公开(公告)号：US4996082A

公开(公告)日：1991-02-26

申请号：US350571

申请日：1989-05-11

申请人： Henry Guckel ,  David W. Burns

发明人： Henry Guckel ,  David W. Burns

IPC分类号： G01L9/00

CPC分类号： G01L9/0042

摘要： Sealed cavity structures suitable for use as pressure transducers are formed on a single surface of a semiconductor substrate (20) by, for example, deposit of a polycrystalline silicon layer (32) from silane gas over a relatively large silicon dioxide post (22) and smaller silicon dioxide ridges (27) leading outwardly from the post. The polysilicon layer is masked and etched to expose the outer edges of the ridges and the entire structure is then immersed in an etchant which etches the silicon dioxide forming the ridges and the post but not the substrate (20) of the deposited polysilicon layer (32). A cavity structure results in which channels (35) are left in place of the ridges and extend from communication with the atmosphere to the cavity (36) left in place of the post. The cavity (36) may be sealed off from the external atmosphere by a second vapor deposition of polysilicon or silicon nitride, which fills up and seals off the channels (35), or by exposing the substrate and the structure thereon to an oxidizing ambient which results in growth of silicon dioxide in the channels sufficient to seal off the channels. Deflection of the membrane spanning the cavity occurring as a result of pressure changes, may be detected, for example, by piezoresistive devices formed on the membrane.

摘要翻译： 通过例如在较大的二氧化硅柱（22）上沉积硅烷气体的多晶硅层（32），在半导体衬底（20）的单个表面上形成适合用作压力传感器的密封空腔结构，以及 较小的二氧化硅脊（27）从柱向外导出。 掩模和蚀刻多晶硅层以暴露脊的外边缘，然后将整个结构浸入蚀刻剂中，该蚀刻剂蚀刻形成脊和柱的二氧化硅而不是沉积的多晶硅层（32）的衬底（20） ）。 空腔结构导致通道（35）被置于脊之外并且与大气连通延伸到离开柱的空腔（36）。 空腔（36）可以通过第二次多晶硅或氮化硅气相沉积从外部空气中密封，多晶硅或氮化硅填充并密封通道（35），或通过将衬底及其结构暴露于氧化环境 导致通道中二氧化硅的生长足以密封通道。 可以例如通过形成在膜上的压阻器件来检测跨越由于压力变化而发生的空腔的膜的偏转。

公开(公告)号：US4744863A

公开(公告)日：1988-05-17

申请号：US855806

申请日：1986-04-24

申请人： Henry Guckel ,  David W. Burns

发明人： Henry Guckel ,  David W. Burns

IPC分类号： G01L9/00 ,  H01L21/306 ,  B05D7/22 ,  H01L29/84 ,  H01L41/08

CPC分类号： G01L9/0042 ,  Y10T29/49103

摘要： Sealed cavity structures suitable for use as pressure transducers are formed on a single surface of a semiconductor substrate (20) by, for example, deposit of a polycrystalline silicon layer (32) from silane gas over a relatively large silicon dioxide post (22) and smaller silicon dioxide ridges (27) leading outwardly from the post. The polysilicon layer is masked and etched to expose the outer edges of the ridges and the entire structure is then immersed in an etchant which etches the silicon dioxide forming the ridges and the post but not the substrate (20) or the deposited polysilicon layer (32). A cavity structure results in which channels (35) are left in place of the ridges and extend from communication with the atmosphere to the cavity (36) left in place of the post. The cavity (36) may be sealed off from the external atmosphere by a second vapor deposition of polysilicon or silicon nitride, which fills up and seals off the channels (35), or by exposing the substrate and the structure thereon to an oxidizing ambient which results in growth of silicon dioxide in the channels sufficient to seal off the channels. Deflection of the membrane spanning the cavity occurring as a result of pressure changes, may be detected, for example, by piezoresistive devices formed on the membrane.

