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公开(公告)号：US10312215B2
公开(公告)日：2019-06-04
申请号：US15445549
申请日：2017-02-28
发明人： Yong Hee Kim , Sang Don Jung
IPC分类号： H01L23/48 , H01L23/00 , H01L21/263 , H01L21/768 , A61B5/00 , A61N1/05 , A61N1/04
摘要： Provided is an electrode assembly which may be manufactured by providing a first substrate and a second substrate, plasma treating the first substrate, forming an electrode on the first substrate, and thermally compressing the first substrate and the second substrate, with the electrode therebetween, wherein each of the first substrate and the second substrate includes a fluorine-based polymer.
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公开(公告)号：US09173281B2
公开(公告)日：2015-10-27
申请号：US13944715
申请日：2013-07-17
发明人： Yong Hee Kim , Sang Don Jung , Nam Seob Baek , Gookhwa Kim
CPC分类号： H05K1/02 , H05K3/10 , H05K3/4007 , H05K2201/0257 , H05K2201/099
摘要： Provide are an electrode sensor and a method of fabricating the same. the method may include providing a substrate with a first electrode, forming a resist layer on the substrate to cover the first electrode, patterning the resist layer to expose a portion of the first electrode, forming an insulating layer on the substrate, removing the insulating layer on the resist layer and the resist layer to form a well in the insulating layer, and forming a second electrode in the well to be electrically connected to the first electrode. According to the method, it is possible to prevent the first electrode from being damaged. In addition, the second electrode may be configured have an increased surface area, and thus, the electrode can have low impedance.
摘要翻译： 提供电极传感器及其制造方法。 该方法可以包括提供具有第一电极的衬底，在衬底上形成抗蚀剂层以覆盖第一电极，图案化抗蚀剂层以暴露第一电极的一部分，在衬底上形成绝缘层，去除绝缘层 在所述抗蚀剂层和所述抗蚀剂层上，在所述绝缘层中形成阱，以及在所述阱中形成电连接到所述第一电极的第二电极。 根据该方法，可以防止第一电极被损坏。 此外，第二电极可以被配置为具有增加的表面积，因此电极可以具有低阻抗。
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公开(公告)号：US11278713B2
公开(公告)日：2022-03-22
申请号：US16000763
申请日：2018-06-05
发明人： Yong Hee Kim , Sang Don Jung
摘要： Disclosed are a neural electrode and a method of manufacturing the electrode, more particularly, a neural electrode includes a porous nanostructure; and an iridium oxide layer formed on the porous nanostructure and a method of manufacturing the neural electrode, improving an electrode efficiency by increasing a charge injection limit capacity and the like.
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公开(公告)号：US11013442B2
公开(公告)日：2021-05-25
申请号：US15065755
申请日：2016-03-09
发明人： Yong Hee Kim , Sang-Don Jung , Gook Hwa Kim , Ah Young Kim
摘要： Disclosed are a neural electrode for measuring a neural signal and a method for manufacturing the same. In the method, an indium tin oxide (ITO) electrode is formed on a substrate, an insulative passivation layer is formed on the substrate and the ITO electrode to expose a portion of the ITO electrode, and ITO nanorods are formed on the portion of the ITO electrode and the insulative passivation layer. Accordingly, it is possible to reduce electrical noise and improve a neurotrophic property by using the existing process.
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公开(公告)号：US10978376B2
公开(公告)日：2021-04-13
申请号：US16700955
申请日：2019-12-02
发明人： Yong Hee Kim , Sang-Don Jung
摘要： Provided is a sensing device and a method for fabricating the same. The sensing device includes a first sensor including a first substrate, first electrodes, and a first passivation layer and a second sensor disposed on the first sensor and including a second substrate, second electrodes, and a second passivation layer. The second sensor is connected to the first sensor through a chemical bonding.
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公开(公告)号：US10582865B2
公开(公告)日：2020-03-10
申请号：US16116810
申请日：2018-08-29
发明人： Yong Hee Kim , Sang Don Jung
摘要： Provided are a neural electrode for measuring a neural signal, and a method for manufacturing the same. The method for manufacturing the same includes forming an ITO electrode on a substrate, forming a passivation layer for exposing a portion of the ITO electrode, forming ITO nanowires on the ITO electrode, and forming a metal oxide on the ITO nanowires.
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公开(公告)号：US09650720B2
公开(公告)日：2017-05-16
申请号：US15056948
申请日：2016-02-29
发明人： Yong Hee Kim , Sang-Don Jung
IPC分类号： C23F1/44 , C25D5/48 , C25D5/10 , C25D3/46 , C23F1/30 , C25D7/00 , A61B5/04 , C23F1/14 , C25D3/48 , B82Y5/00 , B82Y40/00
CPC分类号： C23F1/44 , A61B5/04001 , A61B2562/0215 , A61B2562/0217 , A61B2562/125 , B82Y5/00 , B82Y40/00 , C23F1/02 , C23F1/14 , C23F1/30 , C25D3/46 , C25D3/48 , C25D5/10 , C25D5/48 , C25D7/00
摘要： In a method for surface-modifying a neural electrode, a neural electrode array is formed, first and second metal nanoparticles having different solubilities with respect to an etching solution are simultaneously electrode-deposited on a surface of the neural electrode array, and the second metal nanoparticles are selectively etched using the etching solution, thereby forming a porous structure including the first metal nanoparticles on the surface of the neural electrode array.
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