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    Wafer surface temperature control for deposition of thin films
    1.
    发明授权
    Wafer surface temperature control for deposition of thin films 失效
    用于沉积薄膜的晶片表面温度控制

    公开(公告)号：US5834068A

    公开(公告)日：1998-11-10

    申请号：US682844

    申请日：1996-07-12

    申请人： Chyi Chern ,  Wei Chen ,  Marvin Liao ,  Jennifer Meng Chu Tseng ,  Mei Chang

    发明人： Chyi Chern ,  Wei Chen ,  Marvin Liao ,  Jennifer Meng Chu Tseng ,  Mei Chang

    IPC分类号： C23C14/02 ,  C23C16/44 ,  C23C16/46 ,  C23C16/52 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285

    CPC分类号： C23C16/463 ,  C23C16/46 ,  C23C16/52

    摘要： A method for improving the characteristics of deposited thin films by improved control and stabilization of wafer surface temperatures. Further, the invention provides the ability to rapidly change the temperature of the wafer surface without the need to change the temperature of the chamber. The wafer is heated to an operating temperature by conventional means. A gas with high thermal conductivity, such as helium or hydrogen, is passed over the wafer to cool its surface to a desired temperature for the process to be performed. The flow rate is then adjusted to stabilize the temperature of the wafer and reduce surface temperature variations. Processing gases are then introduced into the chamber, and deposition onto the wafer commences. The maintenance of correct wafer surface temperature results in improved step coverage and conformality of the deposited film. Post-deposition steps such as plasma annealing may be performed using a gas compatible with the process at a flow rate which results in a temperature desirable for the post-deposition process.

    摘要翻译： 通过改善晶片表面温度的控制和稳定性来改善沉积薄膜的特性的方法。 此外，本发明提供了快速改变晶片表面的温度而不需要改变腔的温度的能力。 通过常规方法将晶片加热至工作温度。 具有高导热性的气体（例如氦气或氢气）通过晶片，将其表面冷却至期望的温度以进行该过程。 然后调节流速以稳定晶片的温度并降低表面温度变化。 然后将处理气体引入室中，并且沉积到晶片上。 保持正确的晶片表面温度导致了沉积膜的阶梯覆盖和保形性的改善。 诸如等离子体退火之类的后沉积步骤可以使用与该工艺相容的气体以可以达到沉积后期望的温度的流速进行。

    Construction of a film on a semiconductor wafer
    3.
    发明授权
    Construction of a film on a semiconductor wafer 失效
    在半导体晶片上构造膜

    公开(公告)号：US06444036B2

    公开(公告)日：2002-09-03

    申请号：US09737681

    申请日：2000-12-15

    申请人： Chyi Chern ,  Michal Danek ,  Marvin Liao ,  Roderick C. Mosely ,  Karl Littau ,  Ivo Raaijmakers ,  David C. Smith

    发明人： Chyi Chern ,  Michal Danek ,  Marvin Liao ,  Roderick C. Mosely ,  Karl Littau ,  Ivo Raaijmakers ,  David C. Smith

    IPC分类号： B05C1100

    CPC分类号： H01L21/76864 ,  C23C16/34 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/481 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32174 ,  H01J2237/2001 ,  H01J2237/336 ,  H01L21/28512 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862

    摘要： The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

    摘要翻译： 放置在处理室中的晶片上的膜的构造可以通过以下步骤进行。 在晶片上沉积一层材料。 接下来，将材料层退火。 一旦退火完成，材料可能被氧化。 或者，一旦退火完成，材料可能暴露于硅气体。 沉积，退火和氧化或硅气体暴露都可以在相同的室中进行，而不需要从腔室中移除晶片，直到完成所有三个步骤。 用于进行这种原位结构的半导体晶片处理室可以包括处理室，喷头，晶片支架和射频信号装置。 淋浴头将气体供应到处理室中，而晶片支撑件在处理室中支撑晶片。 rf信号装置耦合到喷头和晶片支架，用于向喷头提供第一rf信号，并将第二rf信号耦合到晶片支架。

    Construction of a film on a semiconductor wafer
    5.
    发明授权
    Construction of a film on a semiconductor wafer 失效
    在半导体晶片上构造膜

    公开(公告)号：US06251758B1

    公开(公告)日：2001-06-26

    申请号：US08810221

    申请日：1997-02-28

    申请人： Chyi Chern ,  Michal Danek ,  Marvin Liao ,  Roderick C. Mosely ,  Karl Littau ,  Ivo Raaijmakers ,  David C. Smith

    发明人： Chyi Chern ,  Michal Danek ,  Marvin Liao ,  Roderick C. Mosely ,  Karl Littau ,  Ivo Raaijmakers ,  David C. Smith

    IPC分类号： H01L2128

    CPC分类号： H01L21/76864 ,  C23C16/34 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/481 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32174 ,  H01J2237/2001 ,  H01J2237/336 ,  H01L21/28512 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862

