公开(公告)号：US20120147906A1

公开(公告)日：2012-06-14

申请号：US12966394

申请日：2010-12-13

申请人： David L. Williams ,  Andrew Clark ,  Michael Lebby

发明人： David L. Williams ,  Andrew Clark ,  Michael Lebby

IPC分类号： H01S3/30 ,  H01L21/30

CPC分类号： H01L23/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A laser cooling system includes a substrate, an REO layer of single crystal rare earth oxide including at least one rare earth element positioned on the surface of the substrate, and an active layer of single crystal semiconductor material positioned on the REO layer to form a semiconductor-on-insulator (SOI) device. Light guiding structure is at least partially formed by the REO layer so as to introduce energy elements into the REO layer and produce cooling by anti-Stokes fluorescence. The active layer of single crystal semiconductor material is positioned on the REO layer in proximity to the light guiding structure so as to receive the cooling.

摘要翻译： 激光冷却系统包括基板，包括位于基板表面上的至少一个稀土元素的单晶稀土氧化物的REO层和位于REO层上以形成半导体的单晶半导体材料的有源层 绝缘体（SOI）器件。 导光结构至少部分地由REO层形成，以便将能量元素引入REO层并通过反斯托克斯荧光产生冷却。 单晶半导体材料的有源层位于靠近导光结构的REO层上，以便接收冷却。

公开(公告)号：US20120145243A1

公开(公告)日：2012-06-14

申请号：US12965376

申请日：2010-12-10

申请人： David L. Williams ,  Andrew Clark ,  Michael Lebby

发明人： David L. Williams ,  Andrew Clark ,  Michael Lebby

IPC分类号： H01L31/02 ,  H01L31/0256

CPC分类号： H01L31/055 ,  G02F2/02 ,  H01L31/02322 ,  H01L31/0521 ,  Y02E10/52

摘要： A method of magnetically enhancing up-conversion components includes providing at least one of up-conversion material and sensitizer material (i.e. up-conversion components), generally in conjunction with a semiconductor solar cell, and positioning magnetic apparatus adjacent the up-conversion components to supply a magnetic field to the up-conversion components. The magnetic field has an intensity and direction selected to enhance operation of the up-conversion components.

摘要翻译： 一种磁力增强上变频部件的方法包括提供一般与半导体太阳能电池结合的向上转换材料和敏化剂材料（即上转换部件）中的至少一种，以及将上转换部件相邻的磁性装置定位到 向上转换部件提供磁场。 磁场具有选择的强度和方向，以增强上转换部件的操作。

公开(公告)号：US08794010B2

公开(公告)日：2014-08-05

申请号：US12966394

申请日：2010-12-13

申请人： David L. Williams ,  Andrew Clark ,  Michael Lebby

发明人： David L. Williams ,  Andrew Clark ,  Michael Lebby

IPC分类号： H01S3/30 ,  H01S3/034 ,  F25B23/00 ,  F25B21/00

CPC分类号： H01L23/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A laser cooling system includes a substrate, an REO layer of single crystal rare earth oxide including at least one rare earth element positioned on the surface of the substrate, and an active layer of single crystal semiconductor material positioned on the REO layer to form a semiconductor-on-insulator (SOI) device. Light guiding structure is at least partially formed by the REO layer so as to introduce energy elements into the REO layer and produce cooling by anti-Stokes fluorescence. The active layer of single crystal semiconductor material is positioned on the REO layer in proximity to the light guiding structure so as to receive the cooling.

摘要翻译： 激光冷却系统包括基板，包括位于基板表面上的至少一个稀土元素的单晶稀土氧化物的REO层和位于REO层上以形成半导体的单晶半导体材料的有源层 绝缘体（SOI）器件。 导光结构至少部分地由REO层形成，以便将能量元素引入REO层并通过反斯托克斯荧光产生冷却。 单晶半导体材料的有源层位于靠近导光结构的REO层上，以便接收冷却。

公开(公告)号：US08559097B2

公开(公告)日：2013-10-15

申请号：US12840538

申请日：2010-07-21

申请人： David L. Williams ,  Andrew Clark ,  Michael Lebby

发明人： David L. Williams ,  Andrew Clark ,  Michael Lebby

IPC分类号： H01S3/091 ,  H01S5/02

CPC分类号： H01S3/0632 ,  H01S3/0635 ,  H01S3/0637 ,  H01S3/0941 ,  H01S3/09415 ,  H01S3/1603 ,  H01S5/0207 ,  H01S5/0218 ,  H01S5/026 ,  H01S5/183 ,  H01S5/32341 ,  H01S5/42

摘要： A light amplifier includes a single crystal semiconductor substrate with a rare earth oxide, light amplifying gain medium deposited on the substrate and formed into a light waveguide, and a pump laser. A lattice matching virtual substrate integrates the pump laser to the gain medium with a first opposed surface crystal lattice matched to the gain medium and second opposed surface crystal lattice matched to the pump laser. The pump laser is positioned with a light output surface coupled to a light input surface of the gain medium so as to introduce pump energy into the light waveguide. The light amplifier has a very small footprint and allows the integration of control and monitoring electronics.

