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1.发明授权Methods for running a high density plasma etcher to achieve reduced transistor device damage 有权运行高密度等离子体蚀刻机以减少晶体管器件损坏的方法公开(公告)号：US06255221B1
公开(公告)日：2001-07-03
申请号：US09215020
申请日：1998-12-17
IPC分类号： H01L2102
CPC分类号： H01L21/31116 , Y10S438/91
摘要： Disclosed are methods and systems for etching dielectric layers in a high density plasma etcher. A method includes providing a wafer having a photoresist mask over a dielectric layer in order to define at least one contact via hole or open area that is electrically interconnected down to the silicon substrate of the wafer. The method then proceeds to inserting the wafer into the high density plasma etcher and pulsed application a TCP power source of the high density plasma etcher. The pulsed application includes ascertaining a desired etch performance characteristic, which includes photoresist selectivity and etch rate which is associated with a continuous wave application of the TCP source. Then, selecting a duty cycle of the pulsed application of the TCP source and scaling a peak power of the pulsed application of the TCP source in order to match a cycle-averaged power that would be delivered by the continuous wave application of the TCP source. The pulsed application of the TCP power source is configured to etch through the dielectric layer to at least one contact via hole or open area while substantially reducing damage to the transistor gate oxides of the transistor devices.
摘要翻译： 公开了用于在高密度等离子体蚀刻器中蚀刻电介质层的方法和系统。 一种方法包括在电介质层上提供具有光致抗蚀剂掩模的晶片，以便限定至少一个电连接到晶片的硅衬底的接触通孔或开放区域。 然后，该方法进行将晶片插入高密度等离子体蚀刻器中，并脉冲施加高密度等离子体蚀刻器的TCP电源。 脉冲应用包括确定期望的蚀刻性能特性，其包括与TCP源的连续波应用相关联的光致抗蚀剂选择性和蚀刻速率。 然后，选择TCP源的脉冲应用的占空比，并且缩放TCP源的脉冲应用的峰值功率，以便匹配由TCP源的连续波应用传递的周期平均功率。 TCP电源的脉冲施加被配置为通过介电层蚀刻到至少一个接触通孔或开放区域，同时基本上减少对晶体管器件的晶体管栅极氧化物的损害。
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2.发明授权Methods and apparatus for determining an etch endpoint in a plasma processing system 有权用于确定等离子体处理系统中的蚀刻端点的方法和装置公开(公告)号：US06562187B2
公开(公告)日：2003-05-13
申请号：US09792376
申请日：2001-02-23
IPC分类号： H05H100
CPC分类号： H01L22/26 , H01J37/32935 , H01J37/32963
摘要： Methods and apparatus for ascertaining the end of an etch process while etching through a target layer on a substrate in a plasma processing system which employs an electrostatic chuck. The end of the etch process is ascertained by monitoring the electric potential of the substrate to detect a pattern indicative of the end of the etch process. By the way of example, changes to this potential may be observed by monitoring the current flowing to the pole of the electrostatic chuck. Upon ascertaining the pattern indicative of the end of the etch process, for example by monitoring the current signal, a control signal is produced to terminate the etch. If a bias compensation power supply is provided to keep the currents flowing to the poles of the electrostatic chuck substantially equal but opposite in sign throughout the etch, the compensation voltage output by the bias compensation power supply may be monitored for the aforementioned pattern indicative of the end of the etch process in order to terminate the etch.
摘要翻译： 在使用静电卡盘的等离子体处理系统中蚀刻通过基板上的目标层时确定蚀刻工艺结束的方法和装置。 通过监测衬底的电位以检测指示蚀刻工艺结束的图案来确定蚀刻工艺的结束。 作为示例，通过监测流向静电卡盘的极点的电流可以观察到对该电位的变化。 在确定表示蚀刻工艺结束的图案时，例如通过监视当前信号，产生控制信号以终止蚀刻。 如果提供偏置补偿电源以在整个蚀刻期间保持流过静电卡盘的磁极的电流基本上相等但相反，则可以监视由偏置补偿电源输出的补偿电压，以指示上述模式， 结束蚀刻工艺以终止蚀刻。
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3.发明授权Methods and apparatus for determining an etch endpoint in a plasma processing system 有权用于确定等离子体处理系统中的蚀刻端点的方法和装置公开(公告)号：US06228278B1
公开(公告)日：2001-05-08
申请号：US09164389
申请日：1998-09-30
IPC分类号： G01R3100
CPC分类号： H01L22/26 , H01J37/32935 , H01J37/32963
摘要： Methods and apparatus for ascertaining the end of an etch process while etching through a target layer on a substrate in a plasma processing system which employs an electrostatic chuck. The end of the etch process is ascertained by monitoring the electric potential of the substrate to detect a pattern indicative of the end of the etch process. By the way of example, changes to this potential may be observed by monitoring the current flowing to the pole of the electrostatic chuck. Upon ascertaining the pattern indicative of the end of the etch process, for example by monitoring the current signal, a control signal is produced to terminate the etch. If a bias compensation power supply is provided to keep the currents flowing to the poles of the electrostatic chuck substantially equal but opposite in sign throughout the etch, the compensation voltage output by the bias compensation power supply may be monitored for the aforementioned pattern indicative of the end of the etch process in order to terminate the etch.
