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    Waveguide including a plurality of waveguide segments
    1.
    发明授权
    Waveguide including a plurality of waveguide segments 失效
    波导包括多个波导段

    公开(公告)号：US07146081B2

    公开(公告)日：2006-12-05

    申请号：US11178657

    申请日：2005-07-08

    申请人： Ernest Wayne Balch ,  Leonard Richard Douglas ,  Min-Yi Shih

    发明人： Ernest Wayne Balch ,  Leonard Richard Douglas ,  Min-Yi Shih

    IPC分类号： G02B6/26 ,  G02B6/02

    CPC分类号： G02B6/1228 ,  G02B6/12004 ,  G02B6/138 ,  G02B6/4228 ,  G02B6/43

    摘要： A method for adaptively fabricating a waveguide comprises: measuring misplacement of a photonic device relative to a substrate; generating computer readable instructions for using a plurality of graphics primitives to form the waveguide; and photocomposing the waveguide on the substrate in accordance with the computer readable instructions. A reticle comprises a plurality of graphics primitives with at least one of the plurality of graphics primitives comprising a tapered end. A waveguide comprises a plurality of waveguide segments with each of the plurality of waveguide segments comprising a tapered end and being adjacent to at least one other of the plurality of waveguide segments.

    摘要翻译： 用于自适应地制造波导的方法包括：测量光子器件相对于衬底的错位; 生成用于使用多个图形基元形成所述波导的计算机可读指令; 并根据计算机可读指令将基片上的波导照相。 标线板包括多个图形基元，其中所述多个图形基元中的至少一个包括渐缩端。 波导包括多个波导段，其中多个波导段中的每一个包括锥形端并与多个波导区段中的至少另一个相邻。

    Method and apparatus for fabricating waveguides and waveguides fabricated therefrom
    2.
    发明授权
    Method and apparatus for fabricating waveguides and waveguides fabricated therefrom 失效
    用于制造由其制造的波导和波导的方法和装置

    公开(公告)号：US06957007B2

    公开(公告)日：2005-10-18

    申请号：US10064581

    申请日：2002-07-29

    申请人： Ernest Wayne Balch ,  Leonard Richard Douglas ,  Min-Yi Shih

    发明人： Ernest Wayne Balch ,  Leonard Richard Douglas ,  Min-Yi Shih

    IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  G02B6/138 ,  G02B6/42 ,  G02B6/43 ,  G02B6/00 ,  G03C5/00 ,  G06F19/00

    CPC分类号： G02B6/1228 ,  G02B6/12004 ,  G02B6/138 ,  G02B6/4228 ,  G02B6/43

    摘要： A method for adaptively fabricating a waveguide comprises: measuring misplacement of a photonic device relative to a substrate; generating computer readable instructions for using a plurality of graphics primitives to form the waveguide; and photocomposing the waveguide on the substrate in accordance with the computer readable instructions. A reticle comprises a plurality of graphics primitives with at least one of the plurality of graphics primitives comprising a tapered end. A waveguide comprises a plurality of waveguide segments with each of the plurality of waveguide segments comprising a tapered end and being adjacent to at least one other of the plurality of waveguide segments.

    摘要翻译： 用于自适应地制造波导的方法包括：测量光子器件相对于衬底的错位; 生成用于使用多个图形基元形成所述波导的计算机可读指令; 并根据计算机可读指令将基片上的波导照相。 标线板包括多个图形基元，其中所述多个图形基元中的至少一个包括渐缩端。 波导包括多个波导段，其中多个波导段中的每一个包括锥形端并与多个波导区段中的至少另一个相邻。

    Method for fabricating a thin film inductor
    5.
    发明授权
    Method for fabricating a thin film inductor 有权
    薄膜电感器的制造方法

    公开(公告)号：US6040226A

    公开(公告)日：2000-03-21

    申请号：US177908

    申请日：1998-10-23

    申请人： Robert John Wojnarowski ,  James Wilson Rose ,  Ernest Wayne Balch ,  Leonard Richard Douglas ,  Evan Taylor Downey ,  Michael Gdula

    发明人： Robert John Wojnarowski ,  James Wilson Rose ,  Ernest Wayne Balch ,  Leonard Richard Douglas ,  Evan Taylor Downey ,  Michael Gdula