摘要翻译： 通过例如在较大的二氧化硅柱（22）上沉积硅烷气体的多晶硅层（32），在半导体衬底（20）的单个表面上形成适合用作压力传感器的密封空腔结构，以及 较小的二氧化硅脊（27）从柱向外导出。 掩模和蚀刻多晶硅层以暴露脊的外边缘，然后将整个结构浸入蚀刻剂中，该蚀刻剂蚀刻形成脊和柱而不是衬底（20）或沉积的多晶硅层（32）的二氧化硅 ）。 空腔结构导致通道（35）被置于脊之外并且与大气连通延伸到离开柱的空腔（36）。 空腔（36）可以通过第二次多晶硅或氮化硅气相沉积从外部空气中密封，多晶硅或氮化硅填充并密封通道（35），或通过将衬底及其结构暴露于氧化环境 导致通道中二氧化硅的生长足以密封通道。 可以例如通过形成在膜上的压阻器件来检测跨越由于压力变化而发生的空腔的膜的偏转。

公开(公告)号：US4853669A

公开(公告)日：1989-08-01

申请号：US174821

申请日：1988-03-29

申请人： Henry Guckel ,  David W. Burns

发明人： Henry Guckel ,  David W. Burns

IPC分类号： G01L9/00

CPC分类号： B81C1/00333 ,  G01L9/0042 ,  B81C2203/0145

摘要： Sealed cavity structures suitable for use as pressure transducers are formed on a single surface of a semiconductor substrate (20) by, for example, deposit of a polycrystalline silicon layer (32) from silane gas over a relatively large silicon dioxide post (22) and smaller silicon dioxide ridges (27) leading outwardly from the post. The polysilicon layer is masked and etched to expose the outer edges of the ridges and the entire structure is then immersed in an etchant which etches the silicon dioxide forming the ridges and the post but not the substrate (20) or the deposited polysilicon layer (32). A cavity structure results in which channels (35) are left in place of the ridges and extend from communication with the atmosphere to the cavity (36) left in place of the post. The cavity (36) may be sealed off from the external atmosphere by a second vapor deposition of polysilicon or silicon nitride, which fills up and seals off the channels (35), or by exposing the substrate and the structure thereon to an oxidizing ambient which results in growth of silicon dioxide in the channels sufficient to seal off the channels. Deflection of the membrane spanning the cavity occurring as a result of pressure changes, may be detected, for example, by piezoresistive devices formed on the membrane.

摘要翻译： 通过例如在较大的二氧化硅柱（22）上沉积硅烷气体的多晶硅层（32），在半导体衬底（20）的单个表面上形成适合用作压力传感器的密封空腔结构，以及 较小的二氧化硅脊（27）从柱向外导出。 掩模和蚀刻多晶硅层以暴露脊的外边缘，然后将整个结构浸入蚀刻剂中，该蚀刻剂蚀刻形成脊和柱而不是衬底（20）或沉积的多晶硅层（32）的二氧化硅 ）。 空腔结构导致通道（35）被置于脊之外并且与大气连通延伸到离开柱的空腔（36）。 空腔（36）可以通过第二次多晶硅或氮化硅气相沉积从外部空气中密封，多晶硅或氮化硅填充并密封通道（35），或通过将衬底及其结构暴露于氧化环境 导致通道中二氧化硅的生长足以密封通道。 可以例如通过形成在膜上的压阻器件来检测跨越由于压力变化而发生的空腔的膜的偏转。

公开(公告)号：US5559358A

公开(公告)日：1996-09-24

申请号：US247911

申请日：1994-05-23

申请人： David W. Burns ,  Henry Guckel ,  James D. Zook

发明人： David W. Burns ,  Henry Guckel ,  James D. Zook

IPC分类号： G01D21/00 ,  G01J1/02 ,  G01J5/44 ,  G01K7/32 ,  G01K11/26 ,  G01L9/00 ,  G01P15/093 ,  G01P15/097 ,  G01P15/10 ,  G02B26/00 ,  G02B26/08 ,  H01L31/00 ,  H01L31/10 ,  H01L29/82

CPC分类号： H01L31/00 ,  G01J5/44 ,  G01L9/002 ,  G01P15/093 ,  G01P15/097 ,  G02B26/001 ,  G02B26/0833 ,  G01P2015/0828

摘要： The present invention relates to microstructures fabricated from semiconductor material and having a flexible member which is excited into various modes of resonance and in which such resonance is read optically. By coupling the microstructure to a surface or material of interest, a drive means will excite the flexible member into a characteristic resonance which when read optically gives indication of certain physical phenomena influencing the surface or material of interest. The microstructures of the present invention may be configured to self-resonate, as a so-called active device, under certain conditions. Many different physical phenomena may be quantified using the device of the present invention.

