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1.发明授权Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement 有权单晶III族氮化物制品及其制备方法，其通过HVPE方法并入多晶层以提高产率公开(公告)号：US08349711B2
公开(公告)日：2013-01-08
申请号：US13015303
申请日：2011-01-27
IPC分类号： H01L21/00
CPC分类号： H01L21/02694 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0257 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L29/04 , H01L29/0688 , H01L29/2003 , H01L33/007 , H01L33/30 , H01L33/32
摘要： In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.
摘要翻译： 在制造GaN制品的方法中，在单晶衬底上沉积外延氮化物层。 通过HVPE在基本上3D生长模式下在外延氮化物层上生长3D成核GaN层。 在将成长模式从基本上3D生长模式改变为基本上2D生长模式的条件下，通过HVPE在3D成核层上生长GaN过渡层。 在基本上2D生长模式下，通过HVPE在过渡层上生长体GaN层。 在体GaN层上生长多晶GaN层以形成GaN /衬底双层。 GaN /衬底双层可以从生长温度冷却到环境温度，其中GaN材料横向裂开并与衬底分离，形成独立制品。
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2.发明授权Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement 有权单晶III族氮化物制品及其制备方法，其通过HVPE方法并入多晶层以提高产率公开(公告)号：US07897490B2
公开(公告)日：2011-03-01
申请号：US11606783
申请日：2006-11-30
IPC分类号： H01L21/00
CPC分类号： H01L21/02694 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0257 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L29/04 , H01L29/0688 , H01L29/2003 , H01L33/007 , H01L33/30 , H01L33/32
摘要： In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.
摘要翻译： 在制造GaN制品的方法中，在单晶衬底上沉积外延氮化物层。 通过HVPE在基本上3D生长模式下在外延氮化物层上生长3D成核GaN层。 在将成长模式从基本上3D生长模式改变为基本上2D生长模式的条件下，通过HVPE在3D成核层上生长GaN过渡层。 在基本上2D生长模式下，通过HVPE在过渡层上生长体GaN层。 在体GaN层上生长多晶GaN层以形成GaN /衬底双层。 GaN /衬底双层可以从生长温度冷却到环境温度，其中GaN材料横向裂开并与衬底分离，形成独立制品。
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3.发明申请Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement 有权单晶III族氮化物制品及其制备方法，其通过HVPE方法并入多晶层以提高产率公开(公告)号：US20100327291A1
公开(公告)日：2010-12-30
申请号：US11606783
申请日：2006-11-30
CPC分类号： H01L21/02694 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0257 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L29/04 , H01L29/0688 , H01L29/2003 , H01L33/007 , H01L33/30 , H01L33/32
摘要： In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.
摘要翻译： 在制造GaN制品的方法中，在单晶衬底上沉积外延氮化物层。 通过HVPE在基本上3D生长模式下在外延氮化物层上生长3D成核GaN层。 在将成长模式从基本上3D生长模式改变为基本上2D生长模式的条件下，通过HVPE在3D成核层上生长GaN过渡层。 在基本上2D生长模式下，通过HVPE在过渡层上生长体GaN层。 在体GaN层上生长多晶GaN层以形成GaN /衬底双层。 GaN /衬底双层可以从生长温度冷却到环境温度，其中GaN材料横向裂开并与衬底分离，形成独立制品。
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4.发明申请SINGLE CRYSTAL GROUP III NITRIDE ARTICLES AND METHOD OF PRODUCING SAME BY HVPE METHOD INCORPORATING A POLYCRYSTALLINE LAYER FOR YIELD ENHANCEMENT 有权单晶III类氮化物文章及其通过HVPE方法生产的方法，该方法包含用于增强的多晶层公开(公告)号：US20110198590A1
公开(公告)日：2011-08-18
申请号：US13015303
申请日：2011-01-27
CPC分类号： H01L21/02694 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0257 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L29/04 , H01L29/0688 , H01L29/2003 , H01L33/007 , H01L33/30 , H01L33/32
摘要： In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.
摘要翻译： 在制造GaN制品的方法中，在单晶衬底上沉积外延氮化物层。 通过HVPE在基本上3D生长模式下在外延氮化物层上生长3D成核GaN层。 在将成长模式从基本上3D生长模式改变为基本上2D生长模式的条件下，通过HVPE在3D成核层上生长GaN过渡层。 在基本上2D生长模式下，通过HVPE在过渡层上生长体GaN层。 在体GaN层上生长多晶GaN层以形成GaN /衬底双层。 GaN /衬底双层可以从生长温度冷却到环境温度，其中GaN材料横向裂开并与衬底分离，形成独立制品。
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公开(公告)号：US08435879B2
公开(公告)日：2013-05-07
申请号：US12085857
申请日：2006-11-30
申请人： Andrew D. Hanser , Lianghong Liu , Edward A. Preble , Denis Tsvetkov , Nathaniel Mark Williams , Xueping Xu
发明人： Andrew D. Hanser , Lianghong Liu , Edward A. Preble , Denis Tsvetkov , Nathaniel Mark Williams , Xueping Xu
IPC分类号： H01L21/28
CPC分类号： H01L21/02694 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0257 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L29/04 , H01L29/0688 , H01L29/2003 , H01L33/007 , H01L33/30 , H01L33/32
摘要： Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.