    IPC分类号： H01L21/20

    CPC分类号： H01L21/20

    摘要： A method is provided for the manufacture of precision electronic components such as resistors, inductors, and capacitors on a polymer or ceramic surface. The electronic components can be deposited and trimmed to precise or matched values without having precise depositions of all of the pre-patterned materials. Thin film electronic components are deposited on a surface, parameter values are measured or estimated, a correction offset file is generated, and the components are trimmed using adaptive lithography to a very close tolerance. A computer program can be used to enable the adjustment of electronic components by techniques such as changing the physical length of an inductor coil or resistor lead, or by changing a capacitor plate area.

    摘要翻译： 提供了一种用于在聚合物或陶瓷表面上制造诸如电阻器，电感器和电容器的精密电子部件的方法。 电子部件可以沉积和修整成精确或匹配的值，而不会精确沉积所有预图案化材料。 薄膜电子部件沉积在表面上，测量或估计参数值，产生校正偏移文件，并且使用适应光刻将组件修剪到非常接近的公差。 可以使用计算机程序来实现电子部件的调整，例如改变电感线圈或电阻器引线的物理长度，或者改变电容器板面积。

    High temperature circuit apparatus
    6.
    发明授权
    High temperature circuit apparatus 失效

    公开(公告)号：US06603145B2

    公开(公告)日：2003-08-05

    申请号：US10136626

    申请日：2002-05-02

    申请人： Robert John Wojnarowski ,  Ernest Wayne Balch ,  Leonard Richard Douglas

    发明人： Robert John Wojnarowski ,  Ernest Wayne Balch ,  Leonard Richard Douglas

    IPC分类号： H01L310312

    CPC分类号： H01L22/20 ,  H01L23/34 ,  H01L2224/92144 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/00

    摘要： A method for interconnecting high-temperature silicon carbide (SiC) devices enables such high-temperature devices to be used in fabricating electronic circuits of significant scale. This method comprises empirically measuring operational characteristics of a plurality of the devices to be interconnected, the operational characteristics comprising devices which are measured to be non-working and devices which are measured to be working; characterizing the operational characteristics in an operational characteristics map; designing interconnection paths between and among the devices that are characterized to be working by the operational characteristics map; and excluding from the interconnection paths, devices that are characterized to be non-working by the operational characteristics map. A preferred embodiment of this method further includes disposing a temporary polymer layer over the devices; forming via holes through the temporary polymer layer, to bonding pads of the devices; applying a current-balancing resistive metal over the temporary polymer layer; establishing connections between the current-balancing resistive metal and the bonding pads; designing the interconnection paths between and among the working devices by patterning the current-balancing resistive metal based on the operational characteristics map; and removing the temporary polymer layer.

    Silicon carbide large area device fabrication apparatus and method
    9.
    发明授权
    Silicon carbide large area device fabrication apparatus and method 失效
    碳化硅大面积器件制造装置及方法

    公开(公告)号：US06410356B1

    公开(公告)日：2002-06-25

    申请号：US09520751

    申请日：2000-03-07

    申请人： Robert John Wojnarowski ,  Ernest Wayne Balch ,  Leonard Richard Douglas

    发明人： Robert John Wojnarowski ,  Ernest Wayne Balch ,  Leonard Richard Douglas

    IPC分类号： H01L2166

    CPC分类号： H01L22/20 ,  H01L23/34 ,  H01L2224/92144 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/00

    摘要： A method for interconnecting high-temperature silicon carbide (SiC) devices enables such high-temperature devices to be used in fabricating electronic circuits of significant scale. This method comprises empirically measuring operational characteristics of a plurality of the devices to be interconnected, the operational characteristics comprising devices which are measured to be non-working and devices which are measured to be working; characterizing the operational characteristics in an operational characteristics map; designing interconnection paths between and among the devices that are characterized to be working by the operational characteristics map; and excluding from the interconnection paths, devices that are characterized to be non-working by the operational characteristics map. A preferred embodiment of this method further includes disposing a temporary polymer layer over the devices; forming via holes through the temporary polymer layer, to bonding pads of the devices; applying a current-balancing resistive metal over the temporary polymer layer; establishing connections between the current-balancing resistive metal and the bonding pads; designing the interconnection paths between and among the working devices by patterning the current-balancing resistive metal based on the operational characteristics map; and removing the temporary polymer layer.