摘要翻译： 本发明涉及由半导体材料制成的微结构，并且具有被激发成各种谐振模式并且其中这种共振被光学读出的柔性元件。 通过将微结构耦合到感兴趣的表面或材料，驱动装置将使柔性构件激发成特征共振，其在光学读出时指示影响感兴趣的表面或材料的某些物理现象。 本发明的微结构可以被配置为在某些条件下作为所谓的有源器件自谐振。 可以使用本发明的装置量化许多不同的物理现象。

公开(公告)号：US4897360A

公开(公告)日：1990-01-30

申请号：US131082

申请日：1987-12-09

申请人： Henry Guckel ,  David W. Burns

发明人： Henry Guckel ,  David W. Burns

IPC分类号： C30B28/14 ,  C23C16/24 ,  C30B29/06 ,  C30B33/02 ,  G01L9/00 ,  G03F1/20 ,  G03F1/22 ,  H01L21/027 ,  H01L21/20 ,  H01L21/30 ,  H01L21/322 ,  H01L21/324 ,  H01L29/84

CPC分类号： G03F1/20 ,  G01L9/0042 ,  G03F1/22 ,  H01L21/3221 ,  Y10S148/025 ,  Y10S148/097 ,  Y10S148/122 ,  Y10S438/977

摘要： Polycrystalline silicon is deposited in a film onto the surface of a substrate which has been carefully prepared to eliminate any defects or contaminants which could nucleate crystal growth on the substrate. The deposition is carried out by low pressure decomposition of silane at substantially 580.degree. C. to cause a film of fine grained crystals of polysilicon to be formed having grain sizes averaging less than about 300 Angstroms after annealing. Such a film is very uniform and smooth, having a surface roughness less than about 100 Angstroms RMS. Annealing of the film and substrate at a low temperature results in a compressive strain in the field that decreases over the annealing time, annealing at high temperatures (e.g., over 1050.degree. C.) yields substantially zero strain in the film, and annealing at intermediate temperatures (e.g., 650.degree. C. to 950.degree. C.) yields tensile strain at varying strain levels depending on the annealing temperature and time. Further processing of the polysilicon films and the substrate can yield isolated diaphragms of the polysilicon film which are supported only at edges by the substrate and which have substantial lateral dimensions, e.g., 1 cm by 1 cm. Such that structures can be used as pressure sensor diaphragms, X-ray masks, and optical filters, and can be provided with holes of varying sizes, shape and number, which can serve as X-ray mask patterns. The diaphragms can be provided with numerous holes of uniform size and spacing which allows the diaphragms to be used as filters in ultrafiltration applications.

摘要翻译： 将多晶硅沉积在已经经过仔细准备以消除可能使基底上晶体生长成核的任何缺陷或污染物的基底表面上。 沉积通过在大约580℃下低分子量的硅烷进行，以形成晶粒尺寸平均小于约300埃的多晶硅晶粒。 这种膜非常均匀和光滑，具有小于约100埃的表面粗糙度。 在低温下对膜和基材进行退火导致在退火时间内减小的场中的压缩应变，在高温下退火（例如，超过1050℃）在膜中产生基本上零应变，并在中间退火 温度（例如650℃至950℃）根据退火温度和时间在变化的应变水平下产生拉伸应变。 多晶硅膜和衬底的进一步处理可以产生多晶硅膜的隔离膜，其仅由衬底在边缘被支撑，并且具有大的横向尺寸，例如1cm×1cm。 这样的结构可以用作压力传感器膜片，X射线掩模和滤光器，并且可以设置有可以用作X射线掩模图案的不同尺寸，形状和数量的孔。 隔膜可以设置有许多均匀尺寸和间隔的孔，这允许隔膜在超滤应用中用作过滤器。

公开(公告)号：US6133615A

公开(公告)日：2000-10-17

申请号：US59141

申请日：1998-04-13

申请人： Henry Guckel ,  Shamus P. McNamara

发明人： Henry Guckel ,  Shamus P. McNamara

IPC分类号： H01L27/146 ,  H01L31/068

CPC分类号： H01L27/14643 ,  H01L27/14601

摘要： Photodiode arrays are formed with close diode-to-diode spacing and minimized cross-talk between diodes in the array by isolating the diodes from one another with trenches that are formed between the photodiodes in the array. The photodiodes are formed of spaced regions in a base layer, each spaced region having an impurity type opposite to that of the base layer to define a p-n junction between the spaced regions and the base layer. The base layer meets a substrate at a boundary, with the substrate being much more heavily doped than the base layer with the same impurity type. The trenches extend through the base layer and preferably into the substrate. Minority carriers generated by absorption of light photons in the base layer can only migrate to an adjacent photodiode through the substrate. The lifetime and the corresponding diffusion length of the minority carriers in the substrate is very short so that all minority carriers recombine in the substrate before reaching an adjacent photodiode.

