利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

14 条记录 (耗时 0.02 秒)

    Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom
    1.
    发明授权
    Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom 有权
    在有纹理的金属基底上形成导电氧化膜的方法和由其形成的制品

    公开(公告)号：US06296701B1

    公开(公告)日：2001-10-02

    申请号：US09163888

    申请日：1998-09-30

    申请人： David K. Christen ,  Qing He

    发明人： David K. Christen ,  Qing He

    IPC分类号： C30B2504

    CPC分类号： H01L39/2461 ,  C30B23/02 ,  C30B29/24

    摘要： The present invention provides a biaxially textured laminate article having a polycrystalline biaxially textured metallic substrate with an electrically conductive oxide layer epitaxially deposited thereon and methods for producing same. In one embodiment a biaxially texture Ni substrate has a layer of LaNiO3 deposited thereon. An initial layer of electrically conductive oxide buffer is epitaxially deposited using a sputtering technique using a sputtering gas which is an inert or forming gas. A subsequent layer of an electrically conductive oxide layer is then epitaxially deposited onto the initial layer using a sputtering gas comprising oxygen. The present invention will enable the formation of biaxially textured devices which include HTS wires and interconnects, large area or long length ferromagnetic and/or ferroelectric memory devices, large area or long length, flexible light emitting semiconductors, ferroelectric tapes, and electrodes.

    摘要翻译： 本发明提供一种双轴织构化层压制品，其具有外延沉积有导电氧化物层的多晶双轴织构金属基底及其制造方法。 在一个实施方案中，双轴织构Ni衬底具有沉积在其上的LaNiO 3层。 使用溅射气体（其是惰性或形成气体）使用溅射技术外延沉积初始的导电氧化物缓冲层。 然后使用包含氧气的溅射气体将随后的导电氧化物层外延沉积到初始层上。 本发明将能够形成包括HTS导线和互连的大面积或长长度铁磁和/或铁电存储器件，大面积或长长度，柔性发光半导体，铁电带和电极的双轴纹理化器件。

    Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom
    2.
    发明授权
    Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom 有权
    在有纹理的金属基底上形成导电氧化膜的方法和由其形成的制品

    公开(公告)号：US06555256B1

    公开(公告)日：2003-04-29

    申请号：US09706972

    申请日：2000-11-06

    申请人： David K. Christen ,  Qing He

    发明人： David K. Christen ,  Qing He

    IPC分类号： B23B1800

    CPC分类号： H01L39/2461 ,  C30B23/02 ,  C30B29/24

    摘要： The present invention provides a biaxially textured laminate article having a polycrystalline biaxially textured metallic substrate with an electrically conductive oxide layer epitaxially deposited thereon and methods for producing same. In one embodiment a biaxially texture Ni substrate has a layer of LaNiO3 deposited thereon. An initial layer of electrically conductive oxide buffer is epitaxially deposited using a sputtering technique using a sputtering gas which is an inert or forming gas. A subsequent layer of an electrically conductive oxide layer is then epitaxially deposited onto the initial layer using a sputtering gas comprising oxygen. The present invention will enable the formation of biaxially textured devices which include HTS wires and interconnects, large area or long length ferromagnetic and/or ferroelectric memory devices, large area or long length, flexible light emitting semiconductors, ferroelectric tapes, and electrodes.

    摘要翻译： 本发明提供一种双轴织构化层压制品，其具有外延沉积有导电氧化物层的多晶双轴织构金属基底及其制造方法。 在一个实施方案中，双轴织构Ni衬底具有沉积在其上的LaNiO 3层。 使用溅射气体（其是惰性或形成气体）使用溅射技术外延沉积初始的导电氧化物缓冲层。 然后使用包含氧气的溅射气体将随后的导电氧化物层外延沉积到初始层上。 本发明将能够形成包括HTS导线和互连的大面积或长长度铁磁和/或铁电存储器件，大面积或长长度，柔性发光半导体，铁电带和电极的双轴纹理化器件。

    Hetero-junction photovoltaic device and method of fabricating the device
    5.
    发明授权
    Hetero-junction photovoltaic device and method of fabricating the device 有权
    异质结光伏器件及其制造方法

    公开(公告)号：US08647915B2

    公开(公告)日：2014-02-11

    申请号：US12974425

    申请日：2010-12-21

    申请人： Tolga Aytug ,  David K. Christen ,  Mariappan Parans Paranthaman ,  Özgur Polat

    发明人： Tolga Aytug ,  David K. Christen ,  Mariappan Parans Paranthaman ,  Özgur Polat

    IPC分类号： H01L31/0352 ,  H01L31/18

    CPC分类号： H01L31/035281 ,  H01L31/032 ,  H01L31/047 ,  H01L31/072 ,  H01L31/18 ,  Y02E10/50

    摘要： A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material. An oxidation state of at least a portion of one of the p-type or the n-type semiconductor materials is altered relative to the other, such that the band-gap energy of the semiconductor materials differ with respect to stoichiometric compositions and the device preferentially absorbs particular selected bands of radiation.

