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1.发明授权
公开(公告)号：US4156935A
公开(公告)日：1979-05-29
申请号：US795475
申请日：1977-05-10
CPC分类号： G11C19/0858 , G11C19/0866 , G11C19/0883
摘要： Magnetic bubble domain memory circuit in which magnetizable overlay patterns of magnetically soft material, e.g. permalloy, are provided as bubble propagation elements on a bubble-supporting magnetic layer to define major and minor bubble propagation paths. The major bubble propagation paths provide interchangeable bubble input and output sections, and the minor bubble propagation paths are in the form of closed storage loops providing a bubble storage section comprising first and second pairs of blocks. Bubble generators are provided for each of the blocks included in the first and second pairs thereof comprising the bubble storage section, along with first and second detectors and input/output tracks of bubble propagation elements associated with the respective pairs of blocks of storage loops. Swap transfer/replicate gates are disposed between the input/output tracks and each of the storage loops included in the blocks of storage loops. These gates are alternately operable in a swap transfer mode and a replicate mode so as to simultaneously transfer data as represented by magnetic bubbles and voids from the tracks to the storage loops and from the storage loops to the tracks when operated in a swap transfer mode, and to split respective magnetic bubbles incident thereon in a replicate mode to form a duplicate magnetic bubble in addition to the original magnetic bubble so as to preserve the data intact in the minor storage loop while delivering a bubble to a detector for readout. The first and second bubble detectors are 180.degree. out of phase with respect to each other and are operable during respective halfcycles of a bubble propagation cycle to sense the presence or absence of magnetic bubbles. Thus, respective data bits from different blocks are alternately sensed by the first and second bubble detectors in each bubble propagation cycle to provide a data readout rate twice the field rate.
摘要翻译： 磁性气泡域记忆电路，其中磁性软材料的可磁化覆盖图案，例如， 坡莫合金作为气泡传播元件提供在气泡支撑磁性层上以限定主要和次要的气泡传播路径。 主要的气泡传播路径提供了可互换的气泡输入和输出部分，并且次要的气泡传播路径是封闭存储回路的形式，提供包括第一和第二对块的气泡存储部分。 为包括在包括气泡存储部分的第一和第二对中的每个块以及与相应的存储循环块对相关联的气泡传播元件的第一和第二检测器和输入/输出轨道提供气泡发生器。 交换传输/复制门被布置在输入/输出轨道和包含在存储循环块中的每个存储回路之间。 这些栅极交替地可操作在交换传输模式和复制模式中，以便当以交换传输模式操作时，将由磁性气泡和空隙表示的数据从轨道同时传送到存储环路和从存储环路到轨道， 并且以复制模式分离入射在其上的各个磁性气泡，以便除了原始磁性气泡之外还形成一个重复的磁性气泡，从而将数据保存在次要存储环路中，同时将气泡传送到检测器进行读出。 第一和第二气泡检测器相对于彼此为180度异相，并且可在气泡传播周期的相应半周期期间操作以感测磁性气泡的存在或不存在。 因此，在每个气泡传播周期中，来自不同块的相应数据位由第一和第二气泡检测器交替地感测，以提供两倍于场速率的数据读出速率。
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2.发明授权
公开(公告)号：US4152776A
公开(公告)日：1979-05-01
申请号：US783996
申请日：1977-04-04
IPC分类号： G11C19/08
CPC分类号： G11C19/0883 , G11C19/0858
摘要： Magnetic bubble domain memory circuit in which magnetizable overlay patterns of magnetically soft material, e.g. permalloy, are provided as bubble propagation elements on a bubble-supporting magnetic layer to define major and minor bubble propagation paths. The bubble propagation elements are arranged to form major propagation paths defining a bubble input section and a bubble output section respectively. A plurality of minor propagation paths in the form of closed storage loops defining a bubble storage section are disposed between the input and output bubble sections, being arranged in even and odd blocks of minor propagation paths. Input swap transfer gates and output replicate gates are provided between the bubble storage loops and the input and output sections respectively. The input swap transfer gates and the output replicate gates are of double level construction, each type of gate including a hairpin element at the first level and a 90.degree. hook-like element at the second level which is correlated into bubble propagation elements included in a minor storage loop. The 90.degree. hook-like elements of corresponding swap transfer and replicate gates are respectively situated at the input and output ends of the minor storage loops, forming the opposite bights of the loop. Bubble generators and detectors are associated with the input and output bubble sections respectively at the opposite ends of the minor storage loops to provide a magnetic bubble domain memory chip for data processing purposes. Data as represented by the presence or absence of a magnetic bubble is transferred into the minor storage loops and replicated outwardly therefrom into the bubble output section for detection in a manner enabling such data to be received by the bubble detector for readout at the field rate.
