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112 条记录 (耗时 0.037 秒)

    Bearing device
    4.
    发明授权
    Bearing device 有权
    轴承装置

    公开(公告)号：US08393792B2

    公开(公告)日：2013-03-12

    申请号：US12592915

    申请日：2009-12-04

    申请人： Yukitaka Muramoto ,  Masaru Kondo ,  Yasuaki Goto ,  Masao Takahashi

    发明人： Yukitaka Muramoto ,  Masaru Kondo ,  Yasuaki Goto ,  Masao Takahashi

    IPC分类号： F16C17/04

    CPC分类号： F16C33/046 ,  F16C17/04 ,  F16C35/02 ,  F16C41/008 ,  F16C2360/22

    摘要： In a bearing device 1, annular recesses 3a and 6a that house a thrust bearing 7 are formed in side surfaces of a housing 3 and a cap 6, a rotation preventing protrusion 12b is provided in an outer periphery of a lower side half-split thrust bearing 12 in the thrust bearing 7, and a rotation preventing groove 6b into which the rotation preventing protrusion 12b fits is formed in the annular recess 6a formed in the cap 6.

    摘要翻译： 在轴承装置1中，容纳推力轴承7的环形凹部3a，6a形成在壳体3和盖6的侧面，防转动突起12b设置在下侧半分离推力 推力轴承7中的轴承12和形成在盖6中的环形凹部6a中形成有旋转防止突起12b嵌合在其中的防旋转槽6b。

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110095430A1

    公开(公告)日：2011-04-28

    申请号：US12984142

    申请日：2011-01-04

    申请人： Koji TAKEMURA ,  Hiroshige Hirano ,  Yutaka Itoh ,  Hikari Sano ,  Masao Takahashi ,  Koji Koike

    发明人： Koji TAKEMURA ,  Hiroshige Hirano ,  Yutaka Itoh ,  Hikari Sano ,  Masao Takahashi ,  Koji Koike

    IPC分类号： H01L23/485

    CPC分类号： H01L23/585 ,  H01L21/76832 ,  H01L23/522 ,  H01L23/53295 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes at least three or more wiring layers stacked in an interlayer insulating film on a semiconductor substrate, a seal ring provided at the outer periphery of a chip region of the semiconductor substrate and a chip strength reinforcement provided in part of the chip region near the seal ring. The chip strength reinforcement is made of a plurality of dummy wiring structures and each of the plurality of dummy wiring structures is formed to extend across and within two or more of the wiring layers including one or none of the bottommost wiring layer and the topmost wiring layer using a via portion.

    摘要翻译： 一种半导体器件包括在半导体衬底上的层间绝缘膜中堆叠的至少三个或更多个布线层，设置在半导体衬底的芯片区域的外周处的密封环和在芯片区域的一部分中提供的芯片强度增强 靠近密封圈。 芯片强度加强件由多个虚拟布线结构构成，并且多个虚设布线结构中的每一个形成为跨越两个或更多个布线层中的两个或更多个布线层，包括最下面的布线层和最上面的布线层 使用通孔部分。

    SLIDING BEARING
    6.
    发明申请
    SLIDING BEARING 有权
    滑动轴承

    公开(公告)号：US20110002563A1

    公开(公告)日：2011-01-06

    申请号：US12736152

    申请日：2009-04-17

    申请人： Yukiyasu Taguchi ,  Masaru Kondo ,  Takashi Tomikawa ,  Katsuhiro Ashihara ,  Masao Takahashi

    发明人： Yukiyasu Taguchi ,  Masaru Kondo ,  Takashi Tomikawa ,  Katsuhiro Ashihara ,  Masao Takahashi

    IPC分类号： F16C29/02

    CPC分类号： F16C9/00 ,  F16C17/022 ,  F16C17/246 ,  F16C33/046 ,  F16C33/1065 ,  F16C2240/42 ,  F16C2360/22

    摘要： A sliding bearing 5 is composed of a pair of halved bearings 11, 12 and is provided with crush reliefs 11E, 12E in positions adjoining abutment surfaces 11B, 12B of these halved bearings. Chamfered portions 11D, 12D are formed in inward edge portions of the above-described abutment surfaces 11B, 12B, and a dust pocket 15 is formed on the middle side of the chamfered portions 11D, 12D. The relative angle α formed by the above-described crush reliefs 11E, 12E with sliding surfaces 13 in positions adjoining the crush reliefs 11E, 12E is set at 0.69° or more.Foreign substances 14 in a lubricating oil are discharged from openings of side portions of the crush reliefs 11E, 12E to the outside and are prevented from easily entering the sliding surfaces 13. A sliding bearing excellent in seizure resistance compared to that of conventional art can be provided.

