公开(公告)号：US20120135590A1

公开(公告)日：2012-05-31

申请号：US13306616

申请日：2011-11-29

申请人： Bryan C. Hendrix ,  Emanuel I. Cooper

发明人： Bryan C. Hendrix ,  Emanuel I. Cooper

IPC分类号： H01L21/28

CPC分类号： H01L29/66545 ,  H01L21/32135

摘要： A method of fabricating a semiconductor device, comprising carrying out a gate last process including forming a dummy gate of polysilicon, and thereafter removing the dummy gate for replacement by a metal gate, wherein the dummy gate is removed by XeF2 etch removal.

摘要翻译： 一种制造半导体器件的方法，包括执行包括形成多晶硅的虚拟栅极的栅极最后工艺，然后通过金属栅极去除用于替换的虚拟栅极，其中通过XeF2蚀刻去除去除伪栅极。

公开(公告)号：US20140038420A1

公开(公告)日：2014-02-06

申请号：US13877777

申请日：2011-10-06

申请人： Tianniu Chen ,  Nicole E. Thomas ,  Steven Lippy ,  Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Peng Zhang

发明人： Tianniu Chen ,  Nicole E. Thomas ,  Steven Lippy ,  Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Peng Zhang

IPC分类号： H01L21/8238 ,  H01L21/28

CPC分类号： H01L21/28088 ,  B81C1/00539 ,  H01L21/28079 ,  H01L21/32134 ,  H01L21/823842

摘要： A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.

摘要翻译： 一种用于从其上具有所述材料的微电子器件相对于第二金属栅极材料（例如，氮化钽）选择性地去除第一金属栅极材料（例如氮化钛）的去除组合物和工艺。 除去组合物可以包括氟化物或者基本上不含氟化物。 衬底优选地包括高k /金属栅极集成方案。

公开(公告)号：US20130303420A1

公开(公告)日：2013-11-14

申请号：US13878684

申请日：2011-10-13

申请人： Emanuel I. Cooper ,  George Gabriel Totir ,  Makonnen Payne

发明人： Emanuel I. Cooper ,  George Gabriel Totir ,  Makonnen Payne

IPC分类号： C11D3/00

CPC分类号： C11D3/0073 ,  C11D3/046 ,  C11D3/26 ,  C11D3/3942 ,  C11D3/3947 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/76814

摘要： Cleaning compositions and processes for cleaning residue from a microelectronic device having said residue thereon. The composition comprises at least one amine, at least one oxidizing agent, water, and at least one borate species and achieves highly efficacious cleaning of the residue material, including post-ash residue, post-etch residue, post-CMP residue, particles, organic contaminants, metal ion contaminants, and combinations thereof from the microelectronic device while simultaneously not damaging the titanium nitride layers and low-k dielectric materials also present on the device.

摘要翻译： 用于从其上具有所述残余物的微电子器件清洁残留物的清洁组合物和方法。 组合物包含至少一种胺，至少一种氧化剂，水和至少一种硼酸盐物质，并且实现残余物质的高效清洁，包括后灰渣残留物，蚀刻后残留物，CMP后残留物，颗粒， 有机污染物，金属离子污染物及其组合，同时不损坏也存在于该装置上的氮化钛层和低k电介质材料。

公开(公告)号：US07868410B2

公开(公告)日：2011-01-11

申请号：US12040350

申请日：2008-02-29

申请人： Philippe M. Vereecken ,  Veeraraghavan S. Basker ,  Cyril Cabral, Jr. ,  Emanuel I. Cooper ,  Hariklia Deligianni ,  Martin M. Frank ,  Rajarao Jammy ,  Vamsi Krishna Paruchuri ,  Katherine L. Saenger ,  Xiaoyan Shao

发明人： Philippe M. Vereecken ,  Veeraraghavan S. Basker ,  Cyril Cabral, Jr. ,  Emanuel I. Cooper ,  Hariklia Deligianni ,  Martin M. Frank ,  Rajarao Jammy ,  Vamsi Krishna Paruchuri ,  Katherine L. Saenger ,  Xiaoyan Shao

IPC分类号： H01L21/70

CPC分类号： H01L21/2885 ,  C25D3/50 ,  C25D5/02 ,  C25D5/024 ,  C25D5/54 ,  C25D7/123 ,  C25D9/04 ,  C25F3/14 ,  H01L21/28079 ,  H01L21/28114 ,  H01L21/76885 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78648

摘要： A method is provided for electroplating a gate metal or other conducting or semiconducting material directly on a dielectric such as a gate dielectric. The method involves selecting a substrate, dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be passed from the substrate through the dielectric layer into the electrolyte solution or melt. Methods are also provided for electrochemical modification of dielectrics utilizing through-dielectric current flow.

