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公开(公告)号:US20120074590A1
公开(公告)日:2012-03-29
申请号:US12892003
申请日:2010-09-28
申请人: Chung-Hsien Lin , Chia-Hua Chu , Li-Cheng Chu , Yuan-Chih Hsieh , Chun-Wen Cheng
发明人: Chung-Hsien Lin , Chia-Hua Chu , Li-Cheng Chu , Yuan-Chih Hsieh , Chun-Wen Cheng
IPC分类号: H01L23/488 , H01L21/768
CPC分类号: B81B7/0032 , B81B2207/092 , B81C1/00269 , B81C1/00357 , B81C2203/0109 , B81C2203/0792 , H01L2924/0002 , H01L2924/00
摘要: The present disclosure provides a method for fabricating a MEMS device including multiple bonding of substrates. In an embodiment, a method includes providing a micro-electro-mechanical systems (MEMS) substrate including a first bonding layer, providing a semiconductor substrate including a second bonding layer, and providing a cap including a third bonding layer. The method further includes bonding the MEMS substrate to the semiconductor substrate at the first and second bonding layers, and bonding the cap to the semiconductor substrate at the second and third bonding layers to hermetically seal the MEMS substrate between the cap and the semiconductor substrate. A MEMS device fabricated by the above method is also provided.
摘要翻译: 本公开提供了一种用于制造包括多个基板结合的MEMS装置的方法。 在一个实施例中,一种方法包括提供包括第一结合层的微电子机械系统(MEMS)衬底,提供包括第二接合层的半导体衬底,以及提供包括第三接合层的帽。 该方法还包括在第一和第二接合层处将MEMS衬底接合到半导体衬底,并且在第二和第三接合层处将盖接合到半导体衬底上,以密封MEMS衬底在盖和半导体衬底之间。 还提供了通过上述方法制造的MEMS器件。
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公开(公告)号:US08486744B2
公开(公告)日:2013-07-16
申请号:US12892003
申请日:2010-09-28
申请人: Chung-Hsien Lin , Chia-Hua Chu , Li-Cheng Chu , Yuan-Chih Hsieh , Chun-Wen Cheng
发明人: Chung-Hsien Lin , Chia-Hua Chu , Li-Cheng Chu , Yuan-Chih Hsieh , Chun-Wen Cheng
IPC分类号: H01L21/00
CPC分类号: B81B7/0032 , B81B2207/092 , B81C1/00269 , B81C1/00357 , B81C2203/0109 , B81C2203/0792 , H01L2924/0002 , H01L2924/00
摘要: The present disclosure provides a method for fabricating a MEMS device including multiple bonding of substrates. In an embodiment, a method includes providing a micro-electro-mechanical systems (MEMS) substrate including a first bonding layer, providing a semiconductor substrate including a second bonding layer, and providing a cap including a third bonding layer. The method further includes bonding the MEMS substrate to the semiconductor substrate at the first and second bonding layers, and bonding the cap to the semiconductor substrate at the second and third bonding layers to hermetically seal the MEMS substrate between the cap and the semiconductor substrate. A MEMS device fabricated by the above method is also provided.
摘要翻译: 本公开提供了一种用于制造包括多个基板结合的MEMS装置的方法。 在一个实施例中,一种方法包括提供包括第一结合层的微电子机械系统(MEMS)衬底,提供包括第二接合层的半导体衬底,以及提供包括第三接合层的帽。 该方法还包括在第一和第二接合层处将MEMS衬底接合到半导体衬底,并且在第二和第三接合层处将盖接合到半导体衬底上,以密封MEMS衬底在盖和半导体衬底之间。 还提供了通过上述方法制造的MEMS器件。
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公开(公告)号:US08648468B2
公开(公告)日:2014-02-11
申请号:US12846504
申请日:2010-07-29
申请人: Richard Chu , Martin Liu , Chia-Hua Chu , Yuan-Chih Hsieh , Chung-Hsien Lin , Lan-Lin Chao , Chun-Wen Cheng , Mingo Liu
发明人: Richard Chu , Martin Liu , Chia-Hua Chu , Yuan-Chih Hsieh , Chung-Hsien Lin , Lan-Lin Chao , Chun-Wen Cheng , Mingo Liu
IPC分类号: H01L23/48
CPC分类号: H01L24/94 , B81B2207/015 , B81C1/00269 , B81C2203/0109 , B81C2203/0771 , H01L23/481 , H01L25/50 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/1306 , H01L2924/14 , H01L2924/1461 , H01L2924/00
摘要: Provided is a wafer level packaging. The packaging includes a first semiconductor wafer having a transistor device and a first bonding layer that includes a first material. The packaging includes a second semiconductor wafer having a second bonding layer that includes a second material different from the first material, one of the first and second materials being aluminum -based, and the other thereof being titanium-based. Wherein a portion of the second wafer is diffusively bonded to the first wafer through the first and second bonding layers.
