公开(公告)号：US5084235A

公开(公告)日：1992-01-28

申请号：US554158

申请日：1990-07-19

申请人： Eishi Ibe ,  Hidetoshi Karasawa ,  Maroto Nagase ,  Masaharu Sakagami ,  Shunsuke Uchida ,  Minoru Miki ,  Yamato Asakura ,  Motoaki Utamura ,  Fumio Kawamura ,  Katsumi Ohsumi ,  Yoshinori Chiba

发明人： Eishi Ibe ,  Hidetoshi Karasawa ,  Maroto Nagase ,  Masaharu Sakagami ,  Shunsuke Uchida ,  Minoru Miki ,  Yamato Asakura ,  Motoaki Utamura ,  Fumio Kawamura ,  Katsumi Ohsumi ,  Yoshinori Chiba

IPC分类号： G21C1/08 ,  G21C19/30

CPC分类号： G21C19/30 ,  G21C1/084 ,  Y02E30/31

摘要： A direct cycle type atomic power plant provided with a means for suppressing transfer of radioactive nitrogen compounds generated by nuclear reaction in the core from the reactor water to steam, where an increase in the dose rate in the main steam system and the turbine system due to carry-over of radioactive nitrogen atom, .sup.16 N, generated in the core can be suppressed, and the radioactivity therein can be reduced.

摘要翻译： 一种直接循环型原子能发电厂，其设置有用于抑制由核反应堆中的核反应产生的放射性氮化合物从反应器水转移到蒸汽的装置，其中主蒸汽系统和涡轮系统中的剂量率由于 可以抑制在核心中产生的放射性氮原子16N的转移，并且可以降低其中的放射性。

公开(公告)号：US4395386A

公开(公告)日：1983-07-26

申请号：US129753

申请日：1980-03-12

申请人： Yamato Asakura ,  Teiji Suzuki ,  Fumio Kawamura

发明人： Yamato Asakura ,  Teiji Suzuki ,  Fumio Kawamura

IPC分类号： B01D59/32 ,  B01J8/02 ,  B01J33/00 ,  C01B4/00 ,  C01B13/11 ,  B01D59/33 ,  G21C19/32

CPC分类号： C01B13/11 ,  B01J8/02 ,  B01J2208/0061

摘要： An apparatus for isotope exchange reaction is used in an apparatus for removing tritium in heavy water-moderated nuclear reactors or heavy water production plants, and comprises a plurality of mist generators and a plurality of reactor columns, the mist generators and the reactor columns being alternately arranged and connected to one another successively in the alternate order. An ultra-sonic generator is provided each in the mist generators. A hydrophobic catalyst bed and a mist separator are provided each in the reactor columns. Water containing hydrogen isotopes to be removed is led into the mist generators to form mists. Mists of the water are supplied into the reactor columns together with hydrogen gas and isotope exchange reaction is carried out in the hydrophobic catalyst beds.

摘要翻译： 用于同位素交换反应的装置用于在重水慢化核反应堆或重水生产设备中除去氚的装置中，并且包括多个雾化发生器和多个反应器塔，雾化发生器和反应器列交替地 相互依次排列并相互连接。 在雾发生器中每个设置超声波发生器。 在反应器塔中分别设置疏水催化剂床和雾分离器。 含有待除去的氢同位素的水被引入雾气发生器以形成雾。 雾气与氢气一起供入反应器塔中，并在疏水催化剂床中进行同位素交换反应。

公开(公告)号：US08084281B2

公开(公告)日：2011-12-27

申请号：US12087048

申请日：2007-03-15

申请人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： H01L21/00

CPC分类号： C30B9/10 ,  C30B19/02 ,  C30B19/063 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7787 ,  H01L33/0075

摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.

