中对齐的相邻行或照片列中的镜头对齐。 选择初始镜头布局和至少一个附加镜头布局之一作为最终镜头布局。 使用最终镜头布局将晶片曝光。

公开(公告)号：US08871605B2

公开(公告)日：2014-10-28

申请号：US13449721

申请日：2012-04-18

申请人： Chin-Ming Lin ,  Wan-Lai Chen ,  Chia-Hung Huang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

发明人： Chin-Ming Lin ,  Wan-Lai Chen ,  Chia-Hung Huang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC分类号： H01L21/76

CPC分类号： H01L21/681 ,  H01L21/268 ,  H01L21/67282 ,  H01L21/683 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2223/54493 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of orienting a semiconductor wafer. The method includes rotating a wafer about a central axis; exposing a plurality of edge portions of the rotating wafer to light having a predetermined wavelength from one or more light sources; detecting a subsurface mark in one of the plurality of edge portions of the rotating wafer; and orienting the wafer using the detected subsurface mark as a reference.

摘要翻译： 一种定向半导体晶片的方法。 该方法包括围绕中心轴旋转晶片; 将旋转晶片的多个边缘部分暴露于来自一个或多个光源的具有预定波长的光; 检测所述旋转晶片的所述多个边缘部分之一中的地下标记; 并使用检测到的地下标记作为参考来定向晶片。

公开(公告)号：US10857649B2

公开(公告)日：2020-12-08

申请号：US13240856

申请日：2011-09-22

申请人： Bo-I Lee ,  Huang Soon Kang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

发明人： Bo-I Lee ,  Huang Soon Kang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC分类号： B24B37/32 ,  B24B9/06

摘要： The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a polishing head that is operable to perform a polishing process to a wafer. The apparatus includes a retaining ring that is rotatably coupled to the polishing head. The retaining ring is operable to secure the wafer to be polished. The apparatus includes a soft material component located within the retaining ring. The soft material component is softer than silicon. The soft material component is operable to grind a bevel region of the wafer during the polishing process. The apparatus includes a spray nozzle that is rotatably coupled to the polishing head. The spray nozzle is operable to dispense a cleaning solution to the bevel region of the wafer during the polishing process.

公开(公告)号：US09299593B2

公开(公告)日：2016-03-29

申请号：US13210998

申请日：2011-08-16

申请人： Ming-Hsi Yeh ,  Kuo-Sheng Chuang ,  Ying-Hsueh Chang Chien ,  Chi-Ming Yang ,  Chin-Hsiang Lin

发明人： Ming-Hsi Yeh ,  Kuo-Sheng Chuang ,  Ying-Hsueh Chang Chien ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC分类号： H01L21/00 ,  H01L21/67 ,  B08B3/02

CPC分类号： H01L21/67051 ,  B08B3/024

摘要： A method includes providing a wafer and providing a first spray bar spaced a distance from the wafer. A first spray is dispensed from the first spray bar onto a first portion (e.g., half) of the wafer. Thereafter, the wafer is rotated. A second spray is dispensed from the first spray bar onto a second portion (e.g., half) of the rotated wafer. In embodiments, a plurality of spray bars are positioned above the wafer. One or more of the spray bars may be tunable in separation distance and/or angle of dispensing.

摘要翻译： 一种方法包括提供晶片并提供与晶片间隔开一定距离的第一喷杆。 将第一喷雾从第一喷雾棒分配到晶片的第一部分（例如一半）上。 此后，晶片旋转。 从第一喷杆将第二喷雾分配到旋转的晶片的第二部分（例如，一半）上。 在实施例中，多个喷杆位于晶片上方。 喷雾棒中的一个或多个可以以分离距离和/或分配角度来调节。

公开(公告)号：US08926762B2

公开(公告)日：2015-01-06

申请号：US13226216

申请日：2011-09-06

申请人： Ying-Hsueh Chang Chien ,  Shao-Yen Ku ,  Ming-Hsi Yeh ,  Chi-Ming Yang ,  Chin-Hsiang Lin

发明人： Ying-Hsueh Chang Chien ,  Shao-Yen Ku ,  Ming-Hsi Yeh ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC分类号： B08B3/04 ,  B08B3/12

CPC分类号： B08B3/12 ,  B08B3/02 ,  H01L21/67028 ,  H01L21/6704

摘要： Methods and apparatus for a movable megasonic wafer probe. A method is disclosed including positioning a movable probe on a wafer surface, the movable probe having an open bottom portion that exposes a portion of the wafer surface; applying a liquid onto the wafer surface through a bottom portion of the movable probe; and moving the movable probe at a predetermined scan speed to traverse the wafer surface, applying the liquid to the wafer surface while moving over the wafer surface. In additional embodiments the method includes providing a transducer for applying megasonic energy to the wafer surface. Apparatus embodiments are disclosed including the movable megasonic wafer probe.

