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    METHOD TO ENHANCE PERFORMANCE OF COMPLEX METAL OXIDE PROGRAMMABLE MEMORY
    3.
    发明申请
    METHOD TO ENHANCE PERFORMANCE OF COMPLEX METAL OXIDE PROGRAMMABLE MEMORY 审中-公开
    提高复合金属氧化物可编程存储器性能的方法

    公开(公告)号：US20090186443A1

    公开(公告)日：2009-07-23

    申请号：US12017848

    申请日：2008-01-22

    申请人： Eric A. Joseph ,  Chung Hon Lam ,  Gerhard I. Meijer ,  Stephen M. Rossnagel ,  Alejandro Gabriel Schrott

    发明人： Eric A. Joseph ,  Chung Hon Lam ,  Gerhard I. Meijer ,  Stephen M. Rossnagel ,  Alejandro Gabriel Schrott

    IPC分类号： H01L21/34

    CPC分类号： H01L45/08 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/1273 ,  H01L45/147 ,  H01L45/16

    摘要： A method of incorporating oxygen vacancies near an electrode/oxide interface region of a complex metal oxide programmable memory cell which includes forming a first electrode of a metallic material which remains metallic upon oxidation, forming a second electrode facing the first electrode, forming an oxide layer in between the first and second electrodes, applying an electrical signal to the first electrode such that oxygen ions from the oxide layer are embedded in and oxidize the first electrode, and forming oxygen vacancies near the electrode/oxide interface region of the complex metal oxide programmable memory cell.

    摘要翻译： 一种在复合金属氧化物可编程存储单元的电极/氧化物界面区域附近引入氧空位的方法，其包括在氧化时形成保持金属的金属材料的第一电极，形成面向第一电极的第二电极，形成氧化物层 在第一和第二电极之间，向第一电极施加电信号，使得来自氧化物层的氧离子嵌入并氧化第一电极，并在复合金属氧化物可编程的电极/氧化物界面区域附近形成氧空位 记忆单元

    Scaled-down phase change memory cell in recessed heater
    4.
    发明授权
    Scaled-down phase change memory cell in recessed heater 有权
    嵌入式加热器中的缩小相变存储单元

    公开(公告)号：US08426967B2

    公开(公告)日：2013-04-23

    申请号：US11620138

    申请日：2007-01-05

    申请人： Eric Andrew Joseph ,  Chung Hon Lam ,  Alejandro Gabriel Schrott

    发明人： Eric Andrew Joseph ,  Chung Hon Lam ,  Alejandro Gabriel Schrott

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/06

    CPC分类号： H01L45/1233 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1246 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1691

    摘要： A semiconductor structure configurable for use as a nonvolatile storage element includes a first electrode, an insulating layer formed on at least a portion of an upper surface of the first electrode, and a pillar traversing the insulating layer and being recessed relative to an upper surface of the insulating layer. The pillar includes a heater formed on at least a portion of the upper surface of the first electrode and a collar formed on sidewalls of the insulating layer proximate the heater and on at least a portion of an upper surface of the heater. The structure further includes a PCM layer formed on at least a portion of the upper surface of the insulating layer and substantially filling a volume defined by the upper surface of the heater and at least a portion of an upper surface of the collar. A second electrode is formed on at least a portion of an upper surface of the phase change material layer.

    摘要翻译： 可配置为用作非易失性存储元件的半导体结构包括第一电极，形成在第一电极的上表面的至少一部分上的绝缘层和穿过绝缘层并且相对于第一电极的上表面凹陷的柱 绝缘层。 支柱包括形成在第一电极的上表面的至少一部分上的加热器和形成在靠近加热器的绝缘层的侧壁上和在加热器的上表面的至少一部分上的套环。 该结构还包括形成在绝缘层的上表面的至少一部分上并基本上填充由加热器的上表面限定的体积和套环的上表面的至少一部分的PCM层。 第二电极形成在相变材料层的上表面的至少一部分上。

    Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement
    6.
    发明授权
    Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement 有权
    具有同心相变材料的非易失性存储单元围绕柱布置形成

    公开(公告)号：US07989796B2

    公开(公告)日：2011-08-02

    申请号：US12051389

    申请日：2008-03-19

    申请人： Chung Hon Lam ,  Alejandro Gabriel Schrott

    发明人： Chung Hon Lam ,  Alejandro Gabriel Schrott

    IPC分类号： H01L47/00

    CPC分类号： H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/126 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/1625 ,  H01L45/1691

    摘要： A memory cell comprises a first feature and a second feature. The second feature comprises a dielectric material and defines an opening at least partially overlying the first feature. A third feature is formed on the first feature and partially fills the opening in the second feature. What is more, a phase change material at least fills a volume between the second feature and the third feature. At least a portion of the phase change material is operative to switch between lower and higher electrical resistance states in response to an application of a switching signal to the memory cell.