摘要翻译: 提供晶圆级封装。 该封装包括具有晶体管器件的第一半导体晶片和包括第一材料的第一结合层。 所述封装包括具有第二接合层的第二半导体晶片,所述第二接合层包括不同于所述第一材料的第二材料,所述第一和第二材料中的一个为铝基,另一个为钛基。 其中第二晶片的一部分通过第一和第二接合层扩散地结合到第一晶片。
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公开(公告)号:US20120025389A1
公开(公告)日:2012-02-02
申请号:US12846504
申请日:2010-07-29
申请人: Richard Chu , Martin Liu , Chia-Hua Chu , Yuan-Chih Hsieh , Chung-Hsien Lin , Lan-Lin Chao , Chun-Wen Cheng , Mingo Liu
发明人: Richard Chu , Martin Liu , Chia-Hua Chu , Yuan-Chih Hsieh , Chung-Hsien Lin , Lan-Lin Chao , Chun-Wen Cheng , Mingo Liu
CPC分类号: H01L24/94 , B81B2207/015 , B81C1/00269 , B81C2203/0109 , B81C2203/0771 , H01L23/481 , H01L25/50 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/1306 , H01L2924/14 , H01L2924/1461 , H01L2924/00
摘要: Provided is a wafer level packaging. The packaging includes a first semiconductor wafer having a transistor device and a first bonding layer that includes a first material. The packaging includes a second semiconductor wafer having a second bonding layer that includes a second material different from the first material, one of the first and second materials being aluminum-based, and the other thereof being titanium-based. Wherein a portion of the second wafer is diffusively bonded to the first wafer through the first and second bonding layers.
摘要翻译: 提供晶圆级封装。 该封装包括具有晶体管器件的第一半导体晶片和包括第一材料的第一结合层。 所述封装包括具有第二接合层的第二半导体晶片,所述第二接合层包括不同于所述第一材料的第二材料,所述第一和第二材料中的一个为铝基,另一个为钛基。 其中第二晶片的一部分通过第一和第二接合层扩散地结合到第一晶片。
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公开(公告)号:US20130203199A1
公开(公告)日:2013-08-08
申请号:US13365043
申请日:2012-02-02
申请人: Xin-Hua Huang , Ping-Yin Liu , Li-Cheng Chu , Yuan-Chih Hsieh , Lan-Lin Chao , Chun-Wen Cheng , Chia-Shiung Tsai
发明人: Xin-Hua Huang , Ping-Yin Liu , Li-Cheng Chu , Yuan-Chih Hsieh , Lan-Lin Chao , Chun-Wen Cheng , Chia-Shiung Tsai
CPC分类号: B23K20/002 , B23K20/023
摘要: A method includes bonding a first bond layer to a second bond layer through eutectic bonding. The step of bonding includes heating the first bond layer and the second bond layer to a temperature higher than a eutectic temperature of the first bond layer and the second bond layer, and performing a pumping cycle. The pumping cycle includes applying a first force to press the first bond layer and the second bond layer against each other. After the step of applying the first force, a second force lower than the first force is applied to press the first bond layer and the second bond layer against each other. After the step of applying the second force, a third force higher than the second force is applied to press the first bond layer and the second bond layer against each other.