摘要翻译： 光电二极管阵列通过在阵列中的光电二极管之间形成的沟槽将二极管彼此隔离来形成具有紧密的二极管至二极管间隔并且使阵列中二极管之间的串扰最小化。 光电二极管在基层中由间隔开的区域形成，每个间隔区域具有与基层相反的杂质类型，以限定间隔区域和基层之间的p-n结。 基底层在边界处与基底相交，其中衬底比具有相同杂质类型的基底层重掺杂得多。 沟槽延伸通过基底层并且优选地延伸到基底中。 通过在基层中吸收光子而产生的少数载体只能通过基底迁移到相邻的光电二极管。 衬底中少数载流子的寿命和相应的扩散长度非常短，使得所有少数载流子在到达相邻光电二极管之前在衬底中重新结合。

公开(公告)号：US5808384A

公开(公告)日：1998-09-15

申请号：US869789

申请日：1997-06-05

申请人： Ned Tabat ,  Henry Guckel

发明人： Ned Tabat ,  Henry Guckel

IPC分类号： H02K33/00 ,  H02K15/00 ,  H02K57/00

CPC分类号： H02K33/00 ,  Y10S310/06

摘要： Micromechanical actuators capable of bidirectional and bistable operation can be formed on substrates using lithographic processing techniques. Bistable operation of the microactuator is obtained using a single coil and a magnetic core with a gap. A plunger having two magnetic heads is supported for back and forth linear movement with respect to the gap in the magnetic core, and is spring biased to a neutral position in which the two heads are on each side of the gap in the core. The single electrical coil is coupled to the core and is provided with electrical current to attract one of the heads toward the core by reluctance action to drive the plunger to a limit of travel in one direction. The current is then cut off and the plunger returns by spring action toward the gap, whereafter the current is reapplied to the coil to attract the other head of the plunger by reluctance action to drive the plunger to its other limit of travel. This process can be repeated at a time when switching of the actuator is required.

摘要翻译： 可以使用光刻处理技术在基板上形成能够双向和双向运行的微机械致动器。 使用单个线圈和具有间隙的磁芯获得微致动器的双稳态操作。 具有两个磁头的柱塞被支撑用于相对于磁芯中的间隙的往复线性运动，并且被弹簧偏置到中间位置，在该中间位置，两个磁头位于磁芯的间隙的每一侧上。 单个电线圈耦合到铁芯并且被提供有电流以通过磁阻作用来吸引其中一个磁头朝向磁芯，以将柱塞驱动到在一个方向上行进的极限。 然后将电流切断，并且柱塞通过弹簧作用向间隙返回，然后电流重新施加到线圈以通过磁阻作用吸引柱塞的另一个头部，以将柱塞驱动到其另一个行进限制。 在需要切换致动器时，可以重复该过程。

公开(公告)号：US5644177A

公开(公告)日：1997-07-01

申请号：US393432

申请日：1995-02-23

申请人： Henry Guckel ,  Jonathan L. Klein ,  Thomas L. Earles

发明人： Henry Guckel ,  Jonathan L. Klein ,  Thomas L. Earles

IPC分类号： F04B17/04 ,  F04B19/00 ,  H01H50/00 ,  H02K33/10 ,  H02K41/035 ,  H02K15/00 ,  H02K57/00

CPC分类号： F04B17/042 ,  F04B19/006 ,  H01H50/005 ,  H02K33/10 ,  H02K41/0352 ,  H02K99/00 ,  H01H2001/0078 ,  Y10S310/06

摘要： Micromechanical structures capable of actuation for purposes such as fluid flow control are formed on substrates in sizes in the range of one or two millimeters or less using micromechanical processing techniques. A magnetic core having a gap therein is fixed on the substrate, and a plunger is mounted by a spring for movement parallel to the substrate in response to the flux provided to the gap of the fixed core. An electrical coil wound around a mandrel is engaged to the fixed magnetic core such that flux is induced in the core when current is supplied to the coil, driving the plunger against the force of the spring. A micromechanical fluid control unit includes a metal frame structure formed by electrodeposition on a substrate with the inner wall of the frame having slots formed therein to admit a separator wall which divides the interior of the frame into separate chambers, with a cover secured over the top of the frame and the separator wall to seal the chambers. A plunger actuator can be mounted within the frame with fixed core sections extending through the walls of the frame, and with the mandrel and coil engaged to the fixed core sections outside of the frame to provide magnetic flux to a gap to actuate the plunger within the sealed enclosure.