    摘要翻译： 存储单元包括第一特征和第二特征。 第二特征包括介电材料并限定至少部分地覆盖第一特征的开口。 在第一特征上形成第三特征并且部分地填充第二特征中的开口。 此外，相变材料至少填充第二特征和第三特征之间的体积。 响应于将切换信号施加到存储器单元，相变材料的至少一部分可操作以在较低和较高的电阻状态之间切换。

    MUSHROOM TYPE MEMORY CELL HAVING SELF-ALIGNED BOTTOM ELECTRODE AND DIODE ACCESS DEVICE
    7.
    发明申请
    MUSHROOM TYPE MEMORY CELL HAVING SELF-ALIGNED BOTTOM ELECTRODE AND DIODE ACCESS DEVICE 审中-公开
    具有自对准底部电极和二极管访问装置的MUSHROOM型存储单元

    公开(公告)号：US20100019215A1

    公开(公告)日：2010-01-28

    申请号：US12177435

    申请日：2008-07-22

    申请人： Hsiang-Lan Lung ,  Chung Hon Lam ,  Thomas D. Happ ,  Matthew J. Breitwisch ,  Alejandro Gabriel Schrott ,  Min Yang

    发明人： Hsiang-Lan Lung ,  Chung Hon Lam ,  Thomas D. Happ ,  Matthew J. Breitwisch ,  Alejandro Gabriel Schrott ,  Min Yang

    IPC分类号： H01L47/00 ,  H01L21/00

    CPC分类号： G11C13/0004 ,  G11C11/5678 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

    摘要： Memory devices are described along with methods for manufacturing. A memory device as described herein includes a plurality of word lines extending in a first direction, and a plurality of bit lines overlying the plurality of word lines and extending in a second direction. A plurality of memory cells are at cross-point locations. Each memory cell comprises a diode having first and second sides aligned with sides of a corresponding word line. Each memory cell also includes a bottom electrode self-centered on the diode, the bottom electrode having a top surface with a surface area less than that of the top surface of the diode. Each of the memory cells includes a strip of memory material on the top surface of the bottom electrode, the strip of memory material underlying and in electrical communication with a corresponding bit line.

    摘要翻译： 描述存储器件以及制造方法。 如本文所述的存储器件包括沿第一方向延伸的多个字线和覆盖多个字线并沿第二方向延伸的多个位线。 多个存储单元处于交叉点位置。 每个存储单元包括具有与相应字线的侧面对准的第一和第二侧的二极管。 每个存储单元还包括以二极管为中心的底部电极，底部电极具有表面积小于二极管顶表面的顶表面。 每个存储器单元包括在底部电极的顶表面上的存储器材料条，存储器材料条下面并与相应位线电连通。

    Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement
    10.
    发明申请
    Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement 失效
    具有同心相变材料的非易失性存储单元围绕柱布置形成

    公开(公告)号：US20070295948A1

    公开(公告)日：2007-12-27

    申请号：US11448549

    申请日：2006-06-07

    申请人： Chung Hon Lam ,  Alejandro Gabriel Schrott

    发明人： Chung Hon Lam ,  Alejandro Gabriel Schrott

    IPC分类号： H01L47/00

    CPC分类号： H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/126 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/1625 ,  H01L45/1691

    摘要： A memory cell comprises a first feature and a second feature. The second feature comprises a dielectric material and defines an opening at least partially overlying the first feature. A third feature is formed on the first feature and partially fills the opening in the second feature. What is more, a phase change material at least fills a volume between the second feature and the third feature. At least a portion of the phase change material is operative to switch between lower and higher electrical resistance states in response to an application of a switching signal to the memory cell.

    摘要翻译： 存储单元包括第一特征和第二特征。 第二特征包括介电材料并限定至少部分地覆盖第一特征的开口。 在第一特征上形成第三特征并且部分地填充第二特征中的开口。 此外，相变材料至少填充第二特征和第三特征之间的体积。 响应于将切换信号施加到存储器单元，相变材料的至少一部分可操作以在较低和较高的电阻状态之间切换。