摘要翻译： 本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个 选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。 在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。 在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

公开(公告)号：US07794539B2

公开(公告)日：2010-09-14

申请号：US10599501

申请日：2005-03-31

申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Yasuhito Takahashi

发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Yasuhito Takahashi

IPC分类号： C30B9/00 ,  C30B30/04 ,  C30B28/06 ,  C30B11/00

CPC分类号： C30B9/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1092 ,  Y10T117/1096

摘要： A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used therein, and a semiconductor element obtained using the method and the apparatus are provided. The method is a method for producing Group-III-element nitride crystals that includes a crystal growth process of subjecting a material solution containing a Group III element, nitrogen, and at least one of alkali metal and alkaline-earth metal to pressurizing and heating under an atmosphere of a nitrogen-containing gas so that the nitrogen and the Group III element in the material solution react with each other to grow crystals. The method further includes, prior to the crystal growth process, a material preparation process of preparing the material solution in a manner that under an atmosphere of a nitrogen-containing gas, at least one of an ambient temperature and an ambient pressure is set so as to be higher than is set as a condition for the crystal growth process so that the nitrogen is allowed to dissolve in a melt containing the Group III element and the at least one of alkali metal and alkaline-earth metal. The method according to the present invention can be performed by using, for example, the producing apparatus shown in FIG. 7.

摘要翻译： 一种生产III族元素的氮化物晶体的方法，其中获得了改善的生长速率并且可以在短时间内生长大量的高质量晶体，其中使用的制造装置以及使用该方法和装置得到的半导体元件 被提供。 该方法是生产III族元素氮化物晶体的方法，其包括使含有III族元素，氮和至少一种碱金属和碱土金属的材料溶液经受加压和加热的晶体生长过程 含氮气体的气氛使得材料溶液中的氮和III族元素彼此反应生长晶体。 该方法还包括在晶体生长过程之前，制备材料制备方法，该方法是在含氮气体的气氛中，将环境温度和环境压力中的至少一种设定为 高于设定为晶体生长过程的条件，使得氮能够溶解在含有III族元素和碱金属和碱土金属中的至少一种的熔体中。 根据本发明的方法可以通过使用例如图1所示的制造装置来执行。 7。

公开(公告)号：US20090013924A1

公开(公告)日：2009-01-15

申请号：US12212722

申请日：2008-09-18

申请人： Makoto Iwai ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Makoto Iwai ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B19/02 ,  B01J3/04

CPC分类号： C30B9/00 ,  C30B29/403 ,  C30B35/00 ,  Y10T117/1096

摘要： A nitride single crystal is produced using a growth solution 7 containing an easily oxidizable material. A crucible 1 for storing the growth solution 7, a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen, and an oxygen absorber 14, 15 disposed inside the pressure vessel and outside the crucible 1 are used to grow the nitride single crystal.

摘要翻译： 使用含有容易氧化的材料的生长溶液7制造氮化物单晶。 用于储存生长溶液7的坩埚1，用于储存坩埚的压力容器和至少含有氮气的装置以及设置在压力容器内部和坩埚外部的氧吸收器14,15用于使氮化物单体 水晶。

公开(公告)号：US20080283968A1

公开(公告)日：2008-11-20

申请号：US11579645

申请日：2005-03-30

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

IPC分类号： H01L29/20 ,  C03B9/00

CPC分类号： C30B9/12 ,  C30B11/00 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625 ,  H01L33/0075 ,  H01S5/32341

摘要： A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.

摘要翻译： 一种制造III族氮化物半导体晶体的方法包括以下步骤：在反应器中容纳至少含有III族金属元素和碱金属元素的合金，将含氮物质引入反应器中，将含氮物质 提供合金熔融的合金中的物质，以及生长III族氮化物半导体晶体。 因此可以提供获得小吸收系数的III族氮化物半导体晶体及其制造方法，以及获得高发光强度的III族氮化物半导体器件。

公开(公告)号：US20080213158A1

公开(公告)日：2008-09-04

申请号：US12082745

申请日：2008-04-14

申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Hidekazu Umeda ,  Yasuhito Takahashi

发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Hidekazu Umeda ,  Yasuhito Takahashi

IPC分类号： C30B23/00 ,  C01B21/06

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B29/406 ,  C30B35/00 ,  Y10T117/1064 ,  Y10T117/1096

摘要： A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented. Further, since the gas flows through the reactor vessel (120), there is no aggregation of an evaporating alkali metal, etc., at the gas inlet or the like, and such an alkali metal does not flow into the gas supplying device (180). As a result, the quality of Group III nitride crystals obtained can be improved.

