公开(公告)号：US5851299A

公开(公告)日：1998-12-22

申请号：US218209

申请日：1994-03-25

Applicant: David Cheng ,  Mei Chang

Inventor： David Cheng ,  Mei Chang

IPC: C23C14/50 ,  C23C16/00 ,  C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C14/00 ,  C23F1/00 ,  H01L21/00

CPC classification number: C23C16/45521 ,  C23C16/04 ,  C23C16/042 ,  C23C16/4585

Abstract: An improved apparatus for CVD processing is described wherein a wafer mounted on a vertically movable susceptor beneath a gas outlet or showerhead is raised into contact with a shield ring which normally rests on a ring support in the chamber. The shield ring engages the frontside edge of the wafer, lifting the shield ring off its support, when the susceptor and the wafer are raised to a deposition position in the chamber. The shield ring, by engaging the frontside edge of the wafer, shields the edge of the top surface of the wafer, as well as the end edge and the backside of the wafer, during the deposition. Matching tapered edges, respectively, on the susceptor and the shield ring permit alignment of the shield ring with respect to the susceptor, and alignment of the wafer to the susceptor and the shield ring. Alignment means are also disclosed to circularly align the shield ring to its support in the chamber. Multi-unit shield rings permit the use of wider shield rings and prevent cracking of the shield ring due to thermal stresses caused by temperature differences near and away from the wafer during processing. These shield rings may also have tapered edges to ensure alignment of the rings with respect to each other.

Abstract translation: 描述了用于CVD处理的改进的装置，其中安装在气体出口或喷头下方的可垂直移动的基座上的晶片升高成与屏蔽环接触，屏蔽环通常位于室中的环支撑件上。 当基座和晶片升高到腔室中的沉积位置时，屏蔽环接合晶片的前边缘，将屏蔽环从支撑件上提起。 通过接合晶片的前边缘的屏蔽环在沉积期间屏蔽晶片的顶表面的边缘以及晶片的端边缘和后侧。 在基座和屏蔽环上分别配合锥形边缘允许屏蔽环相对于基座对准，并且将晶片对准基座和屏蔽环。 还公开了对准装置，以将屏蔽环圆形对准其室中的支撑件。 多单元屏蔽环允许使用更宽的屏蔽环，并防止由于在处理期间靠近和远离晶片的温度差引起的热应力而导致的屏蔽环的开裂。 这些屏蔽环也可以具有锥形边缘以确保环相对于彼此的对准。

公开(公告)号：US5215619A

公开(公告)日：1993-06-01

申请号：US760848

申请日：1991-09-17

Applicant: David Cheng ,  Dan Maydan ,  Sasson Somekh ,  Kenneth R. Stalder ,  Dana L. Andrews ,  Mei Chang ,  John M. White ,  Jerry Y. K. Wong ,  Vladimir J. Zeitlin ,  David N. Wang

Inventor： David Cheng ,  Dan Maydan ,  Sasson Somekh ,  Kenneth R. Stalder ,  Dana L. Andrews ,  Mei Chang ,  John M. White ,  Jerry Y. K. Wong ,  Vladimir J. Zeitlin ,  David N. Wang

IPC: H01J37/32 ,  H01L21/00

CPC classification number: H01L21/67069 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32862

Abstract: A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.

Abstract translation: 公开了一种磁场增强型单晶片等离子体蚀刻反应器。 反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑阴极; 以及包括延伸穿过基座的晶片提升销和晶片夹紧环的整体晶片交换机构。 提升销和夹紧环通过单轴提升机构垂直移动，以从协作的外部机器人刀片接收晶片，将晶片夹紧到基座并将晶片返回到刀片。 电极冷却结合了用于电极体的水冷却和晶片和电极之间的热导率增强气体平行弓形界面，用于保持晶片表面冷却，尽管施加到电极的高功率密度。 气体馈通装置将冷却气体施加到RF供电的电极，而不会破坏气体。 为诸如夹紧环和气体歧管的表面提供保护涂层/诸如石英的材料层。 这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器，其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入现场自清洁能力。

公开(公告)号：US5028565A

公开(公告)日：1991-07-02

申请号：US398653

申请日：1989-08-25

Applicant: Mei Chang ,  Cissy Leung ,  David N. Wang ,  David Cheng

Inventor： Mei Chang ,  Cissy Leung ,  David N. Wang ,  David Cheng

IPC: C23C16/06 ,  C23C16/08 ,  C23C16/22 ,  C23C16/44 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768

CPC classification number: H01L21/76838 ,  H01L21/28556 ,  H01L21/32051 ,  Y10S148/025

Abstract: An improved process is disclosed for the deposition of a layer of tungsten on a semiconductor wafer in a vacuum chamber wherein the improvements comprise depositing tungsten on the semiconductor wafer in the presence of nitrogen gas to improve the reflectivity of the surface of the resulting layer of tungsten; maintaining the vacuum chamber at a pressure of from about 20 to 760 Torr to improve the deposition rate of the tungsten, as well as to improve the reflectivity of the tungsten surface; and, when needed, the additional step of forming a nucleation layer on the semiconductor layer prior to the step of depositing tungsten on the semiconductor wafer to improve the uniformity of the deposited tungsten layer.