摘要翻译： 移动式超声波晶片探针的方法和装置。 公开了一种方法，包括将可移动探针定位在晶片表面上，所述可移动探针具有暴露晶片表面的一部分的开放底部; 通过可移动探针的底部将液体施加到晶片表面上; 并且以预定的扫描速度移动可移动探针以穿过晶片表面，同时在晶片表面上移动时将液体施加到晶片表面。 在另外的实施例中，该方法包括提供用于将兆声波能量施加到晶片表面的换能器。 公开了包括可移动兆声晶片探针的装置实施例。

公开(公告)号：US08664622B2

公开(公告)日：2014-03-04

申请号：US13443994

申请日：2012-04-11

申请人： Chih-Hong Hwang ,  Chun-Lin Chang ,  Chi-Ming Yang ,  Chin-Hsiang Lin ,  Wen-Yu Ku

发明人： Chih-Hong Hwang ,  Chun-Lin Chang ,  Chi-Ming Yang ,  Chin-Hsiang Lin ,  Wen-Yu Ku

IPC分类号： H01J27/00 ,  A61N5/00 ,  G21G5/00

CPC分类号： C23C14/48 ,  H01J27/08 ,  H01J37/08 ,  H01J2237/082 ,  H01J2237/31701

摘要： An apparatus comprises an ionization chamber for providing ions during a process of ion implantation, and an electron beam source device inside the ionization chamber. The electron beam source device comprises a field emission array having a plurality of emitters for generating electrons in vacuum under an electric field.

摘要翻译： 一种装置包括用于在离子注入过程中提供离子的电离室和电离室内的电子束源装置。 电子束源装置包括具有多个用于在电场下在真空中产生电子的发射器的场致发射阵列。

公开(公告)号：US08541270B2

公开(公告)日：2013-09-24

申请号：US13269107

申请日：2011-10-07

申请人： Ming-Hsi Yeh ,  Chi-Ming Yang ,  Chin-Hsiang Lin

发明人： Ming-Hsi Yeh ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC分类号： H01L21/336

CPC分类号： H01L29/66818 ,  H01L29/66795

摘要： Semiconductor materials, particularly III-V materials used to form, e.g., a finlike structure can suffer structural damage during chemical mechanical polishing steps. This damage can be reduced or eliminated by oxidizing the damaged surface of the material and then etching away the oxidized material. The etching step can be accomplished simultaneously with a step of etching back a patterned oxide layers, such as a shallow trench isolation layer.

公开(公告)号：US08237231B2

公开(公告)日：2012-08-07

申请号：US13327992

申请日：2011-12-16

申请人： Kuo Bin Huang ,  Ssu-Yi Li ,  Ryan Chia-Jen Chen ,  Chi-Ming Yang ,  Chyi Shyuan Chern ,  Chin-Hsiang Lin

发明人： Kuo Bin Huang ,  Ssu-Yi Li ,  Ryan Chia-Jen Chen ,  Chi-Ming Yang ,  Chyi Shyuan Chern ,  Chin-Hsiang Lin

IPC分类号： H01L27/088

CPC分类号： H01L21/823842 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28247 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconductor structure with a metal gate structure includes a first type field-effect transistor having a first gate including: a high k dielectric material on a substrate, a first metal layer on the high k dielectric material layer and having a first work function, and a first aluminum layer on the first metal layer. The first aluminum layer includes an interfacial layer including aluminum, nitrogen and oxygen. The device also includes a second type field-effect transistor having a second gate including: the high k dielectric material on the substrate, a second metal layer on the high k dielectric material layer and having a second work function different from the first work function, and a second aluminum layer on the second metal layer.

摘要翻译： 具有金属栅极结构的半导体结构包括具有第一栅极的第一型场效应晶体管，包括：基板上的高k电介质材料，高k电介质材料层上的第一金属层，具有第一功函数，以及 在第一金属层上的第一铝层。 第一铝层包括包含铝，氮和氧的界面层。 该器件还包括具有第二栅极的第二类场效应晶体管，其包括：衬底上的高k电介质材料，高k电介质材料层上的第二金属层，具有不同于第一功函数的第二功函数， 和在第二金属层上的第二铝层。

公开(公告)号：US08119473B2

公开(公告)日：2012-02-21

申请号：US12651017

申请日：2009-12-31

申请人： Kuo Bin Huang ,  Ssu-Yi Li ,  Ryan Chia-Jen Chen ,  Chi-Ming Yang ,  Chyi Shyuan Chern ,  Chin-Hsiang Lin

发明人： Kuo Bin Huang ,  Ssu-Yi Li ,  Ryan Chia-Jen Chen ,  Chi-Ming Yang ,  Chyi Shyuan Chern ,  Chin-Hsiang Lin

IPC分类号： H01L21/8232

CPC分类号： H01L21/823842 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28247 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833

摘要： The present disclosure also provides another embodiment of a method for making metal gate stacks. The method includes forming a first dummy gate and a second dummy gate on a substrate; removing a polysilicon layer from the first dummy gate, resulting in a first gate trench; forming a first metal layer and a first aluminum layer in the first gate trench; applying a chemical mechanical polishing (CMP) process to the substrate; performing an annealing process to the first aluminum layer using a nitrogen and oxygen containing gas, forming an interfacial layer of aluminum, nitrogen and oxygen on the first aluminum layer; thereafter removing the polysilicon layer from the second dummy gate, resulting in a second gate trench; and forming a second metal layer and a second aluminum layer on the second metal layer in the second gate trench.

摘要翻译： 本公开还提供了制造金属栅极叠层的方法的另一个实施例。 该方法包括在衬底上形成第一虚拟栅极和第二虚拟栅极; 从第一伪栅极去除多晶硅层，产生第一栅极沟槽; 在所述第一栅极沟槽中形成第一金属层和第一铝层; 对基材进行化学机械抛光（CMP）工艺; 使用含氮和氧的气体对所述第一铝层进行退火处理，在所述第一铝层上形成铝，氮和氧的界面层; 然后从第二伪栅极去除多晶硅层，产生第二栅极沟槽; 以及在所述第二栅极沟槽中的所述第二金属层上形成第二金属层和第二铝层。