公开(公告)号：US6160645A

公开(公告)日：2000-12-12

申请号：US427421

申请日：1999-10-26

申请人： Edwin Arthur Chandross ,  Venkataram Reddy Raju ,  Marcia Lea Schilling ,  Jeffrey Linn Bream

发明人： Edwin Arthur Chandross ,  Venkataram Reddy Raju ,  Marcia Lea Schilling ,  Jeffrey Linn Bream

IPC分类号： G11B7/0065 ,  B32B17/10 ,  G03H1/02 ,  B32B17/00 ,  G03H1/00 ,  G03H1/04

CPC分类号： G03H1/0252 ,  B32B17/10036 ,  G03H1/02 ,  G03H1/181 ,  G03H1/182 ,  G03H2001/0482 ,  G03H2001/0497 ,  G03H2250/37 ,  G03H2260/12 ,  G03H2270/22

摘要： A holographic medium uses a photosensitive polymer medium. The shelf life of the photosensitive polymer medium is improved by hermetically sealing the polymer between glass plates. The hermetic seal is designed so that high T.sub.g materials, or solder, can be used as the sealant without damage to the polymer already contained between the plates. The hermetic seal comprises metal foils attached to the plates with the edges thereof extending away from the plates in tab-like fashion. The foils are attached prior to filling the assembly with polymer. After filling, the outer edges of the foil tabs are the sealed with local heating away from the site of the polymer, or crimped using mechanical crimping.

摘要翻译： 全息介质使用光敏聚合物介质。 通过在玻璃板之间密封聚合物来改善光敏聚合物介质的保质期。 气密密封设计成使得高Tg材料或焊料可以用作密封剂而不损坏已经包含在板之间的聚合物。 气密密封件包括附着在板上的金属箔，其边缘以片状方式从板延伸。 在用聚合物填充组件之前将箔连接。 填充后，箔片的外边缘是密封的，局部加热远离聚合物的位置，或使用机械卷曲卷曲。

公开(公告)号：US06197663B1

公开(公告)日：2001-03-06

申请号：US09456210

申请日：1999-12-07

申请人： Edwin Arthur Chandross ,  Ananth Dodabalapur ,  Howard Edan Katz ,  Venkataram Reddy Raju

发明人： Edwin Arthur Chandross ,  Ananth Dodabalapur ,  Howard Edan Katz ,  Venkataram Reddy Raju

IPC分类号： H01L2130

CPC分类号： H01L29/78603 ,  H01L29/66765 ,  H01L29/78681 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0545

摘要： A process for fabricating an integrated circuit device is disclosed. The integrated circuit has a plurality of TFTs and an electrical interconnect structure. In the process, at least some constituents of the TFTs are formed on a first substrate. At least the interconnect structure is formed on a second substrate. The two substrates are laminated together to form the integrated circuit device having fully formed TFTs.

摘要翻译： 公开了一种用于制造集成电路器件的工艺。 集成电路具有多个TFT和电互连结构。 在该过程中，TFT的至少一些成分形成在第一基板上。 至少在第二基板上形成互连结构。 将两个基板层叠在一起以形成具有完全形成的TFT的集成电路器件。

公开(公告)号：US06232157B1

公开(公告)日：2001-05-15

申请号：US09450522

申请日：1999-11-29

申请人： Ananth Dodabalapur ,  Yen-Yi Lin ,  Venkataram Reddy Raju

发明人： Ananth Dodabalapur ,  Yen-Yi Lin ,  Venkataram Reddy Raju

IPC分类号： H01L2100

CPC分类号： H01L27/1218 ,  H01L21/743 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/283 ,  H01L29/78681 ,  H01L51/0036 ,  H01L51/005 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0077 ,  H01L51/0078 ,  H01L51/0508 ,  H01L51/0516 ,  H01L51/0541 ,  Y10S438/928

摘要： The specification describes thin film transistor integrated circuits wherein the TFT devices are field effect transistors with inverted structures. The interconnect levels are produced prior to the formation of the transistors. This structure leads to added flexibility in processing. The inverted structure is a result of removing the constraints in traditional semiconductor field effect device manufacture that are imposed by the necessity of starting the device fabrication with the single crystal semiconductor active material. In the inverted structure the active material, preferably an organic semiconductor, is formed last in the fabrication sequence. In a preferred embodiment the inverted TFT devices are formed on a flexible printed circuit substrate.

摘要翻译： 该说明书描述了薄膜晶体管集成电路，其中TFT器件是具有倒置结构的场效应晶体管。 在形成晶体管之前产生互连电平。 这种结构导致加工的灵活性增加。 反转结构是消除传统的半导体场效应器件制造中由于采用单晶半导体活性材料开始器件制造的必要性而产生的限制的结果。 在倒置结构中，最终在制造顺序中形成活性材料，优选有机半导体。 在优选实施例中，反向TFT器件形成在柔性印刷电路衬底上。

公开(公告)号：US06107117A

公开(公告)日：2000-08-22

申请号：US770535

申请日：1996-12-20

申请人： Zhenan Bao ,  Ananth Dodabalapur ,  Yi Feng ,  Venkataram Reddy Raju

发明人： Zhenan Bao ,  Ananth Dodabalapur ,  Yi Feng ,  Venkataram Reddy Raju

IPC分类号： C09K3/00 ,  H01L21/336 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40

CPC分类号： H01L51/0036 ,  H01L51/0003 ,  H01L51/0516 ,  H01L51/0545

摘要： A process for fabricating thin film transistors in which the active layer is an organic semiconducting material with a carrier mobility greater than 10.sup.-3 cm.sup.2 /Vs and a conductivity less than about 10.sup.-6 S/cm at 20.degree. C. is disclosed. The organic semiconducting material is a regioregular (3-alkylthiophene) polymer. The organic semiconducting films are formed by applying a solution of the regioregular polymer and a solvent over the substrate. The poly (3-alkylthiophene) films have a preferred orientation in which the thiophene chains has a planar stacking so the polymer backbone is generally parallel to the substrate surface.

