摘要:
A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Requirements 1 to 3, Requirement 1: The A value determined by Formula (1) is 0.14 or more,
Requirement 2: The concentration of solid contents in the photosensitive composition for EUV light is 5.0% by mass or less, Requirement 3: The content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light.
摘要:
The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition that can provide a resist film with excellent sensitivity and a pattern with excellent LER performance, and can suppress pattern collapse during pattern formation. In addition, the present invention also provides a resist film, a pattern forming method, a mask blank with a resist film, a method for producing a photomask, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a resin X having a repeating unit A represented by General Formula (I), a repeating unit B having an acid-decomposable group, and a repeating unit C selected from a repeating unit c1 represented by General Formula (II) and the like; a compound Y which is a basic compound or ammonium salt compound whose basicity is reduced upon irradiation with actinic rays or radiation; and a photoacid generator Z which is a compound other than the compound Y.
摘要:
Provided is an actinic ray-sensitive or radiation-sensitive resin composition containing a resin and a compound that generates acid due to irradiation with an actinic ray or radiation. The resin includes a repeating unit (a) represented by Formula (I-1) and a repeating unit (b) having a group in which a protective group including a monocyclic ring leaves due to an action of an acid to generate a polar group. (In the formula, R11 and R12 each independently represent a hydrogen atom or an alkyl group. R13 represents a hydrogen atom or an alkyl group, or is a single bond or an alkylene group, and is bonded to L or Ar in the formula to form a ring. L represents a single bond or a divalent linking group. Ar represents an aromatic ring. n represents an integer of 2 or more.)
摘要:
An actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a repeating unit having a group in which a phenolic hydroxyl group is protected with an acid-leaving group; a first photoacid generator that generates an acid having a pKa of −2.00 to 2.00, in which in a case where the acid thus generated is a carboxylic acid, a pKa of the carboxylic acid is −2.00 or more and less than 1.00; and a second photoacid generator that generates a carboxylic acid having a pKa of 1.00 or more.
摘要:
A pattern forming method includes, in this order: a step (1) of forming a film on a substrate by using an actinic ray-sensitive or radiation-sensitive resin composition containing at least a resin having a group that is decomposed due to an action of an acid so as to generate a polar group; a step (2) of exposing the film; a step (3) of causing the exposed film to come into contact with a component that performs any one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction with a polar group generated in the exposed film without substantially dissolving the exposed film; and a step (4) of forming a pattern by developing the exposed film by using a developer including an organic solvent and removing an area of the film having a small exposure amount.
摘要:
Provided is an actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin including a repeating unit (a) represented by Formula (1); (B) a compound that generates an acid by irradiation with actinic rays or radiation; and (C) an organic solvent. A concentration of solid contents of the actinic ray-sensitive or radiation-sensitive resin composition is 4 mass % or less. (in the formula, R11 and R12 each independently represent a hydrogen atom, a halogen atom, or a monovalent organic group. R13 represents a hydrogen atom, a halogen atom, or a monovalent organic group or is a single bond or an alkylene group, and is bonded to L or Ar in the formula to form a ring. L represents a single bond or a divalent linking group. Ar represents an aromatic ring group. n represents an integer of 2 or more.)
摘要:
A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Conditions 1 and 2, Condition 1: The A value determined by Formula (1) is 0.14 or more, A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127) Formula (1): Condition 2: The concentration of the solid content in the photosensitive composition for EUV light is 2.5% by mass or less.
摘要:
The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition that can provide a resist film with excellent sensitivity and a pattern with excellent LER performance, and can suppress pattern collapse during pattern formation. In addition, the present invention also provides a resist film, a pattern forming method, a mask blank with a resist film, a method for producing a photomask, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a resin X having a repeating unit A represented by General Formula (I), a repeating unit B having an acid-decomposable group, and a repeating unit C selected from a repeating unit c1 represented by General Formula (II) and the like; a compound Y which is a basic compound or ammonium salt compound whose basicity is reduced upon irradiation with actinic rays or radiation; and a photoacid generator Z which is a compound other than the compound Y.
摘要:
There is provided a resist composition containing a resin. The resin includes a repeating unit (a) having one or more *—OY0 groups substituted for an aromatic ring; and a phenolic hydroxyl group (b) or a partial structure (c) represented by Formula (X). Here, the *—OY0 group is a group that is decomposed due to an action of an acid to generate a phenolic hydroxyl group, and Y0 is a specific protective group. In a case where the repeating unit (a) includes none of the phenolic hydroxyl group (b) and the partial structure (c), the repeating unit (a) is a repeating unit in which the *—OY0 group is decomposed due to an action of an acid to generate two or more phenolic hydroxyl groups.
摘要:
There is provided a pattern forming method comprising (i) a step of forming a film containing an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a compound represented by the specific formula, (B) a compound different from the compound (A) and capable of generating an acid upon irradiation with an actinic ray or radiation, and (P) a resin that does not react with the acid generated from the compound (A) and is capable of decreasing the solubility for an organic solvent-containing developer by the action of the acid generated from the compound (B), (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern; the actinic ray-sensitive or radiation-sensitive resin composition above; a resist film using the composition.