Locking mechanisms for fixation devices and methods of engaging tissue

    公开(公告)号:US20060020275A1

    公开(公告)日:2006-01-26

    申请号:US11130818

    申请日:2005-05-16

    IPC分类号: A61B17/08

    摘要: Devices, systems and methods are provided for tissue approximation and repair at treatment sites. In particular, fixation devices are provided comprising a pair of elements each having a first end, a free end opposite the first end, and an engagement surface therebetween for engaging the tissue, the first ends being moveable between an open position wherein the free ends are spaced apart and a closed position wherein the free ends are closer together with the engagement surfaces generally facing each other. The fixation devices also include a locking mechanism coupled to the elements for locking the elements in place. The devices, systems and methods of the invention will find use in a variety of therapeutic procedures, including endovascular, minimally-invasive, and open surgical procedures, and can be used in various anatomical regions, including the abdomen, thorax, cardiovascular system, heart, intestinal tract, stomach, urinary tract, bladder, lung, and other organs, vessels, and tissues. The invention is particularly useful in those procedures requiring minimally-invasive or endovascular access to remote tissue locations, where the instruments utilized must negotiate long, narrow, and tortuous pathways to the treatment site.

    Thin film field effect transistors having Schottky gate-channel junctions
    4.
    发明授权
    Thin film field effect transistors having Schottky gate-channel junctions 失效
    具有肖特基栅极 - 沟道结的薄膜场效应晶体管

    公开(公告)号:US07649217B2

    公开(公告)日:2010-01-19

    申请号:US11909715

    申请日:2006-03-24

    IPC分类号: H01L29/80

    CPC分类号: H01L51/0508 H01L29/812

    摘要: An active electronic device has drain and source electrodes that make ohmic conduct with a layer of a semiconductor. The semiconductor layer may be a thin layer of an organic or amorphous semiconductor. The drain and source electrodes are on a first face of the layer of semiconductor at locations that are spaced apart on either side of a channel. The device has a gate electrode on a second face of the layer of semiconductor adjacent to the channel. The gate electrode makes a Schottky contact with the semiconductor to produce a depletion region in the channel. The gate electrode may encapsulate the channel so that the channel is protected from contact with oxygen, water molecules or other materials in the environment. In some embodiments, the device has an additional gate electrode separated from the semiconductor layer by an insulating layer. Such embodiments combine features of OFETs and MESFETs.

    摘要翻译: 有源电子器件具有通过半导体层形成欧姆导体的漏极和源极。 半导体层可以是有机或非晶半导体的薄层。 漏极和源电极位于半导体层的第一面上,在沟道的任一侧间隔开。 器件在与沟道相邻的半导体层的第二面上具有栅电极。 栅电极与半导体形成肖特基接触,以在沟道中产生耗尽区。 栅电极可以封装通道,使得通道被保护以免与氧气,水分子或环境中的其它材料接触。 在一些实施例中,器件具有通过绝缘层与半导体层分离的附加栅电极。 这样的实施例组合OFET和MESFET的特征。

    Thin Film Field Effect Transistors Having Schottky Gate-Channel Junctions
    5.
    发明申请
    Thin Film Field Effect Transistors Having Schottky Gate-Channel Junctions 失效
    具有肖特基栅极通道结的薄膜场效应晶体管

    公开(公告)号:US20080258137A1

    公开(公告)日:2008-10-23

    申请号:US11909715

    申请日:2006-03-24

    IPC分类号: H01L51/00

    CPC分类号: H01L51/0508 H01L29/812

    摘要: An active electronic device has drain and source electrodes that make ohmic conduct with a layer of a semiconductor. The semiconductor layer may be a thin layer of an organic or amorphous semiconductor. The drain and source electrodes are on a first face of the layer of semiconductor at locations that are spaced apart on either side of a channel. The device has a gate electrode on a second face of the layer of semiconductor adjacent to the channel. The gate electrode makes a Schottky contact with the semiconductor to produce a depletion region in the channel. The gate electrode may encapsulate the channel so that the channel is protected from contact with oxygen, water molecules or other materials in the environment. In some embodiments, the device has an additional gate electrode separated from the semiconductor layer by an insulating layer. Such embodiments combine features of OFETs and MESFETs.

    摘要翻译: 有源电子器件具有通过半导体层形成欧姆导体的漏极和源极。 半导体层可以是有机或非晶半导体的薄层。 漏极和源电极位于半导体层的第一面上,在沟道的任一侧间隔开。 器件在与沟道相邻的半导体层的第二面上具有栅电极。 栅电极与半导体形成肖特基接触,以在沟道中产生耗尽区。 栅电极可以封装通道,使得通道被保护以免与氧气,水分子或环境中的其它材料接触。 在一些实施例中,器件具有通过绝缘层与半导体层分离的附加栅电极。 这样的实施例组合OFET和MESFET的特征。

    High Power-to-Mass Ratio Actuator
    7.
    发明申请
    High Power-to-Mass Ratio Actuator 有权
    高功率到质量比的致动器

    公开(公告)号:US20070262677A1

    公开(公告)日:2007-11-15

    申请号:US11781526

    申请日:2007-07-23

    IPC分类号: H01L41/08 H02N2/00

    摘要: A method for driving an actuator. The method includes applying an electrical potential across an electrostrictive material relative to a counterelectrode disposed within an electrolyte, thereby creating a double layer potential across a region of enhanced ionic concentration. A current flowing between the electorostrictive material and the counterelectrode is measured. A portion of the applied potential appearing across the electrolyte and counterelectrode is calculated and subtracted from the applied potential to obtain an estimated double layer potential. The applied electrical potential is adjusted to obtain a specified double layer potential.

