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    Methods of forming capacitor structures including L-shaped cavities and related structures
    1.
    发明申请
    Methods of forming capacitor structures including L-shaped cavities and related structures 有权
    形成电容器结构的方法包括L形腔和相关结构

    公开(公告)号：US20050112819A1

    公开(公告)日：2005-05-26

    申请号：US10977385

    申请日：2004-10-29

    申请人： Dong-Chan Kim ,  Chang-Jin Kang ,  Byeong-Yun Nam ,  Kyeong-Koo Ghi ,  Eun-Ae Chung ,  Sung-II Cho

    发明人： Dong-Chan Kim ,  Chang-Jin Kang ,  Byeong-Yun Nam ,  Kyeong-Koo Ghi ,  Eun-Ae Chung ,  Sung-II Cho

    IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01L27/108

    CPC分类号： H01L27/10852 ,  H01L27/10817 ,  H01L28/91

    摘要： Methods of forming capacitor structures may include forming an insulating layer on a substrate, forming a first capacitor electrode on the insulating layer, forming a capacitor dielectric layer on portions of the first capacitor electrode, and forming a second capacitor electrode on the capacitor dielectric layer such that the capacitor dielectric layer is between the first and second capacitor electrodes. More particularly, the first capacitor electrode may define a cavity therein wherein the cavity has a first portion parallel with respect to the substrate and a second portion perpendicular with respect to the substrate. Related structures are also discussed.

    摘要翻译： 形成电容器结构的方法可以包括在衬底上形成绝缘层，在绝缘层上形成第一电容器电极，在第一电容器电极的部分上形成电容器电介质层，以及在电容器电介质层上形成第二电容器电极， 电容器介电层位于第一和第二电容器电极之间。 更具体地，第一电容器电极可以在其中限定空腔，其中腔具有相对于衬底平行的第一部分和相对于衬底垂直的第二部分。 还讨论了相关结构。

    Methods of forming capacitor structures including L-shaped cavities
    2.
    发明授权
    Methods of forming capacitor structures including L-shaped cavities 有权
    形成电容器结构的方法包括L形腔

    公开(公告)号：US07312130B2

    公开(公告)日：2007-12-25

    申请号：US10977385

    申请日：2004-10-29

    申请人： Dong-Chan Kim ,  Chang-Jin Kang ,  Byeong-Yun Nam ,  Kyeong-Koo Ghi ,  Eun-Ae Chung ,  Sung-Il Cho

    发明人： Dong-Chan Kim ,  Chang-Jin Kang ,  Byeong-Yun Nam ,  Kyeong-Koo Ghi ,  Eun-Ae Chung ,  Sung-Il Cho

    IPC分类号： H01L21/20

    CPC分类号： H01L27/10852 ,  H01L27/10817 ,  H01L28/91

    摘要： Methods of forming capacitor structures may include forming an insulating layer on a substrate, forming a first capacitor electrode on the insulating layer, forming a capacitor dielectric layer on portions of the first capacitor electrode, and forming a second capacitor electrode on the capacitor dielectric layer such that the capacitor dielectric layer is between the first and second capacitor electrodes. More particularly, the first capacitor electrode may define a cavity therein wherein the cavity has a first portion parallel with respect to the substrate and a second portion perpendicular with respect to the substrate. Related structures are also discussed.

    摘要翻译： 形成电容器结构的方法可以包括在衬底上形成绝缘层，在绝缘层上形成第一电容器电极，在第一电容器电极的部分上形成电容器电介质层，以及在电容器电介质层上形成第二电容器电极， 电容器介电层位于第一和第二电容器电极之间。 更具体地，第一电容器电极可以在其中限定空腔，其中腔具有相对于衬底平行的第一部分和相对于衬底垂直的第二部分。 还讨论了相关结构。

    Methods of manufacturing semiconductor devices having a recessed-channel
    4.
    发明授权
    Methods of manufacturing semiconductor devices having a recessed-channel 有权
    制造具有凹槽的半导体器件的方法

    公开(公告)号：US08119486B2

    公开(公告)日：2012-02-21

    申请号：US12984176

    申请日：2011-01-04

    申请人： Young-Pil Kim ,  Eun-Ae Chung ,  Gab-Jin Nam ,  Hee-Don Hwang ,  Ji-Young Min

    发明人： Young-Pil Kim ,  Eun-Ae Chung ,  Gab-Jin Nam ,  Hee-Don Hwang ,  Ji-Young Min

    IPC分类号： H01L21/336

    CPC分类号： H01L27/10876 ,  H01L29/66628

    摘要： A method according to example embodiments includes forming isolation regions in a substrate, the isolation regions defining active regions. Desired regions of the active regions and the isolation regions are removed, thereby forming recess channel trenches to a desired depth. The recess channel trenches are fog to have a first region in contact with the active regions and a second region in contact with the isolation regions. A width of a bottom surface of the recess channel trenches is less than that of a top surface thereof. The active regions and the isolation regions are annealed to uplift the bottom surface of the recess channel trenches. An area of the bottom surface of the first region is increased. A depth of the bottom surface of the first region is reduced.

    摘要翻译： 根据示例实施例的方法包括在衬底中形成隔离区域，所述隔离区限定活性区域。 去除有源区域和隔离区域的期望区域，从而形成凹槽沟槽到期望的深度。 凹槽沟槽是雾化的，以具有与活性区域接触的第一区域和与隔离区域接触的第二区域。 凹槽沟槽的底面的宽度小于其顶面的宽度。 有源区域和隔离区域被退火以提高凹槽通道沟槽的底面。 第一区域的底面的面积增加。 第一区域的底面的深度减小。

    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES HAVING A RECESSED-CHANNEL
    7.
    发明申请
    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES HAVING A RECESSED-CHANNEL 有权
    制造具有接收通道的半导体器件的方法

    公开(公告)号：US20110201168A1

    公开(公告)日：2011-08-18

    申请号：US12984176

    申请日：2011-01-04

    申请人： Young-Pil Kim ,  Eun-Ae Chung ,  Gab-Jin Nam ,  Hee-Don Hwang ,  Ji-Young Min

    发明人： Young-Pil Kim ,  Eun-Ae Chung ,  Gab-Jin Nam ,  Hee-Don Hwang ,  Ji-Young Min

    IPC分类号： H01L21/336

    CPC分类号： H01L27/10876 ,  H01L29/66628

    摘要： A method according to example embodiments includes forming isolation regions in a substrate, the isolation regions defining active regions. Desired regions of the active regions and the isolation regions are removed, thereby forming recess channel trenches to a desired depth. The recess channel trenches are fog to have a first region in contact with the active regions and a second region in contact with the isolation regions. A width of a bottom surface of the recess channel trenches is less than that of a top surface thereof. The active regions and the isolation regions are annealed to uplift the bottom surface of the recess channel trenches. An area of the bottom surface of the first region is increased. A depth of the bottom surface of the first region is reduced.

    摘要翻译： 根据示例实施例的方法包括在衬底中形成隔离区域，所述隔离区限定活性区域。 去除有源区域和隔离区域的期望区域，从而形成凹槽沟槽到期望的深度。 凹槽沟槽是雾化的，以具有与活性区域接触的第一区域和与隔离区域接触的第二区域。 凹槽沟槽的底面的宽度小于其顶面的宽度。 有源区域和隔离区域被退火以提高凹槽通道沟槽的底面。 第一区域的底面的面积增加。 第一区域的底面的深度减小。