摘要翻译： 公开了一种用于制造薄膜晶体管的工艺，其中有源层是在20℃下载流子迁移率大于10 -3 cm 2 / Vs和小于约10 -6 S / cm 2的电导率的有机半导体材料。 有机半导体材料是区域性（3-烷基噻吩）聚合物。 有机半导体薄膜是通过将区域状聚合物和溶剂的溶液涂覆在基材上形成的。 聚（3-烷基噻吩）膜具有其中噻吩链具有平面堆叠的优选取向，因此聚合物主链通常平行于基底表面。

公开(公告)号：US06020219A

公开(公告)日：2000-02-01

申请号：US939053

申请日：1997-09-26

申请人： Thomas Dixon Dudderar ,  Byung Joon Han ,  Venkataram Reddy Raju ,  George John Shevchuk

发明人： Thomas Dixon Dudderar ,  Byung Joon Han ,  Venkataram Reddy Raju ,  George John Shevchuk

IPC分类号： H01L21/58 ,  H01L23/04 ,  H01L23/24 ,  H01L21/52 ,  H01L21/54 ,  H01L21/56

CPC分类号： H01L24/83 ,  H01L23/04 ,  H01L23/24 ,  H01L24/32 ,  H01L2224/2919 ,  H01L2224/32057 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83385 ,  H01L2224/8385 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/16195 ,  H01L2924/1627 ,  H01L2924/16315 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043

摘要： A fragile device, such as an integrated circuit chip or a multichip assembly, is packaged by first dispensing a sol surrounding the sides of the device. The sol is laterally confined by means of a rim member typically made of a pre-molded plastic material. The amount of the sol dispensed is not sufficient to run over the top of the rim member. The sol is then heated to form a gel. If desired, a cover member can be put into place onto the top surface of the rim member, for the purpose of additional mechanical protection of the fragile device, for example.

摘要翻译： 通过首先分配围绕设备的侧面的溶胶来封装诸如集成电路芯片或多芯片组件的脆弱器件。 通过通常由预成型塑料材料制成的边缘构件将溶胶横向限制。 分配的溶胶的量不足以超过边缘构件的顶部。 然后将溶胶加热形成凝胶。 如果需要，例如，可以将盖构件放置在边缘构件的顶表面上，以便对脆弱装置进行额外的机械保护。

公开(公告)号：US6150668A

公开(公告)日：2000-11-21

申请号：US391729

申请日：1999-09-08

申请人： Zhenan Bao ,  Ananth Dodabalapur ,  Howard Edan Katz ,  Venkataram Reddy Raju ,  John A. Rogers

发明人： Zhenan Bao ,  Ananth Dodabalapur ,  Howard Edan Katz ,  Venkataram Reddy Raju ,  John A. Rogers

IPC分类号： H01L29/786 ,  G09F9/30 ,  H01L27/15 ,  H01L27/32 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01L33/00

CPC分类号： H01L27/3248 ,  H01L27/3274 ,  H01L51/0545 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/005

摘要： A device in which one or more thin film transistors are monolithically integrated with a light emitting diode is disclosed. The thin film transistor has an organic semiconductor layer. The light emitting layer of the light emitting diode is also an organic material. The device is fabricated economically by integrating the fabrication of the thin film transistor and the light emitting diode on the substrate and by employing low cost fabrication techniques.

摘要翻译： 公开了一种其中一个或多个薄膜晶体管与发光二极管单片集成的器件。 薄膜晶体管具有有机半导体层。 发光二极管的发光层也是有机材料。 通过将薄膜晶体管和发光二极管的制造集成在衬底上并通过采用低成本制造技术来经济地制造器件。

公开(公告)号：US5767447A

公开(公告)日：1998-06-16

申请号：US567659

申请日：1995-12-05

申请人： Thomas Dixon Dudderar ,  Byung Joon Han ,  Venkataram Reddy Raju ,  George John Shevchuk

发明人： Thomas Dixon Dudderar ,  Byung Joon Han ,  Venkataram Reddy Raju ,  George John Shevchuk

IPC分类号： H01L23/28 ,  H01L23/04 ,  H01L23/057 ,  H01L23/24 ,  H01L23/29 ,  H01L23/31 ,  H01L23/498 ,  H01L23/02

CPC分类号： H01L23/49816 ,  H01L23/04 ,  H01L23/057 ,  H01L23/24 ,  H01L24/32 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/351

摘要： The bottom and side surfaces of an electronic device, such as an integrated circuit chip or a multichip assembly, are surrounded by a soft gel medium. The gel medium is laterally confined by a rigid plastic rim that is epoxy-bonded in place along its perimeter. A plate, made of plastic or metal, can be attached to the top surface of the rim, in order to provide a cover for the package.

摘要翻译： 诸如集成电路芯片或多芯片组件的电子设备的底部和侧表面被软的凝胶介质包围。 凝胶介质通过刚性塑料边缘横向限制，该刚性塑料边缘沿其周边环氧粘合就位。 由塑料或金属制成的板可以附接到轮辋的顶面，以便为包装提供一个盖子。