摘要:
This invention provides a semiconductor package and a method for fabricating the same. The method includes: forming a first resist layer on a metal carrier; forming a plurality of openings penetrating the first resist layer; forming a conductive metal layer in the openings; removing the first resist layer; covering the metal carrier having the conductive metal layer with a dielectric layer; forming blind vias in the dielectric layer to expose a portion of the conductive metal layer; forming conductive circuit on the dielectric layer and conductive posts in the blind vias, such that the conductive circuit is electrically connected to the conductive metal layer via the conductive posts; electrically connecting at least one chip to the conductive circuit; forming an encapsulant for encapsulating the chip and the conductive circuit; and removing the metal carrier, thereby allowing a semiconductor package to be formed without a chip carrier. Given the conductive posts, both the conductive circuit and conductive metal layer are efficiently coupled to the dielectric layer to prevent delamination. Further, downsizing the blind vias facilitates the fabrication process and cuts the fabrication cost.
摘要:
A chip carrier for accommodating a passive component is proposed, allowing at least a chip to be electrically connected to the chip carrier. At least a pair of spaced-apart solder pads are formed on the chip carrier in no interference with the electrical connection between the chip and the chip carrier. A passive component is bonded at its two ends onto the solder pads by solder paste that electrically connects the passive component to the chip carrier. A recessed portion formed between the pair of the solder pads, is associated with a bottom surface of the passive component to form a passage, allowing a resin material for encapsulating the passive component or the chip to pass through and fill the passage, whereby the filled passage can prevent bridging of the solder paste and short circuit of the passive component from occurrence, thereby making yield of fabricated products desirably improved.
摘要:
A method for manufacturing gold bumps includes providing a substrate including a patterned protective layer, which exposes at least a bonding pad, on a surface, covering a photo resist on the surface of the substrate, performing a photolithography process to pattern the photo resist for exposing a portion of the protective layer and the bonding pad, removing a portion of the protective layer, removing the photo resist, and performing a gold bumping process. The resulting thickness of the protective layer covering the bonding pad is smaller than the resulting thickness of the protective layer covering the substrate.
摘要:
A method and a system for managing cache files, adapted for a local end apparatus to manage files cached from a service end apparatus, are provided. In the method, a file is divided into a plurality of segments, and a part of the segments are downloaded from the service end apparatus and stored in the local end apparatus. Then, the segments of the file to be downloaded are increased or decreased according to a utility rate of the file.
摘要:
A wire-bonded semiconductor device with an improved wire-arrangement scheme is proposed, which can help minimize abnormal wire sweep during encapsulation process. Among the bonding wires on the semiconductor device, those located in corners would be mostly susceptible to abnormal wire sweep, particularly a high-loop bonding wire that is located in immediate adjacency to a low-loop bonding wire located in one corner of the wire-bonded semiconductor device. To solve this problem, the low-loop bonding wire that is located in immediate adjacency to the sweep-susceptible high-loop bonding wire is erected substantially to the same loop height as the high-loop bonding wire, so that it can serve as a shield to the sweep-susceptible high-loop bonding wire against the flow of injected resin during encapsulation process, thus preventing abnormal wire sweep. Alternatively, if a pair of low-loop bonding wires are located in immediate adjacency to the sweep-susceptible high-loop bonding wire and are bonded to a common double-wire bond pad, these two low-loop bonding wires are arranged in an intercrossed manner, which can also help reduce the impact of the injected resin on the sweep-susceptible high-loop bonding wire, thus preventing abnormal wire sweep. The prevention of abnormal wire sweep allows the finished semiconductor device to be more assured in quality and reliability.
摘要:
A chip carrier, a semiconductor package and a fabricating method thereof are proposed, in which on one side of the chip carrier finally removed from an engaged surface of a mold in a de-molding process there is formed at least one grounding means corresponding in position to an eject pin of the mold, so as to allow a gear amount of electrical static generated on a surface of the semiconductor package during molding and de-molding to be discharged to the outside, instead of being retained on a semiconductor chip, conductive elements and conductive traces of the semiconductor package. This therefore can prevent electrical leakage and damage to the semiconductor chip from occurrence, and improve the quality and production efficiency for the semiconductor package.
摘要:
A computer system and a computer information display method thereof are provided. In the method, a computer information management unit stores computer information of an application program in a storage unit. During a system login process of the computer system, a processing unit reads the computer information form the storage unit, and displays the computer information and a login dialog on a screen unit.
摘要:
A conductive trace structure and a semiconductor package having the conductive trace structure are provided. A plurality of conductive traces are formed in and surrounding a chip mounting area on a substrate, for mounting a chip on the chip mounting area. Widened portions are formed on the conductive traces in the chip mounting area and at positions across a periphery of the chip mounting area, the widened portions having a line width larger than that of the rest part of the conductive traces. The widened portions of the conductive traces can sustain concentrated thermal stress from the peripheral area of the chip caused by mismatch in coefficient of thermal expansion between the chip and the substrate. This prevents the conductive traces that pass through the periphery of the chip mounting area from cracks or breaks due to the thermal stress, thereby improving the reliability and yield of the semiconductor package.
摘要:
A substrate for a semiconductor package is provided, which includes: a core layer; at least a metal layer applied over each of upper and lower surfaces of the core layer, wherein the metal layer on the upper surface forms a plurality of conductive traces each having a terminal, and the metal layer on the lower surface is defined with a conductive region and a surrounding peripheral region, allowing the conductive region to form a plurality of conductive traces each having a terminal; and an insulating layer applied over each of the metal layers, wherein terminals of the conductive traces and at least a corner portion of the peripheral region are exposed to outside of the insulating layers. During fabrication of semiconductor packages, after a post molding curing process, the vertically-stacked substrates can be easily separated by virtue of a gap being formed between exposed corner portions of the stacked substrates.
摘要:
A conductive trace structure and a semiconductor package having the conductive trace structure are provided. A plurality of conductive traces are formed in and surrounding a chip mounting area on a substrate, for mounting a chip on the chip mounting area. Widened portions are formed on the conductive traces in the chip mounting area and at positions across a periphery of the chip mounting area, the widened portions having a line width larger than that of the rest part of the conductive traces. The widened portions of the conductive traces can sustain concentrated thermal stress from the peripheral area of the chip caused by mismatch in coefficient of thermal expansion between the chip and the substrate. This prevents the conductive traces that pass through the periphery of the chip mounting area from cracks or breaks due to the thermal stress, thereby improving the reliability and yield of the semiconductor package.