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1.发明申请PROCESS FOR MANUFACTURING A MASK HAVING SUBMILLIMETRIC OPENINGS FOR PRODUCING A SUBMILLIMETRIC GRID, AND SUBMILLIMETRIC GRID 审中-公开用于制造具有用于生产低密度聚乙烯的次级开口的掩模的方法以及亚微米级网格公开(公告)号：US20100059365A1
公开(公告)日：2010-03-11
申请号：US12531699
申请日：2008-03-21
IPC分类号： C25D17/10 , B05D1/32 , B05D1/36 , B05D5/12 , C23C14/04 , C23C14/34 , C25D5/02 , B32B3/10 , B32B17/06 , H01L31/0224 , H01J9/02 , H05K9/00 , H05B3/02
CPC分类号： C03C17/002 , B82Y20/00 , B82Y30/00 , C03C17/06 , C03C17/22 , C03C2217/252 , C03C2218/116 , C03C2218/34 , G02F1/155 , G02F2001/1555 , H01L51/102 , H01L51/5203 , H01L51/56 , H01L2251/5369 , Y10T428/24802 , Y10T428/24926
摘要： A process for manufacturing a mask having submillimetric openings on a surface portion of a substrate, characterized in that: a layer known as a mask layer is deposited from a solution of colloidal particles that are stabilized and dispersed in a solvent; and the drying of the mask layer is carried out until a two-dimensional irregular network of substantially straight-edged interstices that gives a mask is obtained, with a random mesh of interstices in at least one direction. Submillimetric grid obtained by the process.
摘要翻译： 一种在基板的表面部分上制造具有亚毫米开口的掩模的方法，其特征在于：从稳定分散在溶剂中的胶体颗粒溶液中沉积称为掩模层的层; 并且进行掩模层的干燥，直到获得具有至少一个方向的间隙的随机网格的给出掩模的基本上直边的间隙的二维不规则网络。 通过该过程获得亚微米网格。
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2.发明申请公开(公告)号：US20110247859A1
公开(公告)日：2011-10-13
申请号：US13120567
申请日：2009-09-25
申请人： Georges Zagdoun , Bernard Nghiem , Emmanuel Valentin , Eddy Royer
发明人： Georges Zagdoun , Bernard Nghiem , Emmanuel Valentin , Eddy Royer
CPC分类号： H01B1/02 , C23C14/048 , H01L31/022425 , H01L31/18 , H05B33/26 , Y02E10/50
摘要： The manufacture of a submillimetric grid includes the production of a mask having submillimetric openings, referred to as a network mask, on the main face, from a solution of colloidal nanoparticles with a given glass transition temperature Tg, the drying of the masking layer at a temperature below the Tg; the formation of the electroconductive grid from the network mask including in this order: deposition of at least one electroconductive material, referred to as grid material, having an electricity resistivity of less than 10−5 ohm.cm; removal of the masking layer, revealing the mother grid; optional deposition, by electrodeposition, of an electroconductive material, referred to as overgrid material, the surface subjacent to the mother grid then being dielectric; a detachment, of the mother grid or the overgrid, of a thickness of at least 500 nm. The invention also relates to the detached grid.
摘要翻译： 亚毫米格栅的制造包括在具有给定的玻璃化转变温度Tg的胶体纳米颗粒的溶液中生产具有亚毫米开口的掩模，称为网罩，在主表面上，掩蔽层在一个 温度低于Tg; 从网络掩模形成包括以下顺序的导电栅格：沉积至少一种导电材料，称为网格材料，其电阻率小于10-5欧姆·厘米; 去除掩蔽层，露出母格; 通过电沉积可选地沉积称为过网状材料的导电材料，与母格栅相邻的表面为电介质; 至少500nm的厚度的母格或网格的分离。 本发明还涉及分离格栅。
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3.发明授权Method for manufacturing a mask having submillimetric apertures for a submillimetric electrically conductive grid, and mask and submillimetric electrically conductive grid 失效用于制造具有亚毫米级导电栅格的亚毫米孔的掩模的方法，以及掩模和亚毫米级导电栅格公开(公告)号：US08697186B2
公开(公告)日：2014-04-15
申请号：US13120292
申请日：2009-09-24
IPC分类号： B05D5/00
CPC分类号： C03C17/002 , B82Y20/00 , B82Y30/00 , C03C17/06 , C03C17/09 , C03C17/22 , C03C2217/252 , C03C2218/116 , C03C2218/15 , C03C2218/34 , H01L51/5203 , H01L51/56 , H01L2251/5369
摘要： A process for manufacturing a mask having submillimetric openings, in which: for a masking layer, a first solution of colloidal nanoparticles in a first solvent is deposited, the particles having a given glass transition temperature Tg, the drying of the masking layer, known as the first masking layer, is carried out at a temperature below said temperature Tg until a mask having a two-dimensional network of substantially straight-edged submillimetric openings, that defines a mask zone known as a network mask zone is obtained, a solid mask zone is formed by a liquid deposition, on the face, of a second masking zone, the solid mask zone being adjacent to and in contact with the network mask zone, and/or at least one cover zone is formed, the cover zone being in contact with the network mask zone, and/or after the drying of the first masking layer, a filled mask zone is formed by filling, via a liquid route, openings of a portion of the network mask zone. The invention also relates to the mask and the electroconductive grid obtained.