    摘要翻译: 一种用于驱动致动器的方法。 该方法包括相对于设置在电解质内的反电极施加横跨电致伸缩材料的电势,由此在增强的离子浓度区域上产生双层电位。 测量在电致伸缩材料和反电极之间流动的电流。 计算出在电解质和对电极两端出现的施加电位的一部分,并从施加电位中减去得到估计的双层电位。 调整所施加的电位以获得规定的双层电位。

    Molecular actuators, and methods of use thereof
    8.
    发明申请
    Molecular actuators, and methods of use thereof 有权
    分子致动器及其使用方法

    公开(公告)号:US20070215839A1

    公开(公告)日:2007-09-20

    申请号:US11603314

    申请日:2006-11-21

    IPC分类号: H01B1/00 C07D495/00

    摘要: The synthesis of thiophene based conducting polymer molecular actuators, exhibiting electrically triggered molecular conformational transitions is reported. Actuation is believed to be the result of conformational rearrangement of the polymer backbone at the molecular level, not simply ion intercalation in the bulk polymer chain upon electrochemical activation. Molecular actuation results from π-π stacking of thiophene oligomers upon oxidation, producing a reversible molecular displacement that leads to surprising material properties, such as electrically controllable porosity and large strains. The existence of active molecular conformational changes is supported by in situ electrochemical data. Single molecule techniques have been used to characterize the molecular actuators.

    摘要翻译: 报道了噻吩基导电聚合物分子致动器的合成,显示出电触发的分子构象转变。 认为激发是聚合物骨架在分子水平上的构象重排的结果,而不是简单地在电化学活化时主体聚合物链中的离子嵌入。 分子致动由氧化后噻吩低聚物的pi-pi堆叠产生,产生可逆的分子位移,导致令人惊奇的材料性质,例如电可控孔隙率和大应变。 活性分子构象变化的存在由原位电化学数据支持。 已经使用单分子技术来表征分子致动器。

    Method of manufacture of polymer transistors with controllable gap
    9.
    发明授权
    Method of manufacture of polymer transistors with controllable gap 有权
    具有可控间隙的聚合物晶体管的制造方法

    公开(公告)号:US06207034B1

    公开(公告)日:2001-03-27

    申请号:US09204929

    申请日:1998-12-03

    IPC分类号: C25D502

    摘要: A method of manufacturing a polymer transistor having a controllable gap is provided in an embodiment. In the embodiment, a conducting tip is positioned proximate to a conducting surface so as to form a gap, an electrochemical medium is introduced in contact with the conducting tip and the conducting surface, and an electrical potential is applied across the electrochemical medium so as to deposit a conductive polymer that electrically bridges the formed gap. In another embodiment, a counter electrode is provided in the electrochemical solution, facilitating processing in which the electrochemical potential at the conducting tip and at the conducting surface are the same and there is a return path for electrical current through the counter electrode. Repositioning of the tip during and after polymer deposition provides, in a further embodiment, adds additional capability with respect to gap control and polymer properties.

    摘要翻译: 在一个实施例中提供了制造具有可控间隙的聚合物晶体管的方法。 在该实施例中,导电尖端靠近导电表面定位,以便形成间隙,电化学介质被引入与导电尖端和导电表面接触,并且跨越电化学介质施加电势,从而 沉积电导电形成的间隙的导电聚合物。 在另一个实施例中,在电化学溶液中提供对电极,促进了在导电尖端和导电表面处的电化学电位相同的处理,并且存在通过对电极的电流的返回路径。 在另一个实施方案中,在聚合物沉积期间和之后,尖端的重新定位提供了关于间隙控制和聚合物性质的额外的能力。

    Container for newspapers
    10.
    发明授权
    Container for newspapers 失效
    报纸集装箱

    公开(公告)号:US5086940A

    公开(公告)日:1992-02-11

    申请号:US740112

    申请日:1991-08-05

    IPC分类号: A47G29/12

    CPC分类号: A47G29/1203 Y10S206/807

    摘要: A simple, inexpensive storage container for newspapers and the like is described for attachment to an apartment door or the like, such that papers can be inserted from the top but cannot be removed until the door is opened so as to expose an open side of the container. The container is secured in tamper proof manner by adhesive or simple slot and screw means.

    摘要翻译: 描述了一种用于报纸等的简单便宜的储存容器,用于附接到公寓门等,使得纸可以从顶部插入,但是不能移除,直到门被打开以露出开口侧 容器。 容器通过粘合剂或简单的槽和螺丝装置以防篡改的方式固定。