摘要翻译： 磁性气泡域记忆电路，其中磁性软材料的可磁化覆盖图案，例如， 坡莫合金作为气泡传播元件提供在气泡支撑磁性层上以限定主要和次要的气泡传播路径。 气泡传播元件被布置成分别形成限定气泡输入部分和气泡输出部分的主要传播路径。 定义气泡存储部分的闭合存储回路形式的多个次要传播路径被布置在输入和输出气泡部分之间，被布置在小的传播路径的偶数和奇数块中。 输入交换传输门和输出复制门分别设置在气泡存储回路与输入和输出部分之间。 输入交换传输门和输出复制门是双层结构，每种类型的门包括第一级的发夹元件和第二级的90度钩形元件，其与包括在第一级中的气泡传播元件相关联 次要存储循环。 相应的交换传输和复制门的90°钩形元件分别位于次要存储环的输入和输出端，形成环路的相反的弯道。 气泡生成器和检测器分别与次要存储回路的相对端处的输入和输出气泡部分相关联，以提供用于数据处理目的的磁性气泡区域存储芯片。 由磁性气泡的存在或不存在所表示的数据被传送到次要储存环中并从其向外复制到气泡输出部分中，以便以使得这样的数据能够被气泡检测器接收以便以场速读出的方式进行检测。
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3.发明授权Method of fabricating magnetic bubble memory device having planar overlay pattern of magnetically soft material 失效制造具有磁性软材料的平面重叠图案的磁性气泡存储装置的方法
公开(公告)号：US4299680A
公开(公告)日：1981-11-10
申请号：US108888
申请日：1979-12-31
IPC分类号： G11C11/14 , G11C19/08 , H01F10/08 , H01F41/34 , H01L21/302 , H01L21/3065 , C23C15/00 , C23F1/02
CPC分类号： H01F41/34
摘要： Method of fabricating a magnetic bubble memory device in which the magnetizable upper overlay pattern of magnetically soft material, e.g. permalloy, defining bubble propagation elements and bubble function-determining components as located above a bubble-supporting magnetic film is disposed in a wholly planar configuration to avoid bubble propagation anomalies encountered with typical non-planar overlay patterns of magnetically soft material. The fabrication method provides for the consecutive deposition onto a substrate having a magnetic film capable of supporting magnetic bubbles of a layer of non-magnetic electrically conductive material, a layer of insulating material, and a layer of magnetically soft material, such as permalloy. Patterning of the layers then proceeds from the uppermost layer downwardly in stages to form magnetically soft components defining the elements of magnetic bubble propagation paths and magnetic bubble function-determining components as a planar upper overlay pattern from the layer of magnetically soft material, insulation spacers from the layer of insulating material, and control conductors as a planar lower overlay pattern from the layer of non-magnetic electrically conductive material. Patterning of the respective layers is preferably achieved by ion milling of selected portions of the layer of magnetically soft material as defined by a first mask and by sequential plasma etching of selected portions of the underlying layer of insulating material and the layer of non-magnetic electrically conductive material as defined by a second composite mask partially comprising the overlay pattern of magnetically soft material and photoresist material.
摘要翻译： 制造磁性气泡存储装置的方法，其中磁性软材料的可磁化上覆盖图案，例如， 坡莫合金，定义气泡传播元件和气泡功能确定部件位于泡沫支撑磁性膜之上，以完全平面的形式设置，以避免在磁性软材料的典型非平面覆盖图案中遇到气泡传播异常。 该制造方法提供了连续沉积到具有能够支撑非磁性导电材料层的磁性膜，绝缘材料层和诸如坡莫合金的磁软材料层的磁性膜的基板上。 层的图案化然后从最上层逐级进行，以形成磁性软组分，其限定磁性气泡传播路径的元素和磁气泡函数确定组分作为来自磁软材料层的平面上覆盖图案，绝缘间隔物 绝缘材料层，以及作为来自非磁性导电材料层的平面下覆盖图案的控制导体。 各层的图案化优选通过对由第一掩模限定的软磁性材料层的选定部分进行离子研磨，并且通过顺序等离子体蚀刻绝缘材料的下层的选定部分和非磁性电学层 由第二复合掩模限定的导电材料部分地包括磁软材料和光致抗蚀剂材料的覆盖图案。
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公开(公告)号：US09064628B2
公开(公告)日：2015-06-23
申请号：US13477978
申请日：2012-05-22
申请人： Robert E. Fontana, Jr. , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
发明人： Robert E. Fontana, Jr. , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
CPC分类号： H01F27/2804 , H01F5/00 , H01F17/0013 , H01F2017/0066 , H01F2017/0086 , H01F2027/2809 , H01L28/10
摘要： A thin film coupled inductor, a thin film spiral inductor, and a system that includes an electronic device and a power supply or power converter incorporating one or more such inductors. A thin film coupled inductor includes a wafer substrate; a bottom yoke comprising a magnetic material above the wafer substrate; a first insulating layer above the bottom yoke; a first conductor above the bottom yoke and separated therefrom by the first insulating layer; a second insulating layer above the first conductor; a second conductor above the second insulating layer; a third insulating layer above the second conductor; and a non-planar top yoke above the third insulating layer, the top yoke comprising a magnetic material.