摘要翻译： 光放大器包括具有稀土氧化物的单晶半导体衬底，沉积在衬底上并形成光波导的光放大增益介质和泵浦激光器。 晶格匹配虚拟衬底将泵浦激光器与增益介质集成，其具有与与激光器匹配的增益介质和第二相对表面晶格匹配的第一相对表面晶格。 泵浦激光器定位成具有耦合到增益介质的光输入表面的光输出表面，以将泵浦能量引入到光波导中。 光放大器占地面积很小，可以集成控制和监控电子产品。

公开(公告)号：US20120019902A1

公开(公告)日：2012-01-26

申请号：US12840538

申请日：2010-07-21

申请人： David L. Williams ,  Andrew Clark ,  Michael Lebby

发明人： David L. Williams ,  Andrew Clark ,  Michael Lebby

IPC分类号： H01S3/00 ,  H01L21/30

CPC分类号： H01S3/0632 ,  H01S3/0635 ,  H01S3/0637 ,  H01S3/0941 ,  H01S3/09415 ,  H01S3/1603 ,  H01S5/0207 ,  H01S5/0218 ,  H01S5/026 ,  H01S5/183 ,  H01S5/32341 ,  H01S5/42

摘要： A light amplifier includes a single crystal semiconductor substrate with a rare earth oxide, light amplifying gain medium deposited on the substrate and formed into a light waveguide, and a pump laser. A lattice matching virtual substrate integrates the pump laser to the gain medium with a first opposed surface crystal lattice matched to the gain medium and second opposed surface crystal lattice matched to the pump laser. The pump laser is positioned with a light output surface coupled to a light input surface of the gain medium so as to introduce pump energy into the light waveguide. The light amplifier has a very small footprint and allows the integration of control and monitoring electronics.

摘要翻译： 光放大器包括具有稀土氧化物的单晶半导体衬底，沉积在衬底上并形成光波导的光放大增益介质和泵浦激光器。 晶格匹配虚拟衬底将泵浦激光器与增益介质集成，其具有与与激光器匹配的增益介质和第二相对表面晶格匹配的第一相对表面晶格。 泵浦激光器定位成具有耦合到增益介质的光输入表面的光输出表面，以将泵浦能量引入到光波导中。 光放大器占地面积很小，可以集成控制和监控电子产品。

公开(公告)号：US20190122885A1

公开(公告)日：2019-04-25

申请号：US16093521

申请日：2017-04-10

申请人： Rytis Dargis ,  Andrew Clark ,  Michael Lebby ,  Rodney Pelzel ,  IQE plc

发明人： Rytis Dargis ,  Andrew Clark ,  Michael Lebby ,  Rodney Pelzel

IPC分类号： H01L21/02 ,  H01L29/04

摘要： Layer structures are described for the formation of Group III-V semiconductor material over Si and Si . Various buffer layers and interfaces reduce the lattice strain between the Group III-V semiconductor material and the Si or Si layers, allowing for the epitaxial formation of high quality Group III-V semiconductor material.

公开(公告)号：US20160133708A1

公开(公告)日：2016-05-12

申请号：US14924047

申请日：2015-10-27

申请人： Rytis Dargis ,  Erdem Arkun ,  Radek Roucka ,  Andrew Clark ,  Michael Lebby

发明人： Rytis Dargis ,  Erdem Arkun ,  Radek Roucka ,  Andrew Clark ,  Michael Lebby

IPC分类号： H01L29/20 ,  H01L29/06 ,  H01L29/16

CPC分类号： H01L29/2003 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0254 ,  H01L29/0657 ,  H01L29/16

摘要： A method of fabricating a rare earth oxide buffered III-N on silicon wafer including providing a crystalline silicon substrate, depositing a rare earth oxide structure on the silicon substrate including one or more layers of single crystal rare earth oxide, and depositing a layer of single crystal III-N material on the rare earth oxide structure so as to form an interface between the rare earth oxide structure and the layer of single crystal III-N material. The layer of single crystal III-N material produces a tensile stress at the interface and the rare earth oxide structure has a compressive stress at the interface dependent upon a thickness of the rare earth oxide structure. The rare earth oxide structure is grown with a thickness sufficient to provide a compressive stress offsetting at least a portion of the tensile stress at the interface to substantially reduce bowing in the wafer.

