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36 条记录 (耗时 0.017 秒)

    Method for kinetically controlled etching of copper
    6.
    发明授权
    Method for kinetically controlled etching of copper 失效
    铜的动态控制蚀刻方法

    公开(公告)号：US07976723B2

    公开(公告)日：2011-07-12

    申请号：US11749800

    申请日：2007-05-17

    申请人： David L. Rath ,  Emanuel I. Cooper

    发明人： David L. Rath ,  Emanuel I. Cooper

    IPC分类号： G03C5/58 ,  C09K13/00

    CPC分类号： H01L21/32134 ,  C23F1/14 ,  C23F1/18 ,  C23F1/34

    摘要： An etching composition, particularly for kinetically controlled etching of copper and copper alloy surfaces; a process for etching copper and copper alloys, particularly for etching at high rates to provide uniform and smooth, isotropic surfaces; an etched copper or copper alloy surface obtained by the process; and a process for generating copper or copper alloy electrical interconnects or contact pads. The etching composition and etching processes provide a smooth, isotropic fast etch of copper and copper alloys for semiconductor fabrication and packaging.

    摘要翻译： 蚀刻组合物，特别用于铜和铜合金表面的动态控制蚀刻; 蚀刻铜和铜合金的方法，特别是用于高速蚀刻以提供均匀和光滑的各向同性表面的方法; 通过该方法获得的蚀刻铜或铜合金表面; 以及用于产生铜或铜合金电互连或接触焊盘的工艺。 蚀刻组合物和蚀刻工艺提供用于半导体制造和封装的铜和铜合金的平滑，各向同性的快速蚀刻。

    Method for isotropic etching of copper
    7.
    发明授权
    Method for isotropic etching of copper 失效
    铜的各向同性蚀刻方法

    公开(公告)号：US07537709B2

    公开(公告)日：2009-05-26

    申请号：US11401898

    申请日：2006-04-12

    申请人： Emanuel I. Cooper ,  Bruce Furman ,  David L. Rath

    发明人： Emanuel I. Cooper ,  Bruce Furman ,  David L. Rath

    IPC分类号： C09K13/00

    CPC分类号： C23G1/103 ,  C23C22/63 ,  C23F1/34 ,  H01L21/32134

    摘要： Copper and copper alloys are etched to provide uniform and smooth surface by employing an aqueous composition that comprises an oxidant, a mixture of at least one weak complexant and at least one strong complexant for the copper or copper alloy, and water and has a pH of about 6 to about 12 so as to form an oxidized etch controlling layer and to uniformly remove the copper or copper alloy; and then removing the oxidized etch controlling layer with a non-oxidizing composition. Copper and copper alloy structure, having smooth upper surfaces are also provided.

    摘要翻译： 铜和铜合金被蚀刻以通过使用包含氧化剂，至少一种弱络合剂和至少一种用于铜或铜合金的强配位剂的混合物和水的水性组合物和水而提供均匀和光滑的表面，并且具有 约6至约12以形成氧化蚀刻控制层并均匀地除去铜或铜合金; 然后用非氧化组合物除去氧化的蚀刻控制层。 还提供了具有光滑上表面的铜和铜合金结构。

    Sealed DASD having humidity control and method of making same
    8.
    发明授权
    Sealed DASD having humidity control and method of making same 失效
    具有湿度控制的密封DASD及其制造方法

    公开(公告)号：US5392177A

    公开(公告)日：1995-02-21

    申请号：US248137

    申请日：1994-05-24

    申请人： Timothy J. Chainer ,  Emanuel I. Cooper ,  Suryanarayan G. Hegde ,  Chandrasekhar Narayan

    发明人： Timothy J. Chainer ,  Emanuel I. Cooper ,  Suryanarayan G. Hegde ,  Chandrasekhar Narayan

    IPC分类号： G11B23/50 ,  G11B33/14

    CPC分类号： G11B23/507 ,  G11B33/1453

    摘要： A sealed direct access storage device wherein a head is positioned for interaction with a storage medium in which the relative humidity is controlled by placing a predetermined amount of desiccant and a predetermined amount of water in the sealed volume of the device. At any given steady state temperature within a predetermined operating range the water vapor within the free space within the device and the water contained in the desiccant are in equilibrium and the relative humidity is controlled within acceptable limits.

    摘要翻译： 一种密封的直接存取存储装置，其中头被定位成与通过将预定量的干燥剂和预定量的水放置在装置的密封体积中来控制相对湿度的存储介质相互作用。 在预定操作范围内的任何给定的稳态温度下，装置内的自由空间内的水蒸气和干燥剂中所含的水均处于平衡状态，并将相对湿度控制在可接受的限度内。

    COMPOSITION FOR AND METHOD OF SUPPRESSING TITANIUM NITRIDE CORROSION
    9.
    发明申请
    COMPOSITION FOR AND METHOD OF SUPPRESSING TITANIUM NITRIDE CORROSION 有权
    抑制氮化钛腐蚀的组合物和方法

    公开(公告)号：US20130303420A1

    公开(公告)日：2013-11-14

    申请号：US13878684

    申请日：2011-10-13

    申请人： Emanuel I. Cooper ,  George Gabriel Totir ,  Makonnen Payne

    发明人： Emanuel I. Cooper ,  George Gabriel Totir ,  Makonnen Payne

    IPC分类号： C11D3/00

    CPC分类号： C11D3/0073 ,  C11D3/046 ,  C11D3/26 ,  C11D3/3942 ,  C11D3/3947 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/76814

    摘要： Cleaning compositions and processes for cleaning residue from a microelectronic device having said residue thereon. The composition comprises at least one amine, at least one oxidizing agent, water, and at least one borate species and achieves highly efficacious cleaning of the residue material, including post-ash residue, post-etch residue, post-CMP residue, particles, organic contaminants, metal ion contaminants, and combinations thereof from the microelectronic device while simultaneously not damaging the titanium nitride layers and low-k dielectric materials also present on the device.

    摘要翻译： 用于从其上具有所述残余物的微电子器件清洁残留物的清洁组合物和方法。 组合物包含至少一种胺，至少一种氧化剂，水和至少一种硼酸盐物质，并且实现残余物质的高效清洁，包括后灰渣残留物，蚀刻后残留物，CMP后残留物，颗粒， 有机污染物，金属离子污染物及其组合，同时不损坏也存在于该装置上的氮化钛层和低k电介质材料。