    摘要翻译： 滑动轴承5由一对半轴承11,12组成，并且在与这些半轴承的邻接表面11B，12B相邻的位置处设置有挤压浮雕11E，12E。 倒角部11D，12D形成在上述抵接面11B，12B的内缘部，并且在倒角部11D，12D的中央形成有灰尘袋15。 由与上述挤压浮雕11E，12E相邻的位置处的滑动表面13形成的相对角α设定为0.69°以上。 润滑油中的异物14从挤压突起11E，12E的侧部开口排出到外部，并且防止其容易进入滑动表面13.与传统技术相比，耐咬合性优异的滑动轴承可以是 提供。

    Method for producing composite of aluminum alloy and thermoplastic resin
    7.
    发明授权
    Method for producing composite of aluminum alloy and thermoplastic resin 有权
    铝合金和热塑性树脂复合材料的制造方法

    公开(公告)号：US07640646B2

    公开(公告)日：2010-01-05

    申请号：US12010472

    申请日：2008-01-25

    申请人： Masanori Naritomi ,  Naoki Ando ,  Masao Takahashi ,  Masao Shiraishi

    发明人： Masanori Naritomi ,  Naoki Ando ,  Masao Takahashi ,  Masao Shiraishi

    IPC分类号： B23P25/00

    CPC分类号： B29C45/14311 ,  B29C45/14336 ,  B29C45/14778 ,  B29C2045/14868 ,  B29K2067/006 ,  B29K2705/00 ,  B29K2705/02 ,  B29L2031/3437 ,  Y10T29/49885 ,  Y10T29/4998 ,  Y10T29/49982 ,  Y10T29/49986 ,  Y10T428/12007

    摘要： The present invention is useful for achieving a reduction in weight and for attaining increased strength in not only electronic devices and domestic electric devices but also various parts and structures. As a pretreatment, a rib (3) is dipped in an aqueous solution of ammonia, hydrazine, a hydrazine derivative, or a water-soluble amine compound. A metal frame (2) is inserted into an injection mold for forming ribs (3) by injection molding. A thermoplastic resin composition is injected to the surface of the metal frame (2) by injection molding to form ribs (3). In the housing of a casing cover (1) thus formed, the metal frame (2) and the ribs (3) made of the thermoplastic resin composition are integrally bonded together. Thus, the housing improves strength and external appearance. Moreover, a complicated configuration and structure can be formed in the housing.

    摘要翻译： 本发明不仅可以实现电子设备和家用电器，还可以实现各种部件和结构，实现重量的减轻和强度的提高。 作为预处理，将肋（3）浸渍在氨，肼，肼衍生物或水溶性胺化合物的水溶液中。 金属框架（2）通过注射成型插入到用于形成肋（3）的注射模具中。 将热塑性树脂组合物通过注射模塑注入金属框架（2）的表面以形成肋（3）。 在如此形成的壳体盖（1）的壳体中，金属框架（2）和由热塑性树脂组合物制成的肋（3）整体地结合在一起。 因此，壳体提高了强度和外观。 此外，可以在壳体中形成复杂的构造和结构。

    Composite of aluminum alloy and resin and production method therefor
    8.
    发明申请
    Composite of aluminum alloy and resin and production method therefor 有权
    铝合金和树脂复合材料及其制备方法

    公开(公告)号：US20080127479A1

    公开(公告)日：2008-06-05

    申请号：US12010472

    申请日：2008-01-25

    申请人： Masanori Naritomi ,  Naoki Ando ,  Masao Takahashi ,  Masao Shiraishi

    发明人： Masanori Naritomi ,  Naoki Ando ,  Masao Takahashi ,  Masao Shiraishi

    IPC分类号： B23P17/00

    CPC分类号： B29C45/14311 ,  B29C45/14336 ,  B29C45/14778 ,  B29C2045/14868 ,  B29K2067/006 ,  B29K2705/00 ,  B29K2705/02 ,  B29L2031/3437 ,  Y10T29/49885 ,  Y10T29/4998 ,  Y10T29/49982 ,  Y10T29/49986 ,  Y10T428/12007

    摘要： The present invention is useful for achieving a reduction in weight and for attaining increased strength in not only electronic devices and domestic electric devices but also various parts and structures. As a pretreatment, a rib (3) is dipped in an aqueous solution of ammonia, hydrazine, a hydrazine derivative, or a water-soluble amine compound. A metal frame (2) is inserted into an injection mold for forming ribs (3) by injection molding. A thermoplastic resin composition is injected to the surface of the metal frame (2) by injection molding to form ribs (3). In the housing of a casing cover (1) thus formed, the metal frame (2) and the ribs (3) made of the thermoplastic resin composition are integrally bonded together. Thus, the housing improves strength and external appearance. Moreover, a complicated configuration and structure can be formed in the housing.