摘要翻译： 在使用静电卡盘的等离子体处理系统中蚀刻通过基板上的目标层时确定蚀刻工艺结束的方法和装置。 通过监测衬底的电位以检测指示蚀刻工艺结束的图案来确定蚀刻工艺的结束。 作为示例，通过监测流向静电卡盘的极点的电流可以观察到对该电位的变化。 在确定表示蚀刻工艺结束的图案时，例如通过监视当前信号，产生控制信号以终止蚀刻。 如果提供偏置补偿电源以在整个蚀刻期间保持流过静电卡盘的磁极的电流基本上相等但相反，则可以监视由偏置补偿电源输出的补偿电压，以指示上述模式， 结束蚀刻工艺以终止蚀刻。
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4.发明授权Photoresist stripping chamber and methods of etching photoresist on substrates 有权光刻胶剥离室和在基材上蚀刻光致抗蚀剂的方法公开(公告)号：US07605063B2
公开(公告)日：2009-10-20
申请号：US11431104
申请日：2006-05-10
CPC分类号： H01L21/31138 , H01J37/321 , H01J2237/3342
摘要： Methods of processing a substrate so as to protect an active area include positioning a substrate in an inductively coupled plasma processing chamber, supplying process gas to the chamber, generating plasma from the process gas and processing the substrate so as to protect the active area by maintaining a plasma potential of about 5 to 15 volts at the substrate surface and/or passivating the active area by using a siliane-free process gas including at least one additive effective to form a protective layer on the active area of the substrate wherein the protective layer includes at least one element from the additive which is already present in the active area.
摘要翻译： 处理衬底以保护有源区域的方法包括将衬底定位在电感耦合等离子体处理室中，将工艺气体供应到腔室，从处理气体产生等离子体并处理衬底，以通过保持来保护有源区域 在衬底表面上具有约5至15伏特的等离子体电位和/或通过使用包含至少一种在衬底的有源区上形成保护层的至少一种添加剂的无硅衬底工艺气体来钝化活性区域，其中保护层 包括已经存在于活性区域中的来自添加剂的至少一种元素。
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公开(公告)号：US07542134B2
公开(公告)日：2009-06-02
申请号：US12131909
申请日：2008-06-02
申请人： Aleksander Owczarz , Jaroslaw W. Winniczek , Luai Nasser , Alan Schoepp , Fred C. Redeker , Erik Edelberg
发明人： Aleksander Owczarz , Jaroslaw W. Winniczek , Luai Nasser , Alan Schoepp , Fred C. Redeker , Erik Edelberg
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N2021/8822
摘要： A system for inspecting a substrate includes a camera and a light source. The camera is oriented toward a field of view. The field of view encompasses at least a first portion of a first surface of the substrate. The light source is oriented toward the field of view at a first angle β relative to the first surface of the substrate. A method for inspecting a substrate is also included.
摘要翻译： 用于检查基板的系统包括照相机和光源。 相机朝向视场。 该视场包括该基板的第一表面的至少第一部分。 光源相对于衬底的第一表面以第一角度β朝向视场定向。 也包括检查基板的方法。
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公开(公告)号：US20080273195A1
公开(公告)日：2008-11-06
申请号：US12131909
申请日：2008-06-02
申请人： Aleksander Owczarz , Jaroslaw W. Winniczek , Luai Nasser , Alan Schoepp , Fred C. Redeker , Erik Edelberg
发明人： Aleksander Owczarz , Jaroslaw W. Winniczek , Luai Nasser , Alan Schoepp , Fred C. Redeker , Erik Edelberg
CPC分类号： G01N21/9501 , G01N2021/8822
摘要： A system for inspecting a substrate includes a camera and a light source. The camera is oriented toward a field of view. The field of view encompasses at least a first portion of a first surface of the substrate. The light source is oriented toward the field of view at a first angle β relative to the first surface of the substrate. A method for inspecting a substrate is also included.
摘要翻译： 用于检查基板的系统包括照相机和光源。 相机朝向视场。 该视场包括该基板的第一表面的至少第一部分。 光源相对于衬底的第一表面以第一角度β朝向视场定向。 也包括检查基板的方法。
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公开(公告)号：US08173547B2
公开(公告)日：2012-05-08
申请号：US12257210
申请日：2008-10-23
IPC分类号： H01L21/311
CPC分类号： H01L21/32137 , H01J37/32082 , H01L21/3065
摘要： A method and apparatus for etching a silicon layer through a patterned mask formed thereon are provided. The silicon layer is placed in an etch chamber. An etch gas comprising a fluorine containing gas and an oxygen and hydrogen containing gas is provided into the etch chamber. A plasma is generated from the etch gas and features are etched into the silicon layer using the plasma. The etch gas is then stopped. The plasma may contain OH radicals.
