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    Optoelectronic Semiconductor Component and Method for the Production of an Optoelectronic Semiconductor Device
    1.
    发明申请
    Optoelectronic Semiconductor Component and Method for the Production of an Optoelectronic Semiconductor Device 审中-公开
    光电子半导体元件及其制造方法

    公开(公告)号：US20090257466A1

    公开(公告)日：2009-10-15

    申请号：US12420456

    申请日：2009-04-08

    申请人： Franz Eberhard ,  Berthold Hahn ,  Stephan Kaiser ,  Bernd Mayer

    发明人： Franz Eberhard ,  Berthold Hahn ,  Stephan Kaiser ,  Bernd Mayer

    IPC分类号： H01S5/028 ,  H01L21/00

    CPC分类号： H01L33/44 ,  H01L33/30 ,  H01S5/0281 ,  H01S5/0282 ,  H01S5/162 ,  H01S5/183 ,  H01S5/405

    摘要： In at least one embodiment, the optoelectronic semiconductor component includes an optically active area that is formed with a crystalline semiconductor material that contains at least one of the substances gallium or aluminum. Furthermore, the semiconductor component contains at least one facet on the optically active area. Furthermore, the semiconductor component contains at least one boundary layer, containing sulfur or selenium, with a thickness of up to five monolayers, wherein the boundary layer is located on the facet. Such a semiconductor component has a high destruction threshold relative to the optical powers that occur during operation of the semiconductor component.

    摘要翻译： 在至少一个实施例中，光电子半导体部件包括由含有至少一种物质镓或铝的晶体半导体材料形成的光学有源区域。 此外，半导体部件在光学活性区域上包含至少一个小面。 此外，半导体组件包含至少一个含有硫或硒的边界层，其厚度最多为五个单层，其中边界层位于小平面上。 这种半导体部件相对于在半导体部件的工作期间发生的光功率具有高的破坏阈值。

    Method for Production of a Radiation-Emitting Semiconductor Chip
    5.
    发明申请
    Method for Production of a Radiation-Emitting Semiconductor Chip 有权
    辐射发射半导体芯片的制造方法

    公开(公告)号：US20110140141A1

    公开(公告)日：2011-06-16

    申请号：US13027810

    申请日：2011-02-15

    申请人： Berthold HAHN ,  Stephan Kaiser ,  Volker Härle

    发明人： Berthold HAHN ,  Stephan Kaiser ,  Volker Härle

    IPC分类号： H01L33/60 ,  H01L33/40

    CPC分类号： H01L33/22 ,  H01L33/0079

    摘要： A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface.

    摘要翻译： 一种用于对薄膜发​​光二极管芯片的半导体层序列的辐射发射表面进行微图形化的方法，其中在衬底上生长半导体层序列，在半导体层序列上形成或施加镜面层， 在半导体层序列中在半导体层序列中产生的至少一部分辐射反射回半导体层序列并且朝向镜面层，半导体层序列与衬底分离，并且半导体层的分离表面 衬底分离的层序列被蚀刻剂蚀刻，蚀刻剂主要在晶体缺陷处蚀刻并选择性地蚀刻分离表面处的不同晶面。

    Method for production of a radiation-emitting semiconductor chip
    6.
    发明授权
    Method for production of a radiation-emitting semiconductor chip 有权
    辐射发射半导体芯片的制造方法

    公开(公告)号：US07897423B2

    公开(公告)日：2011-03-01

    申请号：US11579194

    申请日：2004-04-29

    申请人： Berthold Hahn ,  Stephan Kaiser ,  Volker Härle

    发明人： Berthold Hahn ,  Stephan Kaiser ,  Volker Härle

    IPC分类号： H01L21/00 ,  H01L21/46

    CPC分类号： H01L33/22 ,  H01L33/0079

    摘要： A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip. The semiconductor layer sequence is grown on a substrate. A mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer. The semiconductor layer sequence is separated from the substrate by means of a lift-off method, in which a separation zone in the semiconductor layer sequence is at least partly decomposed in such a way that anisotropic residues of a constituent of the separation zone, in particular a metallic constituent of the separation layer, remain at the separation surface of the semiconductor layer sequence, from which the substrate is separated. The separation surface—provided with the residues—of the semiconductor layer sequence with a dry etching method, a gaseous etchant or a wet-chemical etchant, wherein the anisotropic residues are at least temporarily used as an etching mask. A semiconductor chip is produced according to such a method.

    摘要翻译： 一种用于对薄膜发​​光二极管芯片的半导体层序列的辐射发射表面进行微图形化的方法。 半导体层序列在衬底上生长。 在半导体层序列上形成或施加镜层，其反射回到半导体层序列中，半导体层序列在其操作期间在半导体层序列中产生的辐射的至少一部分并且被指向镜层。 通过剥离方法将半导体层序列与衬底分离，其中半导体层序列中的分离区域至少部分地被分解，使得分离区的成分的各向异性残留物 分离层的金属成分保留在半导体层序列的分离表面，基板从该分离表面分离。 具有干蚀刻方法的半导体层序列的残留物的分离表面，气体蚀刻剂或湿化学蚀刻剂，其中各向异性残余物至少暂时用作蚀刻掩模。 根据这种方法制造半导体芯片。