    摘要翻译： 用于互连高温碳化硅（SiC）器件的方法使得这种高温器件能够用于制造具有显着规模的电子电路。 该方法包括经验地测量待互连的多个设备的操作特性，操作特性包括被测量为不工作的设备和被测量为工作的设备; 表征操作特征图中的操作特性; 设计特征在于通过操作特征图工作的设备之间的互连路径; 并且从互连路径中排除特征在于通过操作特性图不工作的设备。 该方法的优选实施例还包括在器件上设置临时聚合物层; 通过所述临时聚合物层形成通孔到所述装置的焊盘; 在临时聚合物层上施加电流平衡电阻金属; 建立电流平衡电阻金属和焊盘之间的连接; 通过基于操作特性图构图电流平衡电阻金属来设计工作装置之间和之间的互连路径; 并除去临时聚合物层。

    HDI chip attachment method for reduced processing
    10.
    发明授权
    HDI chip attachment method for reduced processing 有权
    HDI芯片附件方法减少处理

    公开(公告)号：US06284564B1

    公开(公告)日：2001-09-04

    申请号：US09399461

    申请日：1999-09-20

    申请人： Ernest Wayne Balch ,  Leonard Richard Douglas ,  Thomas Bert Gorczyca

    发明人： Ernest Wayne Balch ,  Leonard Richard Douglas ,  Thomas Bert Gorczyca

    IPC分类号： H01L2144

    CPC分类号： H01L24/76 ,  H01L21/67138 ,  H01L24/24 ,  H01L24/82 ,  H01L24/86 ,  H01L2224/24225 ,  H01L2224/82039 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01058

    摘要： A method according to an aspect of the invention, for interconnecting electrical contacts or electrodes (230be) of semiconductor chips (230a, 230b, 230c) in an HDI context, includes the step of applying laser energy to make a pattern of apertures through a dielectric film which corresponds to the ideal locations of electrodes of semiconductor chips properly placed on the film. This may be accomplished, in one mode of the method, by procuring an optical mask (20) defining an ideal pattern of electrodes of semiconductor chips properly aligned in an HDI structure. This mask may be sufficiently large to cover a plurality of HDI circuits being made on a substrate, or it may cover only one such HDI circuit. Laser energy (30) is applied to a dielectric film (10; 10, 17) through apertures or transparent regions (22) of the mask, to thereby make the ideal pattern of holes in the film. Semiconductor chips (230a, 230b, 230c) are mounted to a first side (10ls, 17ls) of the dielectric film, as by means of adhesive, with the electrodes (230be) in registry with the corresponding ones of the holes (22). This has the effect of mounting the semiconductor chips (230a, 230b, 230c) in their ideal locations. Electrically conductive material (310), such as metallization, is applied to a second side (10us) of the film (10) and to at least the sides of the holes (42a, 42b), so as to interconnect the electrodes (230be) with an interconnect pattern (320) of the electrically conductive material (310).

    摘要翻译： 根据本发明的一个方面，用于使HDI环境中的半导体芯片（230a，230b，230c）的电接触或电极（230be）互连的方法包括施加激光能量以通过电介质形成孔径图案的步骤 膜对应于半导体芯片的适当放置在膜上的电极的理想位置。 这可以在该方法的一种模式中通过采购限定在HDI结构中正确对准的半导体芯片的理想电极图案的光学掩模（20）来实现。 该掩模可能足够大以覆盖在衬底上制造的多个HDI电路，或者它可以仅覆盖一个这样的HDI电路。 通过掩模的孔或透明区域（22）将激光能量（30）施加到电介质膜（10; 10,17）上，从而在膜中形成理想的孔图案。 半导体芯片（230a，230b，230c）通过粘合剂安装到电介质膜的第一侧（10l，17ls）上，电极（230be）与对应的孔（22）对准。 这具有将半导体芯片（230a，230b，230c）安装在其理想位置的效果。 诸如金属化的导电材料（310）被施加到膜（10）的第二侧（10us）并且至少在孔（42a，42b）的侧面上，以将电极（230be） 具有导电材料（310）的互连图案（320）。