摘要翻译： 一种用于制造具有亚毫米开口的掩模的方法，其中：对于掩模层沉积胶体纳米颗粒在第一溶剂中的第一溶液沉积，所述颗粒具有给定的玻璃化转变温度Tg，掩蔽层的干燥，称为 第一掩蔽层在低于所述温度Tg的温度下进行，直到获得限定了称为网络掩模区的掩模区的具有基本上直边的亚毫米开口的二维网络的掩模，固体掩模区 通过在第二掩蔽区域的表面上的液体沉积形成，固体掩模区域与网络掩模区域相邻并且与网络掩模区域接触，和/或形成至少一个覆盖区域，覆盖区域接触 和/或在第一掩蔽层的干燥之后，经由液体路径填充网络掩模区的一部分的开口形成填充的掩模区。 本发明还涉及所获得的掩模和导电栅格。
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4.发明申请公开(公告)号：US20110240343A1
公开(公告)日：2011-10-06
申请号：US13120265
申请日：2009-09-24
CPC分类号： B05D1/322 , B05D1/38 , B05D3/12 , B05D5/00 , C03C17/002 , C03C17/06 , C03C17/23 , C03C2218/328 , C03C2218/34 , H01L51/5203 , H01L51/5206 , H01L51/5209 , H01L2251/5361 , H05K3/048 , Y10T29/49002 , Y10T428/24273
摘要： A process for manufacturing a mask having submillimetric openings, in which: for a masking layer, a solution of colloidal nanoparticles that are stabilized and dispersed in a first solvent is deposited, the particles having a given glass transition temperature Tg, the drying of the masking layer is carried out at a temperature below the temperature Tg until a mask having a two-dimensional network of submillimetric openings is obtained with substantially straight mask area edges, in a zone referred to as a network mask zone, a zone free of masking is formed on the face by mechanical and/or optical removal of at least one peripheral portion of the network mask zone. The invention also relates to the network mask and the grid with an electroconductive solid zone that are thus obtained.
摘要翻译： 制造具有亚毫米开口的掩模的方法，其中：沉积稳定和分散在第一溶剂中的胶体纳米颗粒的掩蔽层，所述颗粒具有给定的玻璃化转变温度Tg，所述掩蔽的干燥 层在低于温度Tg的温度下进行，直到在被称为网络掩模区的区域中获得具有基本上直的掩模区域边缘的具有亚毫米开口的二维网络的掩模，形成无掩蔽的区域 通过机械和/或光学去除网络掩模区域的至少一个周边部分而在表面上。 本发明还涉及由此获得的具有导电固体区的网络掩模和网格。
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5.发明授权Method for manufacturing a mask having submillimetric apertures for a submillimetric electrically conductive grid, mask having submillimetric apertures and submillimetric electrically conductive grid 有权用于制造具有亚毫米级导电栅格的亚毫米孔的掩模的方法，具有亚毫米级孔径和亚毫米级导电栅格的掩模公开(公告)号：US09114425B2
公开(公告)日：2015-08-25
申请号：US13120265
申请日：2009-09-24
IPC分类号： B05D1/32 , H05K3/04 , C03C17/00 , C03C17/06 , C03C17/23 , H01L51/52 , B05D1/38 , B05D3/12 , B05D5/00
CPC分类号： B05D1/322 , B05D1/38 , B05D3/12 , B05D5/00 , C03C17/002 , C03C17/06 , C03C17/23 , C03C2218/328 , C03C2218/34 , H01L51/5203 , H01L51/5206 , H01L51/5209 , H01L2251/5361 , H05K3/048 , Y10T29/49002 , Y10T428/24273
摘要： A process for manufacturing a mask having submillimetric openings, in which: for a masking layer, a solution of colloidal nanoparticles that are stabilized and dispersed in a first solvent is deposited, the particles having a given glass transition temperature Tg, the drying of the masking layer is carried out at a temperature below the temperature Tg until a mask having a two-dimensional network of submillimetric openings is obtained with substantially straight mask area edges, in a zone referred to as a network mask zone, a zone free of masking is formed on the face by mechanical and/or optical removal of at least one peripheral portion of the network mask zone. The invention also relates to the network mask and the grid with an electroconductive solid zone that are thus obtained.