摘要翻译： 提供了一种用于将栅极金属或其它导电或半导体材料直接电镀在诸如栅极电介质的电介质上的方法。 该方法包括选择衬底，电介质层和电解质溶液或熔体，其中衬底，电介质层和电解质溶液或熔体的组合允许电化学电流从衬底通过电介质层进入电解质溶液或 熔化。 还提供了利用电介质电流流动的电介质电化学修饰方法。

公开(公告)号：US20100051474A1

公开(公告)日：2010-03-04

申请号：US12548893

申请日：2009-08-27

申请人： Panayotis C. Andricacos ,  Caliopi Andricacos ,  Donald F. Canaperi ,  Emanuel I. Cooper ,  John M. Cotte ,  Hariklia Deligianni ,  Laertis Economikos ,  Daniel C. Edelstein ,  Silvia Franz ,  Balasubramanian Pranatharthiharan ,  Mahadevaiyer Krishnan ,  Andrew P. Mansson ,  Erick G. Walton ,  Alan C. West

发明人： Panayotis C. Andricacos ,  Caliopi Andricacos ,  Donald F. Canaperi ,  Emanuel I. Cooper ,  John M. Cotte ,  Hariklia Deligianni ,  Laertis Economikos ,  Daniel C. Edelstein ,  Silvia Franz ,  Balasubramanian Pranatharthiharan ,  Mahadevaiyer Krishnan ,  Andrew P. Mansson ,  Erick G. Walton ,  Alan C. West

IPC分类号： B23H5/06

CPC分类号： C25F3/02 ,  B23H5/08 ,  C09G1/04 ,  H01L21/32125

摘要： Methods and compositions for electro-chemical-mechanical polishing (e-CMP) of silicon chip interconnect materials, such as copper, are provided. The methods include the use of compositions according to the invention in combination with pads having various configurations.

摘要翻译： 提供了诸如铜之类的硅芯片互连材料的电化学机械抛光（e-CMP）的方法和组合物。 所述方法包括使用根据本发明的组合物与具有各种构型的垫组合。

公开(公告)号：US06197222B1

公开(公告)日：2001-03-06

申请号：US09119569

申请日：1998-07-20

申请人： Ravi F. Saraf ,  Judith Marie Roldan ,  Michael Anthony Gaynes ,  Richard Benton Booth ,  Steven Paul Ostrander ,  Emanuel I. Cooper ,  Carlos J. Sambucetti

发明人： Ravi F. Saraf ,  Judith Marie Roldan ,  Michael Anthony Gaynes ,  Richard Benton Booth ,  Steven Paul Ostrander ,  Emanuel I. Cooper ,  Carlos J. Sambucetti

IPC分类号： H01B104

CPC分类号： H01L24/81 ,  H01B1/22 ,  H01L23/49883 ,  H01L2224/13009 ,  H01L2224/81801 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H05K3/321 ,  H05K3/4614 ,  H05K3/4632 ,  H05K2201/0129 ,  H05K2201/0133 ,  H05K2201/0162 ,  H05K2203/0783

摘要： An electrically conductive paste which includes a thermoplastic polymer, a conductive metal powder and an organic solvent system is disclosed. The invention further encompasses an electrically conductive composite which includes the aforementioned thermoplastic and metal, wherein the metal represents at least about 30% by volume, based on the total volume of the composite. The composite is formed from the paste under elevated temperature. The paste is employed in processes which involve electrically connecting electrical and electronic components under process conditions which convert the paste to the composite.

摘要翻译： 公开了一种包括热塑性聚合物，导电金属粉末和有机溶剂系统的导电浆料。 本发明还包括一种包含上述热塑性和金属的导电复合材料，其中基于复合材料的总体积，金属占体积的至少约30体积％。 复合材料由高温下的糊料形成。 该糊剂用于涉及将糊料转化为复合材料的工艺条件下的电气和电子部件电连接的工艺。

公开(公告)号：US07976723B2

公开(公告)日：2011-07-12

申请号：US11749800

申请日：2007-05-17

申请人： David L. Rath ,  Emanuel I. Cooper

发明人： David L. Rath ,  Emanuel I. Cooper

IPC分类号： G03C5/58 ,  C09K13/00

CPC分类号： H01L21/32134 ,  C23F1/14 ,  C23F1/18 ,  C23F1/34

摘要： An etching composition, particularly for kinetically controlled etching of copper and copper alloy surfaces; a process for etching copper and copper alloys, particularly for etching at high rates to provide uniform and smooth, isotropic surfaces; an etched copper or copper alloy surface obtained by the process; and a process for generating copper or copper alloy electrical interconnects or contact pads. The etching composition and etching processes provide a smooth, isotropic fast etch of copper and copper alloys for semiconductor fabrication and packaging.