公开(公告)号：US4962049A

公开(公告)日：1990-10-09

申请号：US337607

申请日：1989-04-13

Applicant: Mei Chang ,  David Cheng

Inventor： Mei Chang ,  David Cheng

IPC: C23C8/36 ,  C23C14/02 ,  C23C16/02 ,  H01L21/00 ,  H01L21/306 ,  H01L21/316 ,  H01L21/687

CPC classification number: H01L21/67069 ,  C23C14/022 ,  C23C16/0245 ,  C23C8/36 ,  H01L21/02046 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31612 ,  H01L21/6875 ,  Y10S438/906 ,  Y10S438/928

Abstract: A process is disclosed for the treatment of the backside or back surface of a semiconductor wafer such as a silicon wafer. By spacing the back side of a semiconductor wafer a predetermined distance from a cathode in a vacuum chamber and controlling the rf power and the pressure, a confined plasma may be used both to clean the back side of the wafer to remove impurities, including moisture and other occluded gases; as well as to deposit a layer of oxide on the back surface of the wafer to inhibit subsequent deposition of poorly adherent materials on the back side of the wafer which might otherwise flake off during processing of the front side of the wafer to form integrated circuits thereon.

公开(公告)号：US4842683A

公开(公告)日：1989-06-27

申请号：US185215

申请日：1988-04-25

Applicant: David Cheng ,  Dan Maydan ,  Sasson Somekh ,  Kenneth R. Stalder ,  Dana L. Andrews ,  Mei Chang ,  John M. White ,  Jerry Y. K. Wong ,  Vladimir J. Zeitlin ,  David N. Wang

Inventor： David Cheng ,  Dan Maydan ,  Sasson Somekh ,  Kenneth R. Stalder ,  Dana L. Andrews ,  Mei Chang ,  John M. White ,  Jerry Y. K. Wong ,  Vladimir J. Zeitlin ,  David N. Wang

IPC: H05H1/46 ,  B01J3/02 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32431 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32862

Abstract: A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.

Abstract translation: 公开了一种磁场增强型单晶片等离子体蚀刻反应器。 反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑阴极; 以及包括延伸穿过基座的晶片提升销和晶片夹紧环的整体晶片交换机构。 提升销和夹紧环通过单轴提升机构垂直移动，以从配合的外部机器人刀片接收晶片，将晶片夹紧到基座并将晶片返回到刀片。 电极冷却结合了用于电极体的水冷却和晶片和电极之间的热导率增强气体平行弓形界面，用于保持晶片表面冷却，尽管施加到电极的高功率密度。 气体馈通装置将冷却气体施加到RF供电的电极，而不会破坏气体。 为诸如夹紧环和气体歧管的表面提供保护涂层/诸如石英的材料层。 这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器，其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入现场自清洁能力。

公开(公告)号：USD599707S1

公开(公告)日：2009-09-08

申请号：US29327927

申请日：2008-11-14

Applicant: David Cheng ,  Jason Matthew Wilbur

Designer： David Cheng ,  Jason Matthew Wilbur

公开(公告)号：US20080089774A1

公开(公告)日：2008-04-17

申请号：US11929357

申请日：2007-10-30

Applicant: J.B. Price ,  Jed Keller ,  Laurence Dulmage ,  David Cheng

Inventor： J.B. Price ,  Jed Keller ,  Laurence Dulmage ,  David Cheng

IPC: H01L21/677

CPC classification number: H01L21/67178 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67742 ,  H01L21/67766 ,  Y10S414/139

Abstract: A method and apparatus for semiconductor processing is disclosed. In one embodiment, a method of transporting a wafer within a cluster tool, comprises placing the wafer into a first segment of a vacuum enclosure, the vacuum enclosure being attached to a processing chamber and a factory interface. The wafer is transported to a second segment of the vacuum enclosure using a vertical transport mechanism, wherein the second segment is above or below the first segment.

Abstract translation: 公开了一种用于半导体处理的方法和装置。 在一个实施例中，一种在群集工具内传送晶片的方法包括将晶片放置在真空封壳的第一段中，真空外壳附接到处理室和工厂接口。 使用垂直传送机构将晶片传送到真空外壳的第二部分，其中第二部分在第一部分之上或之下。

公开(公告)号：US20070203875A1

公开(公告)日：2007-08-30

申请号：US11361848

申请日：2006-02-24

Applicant: Ellis Cave ,  David Cheng

Inventor： Ellis Cave ,  David Cheng

IPC: G06F17/30

CPC classification number: G06F16/148 ,  G06F16/68

Abstract: There is disclosed systems and methods for retrieving files from a file server using file attributes. In one embodiment, an audio file server is accessed to retrieve prerecorded audio files using file attributes. In one embodiment, the HTTP protocol is used by adding query attributes, such as a text version of the desired message, along with other required attributes of the audio file, to the audio file server. The audio file server accepts the attributes, including the message text attributes and parses them to resolve which audio (.wav) message to retrieve. The retrieved audio file is then returned to the voice browser, which normally plays the message. In this way, IVR application developers can specify the content, speaker, language, dialect, emotion, and other attributes of a required audio file utilizing standard voice browsers to access audio files.