摘要翻译： 制造具有亚毫米开口的掩模的方法，其中：沉积稳定和分散在第一溶剂中的胶体纳米颗粒的掩蔽层，所述颗粒具有给定的玻璃化转变温度Tg，所述掩蔽的干燥 层在低于温度Tg的温度下进行，直到在被称为网络掩模区的区域中获得具有基本上直的掩模区域边缘的具有亚毫米开口的二维网络的掩模，形成无掩蔽的区域 通过机械和/或光学去除网络掩模区域的至少一个周边部分而在表面上。 本发明还涉及由此获得的具有导电固体区的网络掩模和网格。
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6.发明申请METHOD FOR MANUFACTURING A MASK HAVING SUBMILLIMETRIC APERTURES FOR A SUBMILLIMETRIC ELECTRICALLY CONDUCTIVE GRID, AND MASK AND SUBMILLIMETRIC ELECTRICALLY CONDUCTIVE GRID 失效用于制造具有亚微米电导体网格的底层薄膜的掩模的方法，以及掩模和亚微米电导体网格公开(公告)号：US20110250387A1
公开(公告)日：2011-10-13
申请号：US13120292
申请日：2009-09-24
CPC分类号： C03C17/002 , B82Y20/00 , B82Y30/00 , C03C17/06 , C03C17/09 , C03C17/22 , C03C2217/252 , C03C2218/116 , C03C2218/15 , C03C2218/34 , H01L51/5203 , H01L51/56 , H01L2251/5369
摘要： A process for manufacturing a mask having submillimetric openings, in which: for a masking layer, a first solution of colloidal nanoparticles in a first solvent is deposited, the particles having a given glass transition temperature Tg, the drying of the masking layer, known as the first masking layer, is carried out at a temperature below said temperature Tg until a mask having a two-dimensional network of substantially straight-edged submillimetric openings, that defines a mask zone known as a network mask zone is obtained, a solid mask zone is formed by a liquid deposition, on the face, of a second masking zone, the solid mask zone being adjacent to and in contact with the network mask zone, and/or at least one cover zone is formed, the cover zone being in contact with the network mask zone, and/or after the drying of the first masking layer, a filled mask zone is formed by filling, via a liquid route, openings of a portion of the network mask zone. The invention also relates to the mask and the electroconductive grid obtained.
摘要翻译： 一种用于制造具有亚毫米开口的掩模的方法，其中：对于掩模层沉积胶体纳米颗粒在第一溶剂中的第一溶液沉积，所述颗粒具有给定的玻璃化转变温度Tg，掩蔽层的干燥，称为 第一掩蔽层在低于所述温度Tg的温度下进行，直到获得限定了称为网络掩模区的掩模区的具有基本上直边的亚毫米开口的二维网络的掩模，固体掩模区 通过在第二掩蔽区域的表面上的液体沉积形成，固体掩模区域与网络掩模区域相邻并且与网络掩模区域接触，和/或形成至少一个覆盖区域，覆盖区域接触 和/或在第一掩蔽层的干燥之后，经由液体路径填充网络掩模区的一部分的开口形成填充的掩模区。 本发明还涉及所获得的掩模和导电栅格。
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公开(公告)号：US09212090B2
公开(公告)日：2015-12-15
申请号：US13383530
申请日：2010-07-13
CPC分类号： G02B1/18 , B01J21/063 , B01J21/066 , B01J35/004 , B01J37/0244 , B01J37/341 , B01J37/347 , C03C17/3417 , C03C17/3435 , C03C17/3447 , C03C2217/212 , C03C2217/213 , C03C2217/23 , C03C2217/281 , C03C2217/71 , C03C2217/734 , G02B27/0006 , Y10T428/24942
摘要： One subject of the invention is a material comprising a substrate coated on at least one portion of at least one of its faces with a stack comprising a photocatalytic layer, the geometrical thickness of which is between 2 and 30 nm, and at least one pair of respectively high and low refractive index layers positioned underneath said photocatalytic layer so that in the or each pair, the or each high refractive index layer is closest to the substrate, said material being such that the optical thickness, for a wavelength of 350 nm, of the or each high refractive index layer, except the photocatalytic layer, is between 170 and 300 nm and the optical thickness, for a wavelength of 350 nm, of the or each low refractive index layer is between 30 and 90 nm.