摘要翻译： 蚀刻组合物，特别用于铜和铜合金表面的动态控制蚀刻; 蚀刻铜和铜合金的方法，特别是用于高速蚀刻以提供均匀和光滑的各向同性表面的方法; 通过该方法获得的蚀刻铜或铜合金表面; 以及用于产生铜或铜合金电互连或接触焊盘的工艺。 蚀刻组合物和蚀刻工艺提供用于半导体制造和封装的铜和铜合金的平滑，各向同性的快速蚀刻。

公开(公告)号：US07537709B2

公开(公告)日：2009-05-26

申请号：US11401898

申请日：2006-04-12

申请人： Emanuel I. Cooper ,  Bruce Furman ,  David L. Rath

发明人： Emanuel I. Cooper ,  Bruce Furman ,  David L. Rath

IPC分类号： C09K13/00

CPC分类号： C23G1/103 ,  C23C22/63 ,  C23F1/34 ,  H01L21/32134

摘要： Copper and copper alloys are etched to provide uniform and smooth surface by employing an aqueous composition that comprises an oxidant, a mixture of at least one weak complexant and at least one strong complexant for the copper or copper alloy, and water and has a pH of about 6 to about 12 so as to form an oxidized etch controlling layer and to uniformly remove the copper or copper alloy; and then removing the oxidized etch controlling layer with a non-oxidizing composition. Copper and copper alloy structure, having smooth upper surfaces are also provided.

摘要翻译： 铜和铜合金被蚀刻以通过使用包含氧化剂，至少一种弱络合剂和至少一种用于铜或铜合金的强配位剂的混合物和水的水性组合物和水而提供均匀和光滑的表面，并且具有 约6至约12以形成氧化蚀刻控制层并均匀地除去铜或铜合金; 然后用非氧化组合物除去氧化的蚀刻控制层。 还提供了具有光滑上表面的铜和铜合金结构。

公开(公告)号：US5392177A

公开(公告)日：1995-02-21

申请号：US248137

申请日：1994-05-24

申请人： Timothy J. Chainer ,  Emanuel I. Cooper ,  Suryanarayan G. Hegde ,  Chandrasekhar Narayan

发明人： Timothy J. Chainer ,  Emanuel I. Cooper ,  Suryanarayan G. Hegde ,  Chandrasekhar Narayan

IPC分类号： G11B23/50 ,  G11B33/14

CPC分类号： G11B23/507 ,  G11B33/1453

摘要： A sealed direct access storage device wherein a head is positioned for interaction with a storage medium in which the relative humidity is controlled by placing a predetermined amount of desiccant and a predetermined amount of water in the sealed volume of the device. At any given steady state temperature within a predetermined operating range the water vapor within the free space within the device and the water contained in the desiccant are in equilibrium and the relative humidity is controlled within acceptable limits.

摘要翻译： 一种密封的直接存取存储装置，其中头被定位成与通过将预定量的干燥剂和预定量的水放置在装置的密封体积中来控制相对湿度的存储介质相互作用。 在预定操作范围内的任何给定的稳态温度下，装置内的自由空间内的水蒸气和干燥剂中所含的水均处于平衡状态，并将相对湿度控制在可接受的限度内。

公开(公告)号：US09831088B2

公开(公告)日：2017-11-28

申请号：US13877777

申请日：2011-10-06

申请人： Tianniu Chen ,  Nicole E. Thomas ,  Steven Lippy ,  Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Peng Zhang

发明人： Tianniu Chen ,  Nicole E. Thomas ,  Steven Lippy ,  Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Peng Zhang

IPC分类号： H01L21/461 ,  H01L21/28 ,  B81C1/00 ,  H01L21/3213 ,  H01L21/8238

CPC分类号： H01L21/28088 ,  B81C1/00539 ,  H01L21/28079 ,  H01L21/32134 ,  H01L21/823842

摘要： A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.