Abstract translation: 公开了使用文件属性从文件服务器检索文件的系统和方法。 在一个实施例中，访问音频文件服务器以使用文件属性来检索预先记录的音频文件。 在一个实施例中，通过将诸如所需消息的文本版本的查询属性与音频文件的其他所需属性一起添加到音频文件服务器来使用HTTP协议。 音频文件服务器接受属性，包括消息文本属性，并解析它们以解析要检索哪个音频（.wav）消息。 检索到的音频文件然后返回到通常播放消息的语音浏览器。 这样，IVR应用程序开发人员可以使用标准语音浏览器来指定所需音频文件的内容，扬声器，语言，方言，情感和其他属性来访问音频文件。

公开(公告)号：US20060242080A1

公开(公告)日：2006-10-26

申请号：US11113216

申请日：2005-04-22

Applicant: Clifford Van Dyke ,  David Cheng ,  Siva Mohan

Inventor： Clifford Van Dyke ,  David Cheng ,  Siva Mohan

IPC: G06F17/60

CPC classification number: G06F21/10 ,  G06F21/00 ,  G06Q20/1235 ,  H04N2201/3246

Abstract: To communicate requirements for a digital license from a receiver of corresponding digital content to a computing device upon which the digital content is to be rendered, the receiver tunes the content and locates within the content information relating to the requirements for the license, constructs the requirements from the located information, and sends such constructed requirements to the computing device. The computing device upon receiving the sent requirements constructs the license based on such received requirements, stores such constructed license in a license store of such computing device, and thereafter renders the content only in accordance with the license. Thus, the receiver need not communicate the license itself to the computing device.

Abstract translation: 为了将来自相应数字内容的接收机的数字许可证的要求传达到要在其上呈现数字内容的计算设备，接收机调谐内容并定位在与许可证的要求相关的内容信息内，构建要求 从定位的信息，并将这种构造的要求发送到计算设备。 计算设备在接收到所发送的请求后，根据此类接收的要求构建许可证，将此类构造的许可证存储在该计算设备的许可证存储器中，然后仅根据许可证呈现内容。 因此，接收机不需要将许可证本身传送到计算设备。

公开(公告)号：US20060075025A1

公开(公告)日：2006-04-06

申请号：US10538439

申请日：2003-01-21

Applicant: David Cheng ,  Vivien Fung ,  Andrew Padilla

Inventor： David Cheng ,  Vivien Fung ,  Andrew Padilla

IPC: G06F15/16

CPC classification number: H04L41/06 ,  H04L41/026 ,  H04L41/046 ,  H04L41/0803 ,  H04L41/085 ,  H04L51/34 ,  H04L67/10 ,  H04L69/329

Abstract: In one embodiment of the present invention's a system for tracking and managing data over a computer network including a plurality of application computers each operating a computer software application program is provided, comprising a key master (106, 108); a system startup module (100) connected to the key master (106, 108); a gatekeeper (102) connected to the system startup module (100); as task manager (122, 124, 126, 128's 130) connected to the key master (106, 108) and the gatekeeper (102); a central database (112, 114, 116) connected to the gatekeeper (102); a plurality of agents (132, 134, 136, 138, 140) connected to the task manager; a plurality of sub-agents (142, 144, 146, 148, 150) independently connected to the plurality of agents (132, 134, 136, 138, 140) and the plurality of application computers (152, 154,156, 158, 160); and an alert dispatcher (104) connected to the system startup module (100) and the gatekeeper (102).

Abstract translation: 在本发明的一个实施例中，提供了一种用于在包括多个应用计算机的计算机网络上跟踪和管理数据的系统，每个应用计算机各自操作计算机软件应用程序，包括密钥主机（106,108）; 连接到所述键主机（106,108）的系统启动模块（100）; 连接到系统启动模块（100）的网闸（102）; 连接到密钥主机（106,108）和网守（102）的任务管理器（122,124,126,128,130）; 连接到关守（102）的中央数据库（112,114,116）; 连接到任务管理器的多个代理（132,134,136,138,140）; 独立地连接到多个代理（132,134,136,138,140）和多个应用计算机（152,154,156,158,160）的多个子代理（142,144,146,148,150） ; 以及连接到系统启动模块（100）和关守（102）的警报调度器（104）。