    摘要翻译： 一种异相结器件和制造方法，其中相分离的n型和p型半导体柱限定在衬底上方延伸的垂直取向的p-n结。 选择半导体材料用于热力学稳定且基本上彼此不溶的p型和n型支柱。 使用外延沉积工艺在成核层上形成支柱，并且相互不溶性驱动材料的相分离。 在外延沉积工艺期间，取向是使成核层开始垂直列的传播，导致整个沉积材料的基本有序的三维结构。 p型或n型半导体材料中的一种的至少一部分的氧化态相对于另一种改变，使得半导体材料的带隙能量相对于化学计量组成不同，并且器件优先 吸收特定选定的辐射带。

    Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom
    6.
    发明授权
    Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom 有权
    在纹理基底上沉积导电氧化物缓冲层的方法和由其形成的制品

    公开(公告)号：US06956012B2

    公开(公告)日：2005-10-18

    申请号：US10422244

    申请日：2003-04-24

    申请人： M. Parans Paranthaman ,  Tolga Aytug ,  David K. Christen

    发明人： M. Parans Paranthaman ,  Tolga Aytug ,  David K. Christen

    IPC分类号： C23C14/02 ,  C23C14/08 ,  C30B23/02 ,  H01L39/24 ,  B05D5/12

    CPC分类号： H01L39/2461 ,  C23C14/024 ,  C23C14/087 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10S428/93

    摘要： An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

    摘要翻译： 具有改进的缓冲层结构的制品包括具有纹理金属表面的基底和在基底表面上的导电镧金属氧化物外延缓冲层。 该物品还可以包括沉积在外延缓冲层上的外延超导层。 外延封装层可以放置在外延缓冲层和超导层之间。 制备外延制品的方法包括：向基底提供金属表面，并在金属表面上沉积金属氧化镧外延缓冲层。 该方法还可以包括在外延缓冲层上沉积超导层，以及在外延缓冲层和超导层之间沉积外延覆盖层。

    HETERO-JUNCTION PHOTOVOLTAIC DEVICE AND METHOD OF FABRICATING THE DEVICE
    7.
    发明申请
    HETERO-JUNCTION PHOTOVOLTAIC DEVICE AND METHOD OF FABRICATING THE DEVICE 有权
    异相结构光电器件及其制造方法

    公开(公告)号：US20120152337A1

    公开(公告)日：2012-06-21

    申请号：US12974425

    申请日：2010-12-21

    申请人： Tolga Aytug ,  David K. Christen ,  Mariappan Parans Paranthaman ,  Özgur Polat

    发明人： Tolga Aytug ,  David K. Christen ,  Mariappan Parans Paranthaman ,  Özgur Polat

    IPC分类号： H01L31/0352 ,  H01L31/18

    CPC分类号： H01L31/035281 ,  H01L31/032 ,  H01L31/047 ,  H01L31/072 ,  H01L31/18 ,  Y02E10/50

    摘要： A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material. An oxidation state of at least a portion of one of the p-type or the n-type semiconductor materials is altered relative to the other, such that the band-gap energy of the semiconductor materials differ with respect to stoichiometric compositions and the device preferentially absorbs particular selected bands of radiation.

    摘要翻译： 一种异相结器件和制造方法，其中相分离的n型和p型半导体柱限定在衬底上方延伸的垂直取向的p-n结。 选择半导体材料用于热力学稳定且基本上彼此不溶的p型和n型支柱。 使用外延沉积工艺在成核层上形成支柱，并且相互不溶性驱动材料的相分离。 在外延沉积工艺期间，取向是使成核层开始垂直列的传播，导致整个沉积材料的基本有序的三维结构。 p型或n型半导体材料中的一种的至少一部分的氧化态相对于另一种改变，使得半导体材料的带隙能量相对于化学计量组成不同，并且器件优先 吸收特定选定的辐射带。

    Superhydrophobic transparent glass (STG) thin film articles
    10.
    发明授权
    Superhydrophobic transparent glass (STG) thin film articles 有权
    超疏水透明玻璃（STG）薄膜制品

    公开(公告)号：US08741158B2

    公开(公告)日：2014-06-03

    申请号：US12915183

    申请日：2010-10-29

    申请人： Tolga Aytug ,  John T. Simpson ,  David K. Christen

    发明人： Tolga Aytug ,  John T. Simpson ,  David K. Christen

    IPC分类号： B44C1/22

    CPC分类号： B44C1/22 ,  B82Y30/00 ,  B82Y40/00 ,  C03C3/04 ,  C03C15/00 ,  C03C17/00 ,  C03C17/002 ,  C03C17/02 ,  C03C17/34 ,  C03C2217/425 ,  C03C2217/76 ,  C03C2218/33 ,  C23C14/10 ,  C23C14/58 ,  C23C14/5806 ,  C23C14/5873 ,  Y10T428/24355 ,  Y10T428/24364

    摘要： An article having a nanostructured surface and a method of making the same are described. The article can include a substrate and a nanostructured layer bonded to the substrate. The nanostructured layer can include a plurality of spaced apart nanostructured features comprising a contiguous, protrusive material and the nanostructured features can be sufficiently small that the nanostructured layer is optically transparent. A surface of the nanostructured features can be coated with a continuous hydrophobic coating. The method can include providing a substrate; depositing a film on the substrate; decomposing the film to form a decomposed film; and etching the decomposed film to form the nanostructured layer.

    摘要翻译： 描述了具有纳米结构表面的制品及其制备方法。 该制品可以包括基底和结合到基底的纳米结构层。 纳米结构层可以包括多个间隔开的纳米结构特征，其包括邻接的突出材料，并且纳米结构特征可以足够小，使得纳米结构层是光学透明的。 纳米结构特征的表面可以用连续疏水涂层涂覆。 该方法可以包括提供基底; 在基板上沉积膜; 分解膜以形成分解膜; 并蚀刻分解的膜以形成纳米结构层。