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公开(公告)号：US5977612A
公开(公告)日：1999-11-02
申请号：US770403
申请日：1996-12-20
申请人： David P. Bour , Fernando A. Ponce , G. A. Neville Connell , Ross D. Bringans , Noble M. Johnson , Werner K. Goetz , Linda T. Romano
发明人： David P. Bour , Fernando A. Ponce , G. A. Neville Connell , Ross D. Bringans , Noble M. Johnson , Werner K. Goetz , Linda T. Romano
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/201 , H01L33/16 , H01S5/34333
摘要： The present invention relates to electronic devices formed in crystallites of III-V nitride materials. Specifically, the present invention simplifies the processing technology required for the fabrication of high-performance electronic devices in III-V nitride materials.
摘要翻译： 本发明涉及以III-V族氮化物材料微晶形成的电子器件。 具体地说，本发明简化了在III-V族氮化物材料中制造高性能电子器件所需的加工技术。
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2.发明授权Distributed feedback laser fabricated by lateral overgrowth of an active region 有权通过有源区域的横向过度生长制造的分布式反馈激光器公开(公告)号：US06574256B1
公开(公告)日：2003-06-03
申请号：US09487409
申请日：2000-01-18
申请人： Daniel Hofstetter , Thomas L. Paoli , Linda T. Romano , Decai Sun , David P. Bour , Michael A. Kneissl , Chris G. Van de Walle , Noble M. Johnson
发明人： Daniel Hofstetter , Thomas L. Paoli , Linda T. Romano , Decai Sun , David P. Bour , Michael A. Kneissl , Chris G. Van de Walle , Noble M. Johnson
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/1228 , H01S5/2009 , H01S5/34333 , H01S2304/12
摘要： A distributed feedback structure includes a substrate material. An active layer has an alloy including at least one of aluminum, gallium, indium, and nitrogen. A first cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a first side of the active layer. A second cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a second side of the active layer. Periodic variations of refractive indices in at least one of the first and second claddings provide a distributed optical feedback.
摘要翻译： 分布式反馈结构包括基板材料。 有源层具有包括铝，镓，铟和氮中的至少一种的合金。 具有包括铝，镓，铟和氮中的至少一种的合金的第一包层位于有源层的第一侧上。 具有包括铝，镓，铟和氮中的至少一种的合金的第二覆层位于有源层的第二侧上。 在第一和第二包层中的至少一个中的折射率的周期性变化提供分布式光学反馈。
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3.发明授权公开(公告)号：US06597717B1
公开(公告)日：2003-07-22
申请号：US09443172
申请日：1999-11-19
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/2214 , H01S5/222 , H01S5/2227 , H01S5/2231 , H01S5/34333
摘要： An inner stripe laser diode structure for GaN laser diodes is disclosed. Inner stripe laser diode structures provide a convenient means of achieving low threshold, single mode laser diodes. The structure of an inner stripe laser diode is modified to produce lateral index guiding.
摘要翻译： 公开了一种用于GaN激光二极管的内条激光二极管结构。 内部条纹激光二极管结构提供了实现低阈值单模激光二极管的便利手段。 修改内部条纹激光二极管的结构以产生横向折射率引导。
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4.发明授权Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities 失效在蓝宝石衬底上形成具有降低的位错密度的III-V族氮化物膜
公开(公告)号：US6064078A
公开(公告)日：2000-05-16
申请号：US83137
申请日：1998-05-22
IPC分类号： H01L21/20 , H01L21/203 , H01L21/205 , H01L33/00
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02491 , H01L21/02499 , H01L21/02502 , H01L21/0254
摘要： A single layer of atoms of a selected valence is deposited between a substrate and a group III-V nitride film to improve the quality of the nitride film and of subsequently deposited nitride films on the substrate. The interlayer provides local charge neutrality at the interface, thereby promoting two-dimensional growth of the nitride film and reduced dislocation densities. When the substrate is sapphire, the interlayer should include atoms of group II elements and possibly group III elements. The structure can include a group III-V nitride buffer layer on the interlayer to further enhance the quality of the group III-V nitride films. The structures can be used in blue light emitting optoelectronic devices.