    Electromagnetic radiation emitting semiconductor chip and procedure for its production
    7.
    发明授权
    Electromagnetic radiation emitting semiconductor chip and procedure for its production 有权
    电磁辐射发射半导体芯片及其生产程序

    公开(公告)号：US07442966B2

    公开(公告)日：2008-10-28

    申请号：US11585632

    申请日：2006-10-24

    申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

    发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/46

    摘要： A semiconductor chip which emits electromagnetic radiation is presented. The chip includes an epitaxially produced semiconductor layer stack based on nitride semiconductor material, which includes an n-conducting semiconductor layer, a p-conducting semiconductor layer, and an electromagnetic radiation generating region, which is arranged between these two semiconductor layers. The chip further includes a base on which the semiconductor layer stack is arranged, and a mirror layer, which is arranged between the semiconductor layer stack and the base. The n-conducting semiconductor layer faces away from the base, and the n-conducting semiconductor layer or an outcoupling layer located on the n-conducting semiconductor layer has a radiation-outcoupling surface which, in turn, includes planar outcoupling sub-surfaces, which are positioned obliquely with respect to a main plane of the radiation-generating region and each form an angle of between 15° and 70° with this plane.

    摘要翻译： 提出了发射电磁辐射的半导体芯片。 芯片包括基于氮化物半导体材料的外延生产的半导体层堆叠，其包括n导电半导体层，p导电半导体层和电磁辐射产生区域，其布置在这两个半导体层之间。 芯片还包括布置有半导体层堆叠的基底和布置在半导体层堆叠和基底之间的镜面层。 n导电半导体层背离基底，并且位于n导电半导体层上的n导电半导体层或输出耦合层具有辐射耦合表面，辐射输出耦合表面又包括平面输出耦合子表面，其中 相对于辐射产生区域的主平面倾斜地定位，并且每个与该平面形成15°至70°的角度。

    Electromagnetic radiation emitting semiconductor chip and procedure for its production
    8.
    发明授权
    Electromagnetic radiation emitting semiconductor chip and procedure for its production 有权
    电磁辐射发射半导体芯片及其生产程序

    公开(公告)号：US07129528B2

    公开(公告)日：2006-10-31

    申请号：US10671854

    申请日：2003-09-25

    申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

    发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/46

    摘要： Semiconductor chip which emits electromagnetic radiation, and method for fabricating it. To improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface (131) is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack (1) based on GaN, which comprises an n-conducting semiconductor layer (11), a p-conducting semiconductor layer (13) and an electromagnetic radiation generating region (12) which is arranged between these two semiconductor layers (11, 13). The surface of the p-conducting semiconductor layer (13) which faces away from the radiation-generating region (12) is provided with three-dimensional pyramid-like structures (15). A mirror layer (40) is arranged over the whole of this textured surface. A textured reflection surface (131) is formed between the mirror layer (40) and the p-conducting semiconductor layer (13). The textured reflection surface (131) can increase the amount of light which is decoupled at the radiation-outcoupling surface (111) by virtue of the fact that a beam (3), after double reflection on the reflection surface (131), is more likely not to be totally reflected.

    摘要翻译： 发射电磁辐射的半导体芯片及其制造方法。 为了提高发射电磁辐射的半导体芯片的光输出，在半导体芯片的p侧上集成纹理化反射面（131）。 半导体芯片具有基于GaN的外延生产的半导体层堆叠（1），其包括n导电半导体层（11），p导电半导体层（13）和电磁辐射产生区域（12），其布置 在这两个半导体层（11,13）之间。 背离辐射产生区域（12）的p导电半导体层（13）的表面设置有三维金字塔状结构（15）。 镜面层（40）布置在整个这个纹理表面上。 在镜面层（40）和导电性半导体层（13）之间形成纹理反射面（131）。 纹理反射表面（131）可以通过在反射表面（131）上双重反射之后的光束（3）更多地增加在辐射输出耦合表面（111）处解耦的光量 可能不会被完全反映。

    Method for fabricating semiconductor layers
    10.
    发明授权
    Method for fabricating semiconductor layers 有权
    制造半导体层的方法

    公开(公告)号：US06770542B2

    公开(公告)日：2004-08-03

    申请号：US10324428

    申请日：2002-12-20

    申请人： Andreas Plössl ,  Berthold Hahn ,  Dominik Eisert ,  Stephan Kaiser

    发明人： Andreas Plössl ,  Berthold Hahn ,  Dominik Eisert ,  Stephan Kaiser

    IPC分类号： H01L2130

    CPC分类号： H01L21/2007

    摘要： A method is provided for fabricating a useful layer containing at least one semiconductor layer, in which the useful layer is separated from a carrier. In this case, the useful layer is applied to the carrier and an auxiliary carrier is applied to that side of the useful layer that is remote from the carrier by a connecting layer at a joining temperature. Afterward, the carrier is stripped away at a temperature that is greater than or equal to the joining temperature and is less than the melting point of the connecting layer. At least a part of the useful layer together with the auxiliary carrier is removed from the carrier.

    摘要翻译： 提供了一种用于制造含有至少一个半导体层的有用层的方法，其中有用层与载体分离。 在这种情况下，将有用层施加到载体上，并且在接合温度下通过连接层将辅助载体施加到远离载体的有用层的该侧。 之后，载体在大于或等于接合温度的温度下剥离，并且小于连接层的熔点。 将有用层的至少一部分与辅助载体一起从载体上除去。