公开(公告)号：US08823025B1

公开(公告)日：2014-09-02

申请号：US13772126

申请日：2013-02-20

申请人： Erdem Arkun ,  Michael Lebby ,  Andrew Clark ,  Rytis Dargis

发明人： Erdem Arkun ,  Michael Lebby ,  Andrew Clark ,  Rytis Dargis

IPC分类号： H01L33/00

CPC分类号： H01L29/205 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/778

摘要： III-N material grown on a silicon substrate includes a single crystal buffer positioned on a silicon substrate. The buffer is substantially crystal lattice matched to the surface of the silicon substrate and includes aluminum oxynitride adjacent the substrate and aluminum nitride adjacent the upper surface. A first layer of III-N material is positioned on the upper surface of the buffer. An inter-layer of aluminum nitride (AlN) is positioned on the first III-N layer and an additional layer of III-N material is positioned on the inter-layer. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer.

摘要翻译： 在硅衬底上生长的III-N材料包括位于硅衬底上的单晶缓冲器。 缓冲器基本上与硅衬底的表面晶格匹配，并且包括邻近衬底的氮氧化铝和与上表面相邻的氮化铝。 第一层III-N材料位于缓冲器的上表面上。 氮化铝（AlN）的层间位于第一III-N层上，并且在层之间设置附加的III-N材料层。 氮化铝层和III-N材料的附加层重复n次，以减少或设计最终III-N层的应变。

公开(公告)号：US20140077240A1

公开(公告)日：2014-03-20

申请号：US13621413

申请日：2012-09-17

申请人： Radek Roucka ,  Michael Lebby ,  Scott Semans ,  Andrew Clark

发明人： Radek Roucka ,  Michael Lebby ,  Scott Semans ,  Andrew Clark

IPC分类号： H01L31/0232 ,  H01L33/46

CPC分类号： H01L31/0232 ,  H01L31/02165 ,  H01L31/02327 ,  H01L31/056 ,  H01L31/1812 ,  H01L33/10 ,  H01L33/34 ,  H01L33/46 ,  Y02E10/52

摘要： A photonic structure including a substrate of either crystalline silicon or germanium and a multilayer distributed Bragg reflector (DBR) positioned on the substrate. The DBR includes material substantially crystal lattice matching the DBR to the substrate. The DBR includes a plurality of pairs of layers of material including any combination of IV materials and any rare earth oxide (REO). A photonic device including multilayers of single crystal IV material positioned on the DBR and including material substantially crystal lattice matching the DBR to the photonic device.

摘要翻译： 包括晶体硅或锗的衬底和位于衬底上的多层分布式布拉格反射器（DBR）的光子结构。 DBR包括与DBR相匹配的基本晶格的材料。 DBR包括多对材料层，包括IV材料和任何稀土氧化物（REO）的任何组合。 一种光子器件，包括位于DBR上的单晶IV材料的多层，并且包括与DBR与光子器件匹配的基本上晶格的材料。

公开(公告)号：US08623747B1

公开(公告)日：2014-01-07

申请号：US13717182

申请日：2012-12-17

申请人： Erdem Arkun ,  Michael Lebby ,  Andrew Clark

发明人： Erdem Arkun ,  Michael Lebby ,  Andrew Clark

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262

摘要： A method of forming a template on a silicon substrate includes providing a single crystal silicon substrate. The method further includes forming an aluminum oxide coating on the surface of the silicon substrate, the aluminum oxide being substantially crystal lattice matched to the surface of the silicon substrate and epitaxially depositing a layer of aluminum nitride (AlN) on the aluminum oxide coating substantially crystal lattice matched to the surface of the aluminum nitride.

摘要翻译： 在硅衬底上形成模板的方法包括提供单晶硅衬底。 所述方法还包括在所述硅衬底的表面上形成氧化铝涂层，所述氧化铝与所述硅衬底的表面基本上晶格匹配并在所述氧化铝涂层上外延沉积氮化铝层（AlN） 晶格与氮化铝的表面匹配。