摘要翻译： 薄膜耦合电感器，薄膜螺旋电感器以及包括电子器件和并入一个或多个此类电感器的电源或功率转换器的系统。 薄膜耦合电感器包括晶片衬底; 底部轭，其包括晶片衬底上方的磁性材料; 在底部轭上方的第一绝缘层; 第一导体，位于底部磁轭之上并由第一绝缘层分离; 在所述第一导体上方的第二绝缘层; 在第二绝缘层上方的第二导体; 在第二导体上方的第三绝缘层; 以及在第三绝缘层上方的非平面顶部磁轭，顶部磁轭包括磁性材料。
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5.发明授权Magnetoresistive sensor having a structure for activating and deactivating electrostatic discharge prevention circuitry 有权具有用于激活和去激活静电放电防止电路的结构的磁阻传感器公开(公告)号：US08634168B2
公开(公告)日：2014-01-21
申请号：US13433192
申请日：2012-03-28
申请人： Thomas Robert Albrecht , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Timothy Clark Reiley , Xiao Z. Wu
发明人： Thomas Robert Albrecht , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Timothy Clark Reiley , Xiao Z. Wu
CPC分类号： G11B5/40
摘要： A structure for preventing Electrostatic Discharge (ESD) damage to a magnetoresistive sensor during manufacture. The structure includes a switching element that can be switched off during testing of the sensor and then switched back on to provide ESD shunting to the sensor. The switch can be a thermally activated mechanical relay built onto the slider. The switch could also be a programmable resistor that includes a solid electrolyte sandwiched between first and second electrodes. One of the electrodes functions as an anode. When voltage is applied in a first direction an ion bridge forms across through the electrolyte across electrodes making the resistor conductive. When a voltage is applied in a second direction, the ion bridge recedes and the programmable resistor becomes essentially non-conductive.
摘要翻译： 用于在制造期间防止静电放电（ESD）损坏磁阻传感器的结构。 该结构包括开关元件，该开关元件可以在测试传感器期间关闭，然后重新接通以向传感器提供ESD分流。 开关可以是内置在滑块上的热激活机械继电器。 开关也可以是可编程电阻器，其包括夹在第一和第二电极之间的固体电解质。 电极之一用作阳极。 当沿第一方向施加电压时，离子桥跨越电解质跨过电极跨过电极，使电阻器导电。 当沿第二个方向施加电压时，离子桥退出，可编程电阻基本上不导电。
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公开(公告)号：US08059373B2
公开(公告)日：2011-11-15
申请号：US11549879
申请日：2006-10-16
IPC分类号： G11B5/33
CPC分类号： G11B5/3993
摘要： Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a quantum well comprising a two-dimensional electron gas (2DEG) or hole gas (2DHG). The magnetic sensing chip also includes one or more transistors formed on the substrate from the multiple semiconductor layers. The transistor(s) likewise include a quantum well comprising a 2DEG or 2DHG. The EMR sensor and the transistor(s) are connected by one or more connections so that the transistor(s) amplifies data signals from the EMR sensor.
摘要翻译： 公开了磁感测芯片和制造磁感测芯片的方法。 如本文所述的磁传感芯片包括形成在来自多个半导体层的衬底上的EMR传感器。 一个或多个半导体层形成包含二维电子气（2DEG）或空穴气体（2DHG）的量子阱。 磁感测芯片还包括从多个半导体层形成在衬底上的一个或多个晶体管。 晶体管同样包括包含2DEG或2DHG的量子阱。 EMR传感器和晶体管通过一个或多个连接连接，使得晶体管放大来自EMR传感器的数据信号。
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7.发明授权公开(公告)号：US08045299B2
公开(公告)日：2011-10-25
申请号：US11558532
申请日：2006-11-10
IPC分类号： G11B5/39
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/012 , G11B5/3133 , G11B5/3163 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3967 , G11B5/40 , G11B2005/3996 , H01F41/308 , H01L43/12
摘要： A method and apparatus for oxidizing conductive redeposition in TMR sensors is disclosed. A TMR stack having a first electrode that includes at least a pinned layer and an antiferromagnetic (AFM) layer, a second electrode that includes a free layer and a tunnel barrier is formed. The TMR barrier layer is etched. Redeposition material is oxidized and the barrier is healed using an oxidizing agent selected from the group consisting of ozone and water vapor.