    摘要： The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

    摘要翻译： 放置在处理室中的晶片上的膜的构造可以通过以下步骤进行。 在晶片上沉积一层材料。 接下来，将材料层退火。 一旦退火完成，材料可能被氧化。 或者，一旦退火完成，材料可能暴露于硅气体。 沉积，退火和氧化或硅气体暴露都可以在相同的室中进行，而不需要从腔室中移除晶片，直到完成所有三个步骤。 用于进行这种原位结构的半导体晶片处理室可以包括处理室，喷头，晶片支架和射频信号装置。 淋浴头将气体供应到处理室中，而晶片支撑件在处理室中支撑晶片。 rf信号装置耦合到喷头和晶片支架，用于向喷头提供第一rf信号，并将第二rf信号耦合到晶片支架。

    Method for constructing a film on a semiconductor wafer
    6.
    发明授权
    Method for constructing a film on a semiconductor wafer 失效
    在半导体晶片上构造膜的方法

    公开(公告)号：US06699530B2

    公开(公告)日：2004-03-02

    申请号：US08808246

    申请日：1997-02-28

    申请人： Michal Danek ,  Marvin Liao ,  Eric Englhardt ,  Mei Chang ,  Yeh-Jen Kao ,  Dale R. DuBois ,  Alan F. Morrison

    发明人： Michal Danek ,  Marvin Liao ,  Eric Englhardt ,  Mei Chang ,  Yeh-Jen Kao ,  Dale R. DuBois ,  Alan F. Morrison

    IPC分类号： B05D306

    CPC分类号： C23C16/45565 ,  C23C16/34 ,  C23C16/4408 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/481 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32174 ,  H01J2237/2001 ,  H01J2237/336 ,  H01L21/28512 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864

    摘要： The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

    摘要翻译： 放置在处理室中的晶片上的膜的构造可以通过以下步骤进行。 在晶片上沉积一层材料。 接下来，将材料层退火。 一旦退火完成，材料可能被氧化。 或者，一旦退火完成，材料可能暴露于硅气体。 沉积，退火和氧化或硅气体暴露都可以在相同的室中进行，而不需要从腔室中移除晶片，直到完成所有三个步骤。 用于进行这种原位结构的半导体晶片处理室可以包括处理室，喷头，晶片支架和射频信号装置。 淋浴头将气体供应到处理室中，而晶片支撑件在处理室中支撑晶片。 rf信号装置耦合到喷头和晶片支架，用于向喷头提供第一rf信号，并将第二rf信号耦合到晶片支架。

    Adjustable 3D capacitor
    8.
    发明授权
    Adjustable 3D capacitor 有权

    公开(公告)号：US07067869B2

    公开(公告)日：2006-06-27

    申请号：US10755495

    申请日：2004-01-12

    申请人： Wei Hua Cheng ,  Daniel Yen ,  Chit Hwei Ng ,  Marvin Liao

    发明人： Wei Hua Cheng ,  Daniel Yen ,  Chit Hwei Ng ,  Marvin Liao

    IPC分类号： H01L29/92

    CPC分类号： H01G4/33 ,  H01G4/005 ,  H01G4/228 ,  H01L23/5223 ,  H01L27/0805 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

    摘要： There is a need for adjustable capacitors for use in LC or RC matching networks in micro-circuits. This has been achieved by forming a set of individual capacitors that share a common bottom electrode. The areas of the top electrodes of these individual capacitors are chosen to be in an integral ratio to one another so that they can be combined to produce any capacitance within a range of unit values. For example, if four capacitors whose areas are in the ratio of 5:2:1:1, are provided, then any capacitance in a range of from 1 to 9 can be generated, depending on how the top electrodes are connected. Such connections can be hard-wired within the final wiring level to provide a factory adjustable capacitor or they can be connected through field programmable devices to produce a field programmable capacitor. A process for manufacturing the device is also described.

    Adjustable 3D capacitor
    9.
    发明授权
    Adjustable 3D capacitor 失效

    公开(公告)号：US06689643B2

    公开(公告)日：2004-02-10

    申请号：US10132337

    申请日：2002-04-25

    申请人： Wei Hua Cheng ,  Daniel Yen ,  Chit Hwei Ng ,  Marvin Liao

    发明人： Wei Hua Cheng ,  Daniel Yen ,  Chit Hwei Ng ,  Marvin Liao

    IPC分类号： H01L2182

    CPC分类号： H01G4/33 ,  H01G4/005 ,  H01G4/228 ,  H01L23/5223 ,  H01L27/0805 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

    摘要： There is a need for adjustable capacitors for use in LC or RC matching networks in micro-circuits. This has been achieved by forming a set of individual capacitors that share a common bottom electrode. The areas of the top electrodes of these individual capacitors are chosen to be in an integral ratio to one another so that they can be combined to produce any capacitance within a range of unit values. For example, if four capacitors whose areas are in the ratio of 5:2:1:1, are provided, then any capacitance in a range of from 1 to 9 can be generated, depending on how the top electrodes are connected. Such connections can be hard-wired within the final wiring level to provide a factory adjustable capacitor or they can be connected through field programmable devices to produce a field programmable capacitor. A process for manufacturing the device is also described.