摘要翻译： 用于制造光电子器件（如发光二极管（LED），激光二极管（LD））和光电检测器的III族（Al，Ga，In）N单晶，制品和膜以及电子器件（如高电子迁移率晶体管 由III-V族氮化物组成的HEMT）以及制造这种晶体，制品和薄膜的方法。
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公开(公告)号：US20100044718A1
公开(公告)日：2010-02-25
申请号：US12085857
申请日：2006-11-30
申请人： Andrew D. Hanser , Lianghong Liu , Edward A. Preble , Denis Tsvetkov , Nathaniel Mark Williams , Xueping Xu
发明人： Andrew D. Hanser , Lianghong Liu , Edward A. Preble , Denis Tsvetkov , Nathaniel Mark Williams , Xueping Xu
CPC分类号： H01L21/02694 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0257 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L29/04 , H01L29/0688 , H01L29/2003 , H01L33/007 , H01L33/30 , H01L33/32
摘要： Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.
摘要翻译： 用于制造光电子器件（如发光二极管（LED），激光二极管（LD））和光电检测器的III族（Al，Ga，In）N单晶，制品和膜以及电子器件（如高电子迁移率晶体管 由III-V族氮化物组成的HEMT）以及制造这种晶体，制品和薄膜的方法。
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7.发明申请INCLUSION-FREE UNIFORM SEMI-INSULATING GROUP III NITRIDE SUBSTRATES AND METHODS FOR MAKING SAME 有权无包层均匀半绝缘III族氮化物衬底及其制造方法公开(公告)号：US20110042682A1
公开(公告)日：2011-02-24
申请号：US12855087
申请日：2010-08-12
CPC分类号： H01L21/02694 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0257 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L29/04 , H01L29/0688 , H01L29/2003 , H01L33/007 , H01L33/30 , H01L33/32
摘要： In a method for making an inclusion-free uniformly semi-insulating GaN crystal, an epitaxial nitride layer is deposited on a substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode, wherein a surface of the nucleation layer is substantially covered with pits and the aspect ratio of the pits is essentially the same. A GaN transitional layer is grown on the nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. After growing the transitional layer, a surface of the transitional layer is substantially pit-free. A bulk GaN layer is grown on the transitional layer by HVPE. After growing the bulk layer, a surface of the bulk layer is smooth and substantially pit-free. The GaN is doped with a transition metal during at least one of the foregoing GaN growth steps.
摘要翻译： 在制造无夹杂物的均匀半绝缘GaN晶体的方法中，在衬底上沉积外延氮化物层。 3D成核GaN层通过HVPE在基本上3D生长模式下在外延氮化物层上生长，其中成核层的表面基本上被凹坑覆盖，并且凹坑的纵横比基本相同。 在将生长模式从基本上3D生长模式改变为基本上2D生长模式的条件下，通过HVPE在成核层上生长GaN过渡层。 在生长过渡层之后，过渡层的表面基本上是无凹坑的。 通过HVPE在过渡层上生长体GaN层。 在生长本体层之后，本体层的表面是光滑的并且基本上无凹坑。 在至少一个上述GaN生长步骤期间，GaN掺杂有过渡金属。
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8.发明授权Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same 有权无夹杂均匀半绝缘III族氮化物衬底及其制造方法公开(公告)号：US08202793B2
公开(公告)日：2012-06-19
申请号：US12855087
申请日：2010-08-12
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： H01L21/02694 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0257 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L29/04 , H01L29/0688 , H01L29/2003 , H01L33/007 , H01L33/30 , H01L33/32
摘要： In a method for making an inclusion-free uniformly semi-insulating GaN crystal, an epitaxial nitride layer is deposited on a substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode, wherein a surface of the nucleation layer is substantially covered with pits and the aspect ratio of the pits is essentially the same. A GaN transitional layer is grown on the nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. After growing the transitional layer, a surface of the transitional layer is substantially pit-free. A bulk GaN layer is grown on the transitional layer by HVPE. After growing the bulk layer, a surface of the bulk layer is smooth and substantially pit-free. The GaN is doped with a transition metal during at least one of the foregoing GaN growth steps.