摘要翻译: 一种方法包括通过共晶接合将第一接合层结合到第二接合层。 接合步骤包括将第一接合层和第二接合层加热至高于第一接合层和第二接合层的共晶温度的温度,并进行泵送循环。 泵送循环包括施加第一力以将第一接合层和第二接合层相互挤压。 在施加第一力的步骤之后,施加比第一力小的第二力以将第一接合层和第二接合层相互挤压。 在施加第二力的步骤之后,施加比第二力高的第三力以将第一接合层和第二接合层相互挤压。
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公开(公告)号:US08905293B2
公开(公告)日:2014-12-09
申请号:US12964347
申请日:2010-12-09
申请人: Ping-Yin Liu , Li-Cheng Chu , Hung-Hua Lin , Shang-Ying Tsai , Yuan-Chih Hsieh , Jung-Huei Peng , Lan-Lin Chao , Chia-Shiung Tsai , Chun-Wen Cheng
发明人: Ping-Yin Liu , Li-Cheng Chu , Hung-Hua Lin , Shang-Ying Tsai , Yuan-Chih Hsieh , Jung-Huei Peng , Lan-Lin Chao , Chia-Shiung Tsai , Chun-Wen Cheng
CPC分类号: B81C1/00269 , B32B7/12 , B32B15/043 , B32B15/20 , B32B2255/24 , B32B2307/746 , B32B2457/00 , B81B3/0005 , B81C2201/112 , Y10T428/12674 , Y10T428/12708 , Y10T428/12736 , Y10T428/12986
摘要: A bond free of an anti-stiction layer and bonding method is disclosed. An exemplary method includes forming a first bonding layer; forming an interlayer over the first bonding layer; forming an anti-stiction layer over the interlayer; and forming a liquid from the first bonding layer and interlayer, such that the anti-stiction layer floats over the first bonding layer. A second bonding layer can be bonded to the first bonding layer while the anti-stiction layer floats over the first bonding layer, such that a bond between the first and second bonding layers is free of the anti-stiction layer.
摘要翻译: 公开了没有抗静电层和粘合方法的键。 一种示例性方法包括形成第一粘合层; 在所述第一接合层上形成中间层; 在中间层上形成抗静电层; 以及从所述第一接合层和中间层形成液体,使得所述抗静电层浮在所述第一接合层上。 第二接合层可以结合到第一接合层,同时抗静电层漂浮在第一接合层上,使得第一和第二接合层之间的接合没有抗静电层。
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公开(公告)号:US20120148870A1
公开(公告)日:2012-06-14
申请号:US12964347
申请日:2010-12-09
申请人: Ping-Yin Liu , Li-Cheng Chu , Hung-Hua Lin , Shang-Ying Tsai , Yuan-Chih Hsieh , Jung-Huei Peng , Lan-Lin Chao , Chia-Shiung Tsai , Chun-Wen Cheng
发明人: Ping-Yin Liu , Li-Cheng Chu , Hung-Hua Lin , Shang-Ying Tsai , Yuan-Chih Hsieh , Jung-Huei Peng , Lan-Lin Chao , Chia-Shiung Tsai , Chun-Wen Cheng
CPC分类号: B81C1/00269 , B32B7/12 , B32B15/043 , B32B15/20 , B32B2255/24 , B32B2307/746 , B32B2457/00 , B81B3/0005 , B81C2201/112 , Y10T428/12674 , Y10T428/12708 , Y10T428/12736 , Y10T428/12986
摘要: A bond free of an anti-stiction layer and bonding method is disclosed. An exemplary method includes forming a first bonding layer; forming an interlayer over the first bonding layer; forming an anti-stiction layer over the interlayer; and forming a liquid from the first bonding layer and interlayer, such that the anti-stiction layer floats over the first bonding layer. A second bonding layer can be bonded to the first bonding layer while the anti-stiction layer floats over the first bonding layer, such that a bond between the first and second bonding layers is free of the anti-stiction layer.
摘要翻译: 公开了没有抗静电层和粘合方法的键。 一种示例性方法包括形成第一粘合层; 在所述第一接合层上形成中间层; 在中间层上形成抗静电层; 以及从所述第一接合层和中间层形成液体,使得所述抗静电层浮在所述第一接合层上。 第二接合层可以结合到第一接合层,同时抗静电层漂浮在第一接合层上,使得第一和第二接合层之间的接合没有抗静电层。
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公开(公告)号:US08790946B2
公开(公告)日:2014-07-29
申请号:US13365043
申请日:2012-02-02
申请人: Xin-Hua Huang , Ping-Yin Liu , Li-Cheng Chu , Yuan-Chih Hsieh , Lan-Lin Chao , Chun-Wen Cheng , Chia-Shiung Tsai
发明人: Xin-Hua Huang , Ping-Yin Liu , Li-Cheng Chu , Yuan-Chih Hsieh , Lan-Lin Chao , Chun-Wen Cheng , Chia-Shiung Tsai
IPC分类号: H01L21/52
CPC分类号: B23K20/002 , B23K20/023
摘要: A method includes bonding a first bond layer to a second bond layer through eutectic bonding. The step of bonding includes heating the first bond layer and the second bond layer to a temperature higher than a eutectic temperature of the first bond layer and the second bond layer, and performing a pumping cycle. The pumping cycle includes applying a first force to press the first bond layer and the second bond layer against each other. After the step of applying the first force, a second force lower than the first force is applied to press the first bond layer and the second bond layer against each other. After the step of applying the second force, a third force higher than the second force is applied to press the first bond layer and the second bond layer against each other.
