公开(公告)号：US20110034014A1

公开(公告)日：2011-02-10

申请号：US12850271

申请日：2010-08-04

申请人： Christopher R. Hatem ,  Benjamin Colombeau ,  Thirumal Thanigaivelan ,  Kyu-Ha Shim ,  Jay T. Scheuer

发明人： Christopher R. Hatem ,  Benjamin Colombeau ,  Thirumal Thanigaivelan ,  Kyu-Ha Shim ,  Jay T. Scheuer

IPC分类号： H01L21/265 ,  H01L21/425 ,  H01L21/38

CPC分类号： H01J37/20 ,  H01J37/3171 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26593 ,  H01L21/28518 ,  H01L21/823814

摘要： A method of applying a silicide to a substrate while minimizing adverse effects, such as lateral diffusion of metal or “piping” is disclosed. The implantation of the source and drain regions of a semiconductor device are performed at cold temperatures, such as below 0° C. This cold implant reduces the structural damage caused by the impacting ions. Subsequently, a silicide layer is applied, and due to the reduced structural damage, metal diffusion and piping into the substrate is lessened. In some embodiments, an amorphization implant is performed after the implantation of dopants, but prior to the application of the silicide. By performing this pre-silicide implant at cold temperatures, similar results can be obtained.

摘要翻译： 公开了将金属或“管道”的横向扩散最小化等不利影响最小化的硅化物施加于基板的方法。 半导体器件的源极和漏极区域的注入在低于0℃的低温下进行。该冷植入物减少了由冲击离子引起的结构损伤。 随后，施加硅化物层，并且由于结构损伤减小，金属扩散和管道进入衬底被减少。 在一些实施方案中，在植入掺杂剂之后但在施加硅化物之前进行非晶化注入。 通过在寒冷的温度下进行这种预硅化物种植体，可获得类似的结果。

公开(公告)号：US20090242793A1

公开(公告)日：2009-10-01

申请号：US12080028

申请日：2008-03-31

申请人： Russell J. Low ,  Jay T. Scheuer ,  Alexander S. Perel ,  Craig R. Chaney ,  Neil J. Bassom

发明人： Russell J. Low ,  Jay T. Scheuer ,  Alexander S. Perel ,  Craig R. Chaney ,  Neil J. Bassom

IPC分类号： H01J27/02

CPC分类号： H01J27/022 ,  H01J37/04 ,  H01J37/08 ,  H01J37/16 ,  H01J2237/082

摘要： Liner elements to protect the ion source housing and also increase the power efficiency of the ion source are disclosed. Two liner elements, preferably constructed from tungsten, are inserted into the ion source chamber, one placed against each of the two sidewalls. These inserts are electrically biased so as to induce an electrical field that is perpendicular to the applied magnetic field. Such an arrangement has been unexpectedly found to increase the life of not only the ion chamber housing, but also the indirectly heated cathode (IHC) and the repeller. In addition, the use of these biased liner elements also improved the power efficiency of the ion source; allowing more ions to be generated at a given power level, or an equal number of ions to be generated at a lower power level.

摘要翻译： 公开了用于保护离子源壳体的衬垫元件并且还提高了离子源的功率效率。 将优选由钨构成的两个衬垫元件插入到离子源室中，一个放置在两个侧壁中的每一个上。 这些插入物被电偏置以便引起垂直于所施加的磁场的电场。 已经意外地发现这种布置不仅增加了离子室壳体的寿命，而且延长了间接加热的阴极（IHC）和排斥器的使用寿命。 此外，使用这些偏置的衬垫元件也提高了离子源的功率效率; 允许在给定功率水平下产生更多的离子，或者在较低功率水平下产生相等数量的离子。

公开(公告)号：US08330127B2

公开(公告)日：2012-12-11

申请号：US12080028

申请日：2008-03-31

申请人： Russell J. Low ,  Jay T. Scheuer ,  Alexander S. Perel ,  Craig R. Chaney ,  Neil J. Bassom

发明人： Russell J. Low ,  Jay T. Scheuer ,  Alexander S. Perel ,  Craig R. Chaney ,  Neil J. Bassom

IPC分类号： G21K5/00

CPC分类号： H01J27/022 ,  H01J37/04 ,  H01J37/08 ,  H01J37/16 ,  H01J2237/082

摘要： Liner elements to protect the ion source housing and also increase the power efficiency of the ion source are disclosed. Two liner elements, preferably constructed from tungsten, are inserted into the ion source chamber, one placed against each of the two sidewalls. These inserts are electrically biased so as to induce an electrical field that is perpendicular to the applied magnetic field. Such an arrangement has been unexpectedly found to increase the life of not only the ion chamber housing, but also the indirectly heated cathode (IHC) and the repeller. In addition, the use of these biased liner elements also improved the power efficiency of the ion source; allowing more ions to be generated at a given power level, or an equal number of ions to be generated at a lower power level.