    摘要翻译： 本发明不仅可以实现电子设备和家用电器，还可以实现各种部件和结构，实现重量的减轻和强度的提高。 作为预处理，将肋（3）浸渍在氨，肼，肼衍生物或水溶性胺化合物的水溶液中。 金属框架（2）通过注射成型插入到用于形成肋（3）的注射模具中。 将热塑性树脂组合物通过注射模塑注入金属框架（2）的表面以形成肋（3）。 在如此形成的壳体盖（1）的壳体中，金属框架（2）和由热塑性树脂组合物制成的肋（3）整体地结合在一起。 因此，壳体提高了强度和外观。 此外，可以在壳体中形成复杂的构造和结构。

    Semiconductor device
    9.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US20080036042A1

    公开(公告)日：2008-02-14

    申请号：US11889210

    申请日：2007-08-09

    申请人： Hikari Sano ,  Masao Takahashi ,  Hiroshige Hirano ,  Koji Takemura

    发明人： Hikari Sano ,  Masao Takahashi ,  Hiroshige Hirano ,  Koji Takemura

    IPC分类号： H01L23/544

    CPC分类号： H01L23/585 ,  H01L21/78 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes: a circuit region having a function element formed on a semiconductor substrate; a scribe region located between the circuit region and another circuit region formed spaced from the circuit region, the scribe region including a cutting region and non-cutting regions provided at both sides of the cutting region; a first interlayer insulating film formed in the scribe region on the semiconductor substrate; a first dummy pattern made of conductive material and formed in the first interlayer insulating film in the cutting region; and a second dummy pattern made of conductive material and formed in the first interlayer insulating film in each of the non-cutting regions. The ratio, per unit area, of the area of the first dummy pattern to the area of the cutting region is lower than the ratio, per unit area, of the area of the second dummy pattern to the area of the non-cutting regions.

    摘要翻译： 半导体器件包括：具有形成在半导体衬底上的功能元件的电路区域; 位于所述电路区域和与所述电路区域间隔开的另一电路区域之间的划线区域，所述划线区域包括切割区域和设置在所述切割区域两侧的非切割区域; 形成在半导体衬底上的划线区域中的第一层间绝缘膜; 由导电材料制成并形成在切割区域中的第一层间绝缘膜中的第一虚设图形; 以及由导电材料制成并形成在每个非切割区域中的第一层间绝缘膜中的第二虚设图案。 第一虚设图形的面积与切割区域的面积的单位面积的比率低于第二虚拟图案的面积与非切割区域的面积的每单位面积的比率。

    Design method for semiconductor integrated circuit suppressing power supply noise
    10.
    发明授权
    Design method for semiconductor integrated circuit suppressing power supply noise 有权
    半导体集成电路抑制电源噪声的设计方法

    公开(公告)号：US07278124B2

    公开(公告)日：2007-10-02

    申请号：US11024470

    申请日：2004-12-30

    申请人： Kenji Shimazaki ,  Kazuhiro Sato ,  Takahiro Ichinomiya ,  Shozo Hirano ,  Masao Takahashi ,  Hiroyuki Tsujikawa ,  Seijiro Kojima

    发明人： Kenji Shimazaki ,  Kazuhiro Sato ,  Takahiro Ichinomiya ,  Shozo Hirano ,  Masao Takahashi ,  Hiroyuki Tsujikawa ,  Seijiro Kojima

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5036 ,  G06F17/5063

    摘要： An impedance of a power supply wire is calculated based on design data of a semiconductor integrated circuit, a frequency characteristic of the calculated impedance is obtained, and a design of the semiconductor integrated circuit is changed based on the obtained frequency characteristic. As the above-described impedance, an impedance between power supplies that are different in potential such as a power supply and a ground may be calculated, or an impedance between power supplies that are substantially the same in potential such as a power supply and an N-well power supply may be calculated. By a design modification, a wiring method, the number of pads, separation of power supplies, a type of package, a characteristic of an inductance element, a substrate structure, a distance between wires, a decoupling capacitance, a length of a wire, and a characteristic of a resistance element, for example, are changed.

    摘要翻译： 基于半导体集成电路的设计数据计算电源线的阻抗，获得所计算的阻抗的频率特性，并且基于获得的频率特性改变半导体集成电路的设计。 作为上述阻抗，可以计算诸如电源和地之间的电位不同的电源之间的阻抗，或者在诸如电源和N之间的电位基本上相同的电源之间的阻抗 - 可以计算电源。 通过设计修改，布线方法，焊盘的数量，电源的分离，封装的类型，电感元件的特性，基板结构，电线之间的距离，去耦电容，电线的长度， 并且例如电阻元件的特性被改变。