摘要翻译： 公开了用于氧化TMR传感器中的导电再沉积的方法和装置。 一种具有至少包括被钉扎层和反铁磁性（AFM）层的第一电极的TMR堆叠，形成包括自由层和隧道势垒的第二电极。 蚀刻TMR阻挡层。 再沉积材料被氧化，并且使用选自臭氧和水蒸气的氧化剂使屏障愈合。
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8.发明授权公开(公告)号：US07839607B2
公开(公告)日：2010-11-23
申请号：US11890868
申请日：2007-08-07
IPC分类号： G11B5/127
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T428/1171
摘要： A method is presented for fabricating a CPP read head having a CPP read head sensor and a hard bias layer which includes forming a strip of sensor material in a sensor material region, and depositing strips of fast-milling dielectric material in first and second fast-milling dielectric material regions adjacent to the sensor material region. A protective layer and a layer of masking material are deposited on the strip of sensor material and the strips of fast-milling dielectric material to provide masked areas and exposed areas. A shaping source, such as an ion milling source, is provided which shapes the exposed areas. Hard bias material is then deposited on the regions of sensor material and fast-milling dielectric material to form caps on each of these regions. The caps of hard bias material and the masking material are then removed from each of these regions.
摘要翻译： 提出了一种用于制造具有CPP读取头传感器和硬偏置层的CPP读取头的方法，该CPP读取头包括在传感器材料区域中形成传感器材料条，以及将快速研磨电介质材料的条带放置在第一和第二快速接头中， 研磨与传感器材料区域相邻的介电材料区域。 保护层和掩蔽材料层沉积在传感器材料条和快速研磨电介质材料条上，以提供掩蔽区域和暴露区域。 提供成形源，例如离子铣削源，其形成暴露的区域。 然后将硬偏置材料沉积在传感器材料和快速研磨电介质材料的区域上，以在这些区域中的每一个上形成盖。 然后从这些区域中的每一个去除硬偏置材料的盖子和掩模材料。
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公开(公告)号：US07615771B2
公开(公告)日：2009-11-10
申请号：US11380498
申请日：2006-04-27
IPC分类号： H01L27/20
CPC分类号： G11C11/16 , G11C11/1675
摘要： Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality of electrically conductive lines that cross over the first plurality of electrically conductive lines. The memory arrays also include a plurality of memory cells located between the first and second conductive lines. The memory cells are formed from a metallic material, such as FeRh, having the characteristic of a first order phase transition due to a change in temperature. The first order phase transition causes a corresponding change in resistivity of the metallic material.
摘要翻译： 公开了由交叉点存储器阵列组成的固态存储器。 交叉点存储器阵列包括跨越第一多个导电线的第一多个导电线和第二多个导电线。 存储器阵列还包括位于第一和第二导线之间的多个存储单元。 存储单元由诸如FeRh的金属材料形成，具有由温度变化引起的一阶相变的特性。 一阶相变导致金属材料的电阻率的相应变化。
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公开(公告)号：US07253991B2
公开(公告)日：2007-08-07
申请号：US10836918
申请日：2004-04-30
CPC分类号： G11B5/315 , G11B5/10 , G11B5/1278
摘要： A magnetic head (slider) for perpendicular recording which requires no lapping is described. The head is fabricated with an air bearing surface that is parallel to the wafer surface. The coil and pole pieces are formed from thin films disposed parallel to the air bearing surface. Standard lithographic techniques can be used to define the shapes, gaps and pole piece dimensions. Non-rectilinear shapes can be formed; for example, side shields that conform around the write pole piece region. The thickness of the main and return pole pieces are controlled by the deposition process rather than by lapping. The saw cuts used to separate the individual sliders from the rest of the wafer are perpendicular to the air-bearing surface and do not pass through any critical features.
摘要翻译： 描述了不需要研磨的用于垂直记录的磁头（滑块）。 该头部具有平行于晶片表面的空气轴承表面。 线圈和极片由平行于空气轴承表面设置的薄膜形成。 标准光刻技术可用于定义形状，间隙和极片尺寸。 可以形成非直线形状; 例如，围绕写入极片区域的侧面屏蔽。 主回极片和返回极片的厚度由沉积过程而不是研磨来控制。 用于将各个滑块与其余的晶片分开的锯切板垂直于空气轴承表面，并且不通过任何关键特征。
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