摘要翻译： 提供III族氮化物晶体的制造装置和制造III族氮化物晶体的方法，由此可以制造高质量的晶体。 例如，使用本发明的装置如下生长晶体。 将晶体原料（131）和含氮气体引入反应器容器（120）中，通过加热器（110）向其施加热量，并在施加压力的气氛中生长晶体。 气体通过反应器容器的气体入口从气体供给装置（180）引入反应器容器（120），然后通过反应器的气体出口被排出到耐压容器（102）的内部 反应堆容器。 由于气体不通过耐压容器（102）直接引入反应器容器（120），附着在耐压容器（102）等上的杂质混合物进入晶体生长位置可以 被阻止 此外，由于气体流过反应器容器（120），所以在气体入口等处没有蒸发的碱金属等的聚集，并且这种碱金属不会流入气体供给装置（180 ）。 结果，可以提高获得的III族氮化物晶体的质量。

公开(公告)号：US20080022921A1

公开(公告)日：2008-01-31

申请号：US11628253

申请日：2005-04-15

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

IPC分类号： C30B29/38 ,  C30B11/06 ,  C30B9/10 ,  H01L33/00

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B11/00 ,  H01L33/0075 ,  H01L33/32

摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

摘要翻译： 一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有 至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中 至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。 可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

公开(公告)号：US20080011224A1

公开(公告)日：2008-01-17

申请号：US11837557

申请日：2007-08-13

申请人： Makoto Iwai ,  Katsuhiro Imai ,  Takatomo Sasaki ,  Fumio Kawamura ,  Minoru Kawahara ,  Hiroaki Isobe

发明人： Makoto Iwai ,  Katsuhiro Imai ,  Takatomo Sasaki ,  Fumio Kawamura ,  Minoru Kawahara ,  Hiroaki Isobe

IPC分类号： C30B29/38 ,  C30B1/00 ,  C30B23/00

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B9/12

摘要： An object of the present invention is to provide a novel method of growing hexagonal boron nitride single crystal. It is found that hexagonal boron nitride single crystal is grown in calcium nitride flux by heating, or heating and then slowly cooling, boron nitride and calcium series material in atmosphere containing nitrogen. Bulk of hexagonal boron nitride single crystal can thereby successfully be grown.

摘要翻译： 本发明的目的是提供一种生长六方氮化硼单晶的新方法。 发现六方氮化硼单晶通过在含氮气氛中加热或加热然后缓慢冷却氮化硼和钙系列材料而在氮化钙焊剂中生长。 从而能够成功生长六方晶系氮化硼单晶体。

公开(公告)号：US20080008642A1

公开(公告)日：2008-01-10

申请号：US11661013

申请日：2005-08-24

申请人： Yusuke Mori ,  Takatamo Sasaki ,  Fumio Kawamura ,  Yoshimura Masashi ,  Minoru Kawahara ,  Hiroaki Isobe

发明人： Yusuke Mori ,  Takatamo Sasaki ,  Fumio Kawamura ,  Yoshimura Masashi ,  Minoru Kawahara ,  Hiroaki Isobe

IPC分类号： C01B21/072 ,  C30B29/38 ,  C30B9/10

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B9/10

摘要： The present invention provides a method for producing aluminum nitride crystals under mild pressure and temperature conditions. In the production method of aluminum nitride crystals, aluminum nitride crystals are formed and grown in the presence of nitrogen-containing gas by allowing aluminum and the nitrogen to react with each other in a flux containing the following component (A) and component (B), or a flux containing the following component (B). (A) At least one element selected from the group consisting of the alkali metal and the alkaline-earth metal. (B) At least one element selected from the group consisting of tin (Sn), gallium (Ga), indium (In), bismuth (Bi) and mercury (Hg).

摘要翻译： 本发明提供了在温和的压力和温度条件下制备氮化铝晶体的方法。 在氮化铝晶体的制造方法中，通过使含有以下成分（A）和成分（B）的助熔剂中的铝和氮彼此反应，在含氮气体的存在下，形成氮化铝晶体， ，或含有以下组分（B）的助熔剂。 （A）选自由碱金属和碱土金属组成的组中的至少一种元素。 （B）选自锡（Sn），镓（Ga），铟（In），铋（Bi）和汞（Hg）中的至少一种元素。