摘要翻译： 本发明的一个主题是一种材料，其包括涂覆在其至少一个表面的至少一部分上的基底，该叠层包括光催化层，其几何厚度为2至30nm，以及至少一对 分别位于所述光催化层下面的高和低折射率层，使得在每一对或每对中，高折射率层或每个高折射率层最靠近基板，所述材料使得对于波长为350nm的光学厚度为 除了光催化层之外，每个高折射率层或每个高折射率层在170和300nm之间，并且每个低折射率层的每个低折射率层的光学厚度在350nm的波长为30nm和90nm之间。
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公开(公告)号：US08289607B2
公开(公告)日：2012-10-16
申请号：US12920756
申请日：2009-02-24
IPC分类号： G02F1/15
CPC分类号： G02F1/155 , B32B17/10036 , B32B17/10174 , B32B17/10376 , B32B17/10761 , B32B17/1077
摘要： An electrochromic device, with controlled transparency, for example of electrically controllable type, including between a transparent carrier substrate and a counter-substrate, at least one stack of functional layers, the outermost layers of which include electroconductive layers, the conductivity of at least one electroconductive layer not in contact with the carrier substrate being reinforced by a network of conductive elements in contact with this layer. The network includes a mesh, for which the area of the intermesh free space is substantially between 0.04 mm2 and 0.16 mm2 or in a vicinity of 0.09 mm2.
摘要翻译： 具有可控透明度的电致变色装置，例如电可控型，包括在透明载体基板和对向基板之间，至少一层功能层，其最外层包括导电层，至少一个导电层 不与载体衬底接触的导电层被与该层接触的导电元件的网络增强。 该网络包括网状物，互相间隔空间的面积基本上在0.04mm 2和0.16mm 2之间或0.09mm 2附近。
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公开(公告)号：US08259380B2
公开(公告)日：2012-09-04
申请号：US11915585
申请日：2006-05-22
CPC分类号： B32B17/10174 , B32B17/10036 , B32B17/10513 , B32B17/1077 , G02F1/13439 , G02F1/155
摘要： An electrochemical/electrocontrollable device having variable optical and/or energetic properties, including at least one carrier substrate including an electroactive layer or an electroactive layer stack arranged between a lower electrode and an upper electrode. At least one of the lower or upper electrodes includes at least four layers including at least one metal functional layer having intrinsic electrical conductivity properties, the functional layer being associated with an electrochemical barrier layer of an electrically conductive material transparent in the visible range, the electrochemical barrier layer being associated with a humidity protection layer of an electrically conductive material transparent in the visible range, and the functional layer being associated with a first sublayer of electrically conductive material transparent in the visible range.
摘要翻译： 一种具有可变光学和/或能量特性的电化学/电控制装置，其包括至少一个载体基底，其包括布置在下部电极和上部电极之间的电活性层或电活性层叠层。 下电极或上电极中的至少一个包括至少四层，包括至少一个具有本征导电性质的金属功能层，该功能层与在可见光范围内透明的导电材料的电化学阻挡层相关联，电化学 阻挡层与在可见光范围内透明的导电材料的湿度保护层相关联，并且所述功能层与在可见光范围内透明的导电材料的第一子层相关联。
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公开(公告)号：US20120019889A1
公开(公告)日：2012-01-26
申请号：US12922341
申请日：2010-04-15
申请人： Driss Lamine , Emmanuel Valentin , Samuel Dubrenat
发明人： Driss Lamine , Emmanuel Valentin , Samuel Dubrenat
CPC分类号： G02F1/155 , G02F1/1533 , G02F2001/1557
摘要： The present invention relates to an electrochromic device having at least one active area (CDEF), having, on a carrier substrate (3), a multilayer stack comprising a layer forming a lower electrode (4), various functional layers (7) at least one of which is an electrochromic layer, at least one (6, 7a) of these layers being electrically insulating, and an upper electrode (9), in which device: at least one partition (5) separating the surface of the lower electrode (4) into two isolated regions, namely a free region (4a) and an active region (4b) containing the active area (CDEF); and at least one partition (12) separating the surface of the upper electrode (9) into two regions electrically isolated from each other, namely a free region (9a) and an active region (9b) containing the active area (CDEF).
摘要翻译： 本发明涉及具有至少一个活性区域（CDEF）的电致变色装置，其在载体衬底（3）上具有至少包含形成下电极（4）的层，多个功能层（7）至少 其中一个是电致变色层，这些层中的至少一个（6,7）是电绝缘的，以及上电极（9），其中装置：至少一个分隔下电极表面的隔板（5） 4）分成两个隔离区域，即包含活性区域（CDEF）的自由区域（4a）和有源区域（4b）; 以及将上部电极（9）的表面分离成彼此电隔离的两个区域，即包含有源区域（CDEF）的自由区域（9a）和有源区域（9b）的至少一个隔板（12）。
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