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    ETCH BIAS HOMOGENIZATION
    5.
    发明申请
    ETCH BIAS HOMOGENIZATION 有权
    ETCH BIAS均质化

    公开(公告)号：US20130292633A1

    公开(公告)日：2013-11-07

    申请号：US13463245

    申请日：2012-05-03

    申请人： Fabio Pellizzer ,  Hernan A. Castro ,  Eddie T. Flores

    发明人： Fabio Pellizzer ,  Hernan A. Castro ,  Eddie T. Flores

    IPC分类号： H01L45/00 ,  H01L21/82 ,  H01L21/8239

    CPC分类号： H01L45/1273 ,  H01L21/32134 ,  H01L21/76838 ,  H01L27/101 ,  H01L27/2427 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1675

    摘要： Methods and memory devices formed using etch bias homogenization are provided. One example method of forming a memory device using etch bias homogenization includes forming conductive material at respective levels over a substrate. Each respective level of conductive material is electrically coupled to corresponding circuitry on the substrate during patterning of the respective level of conductive material so that each respective level of conductive material has a homogenized etch bias during patterning thereof. Each respective level of conductive material electrically coupled to corresponding circuitry on the substrate is patterned.

    摘要翻译： 提供了使用蚀刻偏压均化形成的方法和存储器件。 使用蚀刻偏压均化形成存储器件的一个示例性方法包括在衬底上形成相应电平的导电材料。 在对相应级别的导电材料进行图案化期间，每个相应级别的导电材料电耦合到衬底上的对应电路，使得每个相应级别的导电材料在其图案化期间具有均质化的蚀刻偏压。 电耦合到衬底上的对应电路的每个相应级别的导电材料被图案化。

    Forming phase change memory cells
    7.
    发明授权
    Forming phase change memory cells 有权
    形成相变存储单元

    公开(公告)号：US08536013B2

    公开(公告)日：2013-09-17

    申请号：US13114966

    申请日：2011-05-24

    申请人： Yudong Kim ,  Fabio Pellizzer

    发明人： Yudong Kim ,  Fabio Pellizzer

    IPC分类号： H01L21/62

    CPC分类号： H01L45/06 ,  H01L27/2445 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1691

    摘要： Small phase change memory cells may be formed by forming a segmented heater over a substrate. A stop layer may be formed over the heater layer and segmented with the heater layer. Then, sidewall spacers may be formed over the segmented heater to define an aperture between the sidewall spacers that may act as a mask for etching the stop layer over the segmented heater. As a result of the etching using the sidewall spacers as a mask, sublithographic pore may be formed over the heater. Phase change material may be formed within the pore.

    摘要翻译： 可以通过在衬底上形成分段加热器来形成小相变存储器单元。 停止层可以形成在加热器层上并且与加热器层分段。 然后，侧壁间隔物可以形成在分段加热器上方，以在侧壁间隔物之间​​形成孔，其可用作蚀刻分段加热器上的停止层的掩模。 作为使用侧壁间隔物作为掩模的蚀刻的结果，可以在加热器上形成亚光刻孔。 相变材料可以在孔内形成。

    MEMORY CELLS AND MEMORY CELL FORMATION METHODS USING SEALING MATERIAL
    8.
    发明申请
    MEMORY CELLS AND MEMORY CELL FORMATION METHODS USING SEALING MATERIAL 有权

    公开(公告)号：US20130207068A1

    公开(公告)日：2013-08-15

    申请号：US13369654

    申请日：2012-02-09

    申请人： Fabio Pellizzer

    发明人： Fabio Pellizzer

    IPC分类号： H01L27/24 ,  H01L21/62

    CPC分类号： H01L45/16 ,  H01L27/2427 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/1675

    摘要： Memory cells, arrays of memory cells, and methods of forming the same with sealing material on sidewalls thereof are disclosed herein. One example of forming a memory cell includes forming a stack of materials, forming a trench to a first depth in the stack of materials such that a portion of at least one of the active storage element material and the active select device material is exposed on sidewalls of the trench. A sealing material is formed on the exposed portion of the at least one of the active storage element material and the active select device material and the trench is deepened such that a portion of the other of the at least one of the active storage element material and the active select device material is exposed on the sidewalls of the trench.

    Phase change memory with ovonic threshold switch
    9.
    发明授权
    Phase change memory with ovonic threshold switch 有权
    相位变化记忆体带有超声门限开关

    公开(公告)号：US08084789B2

    公开(公告)日：2011-12-27

    申请号：US12700440

    申请日：2010-02-04

    申请人： Fabio Pellizzer ,  Agostino Pirovano

    发明人： Fabio Pellizzer ,  Agostino Pirovano

    IPC分类号： H01L29/76

    CPC分类号： H01L45/06 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1675

    摘要： A phase change memory includes a memory element and a selection element. The memory element is embedded in a dielectric and includes a resistive element having at least one sublithographic dimension and a storage region in contact with the resistive element. The selection element includes a chalcogenic material embedded in a dielectric. The chalcogenic material and the storage region are part of a stack having a common etched edge.

    摘要翻译： 相变存储器包括存储元件和选择元件。 存储元件嵌入在电介质中，并且包括具有至少一个亚光刻尺寸的电阻元件和与电阻元件接触的存储区域。 选择元件包括埋在电介质中的硫属材料。 硫属材料和存储区域是具有共同蚀刻边缘的堆叠的一部分。