摘要翻译： 公开了用于保护离子源壳体的衬垫元件并且还提高了离子源的功率效率。 将优选由钨构成的两个衬垫元件插入到离子源室中，一个放置在两个侧壁中的每一个上。 这些插入物被电偏置以便引起垂直于所施加的磁场的电场。 已经意外地发现这种布置不仅增加了离子室壳体的寿命，而且延长了间接加热的阴极（IHC）和排斥器的使用寿命。 此外，使用这些偏置的衬垫元件也提高了离子源的功率效率; 允许在给定功率水平下产生更多的离子，或者在较低功率水平下产生相等数量的离子。

公开(公告)号：US20100155600A1

公开(公告)日：2010-06-24

申请号：US12342262

申请日：2008-12-23

申请人： Joseph P Dzengeleski ,  Timothy J. Miler ,  Jay T. Scheuer ,  Christopher J. Leavitt

发明人： Joseph P Dzengeleski ,  Timothy J. Miler ,  Jay T. Scheuer ,  Christopher J. Leavitt

IPC分类号： G01T1/00 ,  A61N5/00

CPC分类号： G01T1/00

摘要： An non-Faraday ion dose measurement device is positioned within a plasma process chamber and includes a sensor located above a workpiece within the chamber. The sensor is configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma implantation process. The sensor outputs a current signal proportional to the detected secondary electrons. A current circuit subtracts the detected secondary current generated from the sensor and subtracts it from a bias current supplied to the workpiece within the chamber. The difference between the currents provides a measurement of the ion dose current calculated in situ and during the implantation process.

摘要翻译： 非法拉第离子剂量测量装置位于等离子体处理室内，并且包括位于室内的工件上方的传感器。 传感器被配置为检测从暴露于等离子体注入工艺的工件的表面发射的二次电子的数量。 传感器输出与检测到的二次电子成比例的电流信号。 当前电路减去从传感器产生的检测到的次级电流，并从提供给腔室内的工件的偏置电流中减去它。 电流之间的差异提供了在原位和植入过程中计算的离子剂量电流的测量。

公开(公告)号：US20080026133A1

公开(公告)日：2008-01-31

申请号：US10858582

申请日：2004-06-02

申请人： Ziwei Fang ,  Sung-Cheon Ko ,  Edmund J. Winder ,  Daniel Distaso ,  Ludovic Godet ,  Bon Woong Koo ,  Jay T. Scheuer

发明人： Ziwei Fang ,  Sung-Cheon Ko ,  Edmund J. Winder ,  Daniel Distaso ,  Ludovic Godet ,  Bon Woong Koo ,  Jay T. Scheuer

IPC分类号： C23C16/52 ,  B05C11/00

CPC分类号： H01J37/32412

摘要： A plasma ion implantation system includes a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, the system includes a plasma monitor configured to measure ion mass and energy in the process chamber and an analyzer configured to determine an operating condition of the system in response to the measured mass and energy. In another aspect, the system includes a data acquisition unit configured to acquire samples of the implant pulses and analyzer configured to determine an operating condition of the system based on the acquired samples.

摘要翻译： 等离子体离子注入系统包括处理室，用于在处理室中产生等离子体的源，用于在处理室中保持衬底的压板和用于产生用于将等离子体离子加速到衬底中的用于产生注入脉冲的脉冲源。 在一个方面，该系统包括配置成测量处理室中的离子质量和能量的等离子体监测器，以及配置成响应于测量的质量和能量来确定系统的操作状态的分析器。 在另一方面，该系统包括：数据获取单元，被配置为获取植入脉冲的样本和被配置为基于获取的样本来确定系统的操作条件的分析器。