摘要翻译： 提供了通过形成在其上的图案化掩模来蚀刻硅层的方法和装置。 将硅层放置在蚀刻室中。 包括含氟气体和含氧和氢气的气体的蚀刻气体被提供到蚀刻室中。 从蚀刻气体产生等离子体，并且使用等离子体将特征蚀刻到硅层中。 然后停止蚀刻气体。 等离子体可能含有OH自由基。
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公开(公告)号：US08043434B2
公开(公告)日：2011-10-25
申请号：US12257216
申请日：2008-10-23
IPC分类号： B08B7/00
CPC分类号： H01L21/31138 , G03F7/427 , H01J37/321 , H01J37/32357 , H01J37/3244 , H01J37/32449
摘要： A method and apparatus remove photoresist from a wafer. A process gas containing sulfur (S), oxygen (O), and hydrogen (H) is provided, and a plasma is generated from the process gas in a first chamber. A radical-rich ion-poor reaction medium is flown from the first chamber to a second chamber where the wafer is placed. The patterned photoresist layer on the wafer is removed using the reaction medium, and then the reaction medium flowing into the second chamber is stopped. Water vapor may be introduced in a salvation zone provided in a passage of the reaction medium flowing down from the plasma such that the water vapor solvates the reaction medium to form solvated clusters of species before the reaction medium reaches the wafer. The photoresist is removed using the solvated reaction medium.
摘要翻译： 一种方法和设备从晶片上去除光致抗蚀剂。 提供含有硫（S），氧（O）和氢（H）的工艺气体，并且在第一室中从处理气体产生等离子体。 富含自由基的离子不良反应介质从第一室流到放置晶片的第二室。 使用反应介质去除晶片上的图案化光致抗蚀剂层，然后停止流入第二室的反应介质。 水蒸汽可以被引入设置在从等离子体向下流动的反应介质的通道中的救生区，使得水蒸气溶解反应介质以在反应介质到达晶片之前形成溶剂化的物质簇。 使用溶剂化反应介质去除光致抗蚀剂。
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公开(公告)号：US20100105209A1
公开(公告)日：2010-04-29
申请号：US12257210
申请日：2008-10-23
IPC分类号： H01L21/3065
CPC分类号： H01L21/32137 , H01J37/32082 , H01L21/3065
摘要： A method and apparatus for etching a silicon layer through a patterned mask formed thereon are provided. The silicon layer is placed in an etch chamber. An etch gas comprising a fluorine containing gas and an oxygen and hydrogen containing gas is provided into the etch chamber. A plasma is generated from the etch gas and features are etched into the silicon layer using the plasma. The etch gas is then stopped. The plasma may contain OH radicals.
摘要翻译： 提供了通过形成在其上的图案化掩模来蚀刻硅层的方法和装置。 将硅层放置在蚀刻室中。 包括含氟气体和含氧和氢气的气体的蚀刻气体被提供到蚀刻室中。 从蚀刻气体产生等离子体，并且使用等离子体将特征蚀刻到硅层中。 然后停止蚀刻气体。 等离子体可能含有OH自由基。
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公开(公告)号：US06489245B1
公开(公告)日：2002-12-03
申请号：US09610303
申请日：2000-07-05
IPC分类号： H01L21302
CPC分类号： H01J37/32623 , H01J37/32706
摘要： A method for reducing erosion of a mask while etching a feature in a first layer underlying the mask is disclosed. The first layer is disposed on a substrate, with the substrate being positioned on a chuck within in a plasma processing chamber. The method includes flowing an etchant source gas into the plasma processing chamber and forming a plasma from the etchant source gas. The method further includes pulsing an RF power source at a predefined pulse frequency to provide pulsed RF power to the chuck. The pulsed RF power has a first frequency and alternates between a high power cycle and a low power cycle at the pulse frequency. The pulse frequency is selected to be sufficiently low to cause polymer to be deposited on the mask during the low power cycle.
摘要翻译： 公开了一种在蚀刻掩模下面的第一层中的特征时减少掩模侵蚀的方法。 第一层设置在基板上，其中基板位于等离子体处理室内的卡盘上。 该方法包括将蚀刻剂源气体流入等离子体处理室并从蚀刻剂源气体形成等离子体。 该方法还包括以预定的脉冲频率脉冲地将RF功率脉冲给卡盘提供脉冲的RF功率。 脉冲RF功率具有第一频率，并且在脉冲频率下在高功率周期和低功率周期之间交替。 选择脉冲频率足够低以在低功率循环期间使聚合物沉积在掩模上。
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