摘要翻译： 在制造无夹杂物的均匀半绝缘GaN晶体的方法中，在衬底上沉积外延氮化物层。 3D成核GaN层通过HVPE在基本上3D生长模式下在外延氮化物层上生长，其中成核层的表面基本上被凹坑覆盖，并且凹坑的纵横比基本相同。 在将生长模式从基本上3D生长模式改变为基本上2D生长模式的条件下，通过HVPE在成核层上生长GaN过渡层。 在生长过渡层之后，过渡层的表面基本上是无凹坑的。 通过HVPE在过渡层上生长体GaN层。 在生长本体层之后，本体层的表面是光滑的并且基本上无凹坑。 在至少一个上述GaN生长步骤期间，GaN掺杂有过渡金属。
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9.发明授权Inclusion-free uniform semi-insulating group III nitride substrate and methods for making same 有权无夹杂均匀半绝缘III族氮化物衬底及其制造方法公开(公告)号：US07777217B2
公开(公告)日：2010-08-17
申请号：US11606633
申请日：2006-11-30
IPC分类号： H01L31/00
CPC分类号： H01L21/02694 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0257 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L29/04 , H01L29/0688 , H01L29/2003 , H01L33/007 , H01L33/30 , H01L33/32
摘要： In a method for making an inclusion-free uniformly semi-insulating GaN crystal, an epitaxial nitride layer is deposited on a substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode, wherein a surface of the nucleation layer is substantially covered with pits and the aspect ratio of the pits is essentially the same. A GaN transitional layer is grown on the nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. After growing the transitional layer, a surface of the transitional layer is substantially pit-free. A bulk GaN layer is grown on the transitional layer by HVPE. After growing the bulk layer, a surface of the bulk layer is smooth and substantially pit-free. The GaN is doped with a transition metal during at least one of the foregoing GaN growth steps.
摘要翻译： 在制造无夹杂物的均匀半绝缘GaN晶体的方法中，在衬底上沉积外延氮化物层。 3D成核GaN层通过HVPE在基本上3D生长模式下在外延氮化物层上生长，其中成核层的表面基本上被凹坑覆盖，并且凹坑的纵横比基本相同。 在将生长模式从基本上3D生长模式改变为基本上2D生长模式的条件下，通过HVPE在成核层上生长GaN过渡层。 在生长过渡层之后，过渡层的表面基本上是无凹坑的。 通过HVPE在过渡层上生长体GaN层。 在生长本体层之后，本体层的表面是光滑的并且基本上无凹坑。 在至少一个上述GaN生长步骤期间，GaN掺杂有过渡金属。
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10.发明申请Low defect group III nitride films useful for electronic and optoelectronic devices and methods for making the same 审中-公开用于电子和光电器件的低缺陷III族氮化物薄膜及其制造方法公开(公告)号：US20070138505A1
公开(公告)日：2007-06-21
申请号：US11606624
申请日：2006-11-30
申请人： Edward Preble , Lianghong Liu , Andrew Hanser , N. Williams , Xueping Xu
发明人： Edward Preble , Lianghong Liu , Andrew Hanser , N. Williams , Xueping Xu
CPC分类号： H01L21/02694 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0257 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L29/04 , H01L29/0688 , H01L29/2003 , H01L33/007 , H01L33/30 , H01L33/32
摘要： In a method for making a low-defect single-crystal GaN film, an epitaxial nitride layer is deposited on a substrate. A first GaN layer is grown on the epitaxial nitride layer by HVPE under a growth condition that promotes the formation of pits, wherein after growing the first GaN layer the GaN film surface morphology is rough and pitted. A second GaN layer is grown on the first GaN layer to form a GaN film on the substrate. The second GaN layer is grown by HVPE under a growth condition that promotes filling of the pits, and after growing the second GaN layer the GaN film surface morphology is essentially pit-free. A GaN film having a characteristic dimension of about 2 inches or greater, and a thickness normal ranging from approximately 10 to approximately 250 microns, includes a pit-free surface, the threading dislocation density being less than 1×108 cm−2.
摘要翻译： 在制造低缺陷单晶GaN膜的方法中，在衬底上沉积外延氮化物层。 在促进凹坑形成的生长条件下，通过HVPE在外延氮化物层上生长第一GaN层，其中在生长第一GaN层之后，GaN膜表面形貌粗糙和凹陷。 在第一GaN层上生长第二GaN层，以在衬底上形成GaN膜。 第二GaN层通过HVPE在促进凹坑填充的生长条件下生长，并且在生长第二GaN层之后，GaN膜表面形态基本上是无凹坑的。 具有约2英寸或更大的特征尺寸和约10至约250微米的厚度法线的GaN膜包括无凹坑表面，穿透位错密度小于1×10 8 cm -2。
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