公开(公告)号：US07126808B2

公开(公告)日：2006-10-24

申请号：US10816289

申请日：2004-04-01

申请人： Bon-Woong Koo ,  Bjorn O. Pedersen ,  Jay T. Scheuer ,  Erik A. Mitchell

发明人： Bon-Woong Koo ,  Bjorn O. Pedersen ,  Jay T. Scheuer ,  Erik A. Mitchell

IPC分类号： H02H1/00

CPC分类号： H01L21/67109 ,  H01L21/67069 ,  H01L21/6831 ,  Y10T279/23

摘要： An apparatus is provided for handling workpieces, such as semiconductor wafers, during semiconductor processing. The apparatus includes a wafer platen having a plurality of channels each extending from a top surface to a bottom surface of the wafer platen, a plurality of lift pins in alignment with the channels, and a mechanism for engaging the lift pins in a loading position of the workpiece, a clamping position of the workpiece so that desired semiconductor processes may be performed to the workpiece, and a lift off position for removing the workpiece from the wafer platen after the semiconductor processes are completed. The mechanism places the lift pins below the surface of the wafer platen in the load position and then raises the lift pins to a first predetermined distance above the surface of the wafer platen in the clamp position such that the first predetermined distance allows the workpiece to be clamped to the wafer platen. Then, the mechanism places the lift pins at a second predetermined distance above the surface of the wafer platen in the lift off position such that a workpiece removing device, such as a robotic arm, may be positioned between the workpiece and the wafer platen without contacting either surface.

摘要翻译： 在半导体处理期间提供一种用于处理诸如半导体晶片的工件的装置。 该装置包括具有多个通道的晶片压板，每个通道从晶片压板的顶表面延伸到底表面，多个提升销与通道对准，以及用于将升降销接合在装载位置 工件，工件的夹紧位置，从而可以对工件执行所需的半导体工艺，以及用于在半导体工艺完成之后从晶片压板移除工件的剥离位置。 该机构将升降销放置在晶片压板的表面下方处于装载位置，然后将提升销提升到夹具位置上的晶片压板表面之上的第一预定距离，使得第一预定距离允许工件为 夹在晶圆台板上。 然后，该机构将提升销放置在提升离开位置上方的晶片台板表面上方第二预定距离处，使得诸如机器臂的工件移除装置可以位于工件和晶片压板之间而不接触 任一表面。

公开(公告)号：US06791097B2

公开(公告)日：2004-09-14

申请号：US10050743

申请日：2002-01-16

申请人： Jay T. Scheuer ,  Anthony Renau ,  Eric D. Hermanson

发明人： Jay T. Scheuer ,  Anthony Renau ,  Eric D. Hermanson

IPC分类号： H01J3708

CPC分类号： H01J37/16 ,  H01J37/3171 ,  H01J2237/045 ,  H01J2237/188

摘要： A charged particle beam apparatus includes a charged particle beam source for directing a charged particle beam along a beam path in a downstream direction to a target, and a processing station that defines a target chamber. The processing station includes a chamber divider which divides the target chamber into upstream and downstream regions during charged particle beam processing of the target, the target being located in the downstream region. The divider has an aperture therethrough sized to permit passage of the ion beam to the target without substantial blockage and to limit backflow of gas into the upstream region of the chamber. The divider minimizes the beam volume which is exposed to extraneous species generated at the target and thereby reduces the probability of beam-altering collisions.

摘要翻译： 带电粒子束装置包括用于将带电粒子束沿着沿着下游方向的光束路径引导到目标的带电粒子束源，以及限定目标腔室的处理站。 处理站包括一个室分隔器，其在靶的带电粒子束处理期间将目标室分成上游和下游区域，目标位于下游区域。 分隔器具有穿过其中的孔，其尺寸允许离子束通过靶，而不会实质阻塞，并限制气体回流到腔室的上游区域。 分隔器最小化暴露于在目标处产生的外来物种的光束体积，从而降低光束变化碰撞的可能性。

公开(公告)号：US07878145B2

公开(公告)日：2011-02-01

申请号：US10858582

申请日：2004-06-02

申请人： Ziwei Fang ,  Sung-Cheon Ko ,  Edmund J. Winder ,  Daniel Distaso ,  Ludovic Godet ,  Bon Woong Koo ,  Jay T. Scheuer

发明人： Ziwei Fang ,  Sung-Cheon Ko ,  Edmund J. Winder ,  Daniel Distaso ,  Ludovic Godet ,  Bon Woong Koo ,  Jay T. Scheuer

IPC分类号： C23C16/00

CPC分类号： H01J37/32412

摘要： A plasma ion implantation system includes a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, the system includes a plasma monitor configured to measure ion mass and energy in the process chamber and an analyzer configured to determine an operating condition of the system in response to the measured mass and energy. In another aspect, the system includes a data acquisition unit configured to acquire samples of the implant pulses and analyzer configured to determine an operating condition of the system based on the acquired samples.