摘要翻译： 选择的价态的单层原子沉积在衬底和III-V族氮化物膜之间以提高氮化物膜的质量和随后在衬底上沉积的氮化物膜的质量。 中间层在界面处提供局部电荷中性，从而促进氮化膜的二维生长和降低的位错密度。 当衬底是蓝宝石时，中间层应包括II族元素的原子和可能的III族元素。 该结构可以包括中间层上的III-V族氮化物缓冲层，以进一步提高III-V族氮化物膜的质量。 该结构可用于蓝光发光光电器件。
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5.发明授权公开(公告)号：US07951693B2
公开(公告)日：2011-05-31
申请号：US11615808
申请日：2006-12-22
IPC分类号： H01L21/20
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.
摘要翻译： 在III族氮化物发光器件中，包括发光层的器件层在设计成减小器件中特别是在发光层中的应变的模板上生长。 降低发光器件中的应变可以提高器件的性能。 模板可以在常规生长模板可获得的晶格常数的范围内扩展发光层中的晶格常数。 应变定义如下：给定层具有对应于与该层相同组成的自由材料的晶格常数的块状晶格常数吸收和对应于该层的晶格常数的面内晶格常数ain-平面 如在结构中生长。 一层中的应变量为|（ain-plane-abulk）| / abulk。 在一些实施方案中，发光层中的应变小于1％。
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6.发明授权公开(公告)号：US07547908B2
公开(公告)日：2009-06-16
申请号：US11615834
申请日：2006-12-22
IPC分类号： H01L29/06
CPC分类号： H01L33/007 , H01L31/184
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.
摘要翻译： 在III族氮化物发光器件中，包括发光层的器件层在设计成减小器件中特别是在发光层中的应变的模板上生长。 降低发光器件中的应变可以提高器件的性能。 模板可以在常规生长模板可获得的晶格常数的范围内扩展发光层中的晶格常数。 应变定义如下：给定层具有对应于与该层相同组成的自由材料的晶格常数的块状晶格常数吸收和对应于该层的晶格常数的面内晶格常数ain-平面 如在结构中生长。 一层中的应变量为|（ain-plane-abulk）| / abulk。 在一些实施方案中，发光层中的应变小于1％。
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公开(公告)号：US20080153192A1
公开(公告)日：2008-06-26
申请号：US11615808
申请日：2006-12-22
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.
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公开(公告)号：US20080153191A1
公开(公告)日：2008-06-26
申请号：US11615826
申请日：2006-12-22
IPC分类号： H01L21/20
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/0079 , H01L33/12 , H01L33/16 , H01L33/32
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.
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9.发明申请公开(公告)号：US20080149961A1
公开(公告)日：2008-06-26
申请号：US11615834
申请日：2006-12-22
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L31/184
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.
摘要翻译： 在III族氮化物发光器件中，包括发光层的器件层在设计成减小器件中特别是在发光层中的应变的模板上生长。 降低发光器件中的应变可以提高器件的性能。 模板可以在常规生长模板可获得的晶格常数的范围内扩展发光层中的晶格常数。 应变定义如下：给定层具有对应于与该层相同组成的自由材料的晶格常数和体内晶格常数a的体晶格常数a 对应于在该结构中生长的该层的晶格常数。 一层中的应变量是|（一个平面内的）本体体积。 在一些实施方案中，发光层中的应变小于1％。
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公开(公告)号：US07534638B2
公开(公告)日：2009-05-19
申请号：US11615826
申请日：2006-12-22
IPC分类号： H01L21/205
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/0079 , H01L33/12 , H01L33/16 , H01L33/32
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.
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