Silicon carbide large area device fabrication apparatus and method
    4.
    发明授权
    Silicon carbide large area device fabrication apparatus and method 失效
    碳化硅大面积器件制造装置及方法

    公开(公告)号:US06410356B1

    公开(公告)日:2002-06-25

    申请号:US09520751

    申请日:2000-03-07

    IPC分类号: H01L2166

    摘要: A method for interconnecting high-temperature silicon carbide (SiC) devices enables such high-temperature devices to be used in fabricating electronic circuits of significant scale. This method comprises empirically measuring operational characteristics of a plurality of the devices to be interconnected, the operational characteristics comprising devices which are measured to be non-working and devices which are measured to be working; characterizing the operational characteristics in an operational characteristics map; designing interconnection paths between and among the devices that are characterized to be working by the operational characteristics map; and excluding from the interconnection paths, devices that are characterized to be non-working by the operational characteristics map. A preferred embodiment of this method further includes disposing a temporary polymer layer over the devices; forming via holes through the temporary polymer layer, to bonding pads of the devices; applying a current-balancing resistive metal over the temporary polymer layer; establishing connections between the current-balancing resistive metal and the bonding pads; designing the interconnection paths between and among the working devices by patterning the current-balancing resistive metal based on the operational characteristics map; and removing the temporary polymer layer.

    摘要翻译: 用于互连高温碳化硅(SiC)器件的方法使得这种高温器件能够用于制造具有显着规模的电子电路。 该方法包括经验地测量待互连的多个设备的操作特性,操作特性包括被测量为不工作的设备和被测量为工作的设备; 表征操作特征图中的操作特性; 设计特征在于通过操作特征图工作的设备之间的互连路径; 并且从互连路径中排除特征在于通过操作特性图不工作的设备。 该方法的优选实施例还包括在器件上设置临时聚合物层; 通过所述临时聚合物层形成通孔到所述装置的焊盘; 在临时聚合物层上施加电流平衡电阻金属; 建立电流平衡电阻金属和焊盘之间的连接; 通过基于操作特性图构图电流平衡电阻金属来设计工作装置之间和之间的互连路径; 并除去临时聚合物层。

    High temperature circuit apparatus

    公开(公告)号:US06603145B2

    公开(公告)日:2003-08-05

    申请号:US10136626

    申请日:2002-05-02

    IPC分类号: H01L310312

    摘要: A method for interconnecting high-temperature silicon carbide (SiC) devices enables such high-temperature devices to be used in fabricating electronic circuits of significant scale. This method comprises empirically measuring operational characteristics of a plurality of the devices to be interconnected, the operational characteristics comprising devices which are measured to be non-working and devices which are measured to be working; characterizing the operational characteristics in an operational characteristics map; designing interconnection paths between and among the devices that are characterized to be working by the operational characteristics map; and excluding from the interconnection paths, devices that are characterized to be non-working by the operational characteristics map. A preferred embodiment of this method further includes disposing a temporary polymer layer over the devices; forming via holes through the temporary polymer layer, to bonding pads of the devices; applying a current-balancing resistive metal over the temporary polymer layer; establishing connections between the current-balancing resistive metal and the bonding pads; designing the interconnection paths between and among the working devices by patterning the current-balancing resistive metal based on the operational characteristics map; and removing the temporary polymer layer.

    Method for fabricating a thin film inductor
    8.
    发明授权
    Method for fabricating a thin film inductor 有权
    薄膜电感器的制造方法

    公开(公告)号:US6040226A

    公开(公告)日:2000-03-21

    申请号:US177908

    申请日:1998-10-23

    IPC分类号: H01L21/20

    CPC分类号: H01L21/20

    摘要: A method is provided for the manufacture of precision electronic components such as resistors, inductors, and capacitors on a polymer or ceramic surface. The electronic components can be deposited and trimmed to precise or matched values without having precise depositions of all of the pre-patterned materials. Thin film electronic components are deposited on a surface, parameter values are measured or estimated, a correction offset file is generated, and the components are trimmed using adaptive lithography to a very close tolerance. A computer program can be used to enable the adjustment of electronic components by techniques such as changing the physical length of an inductor coil or resistor lead, or by changing a capacitor plate area.

    摘要翻译: 提供了一种用于在聚合物或陶瓷表面上制造诸如电阻器,电感器和电容器的精密电子部件的方法。 电子部件可以沉积和修整成精确或匹配的值,而不会精确沉积所有预图案化材料。 薄膜电子部件沉积在表面上,测量或估计参数值,产生校正偏移文件,并且使用适应光刻将组件修剪到非常接近的公差。 可以使用计算机程序来实现电子部件的调整,例如改变电感线圈或电阻器引线的物理长度,或者改变电容器板面积。

    High voltage polymer processing methods and power feed-through bushing applications
    9.
    发明授权
    High voltage polymer processing methods and power feed-through bushing applications 失效
    高压聚合物加工方法和电源馈通套管应用

    公开(公告)号:US06302987B1

    公开(公告)日:2001-10-16

    申请号:US09286329

    申请日:1999-04-05

    IPC分类号: B29C6552

    CPC分类号: H02G5/005 Y10T29/49945

    摘要: A method for coupling electrically conductive bushings in a bus, including alternating layers of dielectric material and patterned, electrically conductive bus bars and having through holes therein with each through hole having a surface exposing a portion of a respective one of the bus bars, includes: applying a polymer mixture to the surface of each through hole; inserting the bushings in the respective through holes; and curing the polymer mixture by positioning the bus and bushings in a curing chamber, applying a vacuum to the curing chamber, and applying pressure to reduce voids in the polymer mixture and minimize further void formation.

    摘要翻译: 一种用于在总线中耦合导电衬套的方法,包括介电材料和图案化的导电母线的交替层,并且在其中具有通孔,每个通孔具有露出相应一个母线的一部分的表面的方法包括: 将聚合物混合物施加到每个通孔的表面; 将衬套插入相应的通孔中; 并通过将母线和套管定位在固化室中,对固化室施加真空并施加压力以减小聚合物混合物中的空隙并使进一步的空隙形成最小化来固化聚合物混合物。