摘要翻译: 一种方法包括通过共晶接合将第一接合层结合到第二接合层。 接合步骤包括将第一接合层和第二接合层加热至高于第一接合层和第二接合层的共晶温度的温度,并进行泵送循环。 泵送循环包括施加第一力以将第一接合层和第二接合层相互挤压。 在施加第一力的步骤之后,施加比第一力小的第二力以将第一接合层和第二接合层相互挤压。 在施加第二力的步骤之后,施加比第二力高的第三力以将第一接合层和第二接合层相互挤压。
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公开(公告)号:US08846129B2
公开(公告)日:2014-09-30
申请号:US13372141
申请日:2012-02-13
申请人: Hung-Hua Lin , Li-Cheng Chu , Ming-Tung Wu , Yuan-Chih Hsieh , Lan-Lin Chao , Chia-Shiung Tsai
发明人: Hung-Hua Lin , Li-Cheng Chu , Ming-Tung Wu , Yuan-Chih Hsieh , Lan-Lin Chao , Chia-Shiung Tsai
IPC分类号: B05D3/10 , C12Q1/68 , H01L21/311
CPC分类号: G01N21/55 , G01N21/01 , G01N21/253 , G01N27/327 , G01N33/483 , G01N2021/0106 , G01N2201/0636
摘要: A method of forming of biological sensing structures including a portion of a substrate is recessed to form a plurality of mesas in the substrate. Each of the plurality of mesas has a top surface and a sidewall surface. A first light reflecting layer is deposited over the top surface and the sidewall surface of each mesa. A filling material is formed over a first portion of the first light reflecting layer. A stop layer is deposited over the filling material and a second portion of the first light reflecting layer. A sacrificial layer is formed over the stop layer and is planarized exposing the stop layer. A first opening is formed in the stop layer and the first light reflecting layer. A second light reflecting layer is deposited over the first opening. A second opening is formed in the second light reflecting layer.
摘要翻译: 形成包括衬底的一部分的生物感测结构的方法被凹进以在衬底中形成多个台面。 多个台面中的每一个具有顶表面和侧壁表面。 第一光反射层沉积在每个台面的顶表面和侧壁表面上。 在第一光反射层的第一部分上形成填充材料。 沉积在填充材料上的停止层和第一光反射层的第二部分。 牺牲层形成在停止层上并且被平坦化地暴露停止层。 在停止层和第一光反射层中形成第一开口。 第二光反射层沉积在第一开口上。 在第二光反射层中形成第二开口。
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公开(公告)号:US08405169B2
公开(公告)日:2013-03-26
申请号:US12905358
申请日:2010-10-15
申请人: Chun-Ren Cheng , Yi-Hsien Chang , Allen Timothy Chang , Ching-Ray Chen , Li-Cheng Chu , Hung-Hua Lin , Yuan-Chih Hsieh , Lan-Lin Chao
发明人: Chun-Ren Cheng , Yi-Hsien Chang , Allen Timothy Chang , Ching-Ray Chen , Li-Cheng Chu , Hung-Hua Lin , Yuan-Chih Hsieh , Lan-Lin Chao
CPC分类号: B81C1/0038
摘要: A device is provided which includes a transparent substrate. An opaque layer is disposed on the transparent substrate. A conductive layer disposed on the opaque layer. The opaque layer and the conductive layer form a handling layer, which may be used to detect and/or align the transparent wafer during fabrication processes. In an embodiment, the conductive layer includes a highly-doped silicon layer. In an embodiment, the opaque layer includes a metal. In embodiment, the device may include a MEMs device.
摘要翻译: 提供了一种包括透明基板的装置。 在透明基板上设置不透明层。 设置在不透明层上的导电层。 不透明层和导电层形成处理层,其可用于在制造工艺期间检测和/或对准透明晶片。 在一个实施例中,导电层包括高度掺杂的硅层。 在一个实施例中,不透明层包括金属。 在实施例中,设备可以包括MEMs设备。
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