摘要翻译： 等离子体离子注入系统包括处理室，用于在处理室中产生等离子体的源，用于在处理室中保持衬底的压板和用于产生用于将等离子体离子加速到衬底中的用于产生注入脉冲的脉冲源。 在一个方面，该系统包括配置成测量处理室中的离子质量和能量的等离子体监测器，以及配置成响应于测量的质量和能量来确定系统的操作状态的分析器。 在另一方面，该系统包括：数据获取单元，被配置为获取植入脉冲的样本和被配置为基于获取的样本来确定系统的操作条件的分析器。

公开(公告)号：US20090166555A1

公开(公告)日：2009-07-02

申请号：US12005757

申请日：2007-12-28

申请人： Joseph C. Olson ,  Jay T. Scheuer

发明人： Joseph C. Olson ,  Jay T. Scheuer

IPC分类号： H01J27/00

CPC分类号： H01J27/18 ,  H01J27/026 ,  H01J37/08 ,  H01J37/30 ,  H01J37/31 ,  H01J2237/061 ,  H01J2237/06366 ,  H01J2237/0812 ,  H01J2237/31701

摘要： The present invention discloses a system and method for generating gas cluster ion beams (GCIB) having very low metallic contaminants. Gas cluster ion beam systems are plagued by high metallic contamination, thereby affecting their utility in many applications. This contamination is caused by the use of thermionic sources, which impart contaminants and are also susceptible to short lifecycles due to their elevated operating temperatures. While earlier modifications have focused on isolating the filament from the source gas cluster as much as possible, the present invention represents a significant advancement by eliminating the thermionic source completely. In the preferred embodiment, an inductively coupled plasma and ionization region replaces the thermionic source and ionizer of the prior art. Through the use of RF or microwave frequency electromagnetic waves, plasma can be created in the absence of a filament, thereby eliminating a major contributor of metallic contaminants.

摘要翻译： 本发明公开了一种具有非常低金属污染物的气体簇离子束（GCIB）的系统和方法。 气体簇离子束系统受到高金属污染的困扰，从而影响其在许多应用中的应用。 这种污染是由使用热离子源引起的，因为它们赋予污染物，并且由于它们升高的工作温度也容易产生短暂的生命周期。 虽然较早的修改集中在尽可能多地将源极气体簇隔离，但本发明通过完全消除热离子源代表了显着的进步。 在优选实施例中，电感耦合等离子体和电离区取代现有技术的热离子源和离子发生器。 通过使用RF或微波频率电磁波，可以在没有灯丝的情况下产生等离子体，从而消除金属污染物的主要贡献者。

公开(公告)号：US20080160212A1

公开(公告)日：2008-07-03

申请号：US11616314

申请日：2006-12-27

申请人： Bon-Woong Koo ,  Steven R. Walther ,  Christopher J. Leavitt ,  Justin Tocco ,  Sung-Hwan Hyun ,  Timothy J. Miller ,  Jay T. Scheuer ,  Atul Gupta ,  Vikram Singh ,  Deven Raj

发明人： Bon-Woong Koo ,  Steven R. Walther ,  Christopher J. Leavitt ,  Justin Tocco ,  Sung-Hwan Hyun ,  Timothy J. Miller ,  Jay T. Scheuer ,  Atul Gupta ,  Vikram Singh ,  Deven Raj

IPC分类号： B28B7/38 ,  C23C16/00

CPC分类号： H01J37/32706 ,  H01J37/32623 ,  H01L21/67011 ,  H01L21/67069 ,  H01L21/68714 ,  H01L21/68735

摘要： A method and apparatuses for providing improved electrical contact to a semiconductor wafer during plasma processing applications are disclosed. In one embodiment, an apparatus includes a wafer platen for supporting the wafer; and a plurality of electrical contact elements, each of the plurality of electrical contact elements are configured to provide a path for supplying a bias voltage from a bias power supply to the wafer on the wafer platen. The plurality of electrical contact elements are also geometrically arranged such that at least one electrical contact element contacts an inner surface region (e.g., region between a center of wafer and a distance approximately half of the radius of the wafer) and at least one electrical contact element contacts an outer annular surface region (e.g., region between an outer edge of wafer and a distance approximately half of the radius of the wafer).

摘要翻译： 公开了一种用于在等离子体处理应用期间提供与半导体晶片的改进的电接触的方法和装置。 在一个实施例中，一种装置包括用于支撑晶片的晶片台板; 以及多个电接触元件，所述多个电接触元件中的每一个被配置为提供用于将来自偏置电源的偏置电压提供给晶片台板上的晶片的路径。 多个电接触元件也被几何地布置成使得至少一个电接触元件接触内表面区域（例如，晶片的中心与晶片的半径的一半的距离）和至少一个电接触 元件接触外部环形表面区域（例如，晶片的外边缘之间的区域和晶片的半径的一半的距离）。