摘要翻译： 使用微机械处理技术，能够致动用于例如流体流动控制的微机械结构在尺寸在一个或两个毫米或更小的范围内的基板上形成。 其中具有间隙的磁芯固定在基板上，并且响应于提供给固定芯的间隙的通量，通过弹簧安装柱塞以平行于基板移动。 缠绕在心轴上的电线圈与固定磁芯接合，使得当电流供应到线圈时，磁芯中引起磁通，抵抗弹簧的力驱动柱塞。 微机械流体控制单元包括通过电沉积在基底上而形成的金属框架结构，其中框架的内壁具有形成在其中的槽，以允许将框架内部分成分离的室的分隔壁，其顶盖固定在顶部 的框架和分离器壁以密封室。 柱塞致动器可以安装在框架内，固定的芯部分延伸穿过框架的壁，并且心轴和线圈与框架外部的固定芯部分接合，以向间隙提供磁通量，从而致动柱塞 密封外壳。

公开(公告)号：US5576147A

公开(公告)日：1996-11-19

申请号：US461983

申请日：1995-06-05

申请人： Henry Guckel ,  Todd R. Christenson ,  Kenneth Skrobis

发明人： Henry Guckel ,  Todd R. Christenson ,  Kenneth Skrobis

IPC分类号： G03F7/027 ,  B81B1/00 ,  B81C1/00 ,  G03F7/00 ,  G03F7/20 ,  G03F7/26 ,  G03F7/30 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027 ,  H05K3/18

CPC分类号： G03F7/38 ,  B81C1/0038 ,  G03F7/00 ,  G03F7/0035 ,  B81C2201/0128 ,  B81C2201/0159 ,  B81C2201/019 ,  B81C2201/032 ,  Y10S430/168 ,  Y10T428/31504

摘要： In the formation of microstructures, a preformed sheet of photoresist, such as polymethylmethacrylate (PMMA), which is strain free, may be milled down before or after adherence to a substrate to a desired thickness. The photoresist is patterned by exposure through a mask to radiation, such as X-rays, and developed using a developer to remove the photoresist material which has been rendered susceptible to the developer. Micrometal structures may be formed by electroplating metal into the areas from which the photoresist has been removed. The photoresist itself may form useful microstructures, and can be removed from the substrate by utilizing a release layer between the substrate and the preformed sheet which can be removed by a remover which does not affect the photoresist. Multiple layers of patterned photoresist can be built up to allow complex three dimensional microstructures to be formed.

公开(公告)号：US5189777A

公开(公告)日：1993-03-02

申请号：US626581

申请日：1990-12-07

申请人： Henry Guckel ,  Todd R. Christenson

发明人： Henry Guckel ,  Todd R. Christenson

IPC分类号： G01L13/06 ,  B81B3/00 ,  G01L9/00 ,  G01L19/00 ,  H01L29/84 ,  H04R19/00

CPC分类号： G01L9/0042 ,  G01L19/0618 ,  G01L9/0055 ,  G01L9/0073 ,  H04R19/005 ,  Y10S430/168 ,  Y10T29/49103 ,  Y10T29/49812

摘要： Microminiature pressure transducers are formed on semiconductor substrates such as silicon and include a membrane which spans a cavity over the substrate, with the membrane being mounted to and sealed to the substrate at the peripheral edges of the membrane. The bottom of the cavity forms an overpressure stop to prevent over deflections of the membrane toward the substrate. An overpressure stop formed as a bridge of a material such as nickel extends above the membrane and is spaced therefrom to allow the membrane to deflect freely under normal pressure situations but prevent over deflections. The thickness of the polysilicon membrane and the spacing between the membrane and the overpressure stops is preferably in the range of 10 micrometers or less, and typically in the range of one micrometer. The overpressure stop bridge is formed utilizing deep X-ray lithography to form a well-defined bridge structure. The gap between the membrane and the bottom surface of the bridge is established with a sacrificial layer, such as a polyimide film, which dissolves in a solvent. The transducer is formed utilizing processing techniques which do not affect the performance of the membrane as a pressure sensor and which allow the substrate to have further micromechanical or microelectronic devices formed thereon.